DE69713080T2 - Apparatur zur gleichmässigen verteilung von plasma - Google Patents
Apparatur zur gleichmässigen verteilung von plasmaInfo
- Publication number
- DE69713080T2 DE69713080T2 DE69713080T DE69713080T DE69713080T2 DE 69713080 T2 DE69713080 T2 DE 69713080T2 DE 69713080 T DE69713080 T DE 69713080T DE 69713080 T DE69713080 T DE 69713080T DE 69713080 T2 DE69713080 T2 DE 69713080T2
- Authority
- DE
- Germany
- Prior art keywords
- plasma
- even distribution
- distribution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3342—Resist stripping
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/623,867 US5614026A (en) | 1996-03-29 | 1996-03-29 | Showerhead for uniform distribution of process gas |
PCT/US1997/004933 WO1997037059A1 (en) | 1996-03-29 | 1997-03-27 | Showerhead for uniform distribution of process gas |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69713080D1 DE69713080D1 (de) | 2002-07-11 |
DE69713080T2 true DE69713080T2 (de) | 2003-01-16 |
Family
ID=24499711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69713080T Expired - Lifetime DE69713080T2 (de) | 1996-03-29 | 1997-03-27 | Apparatur zur gleichmässigen verteilung von plasma |
Country Status (5)
Country | Link |
---|---|
US (1) | US5614026A (de) |
EP (1) | EP0889976B1 (de) |
JP (1) | JP4118954B2 (de) |
DE (1) | DE69713080T2 (de) |
WO (1) | WO1997037059A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038967A1 (en) | 2005-10-05 | 2007-04-12 | Pva Tepla Ag | Down-stream plasma etching with deflectable plasma beam |
Families Citing this family (97)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6159297A (en) | 1996-04-25 | 2000-12-12 | Applied Materials, Inc. | Semiconductor process chamber and processing method |
WO1998058731A2 (en) * | 1997-06-20 | 1998-12-30 | Flowgenix Corporation | Apparatus for exposing substrates to gas-phase radicals |
DE19727857C1 (de) * | 1997-06-30 | 1999-04-29 | Fraunhofer Ges Forschung | Plasmarektor mit Prallströmung zur Oberflächenbehandlung |
US6079356A (en) * | 1997-12-02 | 2000-06-27 | Applied Materials, Inc. | Reactor optimized for chemical vapor deposition of titanium |
US6399445B1 (en) * | 1997-12-18 | 2002-06-04 | Texas Instruments Incorporated | Fabrication technique for controlled incorporation of nitrogen in gate dielectric |
US6482747B1 (en) * | 1997-12-26 | 2002-11-19 | Hitachi, Ltd. | Plasma treatment method and plasma treatment apparatus |
US6301270B1 (en) | 1998-03-02 | 2001-10-09 | Compaq Computer Corporation | Right to left matching of device address numbers with provided integrated services digital network destination numbers |
US6203657B1 (en) | 1998-03-31 | 2001-03-20 | Lam Research Corporation | Inductively coupled plasma downstream strip module |
US6499425B1 (en) | 1999-01-22 | 2002-12-31 | Micron Technology, Inc. | Quasi-remote plasma processing method and apparatus |
US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6772827B2 (en) | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
US6444039B1 (en) | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
JP4439665B2 (ja) * | 2000-03-29 | 2010-03-24 | 株式会社半導体エネルギー研究所 | プラズマcvd装置 |
US6444040B1 (en) | 2000-05-05 | 2002-09-03 | Applied Materials Inc. | Gas distribution plate |
KR100419756B1 (ko) * | 2000-06-23 | 2004-02-21 | 아넬바 가부시기가이샤 | 박막 형성 장치 |
US7270724B2 (en) | 2000-12-13 | 2007-09-18 | Uvtech Systems, Inc. | Scanning plasma reactor |
