DE69735022D1 - Verfahren zur Herstellung einer Matrixanzeigevorrichtung - Google Patents

Verfahren zur Herstellung einer Matrixanzeigevorrichtung

Info

Publication number
DE69735022D1
DE69735022D1 DE69735022T DE69735022T DE69735022D1 DE 69735022 D1 DE69735022 D1 DE 69735022D1 DE 69735022 T DE69735022 T DE 69735022T DE 69735022 T DE69735022 T DE 69735022T DE 69735022 D1 DE69735022 D1 DE 69735022D1
Authority
DE
Germany
Prior art keywords
producing
display device
matrix display
matrix
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69735022T
Other languages
English (en)
Other versions
DE69735022T2 (de
Inventor
Mutsumi Kimura
Hiroshi Kiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of DE69735022D1 publication Critical patent/DE69735022D1/de
Publication of DE69735022T2 publication Critical patent/DE69735022T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133377Cells with plural compartments or having plurality of liquid crystal microcells partitioned by walls, e.g. one microcell per pixel
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1341Filling or closing of cells
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362Active matrix addressed cells
    • G02F1/136286Wiring, e.g. gate line, drain line
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • H10K59/173Passive-matrix OLED displays comprising banks or shadow masks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/12Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/13613Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit the semiconductor element being formed on a first substrate and thereafter transferred to the final cell substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/351Thickness
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/131Interconnections, e.g. wiring lines or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50Forming devices by joining two substrates together, e.g. lamination techniques
DE69735022T 1996-09-19 1997-09-18 Verfahren zur Herstellung einer Matrixanzeigevorrichtung Expired - Lifetime DE69735022T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP24808796 1996-09-19
JP24808796 1996-09-19

Publications (2)

Publication Number Publication Date
DE69735022D1 true DE69735022D1 (de) 2006-02-02
DE69735022T2 DE69735022T2 (de) 2006-08-10

Family

ID=17173021

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69735023T Expired - Lifetime DE69735023T2 (de) 1996-09-19 1997-09-18 Verfahren zur Herstellung einer Matrixanzeigevorrichtung
DE69733057T Expired - Lifetime DE69733057T2 (de) 1996-09-19 1997-09-18 Verfahren zur herstellung einer matrixanzeigevorrichtung
DE69735022T Expired - Lifetime DE69735022T2 (de) 1996-09-19 1997-09-18 Verfahren zur Herstellung einer Matrixanzeigevorrichtung

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69735023T Expired - Lifetime DE69735023T2 (de) 1996-09-19 1997-09-18 Verfahren zur Herstellung einer Matrixanzeigevorrichtung
DE69733057T Expired - Lifetime DE69733057T2 (de) 1996-09-19 1997-09-18 Verfahren zur herstellung einer matrixanzeigevorrichtung

Country Status (9)

Country Link
US (3) US20060210704A1 (de)
EP (4) EP1365443A3 (de)
JP (2) JP3786427B2 (de)
KR (4) KR100524284B1 (de)
CN (5) CN1882206A (de)
DE (3) DE69735023T2 (de)
HK (1) HK1017120A1 (de)
TW (1) TW438992B (de)
WO (1) WO1998012689A1 (de)

