DE69725678D1 - Verwendungsmethode eines permanenten z-Achse-Materials - Google Patents

Verwendungsmethode eines permanenten z-Achse-Materials

Info

Publication number
DE69725678D1
DE69725678D1 DE69725678T DE69725678T DE69725678D1 DE 69725678 D1 DE69725678 D1 DE 69725678D1 DE 69725678 T DE69725678 T DE 69725678T DE 69725678 T DE69725678 T DE 69725678T DE 69725678 D1 DE69725678 D1 DE 69725678D1
Authority
DE
Germany
Prior art keywords
permanent
axis material
axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69725678T
Other languages
English (en)
Other versions
DE69725678T2 (de
Inventor
John J Budnaitis
Jimmy Leong
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WL Gore and Associates Inc
Original Assignee
WL Gore and Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WL Gore and Associates Inc filed Critical WL Gore and Associates Inc
Publication of DE69725678D1 publication Critical patent/DE69725678D1/de
Application granted granted Critical
Publication of DE69725678T2 publication Critical patent/DE69725678T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/073Multiple probes
    • G01R1/07307Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07314Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being perpendicular to test object, e.g. bed of nails or probe with bump contacts on a rigid support
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02General constructional details
    • G01R1/06Measuring leads; Measuring probes
    • G01R1/067Measuring probes
    • G01R1/06711Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06755Material aspects
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851Testing of integrated circuits [IC]
    • G01R31/2855Environmental, reliability or burn-in testing
    • G01R31/286External aspects, e.g. related to chambers, contacting devices or handlers
    • G01R31/2863Contacting devices, e.g. sockets, burn-in boards or mounting fixtures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3011Impedance
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00Metal working
    • Y10T29/49Method of mechanical manufacture
    • Y10T29/49002Electrical device making
    • Y10T29/49117Conductor or circuit manufacturing
    • Y10T29/49124On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/4913Assembling to base an electrical component, e.g., capacitor, etc.
    • Y10T29/49144Assembling to base an electrical component, e.g., capacitor, etc. by metal fusion
DE69725678T 1996-11-08 1997-11-05 Verwendungsmethode eines permanenten z-Achse-Materials Expired - Lifetime DE69725678T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/748,112 US5966593A (en) 1996-11-08 1996-11-08 Method of forming a wafer level contact sheet having a permanent z-axis material
US748112 1996-11-08

Publications (2)

Publication Number Publication Date
DE69725678D1 true DE69725678D1 (de) 2003-11-27
DE69725678T2 DE69725678T2 (de) 2004-07-22

Family

ID=25008076

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69725678T Expired - Lifetime DE69725678T2 (de) 1996-11-08 1997-11-05 Verwendungsmethode eines permanenten z-Achse-Materials

Country Status (6)

Country Link
US (1) US5966593A (de)
EP (1) EP0841697B1 (de)
JP (1) JPH10247707A (de)
KR (1) KR19980042136A (de)
DE (1) DE69725678T2 (de)
ES (1) ES2207708T3 (de)

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US6114795A (en) * 1997-06-24 2000-09-05 Tdk Corporation Piezoelectric component and manufacturing method thereof
US6657313B1 (en) * 1999-01-19 2003-12-02 International Business Machines Corporation Dielectric interposer for chip to substrate soldering
JP3980801B2 (ja) 1999-09-16 2007-09-26 株式会社東芝 三次元構造体およびその製造方法
US6434817B1 (en) * 1999-12-03 2002-08-20 Delphi Technologies, Inc. Method for joining an integrated circuit
US6531945B1 (en) * 2000-03-10 2003-03-11 Micron Technology, Inc. Integrated circuit inductor with a magnetic core
DE60030963D1 (de) * 2000-06-06 2006-11-09 St Microelectronics Srl Elektronischer Halbleiterbaustein mit Wärmeverteiler
WO2002015255A1 (en) * 2000-08-11 2002-02-21 Chem Trace Corporation System and method for cleaning semiconductor fabrication equipment parts
US6756797B2 (en) * 2001-01-31 2004-06-29 Wentworth Laboratories Inc. Planarizing interposer for thermal compensation of a probe card
JP2002353160A (ja) * 2001-05-28 2002-12-06 Murata Mfg Co Ltd 回路基板及びその製造方法
US7045072B2 (en) * 2003-07-24 2006-05-16 Tan Samantha S H Cleaning process and apparatus for silicate materials
US7091132B2 (en) * 2003-07-24 2006-08-15 Applied Materials, Inc. Ultrasonic assisted etch using corrosive liquids
US6971081B2 (en) * 2003-09-26 2005-11-29 Lsi Logic Corporation Routing for reducing impedance distortions
US7754609B1 (en) 2003-10-28 2010-07-13 Applied Materials, Inc. Cleaning processes for silicon carbide materials
US8323675B2 (en) 2004-04-20 2012-12-04 Genzyme Corporation Soft tissue prosthesis for repairing a defect of an abdominal wall or a pelvic cavity wall
US7304490B2 (en) * 2004-11-05 2007-12-04 Solid State Measurements, Inc. In-situ wafer and probe desorption using closed loop heating
TWI261325B (en) * 2005-03-25 2006-09-01 Advanced Semiconductor Eng Package structure of semiconductor and wafer-level formation thereof
US8107777B2 (en) * 2005-11-02 2012-01-31 John Farah Polyimide substrate bonded to other substrate
JP5156752B2 (ja) * 2006-11-01 2013-03-06 クアンタム グローバル テクノロジーズ リミテッド ライアビリティ カンパニー チャンバーコンポーネントを洗浄する方法及び装置
US9610758B2 (en) * 2007-06-21 2017-04-04 General Electric Company Method of making demountable interconnect structure
US9953910B2 (en) * 2007-06-21 2018-04-24 General Electric Company Demountable interconnect structure
TWI411073B (zh) * 2010-08-13 2013-10-01 Unimicron Technology Corp 嵌埋被動元件之封裝基板及其製法
DE102012109228A1 (de) * 2012-09-28 2014-04-03 Osram Opto Semiconductors Gmbh Verfahren zum Ermitteln der Permeabilität einer dielektrischen Schicht eines optoelektronischen Bauelementes; Vorrichtung zum Ermitteln der Permeabilität einer dielektrischen Schicht eines optoelektronischen Bauelementes; optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelementes

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US26837A (en) * 1860-01-17 craig
NL135260B (de) 1963-08-16 1900-01-01
US3609547A (en) * 1970-03-27 1971-09-28 Eugene A Slusser Integrated circuit test system
CA962021A (en) * 1970-05-21 1975-02-04 Robert W. Gore Porous products and process therefor
FR2114169A6 (de) * 1970-11-18 1972-06-30 Honeywell Bull
CA1063730A (en) * 1975-11-11 1979-10-02 Robert F. Cobaugh Printed circuit board assembly
US4540229A (en) * 1982-04-12 1985-09-10 At&T Bell Laboratories Electrical interconnection apparatus
US4482516A (en) * 1982-09-10 1984-11-13 W. L. Gore & Associates, Inc. Process for producing a high strength porous polytetrafluoroethylene product having a coarse microstructure
US5007841A (en) * 1983-05-31 1991-04-16 Trw Inc. Integrated-circuit chip interconnection system
DE3375248D1 (en) * 1983-07-11 1988-02-11 Toshiba Chem Corp Conductive synthetic resin molding material
EP0151490B1 (de) * 1984-02-09 1991-01-16 Toyota Jidosha Kabushiki Kaisha Verfahren zur Herstellung von ultrafeinen Keramikpartikeln
US4683550A (en) * 1984-07-30 1987-07-28 Burr-Brown Corporation Personal computer instrumentation system including carrier board having bus-oriented plug-in instrumentation modules
DE3586893D1 (de) * 1984-12-28 1993-01-21 Micro Co Ltd Stapelverfahren fuer gedruckte schaltungen.
US4840570A (en) * 1988-06-27 1989-06-20 Teknekron Infoswitch Corporation Plug-in card module
US5440240A (en) * 1991-06-04 1995-08-08 Micron Technology, Inc. Z-axis interconnect for discrete die burn-in for nonpackaged die
US4985296A (en) * 1989-03-16 1991-01-15 W. L. Gore & Associates, Inc. Polytetrafluoroethylene film
US4963225A (en) * 1989-10-20 1990-10-16 Tektronix, Inc. Method of fabricating a contact device
US4968931A (en) * 1989-11-03 1990-11-06 Motorola, Inc. Apparatus and method for burning in integrated circuit wafers
US5007163A (en) * 1990-04-18 1991-04-16 International Business Machines Corporation Non-destructure method of performing electrical burn-in testing of semiconductor chips
EP0526133B1 (de) * 1991-07-26 1997-03-19 Nec Corporation Mehrschichtige Leiterplatte aus Polyimid und Verfahren zur Herstellung
US5252857A (en) * 1991-08-05 1993-10-12 International Business Machines Corporation Stacked DCA memory chips
US5541524A (en) * 1991-08-23 1996-07-30 Nchip, Inc. Burn-in technologies for unpackaged integrated circuits
KR100288344B1 (ko) * 1991-09-17 2001-11-30 마쯔모또 에이찌 프린트배선판용검사전극유니트와그것을포함하는검사장치및프린트배선판용의검사방법
US5279975A (en) * 1992-02-07 1994-01-18 Micron Technology, Inc. Method of testing individual dies on semiconductor wafers prior to singulation
US5245750A (en) * 1992-02-28 1993-09-21 Hughes Aircraft Company Method of connecting a spaced ic chip to a conductor and the article thereby obtained
US5306546A (en) * 1992-12-22 1994-04-26 Hughes Aircraft Company Multi chip module substrate
JPH06325810A (ja) * 1993-03-08 1994-11-25 Whitaker Corp:The コンタクトモジュール及びそれを使用するピングリッドアレイ
FR2703839B1 (fr) * 1993-04-09 1995-07-07 Framatome Connectors France Connecteur intermédiaire entre carte de circuit imprimé et substrat à circuits électroniques.
US5428190A (en) * 1993-07-02 1995-06-27 Sheldahl, Inc. Rigid-flex board with anisotropic interconnect and method of manufacture
US5531942A (en) * 1994-06-16 1996-07-02 Fry's Metals, Inc. Method of making electroconductive adhesive particles for Z-axis application
US5498467A (en) * 1994-07-26 1996-03-12 W. L. Gore & Associates, Inc. Process for preparing selectively conductive materials by electroless metal deposition and product made therefrom
US5637834A (en) * 1995-02-03 1997-06-10 Motorola, Inc. Multilayer circuit substrate and method for forming same
US5602491A (en) * 1995-03-16 1997-02-11 Motorola, Inc. Integrated circuit testing board having constrained thermal expansion characteristics
US5766979A (en) * 1996-11-08 1998-06-16 W. L. Gore & Associates, Inc. Wafer level contact sheet and method of assembly

Also Published As

Publication number Publication date
EP0841697A2 (de) 1998-05-13
EP0841697A3 (de) 1998-05-20
DE69725678T2 (de) 2004-07-22
EP0841697B1 (de) 2003-10-22
US5966593A (en) 1999-10-12
JPH10247707A (ja) 1998-09-14
KR19980042136A (ko) 1998-08-17
ES2207708T3 (es) 2004-06-01

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