US6773683B2 (en) * | 2001-01-08 | 2004-08-10 | Uvtech Systems, Inc. | Photocatalytic reactor system for treating flue effluents |
US6852167B2 (en) * | 2001-03-01 | 2005-02-08 | Micron Technology, Inc. | Methods, systems, and apparatus for uniform chemical-vapor depositions |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US7589029B2 (en) | 2002-05-02 | 2009-09-15 | Micron Technology, Inc. | Atomic layer deposition and conversion |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US7135421B2 (en) | 2002-06-05 | 2006-11-14 | Micron Technology, Inc. | Atomic layer-deposited hafnium aluminum oxide |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
JP4352783B2 (ja) * | 2002-08-23 | 2009-10-28 | 東京エレクトロン株式会社 | ガス供給系及び処理システム |
US8580076B2 (en) * | 2003-05-22 | 2013-11-12 | Lam Research Corporation | Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith |
US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
US6829056B1 (en) | 2003-08-21 | 2004-12-07 | Michael Barnes | Monitoring dimensions of features at different locations in the processing of substrates |
US20050103265A1 (en) * | 2003-11-19 | 2005-05-19 | Applied Materials, Inc., A Delaware Corporation | Gas distribution showerhead featuring exhaust apertures |
US6983892B2 (en) * | 2004-02-05 | 2006-01-10 | Applied Materials, Inc. | Gas distribution showerhead for semiconductor processing |
JP4698251B2 (ja) * | 2004-02-24 | 2011-06-08 | アプライド マテリアルズ インコーポレイテッド | 可動又は柔軟なシャワーヘッド取り付け |
US20050221618A1 (en) * | 2004-03-31 | 2005-10-06 | Amrhein Frederick J | System for controlling a plenum output flow geometry |
US8083853B2 (en) | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
US8074599B2 (en) * | 2004-05-12 | 2011-12-13 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser curvature |
US8328939B2 (en) * | 2004-05-12 | 2012-12-11 | Applied Materials, Inc. | Diffuser plate with slit valve compensation |
US20050284573A1 (en) * | 2004-06-24 | 2005-12-29 | Egley Fred D | Bare aluminum baffles for resist stripping chambers |
US8349128B2 (en) * | 2004-06-30 | 2013-01-08 | Applied Materials, Inc. | Method and apparatus for stable plasma processing |
US20060000802A1 (en) * | 2004-06-30 | 2006-01-05 | Ajay Kumar | Method and apparatus for photomask plasma etching |
US7429410B2 (en) * | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
US20060062914A1 (en) * | 2004-09-21 | 2006-03-23 | Diwakar Garg | Apparatus and process for surface treatment of substrate using an activated reactive gas |
JP2006186306A (ja) * | 2004-09-30 | 2006-07-13 | Toshiba Ceramics Co Ltd | ガス拡散プレートおよびその製造方法 |
KR100610019B1 (ko) * | 2005-01-11 | 2006-08-08 | 삼성전자주식회사 | 플라즈마 분배장치 및 이를 구비하는 건식 스트리핑 장치 |
US20060228889A1 (en) * | 2005-03-31 | 2006-10-12 | Edelberg Erik A | Methods of removing resist from substrates in resist stripping chambers |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US20070044714A1 (en) * | 2005-08-31 | 2007-03-01 | Applied Materials, Inc. | Method and apparatus for maintaining a cross sectional shape of a diffuser during processing |
KR100766132B1 (ko) * | 2005-08-31 | 2007-10-12 | 코바렌트 마테리얼 가부시키가이샤 | 가스 분산판 및 그 제조방법 |
US7641762B2 (en) * | 2005-09-02 | 2010-01-05 | Applied Materials, Inc. | Gas sealing skirt for suspended showerhead in process chamber |
JP2007191792A (ja) * | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