Families Citing this family (127)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1365443A3 (de) 1996-09-19 2004-11-17 Seiko Epson Corporation Matrixanzeigevorrichtung und ihr Herstellungsverfahren
JP3520396B2 (ja) 1997-07-02 2004-04-19 セイコーエプソン株式会社 アクティブマトリクス基板と表示装置
JP3803355B2 (ja) * 1997-08-21 2006-08-02 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
JP3803342B2 (ja) * 1997-08-21 2006-08-02 セイコーエプソン株式会社 有機半導体膜の形成方法、及びアクティブマトリクス基板の製造方法
JP3690406B2 (ja) * 1997-08-21 2005-08-31 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置
JP3729196B2 (ja) * 1997-08-21 2005-12-21 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置
JP3729195B2 (ja) * 1997-08-21 2005-12-21 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置及びその製造方法
EP1505648A3 (de) 1997-08-21 2005-08-10 Seiko Epson Corporation Anzeigevorrichtung mit aktiver Matrix
KR100608543B1 (ko) * 1998-03-17 2006-08-03 세이코 엡슨 가부시키가이샤 표시장치의 제조방법 및 박막발광소자의 제조방법
US20030148024A1 (en) * 2001-10-05 2003-08-07 Kodas Toivo T. Low viscosity precursor compositons and methods for the depositon of conductive electronic features
JP4258860B2 (ja) * 1998-09-04 2009-04-30 セイコーエプソン株式会社 光伝達手段を備えた装置
US6221438B1 (en) * 1998-11-03 2001-04-24 Sarnoff Corporation Patterned deposition of a material
JP3900724B2 (ja) * 1999-01-11 2007-04-04 セイコーエプソン株式会社 有機el素子の製造方法および有機el表示装置
EP1031873A3 (de) * 1999-02-23 2005-02-23 Sel Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement und Verfahren zu dessen Herstellung
JP4524810B2 (ja) * 1999-04-12 2010-08-18 カシオ計算機株式会社 有機el装置
JP2000323276A (ja) * 1999-05-14 2000-11-24 Seiko Epson Corp 有機el素子の製造方法、有機el素子およびインク組成物
JP4515469B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
JP4515349B2 (ja) * 1999-06-04 2010-07-28 株式会社半導体エネルギー研究所 電気光学装置
JP4094437B2 (ja) * 1999-06-04 2008-06-04 株式会社半導体エネルギー研究所 電気光学装置の作製方法
US7288420B1 (en) 1999-06-04 2007-10-30 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing an electro-optical device
JP2001052864A (ja) * 1999-06-04 2001-02-23 Semiconductor Energy Lab Co Ltd 電気光学装置の作製方法
TW512543B (en) 1999-06-28 2002-12-01 Semiconductor Energy Lab Method of manufacturing an electro-optical device
JP2001085162A (ja) * 1999-09-10 2001-03-30 Sharp Corp 有機発光素子及びその製造方法
JP2001110575A (ja) 1999-10-04 2001-04-20 Sanyo Electric Co Ltd エレクトロルミネッセンス表示装置
JP4780826B2 (ja) * 1999-10-12 2011-09-28 株式会社半導体エネルギー研究所 電気光学装置の作製方法
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW480722B (en) 1999-10-12 2002-03-21 Semiconductor Energy Lab Manufacturing method of electro-optical device
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
JP2001126867A (ja) * 1999-10-26 2001-05-11 Seiko Epson Corp 表示装置の製造方法
US6580094B1 (en) * 1999-10-29 2003-06-17 Semiconductor Energy Laboratory Co., Ltd. Electro luminescence display device
JP2003515909A (ja) * 1999-11-29 2003-05-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機エレクトロルミネッセント装置とその製造方法
TW465122B (en) 1999-12-15 2001-11-21 Semiconductor Energy Lab Light-emitting device
JP4533489B2 (ja) * 2000-01-28 2010-09-01 大日本印刷株式会社 画像表示媒体およびその製造方法
US6559594B2 (en) 2000-02-03 2003-05-06 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device
TW495808B (en) 2000-02-04 2002-07-21 Semiconductor Energy Lab Thin film formation apparatus and method of manufacturing self-light-emitting device using thin film formation apparatus
JP2001230077A (ja) * 2000-02-18 2001-08-24 Dainippon Printing Co Ltd エレクトロルミネッセンス素子の製造方法
JP4831873B2 (ja) * 2000-02-22 2011-12-07 株式会社半導体エネルギー研究所 自発光装置及びその作製方法
TW525305B (en) * 2000-02-22 2003-03-21 Semiconductor Energy Lab Self-light-emitting device and method of manufacturing the same
KR20010085420A (ko) 2000-02-23 2001-09-07 기타지마 요시토시 전계발광소자와 그 제조방법
JP4601842B2 (ja) * 2000-02-28 2010-12-22 株式会社半導体エネルギー研究所 薄膜形成方法
JP4637391B2 (ja) * 2000-03-27 2011-02-23 株式会社半導体エネルギー研究所 発光装置の作製方法
TW521226B (en) * 2000-03-27 2003-02-21 Semiconductor Energy Lab Electro-optical device
JP4618918B2 (ja) * 2000-03-27 2011-01-26 株式会社半導体エネルギー研究所 自発光装置の作製方法
JP4637390B2 (ja) * 2000-03-27 2011-02-23 株式会社半導体エネルギー研究所 発光装置の作製方法
