DE69727001D1 - Verfahren zur Herstellung eines Sensors - Google Patents
Verfahren zur Herstellung eines SensorsInfo
- Publication number
- DE69727001D1 DE69727001D1 DE69727001T DE69727001T DE69727001D1 DE 69727001 D1 DE69727001 D1 DE 69727001D1 DE 69727001 T DE69727001 T DE 69727001T DE 69727001 T DE69727001 T DE 69727001T DE 69727001 D1 DE69727001 D1 DE 69727001D1
- Authority
- DE
- Germany
- Prior art keywords
- sensor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
- G01N33/0004—Gaseous mixtures, e.g. polluted air
- G01N33/0009—General constructional details of gas analysers, e.g. portable test equipment
- G01N33/0011—Sample conditioning
- G01N33/0014—Sample conditioning by eliminating a gas
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US620729 | 1996-03-25 | ||
US08/620,729 US5798556A (en) | 1996-03-25 | 1996-03-25 | Sensor and method of fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69727001D1 true DE69727001D1 (de) | 2004-02-05 |
DE69727001T2 DE69727001T2 (de) | 2004-11-11 |
Family
ID=24487150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69727001T Expired - Lifetime DE69727001T2 (de) | 1996-03-25 | 1997-03-19 | Verfahren zur Herstellung eines Sensors |
Country Status (3)
Country | Link |
---|---|
US (2) | US5798556A (de) |
EP (1) | EP0798554B1 (de) |
DE (1) | DE69727001T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4183789B2 (ja) * | 1998-01-14 | 2008-11-19 | 株式会社堀場製作所 | 物理現象および/または化学現象の検出装置 |
US20040265838A1 (en) * | 1998-02-06 | 2004-12-30 | Affymetrix, Inc. | Method of manufacturing |
AU2586799A (en) | 1998-02-06 | 1999-08-23 | Affymetrix, Inc. | Method of quality control in manufacturing processes |
DE19819575C1 (de) | 1998-04-30 | 2000-03-16 | Siemens Ag | Wasserstoffsensor |
EP1093571B1 (de) * | 1998-07-07 | 2003-05-21 | The Goodyear Tire & Rubber Company | Verfahren zur herstellung eines kapazitiven sensors |
TW396408B (en) * | 1998-11-20 | 2000-07-01 | Nat Science Council | Method of manufacturing ion sensor device and the device thereof |
DE19916798C2 (de) * | 1999-04-14 | 2001-10-18 | Daimler Chrysler Ag | Dünnschicht-Halbleiter-Gassensor und Verfahren zum Nachweis von Gasen |
US6690569B1 (en) * | 1999-12-08 | 2004-02-10 | Sensirion A/G | Capacitive sensor |
US6480370B1 (en) | 1999-12-28 | 2002-11-12 | Intel Corporation | Polymeric dielectric material for high-energy density capacitors |
DE10113355A1 (de) * | 2000-04-28 | 2001-09-13 | Vladimir M Mirsky | Kalibrierung und Erhöhung der Selektivität der Chemosensoren |
AU2002220975A1 (en) * | 2000-12-15 | 2002-06-24 | Sensirion Ag | Material sensor with protective layer |
DE10204458A1 (de) * | 2002-02-05 | 2003-08-14 | Stefan Raible | Gassensor |
US7289230B2 (en) * | 2002-02-06 | 2007-10-30 | Cyberoptics Semiconductors, Inc. | Wireless substrate-like sensor |
US20050224902A1 (en) * | 2002-02-06 | 2005-10-13 | Ramsey Craig C | Wireless substrate-like sensor |
US6900508B2 (en) * | 2002-04-16 | 2005-05-31 | Stmicroelectronics, Inc. | Embedded flat film molding |
US8383342B2 (en) | 2002-04-24 | 2013-02-26 | The University Of North Carolina At Greensboro | Compositions, products, methods and systems to monitor water and other ecosystems |
US9126165B1 (en) | 2002-04-24 | 2015-09-08 | The University Of North Carolina At Greensboro | Nucleic acid arrays to monitor water and other ecosystems |
US8048623B1 (en) | 2002-04-24 | 2011-11-01 | The University Of North Carolina At Greensboro | Compositions, products, methods and systems to monitor water and other ecosystems |
