DE69723700D1 - Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher - Google Patents

Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher

Info

Publication number
DE69723700D1
DE69723700D1 DE69723700T DE69723700T DE69723700D1 DE 69723700 D1 DE69723700 D1 DE 69723700D1 DE 69723700 T DE69723700 T DE 69723700T DE 69723700 T DE69723700 T DE 69723700T DE 69723700 D1 DE69723700 D1 DE 69723700D1
Authority
DE
Germany
Prior art keywords
level memory
volatile multi
programming
volatile
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69723700T
Other languages
English (en)
Inventor
Marco Pasotti
Pier Luigi Rolandi
Roberto Canegallo
Danilo Gerna
Ernestina Chioffi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
STMicroelectronics SRL
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SRL filed Critical STMicroelectronics SRL
Application granted granted Critical
Publication of DE69723700D1 publication Critical patent/DE69723700D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
DE69723700T 1997-11-03 1997-11-03 Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher Expired - Lifetime DE69723700D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP97830566A EP0913832B1 (de) 1997-11-03 1997-11-03 Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher

Publications (1)

Publication Number Publication Date
DE69723700D1 true DE69723700D1 (de) 2003-08-28

Family

ID=8230839

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69723700T Expired - Lifetime DE69723700D1 (de) 1997-11-03 1997-11-03 Verfahren zur Programmierung eines nichtflüchtigen Mehrpegelspeichers und nichtflüchtiger Mehrpegelspeicher

Country Status (3)

Country Link
US (1) US6011715A (de)
EP (1) EP0913832B1 (de)
DE (1) DE69723700D1 (de)

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IT1303204B1 (it) * 1998-11-27 2000-10-30 St Microelectronics Srl Metodo di programmazione di celle di memoria non volatile ad elevataprecisione, con velocita' di programmazione ottimizzata.
EP1074995B1 (de) * 1999-08-03 2005-10-26 STMicroelectronics S.r.l. Programmierungverfahren eines nichtflüchtigen Multibit Speichers durch Regelung der Gatespannung
US6327183B1 (en) * 2000-01-10 2001-12-04 Advanced Micro Devices, Inc. Nonlinear stepped programming voltage
US6185127B1 (en) * 2000-01-31 2001-02-06 Summit Microelectronics, Inc. Selectable analog functions on a configurable device and method employing nonvolatile memory
US6269025B1 (en) 2000-02-09 2001-07-31 Advanced Micro Devices, Inc. Memory system having a program and erase voltage modifier
US6205055B1 (en) * 2000-02-25 2001-03-20 Advanced Micro Devices, Inc. Dynamic memory cell programming voltage
US6304487B1 (en) 2000-02-28 2001-10-16 Advanced Micro Devices, Inc. Register driven means to control programming voltages
US6400605B1 (en) * 2000-05-30 2002-06-04 Summit Microelectronics, Inc. Method and system for pulse shaping in test and program modes
DE60102203D1 (de) * 2000-12-15 2004-04-08 St Microelectronics Srl Programmierverfahren für eine Mehrpegelspeicherzelle
US6556481B1 (en) 2001-02-21 2003-04-29 Aplus Flash Technology, Inc. 3-step write operation nonvolatile semiconductor one-transistor, nor-type flash EEPROM memory cell
US6620682B1 (en) 2001-02-27 2003-09-16 Aplus Flash Technology, Inc. Set of three level concurrent word line bias conditions for a nor type flash memory array
US6515904B2 (en) 2001-03-21 2003-02-04 Matrix Semiconductor, Inc. Method and system for increasing programming bandwidth in a non-volatile memory device
US6574145B2 (en) * 2001-03-21 2003-06-03 Matrix Semiconductor, Inc. Memory device and method for sensing while programming a non-volatile memory cell
US6504760B1 (en) * 2001-06-22 2003-01-07 Intel Corporation Charging a capacitance of a memory cell and charger
US6700818B2 (en) * 2002-01-31 2004-03-02 Saifun Semiconductors Ltd. Method for operating a memory device
US6862223B1 (en) * 2002-07-05 2005-03-01 Aplus Flash Technology, Inc. Monolithic, combo nonvolatile memory allowing byte, page and block write with no disturb and divided-well in the cell array using a unified cell structure and technology with a new scheme of decoder and layout
US7178004B2 (en) * 2003-01-31 2007-02-13 Yan Polansky Memory array programming circuit and a method for using the circuit
ATE443330T1 (de) * 2003-07-30 2009-10-15 Sandisk Il Ltd Verfahren und system zur optimierung von zuverlässigkeit und leistungsfähigkeit von programmierdaten in nichtflüchtigen speicherbausteinen
US7009887B1 (en) * 2004-06-03 2006-03-07 Fasl Llc Method of determining voltage compensation for flash memory devices
US7957189B2 (en) * 2004-07-26 2011-06-07 Sandisk Il Ltd. Drift compensation in a flash memory
ITMI20050798A1 (it) * 2005-05-03 2006-11-04 Atmel Corp Metodo e sistema per la generazi0ne di impulsi di programmazione durante la programmazione di dispositivi elettronici non volatili
US7656710B1 (en) 2005-07-14 2010-02-02 Sau Ching Wong Adaptive operations for nonvolatile memories
US7808818B2 (en) * 2006-01-12 2010-10-05 Saifun Semiconductors Ltd. Secondary injection for NROM
US7397703B2 (en) * 2006-03-21 2008-07-08 Freescale Semiconductor, Inc. Non-volatile memory with controlled program/erase
US20070255889A1 (en) * 2006-03-22 2007-11-01 Yoav Yogev Non-volatile memory device and method of operating the device
US7605579B2 (en) * 2006-09-18 2009-10-20 Saifun Semiconductors Ltd. Measuring and controlling current consumption and output current of charge pumps
US20080239599A1 (en) * 2007-04-01 2008-10-02 Yehuda Yizraeli Clamping Voltage Events Such As ESD
WO2008124760A2 (en) * 2007-04-10 2008-10-16 Sandisk Corporation Non-volatile memory and method for predictive programming
US7643348B2 (en) 2007-04-10 2010-01-05 Sandisk Corporation Predictive programming in non-volatile memory
US7551483B2 (en) 2007-04-10 2009-06-23 Sandisk Corporation Non-volatile memory with predictive programming
KR101274205B1 (ko) * 2007-07-13 2013-06-14 삼성전자주식회사 비휘발성 메모리 소자의 동작 방법
US8060798B2 (en) 2007-07-19 2011-11-15 Micron Technology, Inc. Refresh of non-volatile memory cells based on fatigue conditions
US7948802B2 (en) * 2007-12-04 2011-05-24 Micron Technology, Inc. Sensing memory cells
JP5529858B2 (ja) * 2008-06-12 2014-06-25 サンディスク テクノロジィース インコーポレイテッド インデックスプログラミングおよび削減されたベリファイを有する不揮発性メモリおよび方法
US7800945B2 (en) 2008-06-12 2010-09-21 Sandisk Corporation Method for index programming and reduced verify in nonvolatile memory
US7813172B2 (en) 2008-06-12 2010-10-12 Sandisk Corporation Nonvolatile memory with correlated multiple pass programming
US7826271B2 (en) 2008-06-12 2010-11-02 Sandisk Corporation Nonvolatile memory with index programming and reduced verify
US7796435B2 (en) 2008-06-12 2010-09-14 Sandisk Corporation Method for correlated multiple pass programming in nonvolatile memory
US7715235B2 (en) 2008-08-25 2010-05-11 Sandisk Corporation Non-volatile memory and method for ramp-down programming
US8223551B2 (en) * 2009-02-19 2012-07-17 Micron Technology, Inc. Soft landing for desired program threshold voltage
US8432740B2 (en) 2011-07-21 2013-04-30 Sandisk Technologies Inc. Program algorithm with staircase waveform decomposed into multiple passes
US8750045B2 (en) 2012-07-27 2014-06-10 Sandisk Technologies Inc. Experience count dependent program algorithm for flash memory
US9911492B2 (en) * 2014-01-17 2018-03-06 International Business Machines Corporation Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write period

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US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5629890A (en) * 1994-09-14 1997-05-13 Information Storage Devices, Inc. Integrated circuit system for analog signal storing and recovery incorporating read while writing voltage program method
US5694356A (en) * 1994-11-02 1997-12-02 Invoice Technology, Inc. High resolution analog storage EPROM and flash EPROM
EP0735542A1 (de) * 1995-03-31 1996-10-02 STMicroelectronics S.r.l. Leseschaltung für nichtflüchtige Mehrpegel-Speicherzellenanordnungen
TW389909B (en) * 1995-09-13 2000-05-11 Toshiba Corp Nonvolatile semiconductor memory device and its usage
KR0185611B1 (ko) * 1995-12-11 1999-04-15 김광호 불휘발성 반도체 메모리장치의 고전압 레벨 최적화 회로 및 그 방법
JP3180669B2 (ja) * 1996-06-03 2001-06-25 日本電気株式会社 不揮発性半導体メモリおよびその書き込み方法
EP0833348B1 (de) * 1996-09-30 2003-07-09 STMicroelectronics S.r.l. Verfahren und Vorrichtung zur Prüfung von mehrstufiger Programmierung von Schwebegatterspeicherzellen, insbesondere Flash-Zellen

Also Published As

Publication number Publication date
EP0913832B1 (de) 2003-07-23
US6011715A (en) 2000-01-04
EP0913832A1 (de) 1999-05-06

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