WO2001074121A1 (fr) 2000-03-31 2001-10-04 Seiko Epson Corporation Dispositif electroluminescent organique et procede de fabrication
JP4048687B2 (ja) * 2000-04-07 2008-02-20 セイコーエプソン株式会社 有機el素子および有機el素子の製造方法
KR100649722B1 (ko) 2000-04-21 2006-11-24 엘지.필립스 엘시디 주식회사 일렉트로루미네센스 표시소자의 패터닝장치 및 이를이용한 패터닝방법
US6356031B1 (en) * 2000-05-03 2002-03-12 Time Warner Entertainment Co, Lp Electroluminescent plastic devices with an integral thin film solar cell
JP4713010B2 (ja) * 2000-05-08 2011-06-29 株式会社半導体エネルギー研究所 発光装置及びその作製方法
JP4860052B2 (ja) * 2000-05-12 2012-01-25 株式会社半導体エネルギー研究所 発光装置
JP2002083689A (ja) * 2000-06-29 2002-03-22 Semiconductor Energy Lab Co Ltd 発光装置
JP2002015866A (ja) * 2000-06-30 2002-01-18 Seiko Epson Corp 有機el表示体の製造方法
JP3943900B2 (ja) * 2000-11-09 2007-07-11 株式会社東芝 自己発光型表示装置
US6980272B1 (en) 2000-11-21 2005-12-27 Sarnoff Corporation Electrode structure which supports self alignment of liquid deposition of materials
JP3628997B2 (ja) 2000-11-27 2005-03-16 セイコーエプソン株式会社 有機エレクトロルミネッセンス装置の製造方法
CN1905126A (zh) * 2000-11-27 2007-01-31 精工爱普生株式会社 有机电致发光装置及其电子装置
SG143942A1 (en) 2001-02-19 2008-07-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2002373781A (ja) * 2001-03-29 2002-12-26 Hitachi Ltd 有機el表示体、及びカラーフィルターの製造装置
JP3599047B2 (ja) 2001-06-25 2004-12-08 セイコーエプソン株式会社 カラーフィルタおよびその製造方法、カラーフィルタ用液滴材料着弾精度試験基板、液滴材料着弾精度の測定方法、電気光学装置、ならびに電子機器
JP4766218B2 (ja) * 2001-07-09 2011-09-07 セイコーエプソン株式会社 有機elアレイ露光ヘッドとその作製方法及びそれを用いた画像形成装置
US6845016B2 (en) * 2001-09-13 2005-01-18 Seiko Epson Corporation Electronic device and method of manufacturing the same, and electronic instrument
JP3705264B2 (ja) 2001-12-18 2005-10-12 セイコーエプソン株式会社 表示装置及び電子機器
US7109653B2 (en) * 2002-01-15 2006-09-19 Seiko Epson Corporation Sealing structure with barrier membrane for electronic element, display device, electronic apparatus, and fabrication method for electronic element
CN101673508B (zh) * 2002-01-18 2013-01-09 株式会社半导体能源研究所 发光器件
WO2003065474A1 (en) * 2002-02-01 2003-08-07 Koninklijke Philips Electronics N.V. Structured polmer substrate for ink-jet printing of an oled matrix
CN101336022A (zh) * 2002-02-12 2008-12-31 出光兴产株式会社 有机el显示装置及其制造方法
JP3951750B2 (ja) * 2002-03-07 2007-08-01 セイコーエプソン株式会社 物質充填方法、膜形成方法、デバイスおよびデバイスの製造方法
EP1488456B1 (de) * 2002-03-20 2013-01-16 TPO Hong Kong Holding Limited Aktivmatrix-anzeigeeinrichtung und ihre herstellung
CN1293631C (zh) * 2002-03-20 2007-01-03 皇家飞利浦电子股份有限公司 有源矩阵电致发光显示装置及其制造
GB0216053D0 (en) * 2002-03-20 2002-08-21 Koninkl Philips Electronics Nv Active matrix electroluminescent display devices and their manufacture
GB0216058D0 (en) * 2002-03-20 2002-08-21 Koninkl Philips Electronics Nv Active matrix electroluminscent display devices and their manufacture
GB0216055D0 (en) * 2002-03-20 2002-08-21 Koninkl Philips Electronics Nv Active matrix electroluminescent display devices and their manufacture
GB0216057D0 (en) * 2002-03-20 2002-08-21 Koninkl Philips Electronics Nv Active matrix display devices and their manufacture
US7488972B2 (en) * 2002-04-26 2009-02-10 Sanyo Electric Co., Ltd. Organic luminescent display device having a semiconductor with an amorphous silicon layer
US7242441B2 (en) * 2002-06-10 2007-07-10 Seiko Epson Corporation Method for manufacturing electro-optical device, and electro-optical device and electronic device manufactured with this manufacturing method
US6858464B2 (en) 2002-06-19 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing light emitting device
JP2004055159A (ja) * 2002-07-16 2004-02-19 Dainippon Screen Mfg Co Ltd 有機el素子の製造方法および有機el表示装置
JP2004127933A (ja) * 2002-09-11 2004-04-22 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
KR101061882B1 (ko) * 2002-09-11 2011-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광장치 및 그의 제조방법
JP3719431B2 (ja) 2002-09-25 2005-11-24 セイコーエプソン株式会社 光学部品およびその製造方法、表示装置および撮像素子
CN100544533C (zh) 2002-11-11 2009-09-23 株式会社半导体能源研究所 发光装置的制造方法
KR100521272B1 (ko) 2002-12-20 2005-10-12 삼성에스디아이 주식회사 휘도가 개선된 유기전계 발광표시장치
JP4151420B2 (ja) 2003-01-23 2008-09-17 セイコーエプソン株式会社 デバイスの製造方法