DE10245947B4 (de) * | 2002-09-30 | 2007-01-04 | Eads Deutschland Gmbh | Mikrogasanalysesystem mit beheizbarem Filter und Verfahren zur Gasanalyse |
WO2005012716A1 (en) * | 2003-07-25 | 2005-02-10 | Siemens Vdo Automotive Inc. | Integrated vapor control valve and sensor |
KR100529233B1 (ko) * | 2003-09-06 | 2006-02-24 | 한국전자통신연구원 | 센서 및 그 제조 방법 |
US20050147489A1 (en) * | 2003-12-24 | 2005-07-07 | Tian-An Chen | Wafer supporting system for semiconductor wafers |
CN1938588B (zh) * | 2004-01-27 | 2011-11-09 | H2Scan公司 | 隔离的气体传感器结构 |
WO2005088683A2 (en) * | 2004-03-09 | 2005-09-22 | Cyberoptics Semiconductor, Inc. | Wireless substrate-like sensor |
US7424885B2 (en) * | 2005-02-24 | 2008-09-16 | Continental Automotive Canada, Inc. | Integrated vapor control valve with full range hydrocarbon sensor |
DE102005016751B3 (de) * | 2005-04-11 | 2006-12-14 | Schott Ag | Verfahren zur Herstellung gehäuster elektronischer Bauelemente |
US7893697B2 (en) | 2006-02-21 | 2011-02-22 | Cyberoptics Semiconductor, Inc. | Capacitive distance sensing in semiconductor processing tools |
JP2009527764A (ja) | 2006-02-21 | 2009-07-30 | サイバーオプティクス セミコンダクタ インコーポレイテッド | 半導体加工ツールにおける静電容量距離検出 |
KR100787228B1 (ko) * | 2006-06-12 | 2007-12-21 | 삼성전자주식회사 | 2축 지자기 센서 및 그 제작방법 |
DE112007002309T5 (de) | 2006-09-29 | 2009-07-30 | Cyberoptics Semiconductor, Inc., Beaverton | Substratähnlicher Teilchensensor |
JP4739166B2 (ja) * | 2006-10-24 | 2011-08-03 | 本田技研工業株式会社 | ガスセンサ |
DE102006060113A1 (de) * | 2006-12-20 | 2008-06-26 | Appliedsensor Gmbh | Sensor und Herstellungsverfahren eines Sensors |
WO2008105197A1 (ja) * | 2007-02-28 | 2008-09-04 | Yamatake Corporation | フローセンサ |
EP2128573A1 (de) * | 2007-02-28 | 2009-12-02 | Yamatake Corporation | Sensor, sensortemperaturregelverfahren und abnormitätsbehebungsverfahren |
US7778793B2 (en) | 2007-03-12 | 2010-08-17 | Cyberoptics Semiconductor, Inc. | Wireless sensor for semiconductor processing systems |
WO2009034843A1 (ja) * | 2007-09-11 | 2009-03-19 | The Ritsumeikan Trust | 半導体式ガスセンサ及びその製造方法 |
KR100942439B1 (ko) * | 2007-12-28 | 2010-02-17 | 전자부품연구원 | 마이크로 가스센서 및 제조방법 |
DE102010041763A1 (de) * | 2010-09-30 | 2012-04-05 | Siemens Aktiengesellschaft | Mikromechanisches Substrat |
EP2565635B1 (de) | 2011-09-02 | 2017-11-15 | Sensirion AG | Sensorchip und Verfahren zur Herstellung eines Sensorchips |
WO2013187910A1 (en) * | 2012-06-15 | 2013-12-19 | Empire Technology Development Llc | Self-cleaning lens |
CN102730621B (zh) * | 2012-06-15 | 2015-05-27 | 西安交通大学 | 一种加热丝嵌入式硅基微热板及加工方法 |
DE102013212735B4 (de) | 2013-06-28 | 2021-07-22 | Robert Bosch Gmbh | Sensorbauteil für einen Gas- und/oder Flüssigkeitssensor, Herstellungsverfahren für ein Sensorbauteil für einen Gas- und/oder Flüssigkeitssensor und Verfahren zum Detektieren mindestens eines Stoffs in einem gasförmigen und/oder flüssigen Medium |
US9461190B2 (en) * | 2013-09-24 | 2016-10-04 | Optiz, Inc. | Low profile sensor package with cooling feature and method of making same |
KR101649586B1 (ko) * | 2014-04-07 | 2016-08-19 | 주식회사 모다이노칩 | 센서 |
DE102016112871A1 (de) * | 2015-07-31 | 2017-02-02 | Infineon Technologies Ag | Mikrofiltrationsvorrichtung |
DE102017122043A1 (de) * | 2017-09-22 | 2019-03-28 | Tdk Electronics Ag | MEMS-Gassensor |
KR102437764B1 (ko) * | 2017-12-20 | 2022-08-30 | 삼성전자주식회사 | 센서 패키지, 센서 패키지의 제조 방법, 및 리드 구조체의 제조 방법 |
DE102019201228B4 (de) * | 2019-01-31 | 2023-10-05 | Robert Bosch Gmbh | Verfahren zum Herstellen einer Mehrzahl von Sensoreinrichtungen und Sensoreinrichtung |
