DE69733450D1 - Thermoelektrischer Halbleiter und Herstellungsverfahren dafür - Google Patents

Thermoelektrischer Halbleiter und Herstellungsverfahren dafür

Info

Publication number
DE69733450D1
DE69733450D1 DE69733450T DE69733450T DE69733450D1 DE 69733450 D1 DE69733450 D1 DE 69733450D1 DE 69733450 T DE69733450 T DE 69733450T DE 69733450 T DE69733450 T DE 69733450T DE 69733450 D1 DE69733450 D1 DE 69733450D1
Authority
DE
Germany
Prior art keywords
manufacturing
method therefor
thermoelectric semiconductor
thermoelectric
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69733450T
Other languages
English (en)
Inventor
Katsuhiro Tsuno
Tsuyoshi Tosho
Hideo Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ENGINEERING ADVANCEMENT ASS OF
Technova Inc
Original Assignee
ENGINEERING ADVANCEMENT ASS OF
Technova Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ENGINEERING ADVANCEMENT ASS OF, Technova Inc filed Critical ENGINEERING ADVANCEMENT ASS OF
Application granted granted Critical
Publication of DE69733450D1 publication Critical patent/DE69733450D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/81—Structural details of the junction
    • H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/93—Thermoelectric, e.g. peltier effect cooling
DE69733450T 1996-07-26 1997-07-25 Thermoelektrischer Halbleiter und Herstellungsverfahren dafür Expired - Fee Related DE69733450D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19779096A JP3459328B2 (ja) 1996-07-26 1996-07-26 熱電半導体およびその製造方法

Publications (1)

Publication Number Publication Date
DE69733450D1 true DE69733450D1 (de) 2005-07-14

Family

ID=16380401

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69733450T Expired - Fee Related DE69733450D1 (de) 1996-07-26 1997-07-25 Thermoelektrischer Halbleiter und Herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US5959341A (de)
EP (1) EP0821417B1 (de)
JP (1) JP3459328B2 (de)
CN (1) CN1155121C (de)
AU (1) AU729198B2 (de)
DE (1) DE69733450D1 (de)

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CN104646671B (zh) * 2015-01-04 2016-09-21 武汉理工大学 一种超快速制备Cu2Se基热电发电元器件的方法
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Also Published As

Publication number Publication date
CN1155121C (zh) 2004-06-23
EP0821417A3 (de) 1999-12-15
AU729198B2 (en) 2001-01-25
EP0821417A2 (de) 1998-01-28
CN1173742A (zh) 1998-02-18
US5959341A (en) 1999-09-28
US6172294B1 (en) 2001-01-09
AU3082197A (en) 1998-02-05
JPH1041553A (ja) 1998-02-13
EP0821417B1 (de) 2005-06-08
JP3459328B2 (ja) 2003-10-20

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