JP4251080B2 (ja) 2003-04-15 2009-04-08 セイコーエプソン株式会社 膜形成方法、電子装置の製造方法、膜形成装置及び電子装置、電子機器
JP3823981B2 (ja) * 2003-05-12 2006-09-20 セイコーエプソン株式会社 パターンと配線パターン形成方法、デバイスとその製造方法、電気光学装置、電子機器及びアクティブマトリクス基板の製造方法
JP4239873B2 (ja) 2003-05-19 2009-03-18 セイコーエプソン株式会社 電気光学装置および電子機器
JP4389480B2 (ja) 2003-05-28 2009-12-24 セイコーエプソン株式会社 振動子の支持機構及び振動子ユニット
DE10324880B4 (de) * 2003-05-30 2007-04-05 Schott Ag Verfahren zur Herstellung von OLEDs
JP4858682B2 (ja) * 2003-06-04 2012-01-18 日本ゼオン株式会社 基板の製造方法
JP4507513B2 (ja) * 2003-06-20 2010-07-21 コニカミノルタエムジー株式会社 有機薄膜トランジスタの製造方法
US7917941B2 (en) 2003-09-22 2011-03-29 International Business Machines Corporation System and method for providing physical web security using IP addresses
JP4686967B2 (ja) * 2003-10-14 2011-05-25 セイコーエプソン株式会社 光素子の製造方法
GB0325747D0 (en) * 2003-11-05 2003-12-10 Koninkl Philips Electronics Nv Active matrix display device and method of producing the same
JP3915806B2 (ja) 2003-11-11 2007-05-16 セイコーエプソン株式会社 電気光学装置および電子機器
EP1692733B1 (de) * 2003-12-03 2009-06-10 Philips Intellectual Property & Standards GmbH Display mit einer reflektierenden isolierenden trennschicht
US7586171B2 (en) * 2004-04-14 2009-09-08 Yong Cao Organic electronic device comprising conductive members and processes for forming and using the organic electronic device
JP2006081985A (ja) * 2004-09-15 2006-03-30 Seiko Epson Corp パターン形成方法、電子機器の製造方法、および基体の製造方法
JP4151652B2 (ja) * 2005-01-11 2008-09-17 セイコーエプソン株式会社 識別コード描画方法
JP4752303B2 (ja) * 2005-03-29 2011-08-17 セイコーエプソン株式会社 El装置の製造方法、el装置、電子機器
JP4876415B2 (ja) * 2005-03-29 2012-02-15 セイコーエプソン株式会社 有機el装置の製造方法、デバイスの製造方法
KR101124502B1 (ko) * 2005-05-18 2012-03-15 삼성전자주식회사 컬러필터 및 그 제조방법
EP1775780A1 (de) 2005-10-14 2007-04-18 STMicroelectronics S.r.l. Organische elektrolumineszente Vorrichtung und Verfahren zu deren Herstellung
KR100707601B1 (ko) * 2005-10-18 2007-04-13 삼성에스디아이 주식회사 유기 발광표시장치 및 그 제조방법
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
US7731377B2 (en) * 2006-03-21 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Backlight device and display device
KR100770267B1 (ko) * 2006-05-04 2007-10-25 삼성에스디아이 주식회사 유기전계발광소자
DE102006052029B4 (de) * 2006-09-22 2020-01-09 Osram Oled Gmbh Lichtemittierende Vorrichtung
JP2008078011A (ja) * 2006-09-22 2008-04-03 Seiko Epson Corp 発光装置および電子機器
US8884322B2 (en) 2006-09-22 2014-11-11 Osram Opto Semiconductor Gmbh Light-emitting device
JP5343330B2 (ja) * 2007-06-28 2013-11-13 住友化学株式会社 薄膜形成方法、有機エレクトロルミネッセンス素子の製造方法、半導体素子の製造方法及び光学素子の製造方法
JP2010010235A (ja) * 2008-06-25 2010-01-14 Hitachi Ltd 有機発光表示装置
US8536611B2 (en) 2008-06-17 2013-09-17 Hitachi, Ltd. Organic light-emitting element, method for manufacturing the organic light-emitting element, apparatus for manufacturing the organic light-emitting element, and organic light-emitting device using the organic light-emitting element
JP5212405B2 (ja) * 2010-03-04 2013-06-19 カシオ計算機株式会社 ディスプレイパネル
KR101805923B1 (ko) * 2011-08-04 2017-12-08 엘지디스플레이 주식회사 터치센서 일체형 표시장치
US9589852B2 (en) * 2013-07-22 2017-03-07 Cree, Inc. Electrostatic phosphor coating systems and methods for light emitting structures and packaged light emitting diodes including phosphor coating
CN104238217B (zh) 2014-09-05 2017-03-01 深圳市华星光电技术有限公司 一种抗色偏显示面板
CN104299968B (zh) * 2014-09-22 2017-04-26 京东方科技集团股份有限公司 电致发光器件及其制造方法、显示基板和显示装置
JP6528517B2 (ja) 2015-04-06 2019-06-12 三菱電機株式会社 配向膜の塗布方法
CN105789484B (zh) * 2016-03-09 2018-05-15 纳晶科技股份有限公司 发光器件及其制作方法
CN106601779A (zh) 2016-12-29 2017-04-26 深圳市华星光电技术有限公司 Oled基板及其制作方法
CN108630829B (zh) * 2017-03-17 2019-11-08 京东方科技集团股份有限公司 显示面板的制作方法、显示面板及显示装置
KR102525822B1 (ko) 2017-07-06 2023-04-26 삼성디스플레이 주식회사 표시 소자 및 그 제조 방법
KR102486552B1 (ko) 2018-01-15 2023-01-10 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
CN114953744B (zh) * 2018-03-22 2023-08-04 柯尼卡美能达株式会社 喷墨头及其制造方法
US11264437B2 (en) 2018-05-14 2022-03-01 Samsung Display Co., Ltd. Display devices
KR20200114811A (ko) * 2019-03-29 2020-10-07 삼성전자주식회사 디스플레이 모듈 및 디스플레이 모듈의 제조 방법
CN110632796B (zh) * 2019-09-27 2022-06-28 京东方科技集团股份有限公司 一种背板、背光模组、显示装置及背板的制备方法