DE102020203868B4 (de) * | 2020-03-25 | 2022-04-28 | Vitesco Technologies GmbH | Gassensor für ein Fahrzeug |
EP4105650A1 (de) * | 2021-06-15 | 2022-12-21 | MEAS France | Sensorvorrichtung mit deckschicht |
SE545362C2 (en) * | 2021-12-22 | 2023-07-18 | Senseair Ab | Capped semiconductor based sensor and method for its fabrication |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3029153A1 (de) * | 1980-07-31 | 1982-03-04 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung einer gaspermeablen polymermembran fuer analysengeraete und nach diesem verfahrrn hergestellte membram |
US4472239A (en) * | 1981-10-09 | 1984-09-18 | Honeywell, Inc. | Method of making semiconductor device |
JPS61178653A (ja) * | 1985-02-04 | 1986-08-11 | Matsushita Electric Works Ltd | ガス検知素子用フイルタの製法 |
US4636767A (en) * | 1985-08-21 | 1987-01-13 | The United States Of America As Represented By The Secretary Of The Navy | Mixed semiconductor film device for monitoring gases |
US4592824A (en) * | 1985-09-13 | 1986-06-03 | Centre Suisse D'electronique Et De Microtechnique S.A. | Miniature liquid junction reference electrode and an integrated solid state electrochemical sensor including the same |
US4768070A (en) * | 1986-03-20 | 1988-08-30 | Hitachi, Ltd | Optoelectronics device |
US4671852A (en) * | 1986-05-07 | 1987-06-09 | The Standard Oil Company | Method of forming suspended gate, chemically sensitive field-effect transistor |
US4874500A (en) * | 1987-07-15 | 1989-10-17 | Sri International | Microelectrochemical sensor and sensor array |
US4801380A (en) * | 1987-12-23 | 1989-01-31 | The Texas A&M University System | Method of producing a silicon film with micropores |
GB8911607D0 (en) * | 1989-05-19 | 1989-07-05 | Emi Plc Thorn | A method of encapsulation for electronic devices and devices so encapsulated |
US5204690A (en) * | 1991-07-01 | 1993-04-20 | Xerox Corporation | Ink jet printhead having intergral silicon filter |
US5323051A (en) * | 1991-12-16 | 1994-06-21 | Motorola, Inc. | Semiconductor wafer level package |
NL9401260A (nl) * | 1993-11-12 | 1995-06-01 | Cornelis Johannes Maria Van Ri | Membraan voor microfiltratie, ultrafiltratie, gasscheiding en katalyse, werkwijze ter vervaardiging van een dergelijk membraan, mal ter vervaardiging van een dergelijk membraan, alsmede diverse scheidingssystemen omvattende een dergelijk membraan. |
JPH07140103A (ja) * | 1993-11-18 | 1995-06-02 | Seiko Epson Corp | 湿度センサ |
DE4439286C2 (de) * | 1994-11-07 | 2003-07-31 | Gerhard Reis | Mehrlagiger und randseitig gelagerter Membrankörper für die elektrochemische Meßzelle und Verfahren zu dessen Herstellung |
JPH0996622A (ja) * | 1995-09-29 | 1997-04-08 | Matsushita Electric Ind Co Ltd | ガスセンサおよびその製造方法 |
US5963782A (en) * | 1997-08-01 | 1999-10-05 | Motorola, Inc. | Semiconductor component and method of manufacture |
-
1996
- 1996-03-25 US US08/620,729 patent/US5798556A/en not_active Expired - Lifetime
-
1997
- 1997-03-19 DE DE69727001T patent/DE69727001T2/de not_active Expired - Lifetime
- 1997-03-19 EP EP97104659A patent/EP0798554B1/de not_active Expired - Lifetime
-
1998
- 1998-05-29 US US09/086,740 patent/US6326228B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0798554A3 (de) | 1997-10-15 |
EP0798554B1 (de) | 2004-01-02 |
US6326228B1 (en) | 2001-12-04 |
DE69727001T2 (de) | 2004-11-11 |
EP0798554A2 (de) | 1997-10-01 |
US5798556A (en) | 1998-08-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |