DE69736816D1 - Verfahren zur herstellung eines kondensators - Google Patents

Verfahren zur herstellung eines kondensators

Info

Publication number
DE69736816D1
DE69736816D1 DE69736816T DE69736816T DE69736816D1 DE 69736816 D1 DE69736816 D1 DE 69736816D1 DE 69736816 T DE69736816 T DE 69736816T DE 69736816 T DE69736816 T DE 69736816T DE 69736816 D1 DE69736816 D1 DE 69736816D1
Authority
DE
Germany
Prior art keywords
capacitor
plate
forming
over
sidewall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69736816T
Other languages
English (en)
Other versions
DE69736816T2 (de
Inventor
M Graettinger
J Schuele
Brent Mcclure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69736816D1 publication Critical patent/DE69736816D1/de
Publication of DE69736816T2 publication Critical patent/DE69736816T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
DE69736816T 1996-06-26 1997-06-23 Verfahren zur herstellung eines kondensators Expired - Lifetime DE69736816T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US670644 1996-06-26
US08/670,644 US5843830A (en) 1996-06-26 1996-06-26 Capacitor, and methods for forming a capacitor
PCT/US1997/010574 WO1997050116A1 (en) 1996-06-26 1997-06-23 A capacitor and methods of forming a capacitor

Publications (2)

Publication Number Publication Date
DE69736816D1 true DE69736816D1 (de) 2006-11-23
DE69736816T2 DE69736816T2 (de) 2007-08-09

Family

ID=24691238

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69736816T Expired - Lifetime DE69736816T2 (de) 1996-06-26 1997-06-23 Verfahren zur herstellung eines kondensators

Country Status (8)

Country Link
US (3) US5843830A (de)
EP (1) EP0958600B1 (de)
JP (2) JP3822642B2 (de)
KR (1) KR100411353B1 (de)
AT (1) ATE342581T1 (de)
AU (1) AU3572297A (de)
DE (1) DE69736816T2 (de)
WO (1) WO1997050116A1 (de)