Family Cites Families (131)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3792308A (en) * 1970-06-08 1974-02-12 Matsushita Electric Ind Co Ltd Electrophoretic display device of the luminescent type
US3792309A (en) * 1972-08-30 1974-02-12 Multi Electric Mfg Inc Strobe light intensity control
US3863332A (en) * 1973-06-28 1975-02-04 Hughes Aircraft Co Method of fabricating back panel for liquid crystal display
US3956032A (en) * 1974-09-24 1976-05-11 The United States Of America As Represented By The United States National Aeronautics And Space Administration Process for fabricating SiC semiconductor devices
US4042854A (en) * 1975-11-21 1977-08-16 Westinghouse Electric Corporation Flat panel display device with integral thin film transistor control system
US4007462A (en) * 1975-12-24 1977-02-08 Recognition Equipment Incorporated Light absorption printing process
DE2815485A1 (de) 1978-04-10 1979-10-18 Messer Griesheim Gmbh Verfahren und vorrichtung zum verzinken von draht
US4499149A (en) * 1980-12-15 1985-02-12 M&T Chemicals Inc. Siloxane-containing polymers
US4569305A (en) * 1981-10-09 1986-02-11 Ferco S.R.L. Apparatus to provide the application of glue on preselected zones of printed circuit boards
JPS5975205A (ja) * 1982-10-25 1984-04-27 Seiko Epson Corp カラ−フイルタの製造方法
US4792817A (en) * 1983-08-29 1988-12-20 Diagraph Corporation Ink jet printing systems
US4683146A (en) * 1984-04-16 1987-07-28 Canon Kabushiki Kaisha Process for producing deposition films
US4687352A (en) * 1984-12-29 1987-08-18 Brother Kogyo Kabushiki Kaisha Printer with an image reader
EP0218117A3 (de) 1985-10-11 1989-11-23 Allied Corporation Polycyclosilazanpolymere und ihre Verwendung als dielektrische Filme in integrierten Schaltkreisen
US4891110A (en) * 1986-11-10 1990-01-02 Zenith Electronics Corporation Cataphoretic process for screening color cathode ray tubes
JPS63186216A (ja) * 1987-01-28 1988-08-01 Nec Corp アクテイブマトリツクス液晶表示器
JPH01140188A (ja) * 1987-11-26 1989-06-01 Komatsu Ltd 薄膜el表示パネル
JP2653099B2 (ja) * 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル,投写型表示装置及びビューファインダー
US5132248A (en) * 1988-05-31 1992-07-21 The United States Of America As Represented By The United States Department Of Energy Direct write with microelectronic circuit fabrication
US5200051A (en) 1988-11-14 1993-04-06 I-Stat Corporation Wholly microfabricated biosensors and process for the manufacture and use thereof
GB8909011D0 (en) * 1989-04-20 1989-06-07 Friend Richard H Electroluminescent devices
US5705302A (en) 1989-04-28 1998-01-06 Seiko Epson Corporation Color filter for liquid crystal display device and method for producing the color filter
US5246782A (en) 1990-12-10 1993-09-21 The Dow Chemical Company Laminates of polymers having perfluorocyclobutane rings and polymers containing perfluorocyclobutane rings
JPH0333824A (ja) * 1989-06-30 1991-02-14 Idemitsu Kosan Co Ltd 液晶材料の製膜方法
JP2807510B2 (ja) * 1989-11-29 1998-10-08 大日本印刷株式会社 転写シート及び液晶表示素子の製造方法
US5066512A (en) * 1989-12-08 1991-11-19 International Business Machines Corporation Electrostatic deposition of lcd color filters
JPH03192334A (ja) * 1989-12-22 1991-08-22 Matsushita Electric Ind Co Ltd 液晶表示パネル
DE69110922T2 (de) * 1990-02-23 1995-12-07 Sumitomo Chemical Co Organisch elektrolumineszente Vorrichtung.
JP3069139B2 (ja) * 1990-03-16 2000-07-24 旭化成工業株式会社 分散型電界発光素子
US5326692B1 (en) * 1992-05-13 1996-04-30 Molecular Probes Inc Fluorescent microparticles with controllable enhanced stokes shift
US5041190A (en) * 1990-05-16 1991-08-20 Xerox Corporation Method of fabricating channel plates and ink jet printheads containing channel plates
JP2911552B2 (ja) * 1990-06-18 1999-06-23 パイオニア株式会社 有機電界発光素子及びその製造方法
JP2717454B2 (ja) * 1990-07-16 1998-02-18 日本石油株式会社 有機薄膜エレクトロルミネッセンス素子
US5250439A (en) * 1990-07-19 1993-10-05 Miles Inc. Use of conductive sensors in diagnostic assays
US5202261A (en) * 1990-07-19 1993-04-13 Miles Inc. Conductive sensors and their use in diagnostic assays
GB9018698D0 (en) * 1990-08-24 1990-10-10 Lynxvale Ltd Semiconductive copolymers for use in electroluminescent devices
JPH04123007A (ja) * 1990-09-14 1992-04-23 Toray Ind Inc カラーフィルタ製造方法
US5477352A (en) * 1990-10-31 1995-12-19 Sharp Kaushiki Kaisha Liquid crystal display device with liquid crystal dispersed or impregnated in a perfluoro-type polymer of perfluoroalkyl acrylate or methacrylate
US5347154A (en) * 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
US5206749A (en) * 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
AU2250392A (en) * 1991-06-12 1993-01-12 Case Western Reserve University Process for the controlled growth of single-crystal films of silicon carbide polytypes on silicon carbide wafers
KR930005559B1 (ko) * 1991-06-14 1993-06-23 삼성전관 주식회사 평판 디스플레이 장치