US7776178B2 (en) * | 2006-10-25 | 2010-08-17 | Applied Materials, Inc. | Suspension for showerhead in process chamber |
US7909961B2 (en) * | 2006-10-30 | 2011-03-22 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7943005B2 (en) | 2006-10-30 | 2011-05-17 | Applied Materials, Inc. | Method and apparatus for photomask plasma etching |
US7879401B2 (en) * | 2006-12-22 | 2011-02-01 | The Regents Of The University Of Michigan | Organic vapor jet deposition using an exhaust |
US8715455B2 (en) | 2007-02-06 | 2014-05-06 | Tokyo Electron Limited | Multi-zone gas distribution system for a treatment system |
KR101451771B1 (ko) * | 2007-03-12 | 2014-10-16 | 아익스트론 에스이 | 향상된 처리 성능을 위한 신규한 플라즈마 시스템 |
DE102007026349A1 (de) * | 2007-06-06 | 2008-12-11 | Aixtron Ag | Aus einer Vielzahl diffusionsverschweißter Scheiben bestehender Gasverteiler |
US20080317973A1 (en) * | 2007-06-22 | 2008-12-25 | White John M | Diffuser support |
US8039052B2 (en) * | 2007-09-06 | 2011-10-18 | Intermolecular, Inc. | Multi-region processing system and heads |
US8673080B2 (en) | 2007-10-16 | 2014-03-18 | Novellus Systems, Inc. | Temperature controlled showerhead |
JP5179389B2 (ja) | 2008-03-19 | 2013-04-10 | 東京エレクトロン株式会社 | シャワーヘッド及び基板処理装置 |
US20100212591A1 (en) * | 2008-05-30 | 2010-08-26 | Alta Devices, Inc. | Reactor lid assembly for vapor deposition |
US7914603B2 (en) * | 2008-06-26 | 2011-03-29 | Mks Instruments, Inc. | Particle trap for a plasma source |
JP4943407B2 (ja) * | 2008-11-17 | 2012-05-30 | 東京エレクトロン株式会社 | Cvd処理装置及びcvd処理方法 |
TW201037100A (en) * | 2009-03-16 | 2010-10-16 | Alta Devices Inc | Vapor deposition reactor system and methods thereof |
US8398814B2 (en) * | 2009-07-08 | 2013-03-19 | Applied Materials, Inc. | Tunable gas flow equalizer |
JP5323628B2 (ja) * | 2009-09-17 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
US8419959B2 (en) * | 2009-09-18 | 2013-04-16 | Lam Research Corporation | Clamped monolithic showerhead electrode |
US20110097491A1 (en) * | 2009-10-27 | 2011-04-28 | Levy David H | Conveyance system including opposed fluid distribution manifolds |
TWI539025B (zh) * | 2010-04-28 | 2016-06-21 | 應用材料股份有限公司 | 用於短生命週期物種之具有內建電漿源的製程腔室蓋設計 |
US8869742B2 (en) * | 2010-08-04 | 2014-10-28 | Lam Research Corporation | Plasma processing chamber with dual axial gas injection and exhaust |
US9184028B2 (en) | 2010-08-04 | 2015-11-10 | Lam Research Corporation | Dual plasma volume processing apparatus for neutral/ion flux control |
CN106884157B (zh) | 2011-03-04 | 2019-06-21 | 诺发系统公司 | 混合型陶瓷喷淋头 |
US9129778B2 (en) * | 2011-03-18 | 2015-09-08 | Lam Research Corporation | Fluid distribution members and/or assemblies |
KR101900527B1 (ko) * | 2011-04-11 | 2018-09-19 | 램 리써치 코포레이션 | 반도체 프로세싱을 위한 e-빔 강화된 디커플링 소스 |
CN202601580U (zh) * | 2012-03-31 | 2012-12-12 | 北京京东方光电科技有限公司 | 一种刻蚀时间检测装置及刻蚀设备 |
US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
US9388494B2 (en) | 2012-06-25 | 2016-07-12 | Novellus Systems, Inc. | Suppression of parasitic deposition in a substrate processing system by suppressing precursor flow and plasma outside of substrate region |
TWI657164B (zh) * | 2012-07-25 | 2019-04-21 | 應用材料股份有限公司 | 用於大面積電漿增強化學氣相沈積之系統及方法的製程氣體流動引導元件 |
US10316409B2 (en) | 2012-12-21 | 2019-06-11 | Novellus Systems, Inc. | Radical source design for remote plasma atomic layer deposition |
US9255326B2 (en) | 2013-03-12 | 2016-02-09 | Novellus Systems, Inc. | Systems and methods for remote plasma atomic layer deposition |
