Classifications

• • G—PHYSICS
  • G11—INFORMATION STORAGE
  • G11C—STATIC STORES
  • G11C16/00—Erasable programmable read-only memories
  • G11C16/02—Erasable programmable read-only memories electrically programmable
  • G11C16/06—Auxiliary circuits, e.g. for writing into memory
  • G11C16/10—Programming or data input circuits
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
  • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
  • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
  • H01L21/32055—Deposition of semiconductive layers, e.g. poly - or amorphous silicon layers
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
  • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
  • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
  • H01L29/76—Unipolar devices, e.g. field effect transistors
  • H01L29/772—Field effect transistors
  • H01L29/78—Field effect transistors with field effect produced by an insulated gate
  • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
  • H01L29/7881—Programmable transistors with only two possible levels of programmation
  • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection

Applications Claiming Priority (2)

Publications (2)

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ID=19454775

Family Applications (1)

Country Status (8)

Families Citing this family (7)

Family Cites Families (12)

• 1996
  • 1996-04-01 KR KR1019960009730A patent/KR100217900B1/ko not_active IP Right Cessation
• 1997
  • 1997-03-28 TW TW086104001A patent/TW334616B/zh not_active IP Right Cessation
  • 1997-03-31 JP JP7936197A patent/JP2963882B2/ja not_active Expired - Fee Related
  • 1997-04-01 CN CN97113084A patent/CN1084931C/zh not_active Expired - Fee Related
  • 1997-04-01 US US08/831,044 patent/US5867426A/en not_active Expired - Lifetime
  • 1997-04-01 GB GB9706573A patent/GB2311895B/en not_active Expired - Fee Related
  • 1997-04-01 DE DE69719584T patent/DE69719584T2/de not_active Expired - Lifetime
  • 1997-04-01 EP EP97105431A patent/EP0800179B1/de not_active Expired - Lifetime

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