KR940000143B1 (ko) * 1991-06-25 1994-01-07 재단법인 한국전자통신연구소 대형 박막 트랜지스터(TFT) 액정 디스플레이 패널(LCD panel)의 제조방법
US5214350A (en) * 1991-09-11 1993-05-25 Zenith Electronics Identification of image displays and their component parts
US5276380A (en) * 1991-12-30 1994-01-04 Eastman Kodak Company Organic electroluminescent image display device
US5294870A (en) * 1991-12-30 1994-03-15 Eastman Kodak Company Organic electroluminescent multicolor image display device
JP2823725B2 (ja) 1992-01-18 1998-11-11 シャープ株式会社 カラー薄膜elパネル
US5517037A (en) 1992-03-25 1996-05-14 Kanegafuchi Chemical Industry Co., Ltd. Polysilicon thin film with a particulate product of SiOx
JP2781492B2 (ja) * 1992-04-01 1998-07-30 シャープ株式会社 カラー・エレクトロ・ルミネッセンス・ディスプレイ装置
DE4212501C1 (en) 1992-04-14 1993-08-05 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 8000 Muenchen, De Deposition of silicon nitride polymer layer on substrate - using linear or cyclic silazane in gas, giving good quality and high coating ratio
US5439519A (en) * 1992-04-28 1995-08-08 Tokyo Ohka Kogyo Co., Ltd. Solution applying apparatus
EP0905544B1 (de) * 1992-06-01 2003-05-21 LG.Philips LCD Co., Ltd. Herstellungverfahren einer Flüssigkristallanzeige
JP2964780B2 (ja) * 1992-06-10 1999-10-18 富士ゼロックス株式会社 配向性多層強誘電体薄膜およびその作製方法
US5997122A (en) * 1992-06-30 1999-12-07 Canon Kabushiki Kaisha Ink jet recording apparatus capable of performing liquid droplet diameter random variable recording and ink jet recording method using ink for liquid droplet random variable recording
GB9215929D0 (en) * 1992-07-27 1992-09-09 Cambridge Display Tech Ltd Electroluminescent devices
US5510066A (en) * 1992-08-14 1996-04-23 Guild Associates, Inc. Method for free-formation of a free-standing, three-dimensional body
US5652067A (en) * 1992-09-10 1997-07-29 Toppan Printing Co., Ltd. Organic electroluminescent device
EP0659282B1 (de) * 1992-09-11 1998-11-25 Kopin Corporation Farbfiltersystem fuer anzeigetafeln
JP3033067B2 (ja) * 1992-10-05 2000-04-17 富士ゼロックス株式会社 多層強誘電体導膜の製造方法
JP2577111Y2 (ja) * 1992-11-17 1998-07-23 日本エー・エム・ピー株式会社 テンプレート
KR100294194B1 (ko) * 1993-02-05 2001-09-17 김순택 액정표시소자
JPH06281917A (ja) * 1993-03-29 1994-10-07 Dainippon Printing Co Ltd 高分子分散型液晶表示装置及びその製造方法
JP3098651B2 (ja) * 1993-03-31 2000-10-16 松下電器産業株式会社 高分子電気デバイス
JP2991270B2 (ja) * 1993-04-26 1999-12-20 キヤノン株式会社 カラーフィルターの製造方法
JP3724592B2 (ja) * 1993-07-26 2005-12-07 ハイニックス セミコンダクター アメリカ インコーポレイテッド 半導体基板の平坦化方法
JP2790163B2 (ja) * 1993-07-29 1998-08-27 富士通株式会社 シリコン酸化膜の形成方法、半導体装置の製造方法及びフラットディスプレイ装置の製造方法
JP2814049B2 (ja) * 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3534445B2 (ja) * 1993-09-09 2004-06-07 隆一 山本 ポリチオフェンを用いたel素子
US5410806A (en) * 1993-09-15 1995-05-02 Lsi Logic Corporation Method for fabricating conductive epoxy grid array semiconductors packages
US5340619A (en) * 1993-10-18 1994-08-23 Brewer Science, Inc. Method of manufacturing a color filter array
JPH07134288A (ja) * 1993-11-10 1995-05-23 Dainippon Printing Co Ltd 液晶光学素子及びその製造方法
TW417034B (en) * 1993-11-24 2001-01-01 Canon Kk Color filter, method for manufacturing it, and liquid crystal panel
JP2860869B2 (ja) 1993-12-02 1999-02-24 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3017912B2 (ja) * 1993-12-13 2000-03-13 シャープ株式会社 液晶表示装置用電極基板及び液晶表示装置
JP2952143B2 (ja) * 1993-12-21 1999-09-20 キヤノン株式会社 カラーフィルタの製造方法
US5536603A (en) 1993-12-21 1996-07-16 Kabushiki Kaisha Toshiba Phase shift mask and method of fabricating the same
JP3463362B2 (ja) * 1993-12-28 2003-11-05 カシオ計算機株式会社 電界発光素子の製造方法および電界発光素子
US5399390A (en) * 1994-01-27 1995-03-21 Motorola, Inc. Liquid crystal display with polymeric substrate
EP0665449B1 (de) * 1994-01-28 2001-10-24 Canon Kabushiki Kaisha Farbfilter, Verfahren zu seiner Herstellung, und Flüssigkristalltafel
JP3813217B2 (ja) * 1995-03-13 2006-08-23 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルの製造方法
AUPM483294A0 (en) * 1994-03-31 1994-04-28 Chulalongkorn University Amorphous semiconductor thin film light emitting diode
MY114271A (en) * 1994-05-12 2002-09-30 Casio Computer Co Ltd Reflection type color liquid crystal display device
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
JPH0836169A (ja) * 1994-07-25 1996-02-06 Sharp Corp 液晶表示装置およびその製造方法
JP3517975B2 (ja) * 1994-08-12 2004-04-12 ソニー株式会社 液晶表示装置及びその製造方法
US5935331A (en) * 1994-09-09 1999-08-10 Matsushita Electric Industrial Co., Ltd. Apparatus and method for forming films
US5665857A (en) * 1994-09-12 1997-09-09 Motorola Conjugated polymer with built-in fluorescent centers and method of manufacture
JPH08122768A (ja) * 1994-10-19 1996-05-17 Sony Corp 表示装置
JP3431700B2 (ja) * 1994-11-14 2003-07-28 理想科学工業株式会社 孔版印刷用原紙の製版方法及び製版装置
US5550066A (en) * 1994-12-14 1996-08-27 Eastman Kodak Company Method of fabricating a TFT-EL pixel