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US6911371B2 (en) * 1997-12-19 2005-06-28 Micron Technology, Inc. Capacitor forming methods with barrier layers to threshold voltage shift inducing material
KR100506513B1 (ko) * 1997-12-27 2007-11-02 주식회사 하이닉스반도체 강유전체 캐패시터 형성 방법
US6682970B1 (en) 1998-02-27 2004-01-27 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US6150706A (en) * 1998-02-27 2000-11-21 Micron Technology, Inc. Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer
US7034353B2 (en) 1998-02-27 2006-04-25 Micron Technology, Inc. Methods for enhancing capacitors having roughened features to increase charge-storage capacity
US6191443B1 (en) 1998-02-28 2001-02-20 Micron Technology, Inc. Capacitors, methods of forming capacitors, and DRAM memory cells
US6162744A (en) * 1998-02-28 2000-12-19 Micron Technology, Inc. Method of forming capacitors having high-K oxygen containing capacitor dielectric layers, method of processing high-K oxygen containing dielectric layers, method of forming a DRAM cell having having high-K oxygen containing capacitor dielectric layers
US6730559B2 (en) 1998-04-10 2004-05-04 Micron Technology, Inc. Capacitors and methods of forming capacitors
US6156638A (en) * 1998-04-10 2000-12-05 Micron Technology, Inc. Integrated circuitry and method of restricting diffusion from one material to another
US6165834A (en) * 1998-05-07 2000-12-26 Micron Technology, Inc. Method of forming capacitors, method of processing dielectric layers, method of forming a DRAM cell
US6255186B1 (en) 1998-05-21 2001-07-03 Micron Technology, Inc. Methods of forming integrated circuitry and capacitors having a capacitor electrode having a base and a pair of walls projecting upwardly therefrom
JP2000138349A (ja) * 1998-10-30 2000-05-16 Sharp Corp 半導体記憶装置の製造方法
US6159786A (en) * 1998-12-14 2000-12-12 Taiwan Semiconductor Manufacturing Company Well-controlled CMP process for DRAM technology
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US6696718B1 (en) 1999-04-06 2004-02-24 Micron Technology, Inc. Capacitor having an electrode formed from a transition metal or a conductive metal-oxide, and method of forming same
TW454330B (en) * 1999-05-26 2001-09-11 Matsushita Electronics Corp Semiconductor apparatus and its manufacturing method
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US6590246B1 (en) 2000-02-08 2003-07-08 Micron Technology, Inc. Structures and methods for improved capacitor cells in integrated circuits
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US6686298B1 (en) 2000-06-22 2004-02-03 Micron Technology, Inc. Methods of forming structures over semiconductor substrates, and methods of forming transistors associated with semiconductor substrates
US6833329B1 (en) 2000-06-22 2004-12-21 Micron Technology, Inc. Methods of forming oxide regions over semiconductor substrates
US6660657B1 (en) * 2000-08-07 2003-12-09 Micron Technology, Inc. Methods of incorporating nitrogen into silicon-oxide-containing layers
US6903005B1 (en) 2000-08-30 2005-06-07 Micron Technology, Inc. Method for the formation of RuSixOy-containing barrier layers for high-k dielectrics
US6461909B1 (en) 2000-08-30 2002-10-08 Micron Technology, Inc. Process for fabricating RuSixOy-containing adhesion layers
US6562684B1 (en) 2000-08-30 2003-05-13 Micron Technology, Inc. Methods of forming dielectric materials
US6410968B1 (en) * 2000-08-31 2002-06-25 Micron Technology, Inc. Semiconductor device with barrier layer
US6576964B1 (en) * 2000-08-31 2003-06-10 Micron Technology, Inc. Dielectric layer for a semiconductor device having less current leakage and increased capacitance
US6521544B1 (en) * 2000-08-31 2003-02-18 Micron Technology, Inc. Method of forming an ultra thin dielectric film
JP2002151657A (ja) * 2000-11-08 2002-05-24 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
US6709945B2 (en) * 2001-01-16 2004-03-23 Micron Technology, Inc. Reduced aspect ratio digit line contact process flow used during the formation of a semiconductor device
JP2002231903A (ja) 2001-02-06 2002-08-16 Sanyo Electric Co Ltd 誘電体素子およびその製造方法
US6696336B2 (en) * 2001-05-14 2004-02-24 Micron Technology, Inc. Double sided container process used during the manufacture of a semiconductor device
KR100420121B1 (ko) * 2001-06-21 2004-03-02 삼성전자주식회사 강유전막을 평탄화막으로 이용하는 강유전체 메모리 장치 및 그 제조방법
US6878585B2 (en) 2001-08-29 2005-04-12 Micron Technology, Inc. Methods of forming capacitors
US6670717B2 (en) * 2001-10-15 2003-12-30 International Business Machines Corporation Structure and method for charge sensitive electrical devices
US6723599B2 (en) 2001-12-03 2004-04-20 Micron Technology, Inc. Methods of forming capacitors and methods of forming capacitor dielectric layers
JP2004146772A (ja) 2002-03-18 2004-05-20 Fujitsu Ltd 半導体装置及びその製造方法
JP2004063559A (ja) * 2002-07-25 2004-02-26 Renesas Technology Corp 半導体装置
US7008840B2 (en) * 2002-08-26 2006-03-07 Matsushita Electrical Industrial Co., Ltd. Method for manufacturing semiconductor device with capacitor elements
KR100492903B1 (ko) * 2002-11-13 2005-06-02 주식회사 하이닉스반도체 강유전체 메모리 소자의 캐패시터 제조방법
KR20050002032A (ko) * 2003-06-30 2005-01-07 주식회사 하이닉스반도체 엠티피 구조의 캐패시터를 구비하는 강유전체 메모리소자의 제조 방법
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US7256980B2 (en) * 2003-12-30 2007-08-14 Du Pont Thin film capacitors on ceramic
US7126182B2 (en) * 2004-08-13 2006-10-24 Micron Technology, Inc. Memory circuitry
US7776715B2 (en) 2005-07-26 2010-08-17 Micron Technology, Inc. Reverse construction memory cell
US8742540B2 (en) * 2005-08-31 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Insulation layer to improve capacitor breakdown voltage
JP4954614B2 (ja) * 2006-05-30 2012-06-20 セイコーエプソン株式会社 強誘電体メモリ装置の製造方法

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Also Published As

Publication number Publication date
DE69736816T2 (de) 2007-08-09
ATE342581T1 (de) 2006-11-15
AU3572297A (en) 1998-01-14
KR20000022256A (ko) 2000-04-25
EP0958600A1 (de) 1999-11-24
US6171925B1 (en) 2001-01-09
KR100411353B1 (ko) 2004-04-13
US5844771A (en) 1998-12-01
EP0958600B1 (de) 2006-10-11
JP2006216978A (ja) 2006-08-17
WO1997050116A1 (en) 1997-12-31
US5843830A (en) 1998-12-01
JP2001525986A (ja) 2001-12-11
JP3822642B2 (ja) 2006-09-20

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Legal Events

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