KR101508274B1 (ko) * | 2013-06-04 | 2015-04-07 | (주)에스이피 | 모재의 표면에 마스킹에 의한 돌기 형성 방법 및 장치 |
US10781516B2 (en) | 2013-06-28 | 2020-09-22 | Lam Research Corporation | Chemical deposition chamber having gas seal |
US10808317B2 (en) | 2013-07-03 | 2020-10-20 | Lam Research Corporation | Deposition apparatus including an isothermal processing zone |
US9677176B2 (en) | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
US9490149B2 (en) * | 2013-07-03 | 2016-11-08 | Lam Research Corporation | Chemical deposition apparatus having conductance control |
US10351955B2 (en) * | 2013-12-18 | 2019-07-16 | Lam Research Corporation | Semiconductor substrate processing apparatus including uniformity baffles |
US10741365B2 (en) * | 2014-05-05 | 2020-08-11 | Lam Research Corporation | Low volume showerhead with porous baffle |
US10378107B2 (en) | 2015-05-22 | 2019-08-13 | Lam Research Corporation | Low volume showerhead with faceplate holes for improved flow uniformity |
US10023959B2 (en) | 2015-05-26 | 2018-07-17 | Lam Research Corporation | Anti-transient showerhead |
WO2016209886A1 (en) * | 2015-06-22 | 2016-12-29 | University Of South Carolina | MOCVD SYSTEM INJECTOR FOR FAST GROWTH OF AlInGaBN MATERIAL |
US9758868B1 (en) | 2016-03-10 | 2017-09-12 | Lam Research Corporation | Plasma suppression behind a showerhead through the use of increased pressure |
DE102016108845A1 (de) | 2016-05-12 | 2017-11-16 | Stephan Wege | Gasinjektor für Reaktorbereiche |
US9824884B1 (en) | 2016-10-06 | 2017-11-21 | Lam Research Corporation | Method for depositing metals free ald silicon nitride films using halide-based precursors |
US10403476B2 (en) | 2016-11-09 | 2019-09-03 | Lam Research Corporation | Active showerhead |
US11367591B2 (en) * | 2016-12-06 | 2022-06-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Composite plasma modulator for plasma chamber |
US10604841B2 (en) | 2016-12-14 | 2020-03-31 | Lam Research Corporation | Integrated showerhead with thermal control for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US11015247B2 (en) | 2017-12-08 | 2021-05-25 | Lam Research Corporation | Integrated showerhead with improved hole pattern for delivering radical and precursor gas to a downstream chamber to enable remote plasma film deposition |
US20210214846A1 (en) * | 2020-01-15 | 2021-07-15 | Asm Ip Holding B.V. | Showerhead assembly and components |
CN111722479B (zh) * | 2020-06-23 | 2023-09-08 | 北京北方华创微电子装备有限公司 | 光刻胶的去胶方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4209357A (en) * | 1979-05-18 | 1980-06-24 | Tegal Corporation | Plasma reactor apparatus |
US4263088A (en) * | 1979-06-25 | 1981-04-21 | Motorola, Inc. | Method for process control of a plasma reaction |
JPS6074626A (ja) * | 1983-09-30 | 1985-04-26 | Fujitsu Ltd | ウエハー処理方法及び装置 |
US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
JPH0740566B2 (ja) * | 1986-02-04 | 1995-05-01 | 株式会社日立製作所 | プラズマ処理方法及びその装置 |
DD271776A1 (de) * | 1988-05-06 | 1989-09-13 | Elektromat Veb | Vorrichtung zur gaszufuehrung und -ableitung fuer die gasphasenbearbeitung von werkstuecken |
JP2890432B2 (ja) * | 1989-01-10 | 1999-05-17 | 富士通株式会社 | 有機物の灰化方法 |
KR0170391B1 (ko) * | 1989-06-16 | 1999-03-30 | 다카시마 히로시 | 피처리체 처리장치 및 처리방법 |
JPH088243B2 (ja) * | 1989-12-13 | 1996-01-29 | 三菱電機株式会社 | 表面クリーニング装置及びその方法 |
KR910016054A (ko) * | 1990-02-23 | 1991-09-30 | 미다 가쓰시게 | 마이크로 전자 장치용 표면 처리 장치 및 그 방법 |