US5929464A (en) * 1995-01-20 1999-07-27 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-optical device
US5610932A (en) * 1995-01-25 1997-03-11 Physical Sciences, Inc. Solid state dye laser host
JP3684603B2 (ja) 1995-01-26 2005-08-17 松下電器産業株式会社 プラズマディスプレイパネルの製造方法
JP3208638B2 (ja) * 1995-01-31 2001-09-17 双葉電子工業株式会社 有機エレクトロルミネセント表示装置およびその製造方法
US5804917A (en) * 1995-01-31 1998-09-08 Futaba Denshi Kogyo K.K. Organic electroluminescent display device and method for manufacturing same
TW334474B (en) * 1995-02-01 1998-06-21 Sumitomo Kagaku Kk Method for making a polymeric fluorescent substrate and organic electrolumninescent element
WO1996025020A1 (fr) * 1995-02-06 1996-08-15 Idemitsu Kosan Co., Ltd. Dispositif emetteur de lumiere en plusieurs couleurs et procede de production de ce dispositif
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3401356B2 (ja) * 1995-02-21 2003-04-28 パイオニア株式会社 有機エレクトロルミネッセンスディスプレイパネルとその製造方法
US5663573A (en) * 1995-03-17 1997-09-02 The Ohio State University Bipolar electroluminescent device
US5771562A (en) * 1995-05-02 1998-06-30 Motorola, Inc. Passivation of organic devices
KR100303134B1 (ko) * 1995-05-09 2002-11-23 엘지.필립스 엘시디 주식회사 액정표시소자및그제조방법.
JPH08325564A (ja) 1995-06-05 1996-12-10 Nec Corp 有機薄膜el素子
TW477905B (en) * 1995-06-14 2002-03-01 Hitachi Ltd Liquid crystal display device formed of high resistance black matrix with wide view angle
JP3124722B2 (ja) 1995-07-31 2001-01-15 キヤノン株式会社 カラーフィルタの製造方法及び製造装置及びカラーフィルタの区画された領域間の混色の低減方法及びカラーフィルタの区画された領域へのインク付与位置の精度向上方法及びカラーフィルタの区画された領域の着色ムラ低減方法
US5593788A (en) * 1996-04-25 1997-01-14 Eastman Kodak Company Organic electroluminescent devices with high operational stability
US5652019A (en) * 1995-10-10 1997-07-29 Rockwell International Corporation Method for producing resistive gradients on substrates and articles produced thereby
JPH09123513A (ja) * 1995-11-06 1997-05-13 Fuji Xerox Co Ltd 導電性高分子薄膜及びその製造方法、導電性高分子薄 膜の駆動方法並びに画像形成方法及び画像形成装置
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US6195142B1 (en) * 1995-12-28 2001-02-27 Matsushita Electrical Industrial Company, Ltd. Organic electroluminescence element, its manufacturing method, and display device using organic electroluminescence element
DE69724107T2 (de) * 1996-03-04 2004-06-24 DuPont Displays, Inc., Santa Barbara Polyfluorene als materialien für photolumineszenz und elektrolumineszenz
EP1445793A3 (de) * 1996-05-15 2004-09-01 Seiko Epson Corporation Beschichtete Dünnfilmanordnung, Flüssigkristallanzeigetafel und elektronische Vorrichtung, und Herstellungsverfahren der Dünnfilmanordnung
US5779799A (en) * 1996-06-21 1998-07-14 Micron Technology, Inc. Substrate coating apparatus
US5824374A (en) * 1996-07-22 1998-10-20 Optical Coating Laboratory, Inc. In-situ laser patterning of thin film layers during sequential depositing
US6104311A (en) * 1996-08-26 2000-08-15 Addison Technologies Information storage and identification tag
EP1365443A3 (de) 1996-09-19 2004-11-17 Seiko Epson Corporation Matrixanzeigevorrichtung und ihr Herstellungsverfahren
US5874200A (en) 1996-10-15 1999-02-23 Daewoo Electronics Co., Ltd. Method for forming a pattern preventing water mark formation
US6187457B1 (en) * 1996-11-27 2001-02-13 Tdk Corporation Organic EL element and method of producing the same
US6013982A (en) * 1996-12-23 2000-01-11 The Trustees Of Princeton University Multicolor display devices
GB9701680D0 (en) * 1997-01-28 1997-03-19 Cambridge Display Tech Ltd Viscosity modification of precursor solutions
US5972419A (en) * 1997-06-13 1999-10-26 Hewlett-Packard Company Electroluminescent display and method for making the same
GB9718516D0 (en) * 1997-09-01 1997-11-05 Cambridge Display Tech Ltd Methods of Increasing the Efficiency of Organic Electroluminescent Devices
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
DE69917388T2 (de) * 1998-02-18 2005-05-25 Seiko Epson Corp. Verfahren zur herstellung eines vielschichtspiegels mit verteilter reflektion
JP3646510B2 (ja) 1998-03-18 2005-05-11 セイコーエプソン株式会社 薄膜形成方法、表示装置およびカラーフィルタ
US6137221A (en) * 1998-07-08 2000-10-24 Agilent Technologies, Inc. Organic electroluminescent device with full color characteristics
JP4434411B2 (ja) * 2000-02-16 2010-03-17 出光興産株式会社 アクティブ駆動型有機el発光装置およびその製造方法
TW490997B (en) * 2000-03-31 2002-06-11 Seiko Epson Corp Method of manufacturing organic EL element, and organic EL element
JP3815269B2 (ja) * 2000-07-07 2006-08-30 セイコーエプソン株式会社 有機el表示体及びその製造方法、孔開き基板、電気光学装置及びその製造方法、並びに電子機器
AU2001235796A1 (en) 2000-08-30 2002-03-13 Cambridge Display Technology Limited A formulation for depositing a conjugated polymer layer
KR20030095955A (ko) * 2001-04-26 2003-12-24 코닌클리케 필립스 일렉트로닉스 엔.브이. 유기 전자발광 디바이스 및 그 제조 방법

