DE69708996T2 - Verfahren zur Reduzierung der Kontaminierungspartikel in Plasmakammern - Google Patents

Verfahren zur Reduzierung der Kontaminierungspartikel in Plasmakammern

Info

Publication number
DE69708996T2
DE69708996T2 DE69708996T DE69708996T DE69708996T2 DE 69708996 T2 DE69708996 T2 DE 69708996T2 DE 69708996 T DE69708996 T DE 69708996T DE 69708996 T DE69708996 T DE 69708996T DE 69708996 T2 DE69708996 T2 DE 69708996T2
Authority
DE
Germany
Prior art keywords
plasma chambers
reducing contamination
contamination particles
particles
reducing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69708996T
Other languages
English (en)
Other versions
DE69708996D1 (de
Inventor
Murugesh Laxman
Sahin Turgut
Narwankar Pravin
Rossmann Kent
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69708996D1 publication Critical patent/DE69708996D1/de
Application granted granted Critical
Publication of DE69708996T2 publication Critical patent/DE69708996T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
DE69708996T 1996-08-19 1997-07-23 Verfahren zur Reduzierung der Kontaminierungspartikel in Plasmakammern Expired - Fee Related DE69708996T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/704,428 US5811356A (en) 1996-08-19 1996-08-19 Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning

Publications (2)

Publication Number Publication Date
DE69708996D1 DE69708996D1 (de) 2002-01-24
DE69708996T2 true DE69708996T2 (de) 2003-01-02

Family

ID=24829436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69708996T Expired - Fee Related DE69708996T2 (de) 1996-08-19 1997-07-23 Verfahren zur Reduzierung der Kontaminierungspartikel in Plasmakammern

Country Status (6)

Country Link
US (1) US5811356A (de)
EP (1) EP0825278B1 (de)
JP (1) JP3969795B2 (de)
KR (1) KR100268519B1 (de)
DE (1) DE69708996T2 (de)
TW (1) TW398028B (de)

