DE69706489T2 - Nichtflüchtige Halbleiterspeicheranordnung mit variabler Source-Spannung - Google Patents

Nichtflüchtige Halbleiterspeicheranordnung mit variabler Source-Spannung

Info

Publication number
DE69706489T2
DE69706489T2 DE69706489T DE69706489T DE69706489T2 DE 69706489 T2 DE69706489 T2 DE 69706489T2 DE 69706489 T DE69706489 T DE 69706489T DE 69706489 T DE69706489 T DE 69706489T DE 69706489 T2 DE69706489 T2 DE 69706489T2
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
source voltage
volatile semiconductor
variable source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69706489T
Other languages
English (en)
Other versions
DE69706489D1 (de
Inventor
Masayoshi Hirata
Takahiko Urai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69706489D1 publication Critical patent/DE69706489D1/de
Application granted granted Critical
Publication of DE69706489T2 publication Critical patent/DE69706489T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3427—Circuits or methods to prevent or reduce disturbance of the state of a memory cell when neighbouring cells are read or written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
DE69706489T 1996-07-30 1997-07-08 Nichtflüchtige Halbleiterspeicheranordnung mit variabler Source-Spannung Expired - Fee Related DE69706489T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20073096A JP2917924B2 (ja) 1996-07-30 1996-07-30 不揮発性半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69706489D1 DE69706489D1 (de) 2001-10-11
DE69706489T2 true DE69706489T2 (de) 2002-04-25

Family

ID=16429236

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69706489T Expired - Fee Related DE69706489T2 (de) 1996-07-30 1997-07-08 Nichtflüchtige Halbleiterspeicheranordnung mit variabler Source-Spannung

Country Status (6)

Country Link
US (1) US5892715A (de)
EP (1) EP0822557B1 (de)
JP (1) JP2917924B2 (de)
KR (1) KR100255896B1 (de)
DE (1) DE69706489T2 (de)
TW (1) TW328130B (de)

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JP3447939B2 (ja) * 1997-12-10 2003-09-16 株式会社東芝 不揮発性半導体メモリ及びデータ読み出し方法
US6314026B1 (en) * 1999-02-08 2001-11-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor device using local self boost technique
IT1313873B1 (it) * 1999-11-12 2002-09-24 St Microelectronics Srl Architettura per la gestione delle tensioni interne in una memoria nonvolatile, in particolare di tipo flash dual-work a singola tensione di
US6662263B1 (en) 2000-03-03 2003-12-09 Multi Level Memory Technology Sectorless flash memory architecture
US6614692B2 (en) * 2001-01-18 2003-09-02 Saifun Semiconductors Ltd. EEPROM array and method for operation thereof
US6917544B2 (en) 2002-07-10 2005-07-12 Saifun Semiconductors Ltd. Multiple use memory chip
KR100864442B1 (ko) * 2002-07-11 2008-10-20 주식회사 포스코 고로의 출선구 보호벽 보호장치
KR100550789B1 (ko) * 2002-07-18 2006-02-08 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램/소거 전압 공급 회로
US6707699B1 (en) * 2002-09-24 2004-03-16 Infineon Technologies Aktiengesellschaft Historical information storage for integrated circuits
US7136304B2 (en) 2002-10-29 2006-11-14 Saifun Semiconductor Ltd Method, system and circuit for programming a non-volatile memory array
US7178004B2 (en) 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
TWI220031B (en) * 2003-07-01 2004-08-01 Delta Electronics Inc Method and apparatus for time-relevant accessing a non-volatile memory in an electrical equipment
US7638850B2 (en) 2004-10-14 2009-12-29 Saifun Semiconductors Ltd. Non-volatile memory structure and method of fabrication
US8053812B2 (en) 2005-03-17 2011-11-08 Spansion Israel Ltd Contact in planar NROM technology
DE602005010403D1 (de) * 2005-05-25 2008-11-27 St Microelectronics Srl Entladeschaltung für einen wortweise löschbaren Flash-Speicher
JP2007027760A (ja) 2005-07-18 2007-02-01 Saifun Semiconductors Ltd 高密度不揮発性メモリアレイ及び製造方法
US7668017B2 (en) 2005-08-17 2010-02-23 Saifun Semiconductors Ltd. Method of erasing non-volatile memory cells
US7808818B2 (en) 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7692961B2 (en) 2006-02-21 2010-04-06 Saifun Semiconductors Ltd. Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
US7760554B2 (en) 2006-02-21 2010-07-20 Saifun Semiconductors Ltd. NROM non-volatile memory and mode of operation
US7701779B2 (en) 2006-04-27 2010-04-20 Sajfun Semiconductors Ltd. Method for programming a reference cell
JP5019198B2 (ja) * 2006-06-29 2012-09-05 株式会社東芝 半導体記憶装置
US20080092015A1 (en) * 2006-09-28 2008-04-17 Yigal Brandman Nonvolatile memory with adaptive operation
US7782673B2 (en) * 2007-12-13 2010-08-24 Kabushiki Kaisha Toshiba Semiconductor memory device which includes memory cell having charge accumulation layer and control gate
US9009547B2 (en) 2011-01-27 2015-04-14 Apple Inc. Advanced programming verification schemes for analog memory cells
US9293194B2 (en) 2011-01-27 2016-03-22 Apple Inc. Programming and erasure schemes for analog memory cells
JP6102146B2 (ja) * 2012-09-25 2017-03-29 株式会社ソシオネクスト 半導体記憶装置
CN111381969B (zh) * 2020-03-16 2021-10-26 北京康吉森技术有限公司 一种分布式软件的管理方法及其系统

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
WO1992005560A1 (en) * 1990-09-25 1992-04-02 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory
US5504760A (en) * 1991-03-15 1996-04-02 Sandisk Corporation Mixed data encoding EEPROM system
US5396468A (en) * 1991-03-15 1995-03-07 Sundisk Corporation Streamlined write operation for EEPROM system
US5270979A (en) * 1991-03-15 1993-12-14 Sundisk Corporation Method for optimum erasing of EEPROM
US5295113A (en) * 1991-05-09 1994-03-15 Intel Corporation Flash memory source inhibit generator

Also Published As

Publication number Publication date
EP0822557B1 (de) 2001-09-05
EP0822557A3 (de) 2000-04-26
EP0822557A2 (de) 1998-02-04
DE69706489D1 (de) 2001-10-11
JPH1050083A (ja) 1998-02-20
KR980011505A (ko) 1998-04-30
TW328130B (en) 1998-03-11
US5892715A (en) 1999-04-06
KR100255896B1 (ko) 2000-05-01
JP2917924B2 (ja) 1999-07-12

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee