DE69712955D1 - Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten - Google Patents

Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten

Info

Publication number
DE69712955D1
DE69712955D1 DE69712955T DE69712955T DE69712955D1 DE 69712955 D1 DE69712955 D1 DE 69712955D1 DE 69712955 T DE69712955 T DE 69712955T DE 69712955 T DE69712955 T DE 69712955T DE 69712955 D1 DE69712955 D1 DE 69712955D1
Authority
DE
Germany
Prior art keywords
silicon single
detecting
single crystal
substrates
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69712955T
Other languages
English (en)
Other versions
DE69712955T2 (de
Inventor
Masaki Majima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Application granted granted Critical
Publication of DE69712955D1 publication Critical patent/DE69712955D1/de
Publication of DE69712955T2 publication Critical patent/DE69712955T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/32—Polishing; Etching
DE69712955T 1996-03-22 1997-03-18 Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten Expired - Lifetime DE69712955T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP09361896A JP3417515B2 (ja) 1996-03-22 1996-03-22 シリコン単結晶基板の結晶欠陥評価方法

Publications (2)

Publication Number Publication Date
DE69712955D1 true DE69712955D1 (de) 2002-07-11
DE69712955T2 DE69712955T2 (de) 2003-01-23

Family

ID=14087318

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69712955T Expired - Lifetime DE69712955T2 (de) 1996-03-22 1997-03-18 Verfahren zum Detektieren von Kristalldefekten in Silizium-Einkristallsubstraten

Country Status (4)

Country Link
US (1) US5766976A (de)
EP (1) EP0796933B1 (de)
JP (1) JP3417515B2 (de)
DE (1) DE69712955T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1253610C (zh) 1997-04-09 2006-04-26 Memc电子材料有限公司 低缺陷密度、自间隙原子受控制的硅
US6600557B1 (en) * 1999-05-21 2003-07-29 Memc Electronic Materials, Inc. Method for the detection of processing-induced defects in a silicon wafer
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
WO2001048810A1 (fr) * 1999-12-24 2001-07-05 Shin-Etsu Handotai Co., Ltd. Dispositif d'inspection des defauts de cristal d'une plaquette de silicium et procede de detection des defauts de cristal de cette plaquette
JP2008153538A (ja) * 2006-12-19 2008-07-03 Siltronic Ag シリコンウエハ表面損傷評価方法
KR100901823B1 (ko) * 2007-08-17 2009-06-09 주식회사 실트론 실리콘 웨이퍼 결함 분석 방법
CN102023111B (zh) * 2010-11-02 2012-05-16 大连理工大学 一种软脆光电晶体透射电镜样品制备方法
RU2534434C2 (ru) * 2013-01-09 2014-11-27 Федеральное Государственное Бюджетное Образовательное Учреждение Высшего Профессионального Образования "Дагестанский Государственный Технический Университет" (Дгту) Способ выявления дефектов на полупроводниковой пластине
CN103698339B (zh) * 2013-12-29 2015-12-09 云南北方驰宏光电有限公司 一种晶体位错腐蚀检测方法
CN105300999B (zh) * 2015-10-19 2018-03-06 中国电子科技集团公司第四十六研究所 一种mems用硅单晶的缺陷检验方法
US10504737B2 (en) 2017-05-30 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of enhancing surface topography on a substrate for inspection
JP6972187B2 (ja) 2017-08-09 2021-11-24 シャークニンジャ オペレーティング エルエルシー 調理装置およびその構成要素
KR102255421B1 (ko) * 2020-08-11 2021-05-24 충남대학교산학협력단 단결정 산화갈륨의 결함 평가방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63215041A (ja) * 1987-03-04 1988-09-07 Toshiba Corp 結晶欠陥評価用エツチング液
JPH08760B2 (ja) * 1991-03-14 1996-01-10 信越半導体株式会社 シリコンウェーハの品質検査方法
US5223443A (en) * 1992-02-19 1993-06-29 Integrated Device Technology, Inc. Method for determining wafer cleanliness
JP2936916B2 (ja) * 1992-09-10 1999-08-23 信越半導体株式会社 シリコン単結晶の品質評価方法
US5382551A (en) * 1993-04-09 1995-01-17 Micron Semiconductor, Inc. Method for reducing the effects of semiconductor substrate deformities

Also Published As

Publication number Publication date
JPH09260449A (ja) 1997-10-03
EP0796933A2 (de) 1997-09-24
US5766976A (en) 1998-06-16
EP0796933B1 (de) 2002-06-05
DE69712955T2 (de) 2003-01-23
EP0796933A3 (de) 1998-08-05
JP3417515B2 (ja) 2003-06-16

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