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JP2737720B2 (ja) * 1995-10-12 1998-04-08 日本電気株式会社 薄膜形成方法及び装置
US6347636B1 (en) * 1996-11-13 2002-02-19 Applied Materials, Inc. Methods and apparatus for gettering fluorine from chamber material surfaces
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US20030143410A1 (en) * 1997-03-24 2003-07-31 Applied Materials, Inc. Method for reduction of contaminants in amorphous-silicon film
TW422892B (en) * 1997-03-27 2001-02-21 Applied Materials Inc Technique for improving chucking reproducibility
JP3676912B2 (ja) * 1997-08-07 2005-07-27 株式会社ルネサステクノロジ 半導体製造装置およびその異物除去方法
US6267121B1 (en) * 1999-02-11 2001-07-31 Taiwan Semiconductor Manufacturing Company Process to season and determine condition of a high density plasma etcher
US6180540B1 (en) 1999-02-18 2001-01-30 Taiwan Semiconductor Manufacturing Company Method for forming a stabilized fluorosilicate glass layer
US6124927A (en) * 1999-05-19 2000-09-26 Chartered Semiconductor Manufacturing Ltd. Method to protect chamber wall from etching by endpoint plasma clean
KR100355862B1 (ko) * 1999-06-08 2002-10-09 아남반도체 주식회사 플라즈마 화학기상증착 챔버의 세정방법
US6372634B1 (en) 1999-06-15 2002-04-16 Cypress Semiconductor Corp. Plasma etch chemistry and method of improving etch control
US6322716B1 (en) 1999-08-30 2001-11-27 Cypress Semiconductor Corp. Method for conditioning a plasma etch chamber
US6274500B1 (en) 1999-10-12 2001-08-14 Chartered Semiconductor Manufacturing Ltd. Single wafer in-situ dry clean and seasoning for plasma etching process
US6790374B1 (en) 1999-11-18 2004-09-14 Chartered Semiconductor Manufacturing Ltd. Plasma etch method for forming plasma etched silicon layer
US6383931B1 (en) * 2000-02-11 2002-05-07 Lam Research Corporation Convertible hot edge ring to improve low-K dielectric etch
US6564810B1 (en) 2000-03-28 2003-05-20 Asm America Cleaning of semiconductor processing chambers
US6479098B1 (en) 2000-12-26 2002-11-12 Taiwan Semiconductor Manufacturing Company Method to solve particle performance of FSG layer by using UFU season film for FSG process
US6584987B1 (en) 2001-03-16 2003-07-01 Taiwan Semiconductor Manufacturing Company Method for improved cleaning in HDP-CVD process with reduced NF3 usage
US20030013314A1 (en) * 2001-07-06 2003-01-16 Chentsau Ying Method of reducing particulates in a plasma etch chamber during a metal etch process
KR100825130B1 (ko) 2001-07-06 2008-04-24 어플라이드 머티어리얼스, 인코포레이티드 금속 에칭 공정 동안 플라즈마 에칭 챔버내에서 파티클을감소시키는 방법
US6667248B2 (en) * 2001-09-05 2003-12-23 Applied Materials Inc. Low-bias-deposited high-density-plasma chemical-vapor-deposition silicate glass layers
US20030220708A1 (en) * 2001-11-28 2003-11-27 Applied Materials, Inc. Integrated equipment set for forming shallow trench isolation regions
US6815007B1 (en) 2002-03-04 2004-11-09 Taiwan Semiconductor Manufacturing Company Method to solve IMD-FSG particle and increase Cp yield by using a new tougher UFUN season film
US7204913B1 (en) * 2002-06-28 2007-04-17 Lam Research Corporation In-situ pre-coating of plasma etch chamber for improved productivity and chamber condition control
KR20040039609A (ko) * 2002-11-04 2004-05-12 주식회사 엘리아테크 증착 챔버의 오염 방지 시스템 및 그 방법
US6716765B1 (en) * 2002-11-12 2004-04-06 Novellus Systems, Inc. Plasma clean for a semiconductor thin film deposition chamber
US7723228B2 (en) * 2003-05-20 2010-05-25 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US7371427B2 (en) * 2003-05-20 2008-05-13 Applied Materials, Inc. Reduction of hillocks prior to dielectric barrier deposition in Cu damascene
US7288284B2 (en) * 2004-03-26 2007-10-30 Taiwan Semiconductor Manufacturing Co., Ltd. Post-cleaning chamber seasoning method
US7115508B2 (en) * 2004-04-02 2006-10-03 Applied-Materials, Inc. Oxide-like seasoning for dielectric low k films
JP6077810B2 (ja) * 2012-09-28 2017-02-08 東京応化工業株式会社 プラズマ処理装置、プラズマ処理方法および積層体の製造方法
JP6101031B2 (ja) * 2012-09-28 2017-03-22 東京応化工業株式会社 プラズマ処理装置および積層体の製造方法
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
US9828672B2 (en) 2015-03-26 2017-11-28 Lam Research Corporation Minimizing radical recombination using ALD silicon oxide surface coating with intermittent restoration plasma
US10023956B2 (en) * 2015-04-09 2018-07-17 Lam Research Corporation Eliminating first wafer metal contamination effect in high density plasma chemical vapor deposition systems
US20160322198A1 (en) * 2015-04-30 2016-11-03 Infineon Technologies Ag Ion Source for Metal Implantation and Methods Thereof
CN111448640A (zh) 2017-12-07 2020-07-24 朗姆研究公司 在室调节中的抗氧化保护层
US10975470B2 (en) * 2018-02-23 2021-04-13 Asm Ip Holding B.V. Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment
WO2020264054A1 (en) * 2019-06-26 2020-12-30 Lam Research Corporation Chamber-accumulation extension via in-situ passivation
CN116246983B (zh) * 2023-03-08 2023-11-24 上海赛美特软件科技股份有限公司 一种暖机片分配方法及装置

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US4795880A (en) * 1986-09-11 1989-01-03 Hayes James A Low pressure chemical vapor deposition furnace plasma clean apparatus
JP2708533B2 (ja) * 1989-03-14 1998-02-04 富士通株式会社 Ｃｖｄ装置の残留ガス除去方法
ATE251798T1 (de) * 1994-04-28 2003-10-15 Applied Materials Inc Verfahren zum betreiben eines cvd-reaktors hoher plasma-dichte mit kombinierter induktiver und kapazitiver einkopplung
US5514246A (en) * 1994-06-02 1996-05-07 Micron Technology, Inc. Plasma reactors and method of cleaning a plasma reactor
US5523261A (en) * 1995-02-28 1996-06-04 Micron Technology, Inc. Method of cleaning high density inductively coupled plasma chamber using capacitive coupling
US5589041A (en) * 1995-06-07 1996-12-31 Sony Corporation Plasma sputter etching system with reduced particle contamination

Also Published As

Publication number Publication date
JPH1088360A (ja) 1998-04-07
DE69708996D1 (de) 2002-01-24
EP0825278B1 (de) 2001-12-12
US5811356A (en) 1998-09-22
TW398028B (en) 2000-07-11
KR19980018744A (ko) 1998-06-05
EP0825278A1 (de) 1998-02-25
JP3969795B2 (ja) 2007-09-05
KR100268519B1 (ko) 2001-05-02

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication related to discontinuation of the patent is to be deleted
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KIRSCHNER, K., DIPL.-PHYS., PAT.-ANW., 81479 MUENCHEN

8328 Change in the person/name/address of the agent

Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING

8339 Ceased/non-payment of the annual fee