DE4011933C2 (de) * | 1990-04-12 | 1996-11-21 | Balzers Hochvakuum | Verfahren zur reaktiven Oberflächenbehandlung eines Werkstückes sowie Behandlungskammer hierfür |
DE4025396A1 (de) * | 1990-08-10 | 1992-02-13 | Leybold Ag | Einrichtung fuer die herstellung eines plasmas |
US5082517A (en) * | 1990-08-23 | 1992-01-21 | Texas Instruments Incorporated | Plasma density controller for semiconductor device processing equipment |
JP2987663B2 (ja) * | 1992-03-10 | 1999-12-06 | 株式会社日立製作所 | 基板処理装置 |
JP3242166B2 (ja) * | 1992-11-19 | 2001-12-25 | 株式会社日立製作所 | エッチング装置 |
JP3468859B2 (ja) * | 1994-08-16 | 2003-11-17 | 富士通株式会社 | 気相処理装置及び気相処理方法 |
-
1996
- 1996-03-29 US US08/623,867 patent/US5614026A/en not_active Expired - Lifetime
-
1997
- 1997-03-27 JP JP53539997A patent/JP4118954B2/ja not_active Expired - Fee Related
- 1997-03-27 DE DE69713080T patent/DE69713080T2/de not_active Expired - Lifetime
- 1997-03-27 EP EP97916234A patent/EP0889976B1/de not_active Expired - Lifetime
- 1997-03-27 WO PCT/US1997/004933 patent/WO1997037059A1/en active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2007038967A1 (en) | 2005-10-05 | 2007-04-12 | Pva Tepla Ag | Down-stream plasma etching with deflectable plasma beam |
Also Published As
Publication number | Publication date |
---|---|
DE69713080D1 (de) | 2002-07-11 |
EP0889976A1 (de) | 1999-01-13 |
EP0889976B1 (de) | 2002-06-05 |
JP2000507746A (ja) | 2000-06-20 |
WO1997037059A1 (en) | 1997-10-09 |
US5614026A (en) | 1997-03-25 |
JP4118954B2 (ja) | 2008-07-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69713080T2 (de) | Apparatur zur gleichmässigen verteilung von plasma | |
DE69427603D1 (de) | Mehrprozessorverfahren zur Zerlegung von ATM Paketen | |
DE60014589D1 (de) | System zur interaktiven verteilung von wählbaren vorstellungen | |
DE69735359D1 (de) | System zur auswahl von produkten | |
DE69722293D1 (de) | Element zur Abtrennung von Wasserstoff | |
DE69522385D1 (de) | Computersystem zur Ausführung von Verzweigungsbefehlen | |
DE59508184D1 (de) | Einrichtung zur Bearbeitung von Material | |
DE69326323D1 (de) | Apparatur zur phakoemulsifikation | |
DE69928505D1 (de) | Vorrichtung zur verbesserung der verteilung von gas | |
DE69629739D1 (de) | Vorrichtung zur Inspektion von O-Ringen | |
DE69509195T2 (de) | Verfahren zur Entsalzung von Phenolteer | |
DE69714519D1 (de) | Vorrichtung zur Qualitätsüberprüfung von Spulen | |
DE59708776D1 (de) | Vorrichtung zur phasentrennung | |
DE69819093D1 (de) | Apparat zur Herstellung von Metalbändern | |
DE29504288U1 (de) | Schutzvorrichtung zur Rückhaltung von Flüssigkeiten | |
DE69702884T2 (de) | Verfahren zur Destillierung von Hexamethylcyclotrisiloxan | |
DE69635137D1 (de) | Apparatur zur elektromagnetischen therapie | |
DE59700067D1 (de) | Verfahren zur Stabilisierung von hydridischen Silanen | |
DE59609427D1 (de) | Vorrichtung zur elektrophoretischen Beschichtung von Substraten | |
DE9400987U1 (de) | Apparatur zur Behandlung von Flüssigkeiten | |
DE69616497T2 (de) | Verfahren zur Alkylierung von Imiden | |
DE69724710D1 (de) | Verfahren zur Disproportionierung von Toluol | |
DE29612323U1 (de) | Vorrichtung zur Isolierung von Rohrleitungen | |
DE29510665U1 (de) | Vorrichtung zur Festlegung von Gewehren | |
DE29617515U1 (de) | Vorrichtung zur kontinuierlichen Reinigung von Profilen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |