DE69707635T2 - Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit - Google Patents

Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit

Info

Publication number
DE69707635T2
DE69707635T2 DE69707635T DE69707635T DE69707635T2 DE 69707635 T2 DE69707635 T2 DE 69707635T2 DE 69707635 T DE69707635 T DE 69707635T DE 69707635 T DE69707635 T DE 69707635T DE 69707635 T2 DE69707635 T2 DE 69707635T2
Authority
DE
Germany
Prior art keywords
making
resist pattern
layer composition
reflective sub
pattern therewith
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69707635T
Other languages
English (en)
Other versions
DE69707635D1 (de
Inventor
Kazuyoshi Mizutani
Makoto Momota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34373896A external-priority patent/JP3632875B2/ja
Priority claimed from JP04600197A external-priority patent/JP3851402B2/ja
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of DE69707635D1 publication Critical patent/DE69707635D1/de
Publication of DE69707635T2 publication Critical patent/DE69707635T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3281—Heterocyclic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69707635T 1996-12-24 1997-12-23 Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit Expired - Lifetime DE69707635T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP34373896A JP3632875B2 (ja) 1996-12-24 1996-12-24 反射防止膜材料用組成物
JP04600197A JP3851402B2 (ja) 1997-02-28 1997-02-28 反射防止膜材料組成物及びそれを利用したレジストパターン形成方法

Publications (2)

Publication Number Publication Date
DE69707635D1 DE69707635D1 (de) 2001-11-29
DE69707635T2 true DE69707635T2 (de) 2002-08-08

Family

ID=26386103

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707635T Expired - Lifetime DE69707635T2 (de) 1996-12-24 1997-12-23 Zusammensetzung für Antireflexunterschichten und Verfahren zur Herstellung eines Resistmusters damit

Country Status (4)

Country Link
US (1) US6165684A (de)
EP (1) EP0851300B1 (de)
KR (1) KR100522798B1 (de)
DE (1) DE69707635T2 (de)

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JP3852889B2 (ja) * 1998-09-24 2006-12-06 富士写真フイルム株式会社 フォトレジスト用反射防止膜材料組成物
US6268457B1 (en) 1999-06-10 2001-07-31 Allied Signal, Inc. Spin-on glass anti-reflective coatings for photolithography
KR100804873B1 (ko) 1999-06-10 2008-02-20 얼라이드시그날 인코퍼레이티드 포토리소그래피용 ｓｏｇ 반사방지 코팅
JP4007569B2 (ja) * 1999-09-06 2007-11-14 富士フイルム株式会社 ポジ型電子線又はｘ線レジスト組成物
KR100604802B1 (ko) * 2000-03-07 2006-07-26 삼성전자주식회사 백본에 나프탈렌 유도체가 도입된 감광성 폴리머와 이를포함하는 레지스트 조성물
US6479879B1 (en) * 2000-11-16 2002-11-12 Advanced Micro Devices, Inc. Low defect organic BARC coating in a semiconductor structure
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KR101019331B1 (ko) 2001-04-17 2011-03-07 브레우어 사이언스 인코포레이션 개선된 스핀 보울 상화성을 갖는 반사 방지 코팅 조성물
US6893684B2 (en) 2001-06-05 2005-05-17 Brewer Science Inc. Anti-reflective coating compositions for use with low k dielectric materials
US6670425B2 (en) * 2001-06-05 2003-12-30 Brewer Science, Inc. Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings
JP3445584B2 (ja) * 2001-08-10 2003-09-08 沖電気工業株式会社 反射防止膜のエッチング方法
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KR100478982B1 (ko) * 2002-05-02 2005-03-25 금호석유화학 주식회사 신규 산발생제 및 이를 함유한 박막 조성물
US7217491B2 (en) * 2002-06-07 2007-05-15 Battelle Memorial Institute Antireflective coatings
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
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KR100570208B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570209B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100570207B1 (ko) * 2003-10-15 2006-04-12 주식회사 하이닉스반도체 유기 반사방지막용 광 흡수제 중합체 및 이의 제조 방법과상기 중합체를 포함하는 유기 반사 방지막 조성물
KR100611391B1 (ko) * 2003-11-06 2006-08-11 주식회사 하이닉스반도체 유기 난반사 방지막 조성물 및 이를 이용한 패턴 형성 방법
US8053159B2 (en) 2003-11-18 2011-11-08 Honeywell International Inc. Antireflective coatings for via fill and photolithography applications and methods of preparation thereof
US7534555B2 (en) * 2003-12-10 2009-05-19 Hitachi Global Storage Technologies Netherlands B.V. Plating using copolymer
JP2005236062A (ja) * 2004-02-20 2005-09-02 Nec Electronics Corp 不揮発性半導体記憶装置の製造方法
KR100574490B1 (ko) * 2004-04-27 2006-04-27 주식회사 하이닉스반도체 상부 반사방지막 중합체, 이의 제조방법 및 이를 함유하는상부 반사방지막 조성물
KR101216403B1 (ko) 2004-07-02 2012-12-28 닛산 가가쿠 고교 가부시키 가이샤 할로겐 원자를 갖는 나프탈렌환을 포함하는 리소그라피용 하층막 형성 조성물
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JP4753046B2 (ja) * 2005-01-21 2011-08-17 日産化学工業株式会社 保護されたカルボキシル基を有する化合物を含むリソグラフィー用下層膜形成組成物
US7785768B2 (en) * 2005-06-07 2010-08-31 Tokyo Ohka Kogyo Co. Ltd. Thermoacid generator for antireflection film formation, composition for antireflection film formation, and antireflection film made therefrom
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US8642246B2 (en) 2007-02-26 2014-02-04 Honeywell International Inc. Compositions, coatings and films for tri-layer patterning applications and methods of preparation thereof
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Also Published As

Publication number Publication date
KR100522798B1 (ko) 2006-01-12
EP0851300B1 (de) 2001-10-24
DE69707635D1 (de) 2001-11-29
KR19980064630A (ko) 1998-10-07
EP0851300A1 (de) 1998-07-01
US6165684A (en) 2000-12-26

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Owner name: FUJIFILM CORP., TOKIO/TOKYO, JP