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US20090053396A1 (en) 2009-02-26
CN1901159A (zh) 2007-01-24
CN100403355C (zh) 2008-07-16
CN1480913A (zh) 2004-03-10
DE69735023T2 (de) 2006-08-17
WO1998012689A1 (fr) 1998-03-26
EP1365443A3 (de) 2004-11-17
US20100173450A1 (en) 2010-07-08
EP1365276B1 (de) 2005-12-28
EP1365443A2 (de) 2003-11-26
EP0862156A4 (de) 2000-09-27
DE69735022T2 (de) 2006-08-10
EP1367431B1 (de) 2005-12-28
JP3786427B2 (ja) 2006-06-14
KR20050010961A (ko) 2005-01-28
TW438992B (en) 2001-06-07
EP1365276A3 (de) 2004-01-21
CN1205096A (zh) 1999-01-13
KR19990067364A (ko) 1999-08-16
EP0862156B1 (de) 2005-04-20
KR100477153B1 (ko) 2005-08-01
JP2008210808A (ja) 2008-09-11
US8431182B2 (en) 2013-04-30
HK1017120A1 (en) 1999-11-12
US8580333B2 (en) 2013-11-12
KR100572238B1 (ko) 2006-04-24
US20060210704A1 (en) 2006-09-21
EP1365276A2 (de) 2003-11-26
CN100485904C (zh) 2009-05-06
CN1516528A (zh) 2004-07-28
KR20050008842A (ko) 2005-01-21
DE69733057D1 (de) 2005-05-25
EP1367431A3 (de) 2004-01-21
EP0862156A1 (de) 1998-09-02
KR20050008841A (ko) 2005-01-21
KR100524284B1 (ko) 2005-10-28
CN1882206A (zh) 2006-12-20
EP1367431A2 (de) 2003-12-03
CN100481560C (zh) 2009-04-22
DE69735023D1 (de) 2006-02-02
KR100525642B1 (ko) 2005-11-02
CN1173315C (zh) 2004-10-27

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