DE69738992D1 - Multibit-Halbleiterspeichervorrichtung - Google Patents

Multibit-Halbleiterspeichervorrichtung

Info

Publication number
DE69738992D1
DE69738992D1 DE69738992T DE69738992T DE69738992D1 DE 69738992 D1 DE69738992 D1 DE 69738992D1 DE 69738992 T DE69738992 T DE 69738992T DE 69738992 T DE69738992 T DE 69738992T DE 69738992 D1 DE69738992 D1 DE 69738992D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
bit semiconductor
bit
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738992T
Other languages
English (en)
Inventor
Ken Takeuchi
Tomoharu Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6144596A external-priority patent/JP3200006B2/ja
Priority claimed from JP30233596A external-priority patent/JP3210259B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69738992D1 publication Critical patent/DE69738992D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
DE69738992T 1996-03-18 1997-03-18 Multibit-Halbleiterspeichervorrichtung Expired - Lifetime DE69738992D1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6144596A JP3200006B2 (ja) 1996-03-18 1996-03-18 不揮発性半導体記憶装置
JP9862796 1996-04-19
JP30233596A JP3210259B2 (ja) 1996-04-19 1996-10-29 半導体記憶装置及び記憶システム

Publications (1)

Publication Number Publication Date
DE69738992D1 true DE69738992D1 (de) 2008-10-23

Family

ID=27297503

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69738992T Expired - Lifetime DE69738992D1 (de) 1996-03-18 1997-03-18 Multibit-Halbleiterspeichervorrichtung
DE69734951T Expired - Lifetime DE69734951T2 (de) 1996-03-18 1997-03-18 Halbleiteranordnung und Speichersystem

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69734951T Expired - Lifetime DE69734951T2 (de) 1996-03-18 1997-03-18 Halbleiteranordnung und Speichersystem

Country Status (5)

Country Link
US (2) US5903495A (de)
EP (2) EP0797212B1 (de)
KR (1) KR100244863B1 (de)
DE (2) DE69738992D1 (de)
TW (1) TW337046B (de)

Families Citing this family (755)

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EP0797212B1 (de) 2005-12-28
US5903495A (en) 1999-05-11
EP1615227A3 (de) 2006-03-15
EP0797212A3 (de) 1999-07-14
EP1615227A2 (de) 2006-01-11
KR970067856A (ko) 1997-10-13
EP0797212A2 (de) 1997-09-24
DE69734951D1 (de) 2006-02-02
TW337046B (en) 1998-07-21
US6046935A (en) 2000-04-04
DE69734951T2 (de) 2006-09-07
KR100244863B1 (ko) 2000-03-02

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