DE69739528D1 - Photoelektrische Umwandlungsvorrichtung - Google Patents
Photoelektrische UmwandlungsvorrichtungInfo
- Publication number
- DE69739528D1 DE69739528D1 DE69739528T DE69739528T DE69739528D1 DE 69739528 D1 DE69739528 D1 DE 69739528D1 DE 69739528 T DE69739528 T DE 69739528T DE 69739528 T DE69739528 T DE 69739528T DE 69739528 D1 DE69739528 D1 DE 69739528D1
- Authority
- DE
- Germany
- Prior art keywords
- photoelectric conversion
- conversion device
- photoelectric
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3490496 | 1996-02-22 | ||
JP02783897A JP3957803B2 (ja) | 1996-02-22 | 1997-02-12 | 光電変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69739528D1 true DE69739528D1 (de) | 2009-09-17 |
Family
ID=26365818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69739528T Expired - Lifetime DE69739528D1 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
DE69738147T Expired - Lifetime DE69738147T2 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69738147T Expired - Lifetime DE69738147T2 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
Country Status (4)
Country | Link |
---|---|
US (3) | US5811790A (de) |
EP (3) | EP0791964B1 (de) |
JP (1) | JP3957803B2 (de) |
DE (2) | DE69739528D1 (de) |
Families Citing this family (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3957803B2 (ja) * | 1996-02-22 | 2007-08-15 | キヤノン株式会社 | 光電変換装置 |
JP3893181B2 (ja) * | 1996-02-26 | 2007-03-14 | キヤノン株式会社 | 放射線撮像装置及び該装置の駆動方法 |
US6415264B1 (en) * | 1997-07-08 | 2002-07-02 | Walker Digital, Llc | System and method for determining a posting payment amount |
JP3581502B2 (ja) * | 1996-11-07 | 2004-10-27 | キヤノン株式会社 | 光検出装置の製造方法 |
JP3618973B2 (ja) * | 1997-10-01 | 2005-02-09 | キヤノン株式会社 | 半導体装置及び光検出装置の製造方法 |
JP3636579B2 (ja) * | 1997-11-04 | 2005-04-06 | キヤノン株式会社 | 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム |
DE19752195A1 (de) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Halbleiterelement mit einer Tragevorrichtung und einem Zuleitungsrahmen und einem damit verbundenen Halbleiterchip |
JP3839941B2 (ja) * | 1997-11-28 | 2006-11-01 | キヤノン株式会社 | 放射線検出装置及び放射線検出方法 |
JPH11220656A (ja) * | 1998-01-30 | 1999-08-10 | Canon Inc | 二次元撮像装置の実装構造 |
JPH11345956A (ja) * | 1998-03-16 | 1999-12-14 | Canon Inc | 撮像装置 |
JP2000077640A (ja) * | 1998-06-19 | 2000-03-14 | Canon Inc | 画像読み取り装置および放射線撮像装置 |
JP3445166B2 (ja) * | 1998-08-26 | 2003-09-08 | 富士写真フイルム株式会社 | 放射線画像検出装置 |
JP3869952B2 (ja) * | 1998-09-21 | 2007-01-17 | キヤノン株式会社 | 光電変換装置とそれを用いたx線撮像装置 |
US20010026399A1 (en) * | 1998-09-24 | 2001-10-04 | Masaaki Nakabayashi | Diffractive optical element and method of manufacture of the same |
JP3290631B2 (ja) | 1998-10-02 | 2002-06-10 | キヤノン株式会社 | 光学ユニット、光学ユニットの製造方法、光学ユニットを用いた光学系、光学ユニットを用いた露光装置及びこの露光装置を用いたデバイスの製造方法 |
JP2000131444A (ja) * | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
US6157538A (en) * | 1998-12-07 | 2000-12-05 | Intel Corporation | Heat dissipation apparatus and method |
FR2790327B1 (fr) * | 1999-02-26 | 2001-04-13 | Commissariat Energie Atomique | Systeme electronique fonctionnant sous irradiation, procede de conception d'un tel systeme, et application de celui-ci a la commande d'un robot mobile |
JP2001099942A (ja) * | 1999-09-29 | 2001-04-13 | Toshiba Corp | X線平面検出装置 |
AU2001225485A1 (en) * | 2000-01-11 | 2001-07-24 | Hamamatsu Photonics K.K. | X-ray image sensor |
US6473310B1 (en) * | 2000-02-18 | 2002-10-29 | Stmicroelectronics S.R.L. | Insulated power multichip package |
JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびx線ct装置 |
US6855935B2 (en) | 2000-03-31 | 2005-02-15 | Canon Kabushiki Kaisha | Electromagnetic wave detector |
JP2001296363A (ja) * | 2000-04-14 | 2001-10-26 | Fuji Photo Film Co Ltd | 放射線検出装置 |
JP2002050754A (ja) * | 2000-05-08 | 2002-02-15 | Canon Inc | 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム |
JP3658278B2 (ja) * | 2000-05-16 | 2005-06-08 | キヤノン株式会社 | 固体撮像装置およびそれを用いた固体撮像システム |
DE60144280D1 (en) * | 2000-05-19 | 2011-05-05 | Hamamatsu Photonics Kk | Lung |
US6800877B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
JP2002062417A (ja) | 2000-06-07 | 2002-02-28 | Canon Inc | 回折光学素子、該回折光学素子を有する光学系及び光学機器、回折光学素子の製造方法、回折光学素子製造用の金型 |
JP4761587B2 (ja) * | 2000-07-04 | 2011-08-31 | キヤノン株式会社 | 放射線撮像装置及びシステム |
JP4532782B2 (ja) | 2000-07-04 | 2010-08-25 | キヤノン株式会社 | 放射線撮像装置及びシステム |
US6800836B2 (en) * | 2000-07-10 | 2004-10-05 | Canon Kabushiki Kaisha | Image pickup device, radiation image pickup device and image processing system |
JP5016746B2 (ja) * | 2000-07-28 | 2012-09-05 | キヤノン株式会社 | 撮像装置及びその駆動方法 |
JP3496633B2 (ja) * | 2000-10-05 | 2004-02-16 | 日本電気株式会社 | ヒートシンク及びこれを用いた電源ユニット |
JP3840050B2 (ja) * | 2000-11-01 | 2006-11-01 | キヤノン株式会社 | 電磁波変換装置 |
JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
JP2002214352A (ja) * | 2001-01-19 | 2002-07-31 | Canon Inc | 放射線画像撮影装置 |
US6847039B2 (en) * | 2001-03-28 | 2005-01-25 | Canon Kabushiki Kaisha | Photodetecting device, radiation detecting device, and radiation imaging system |
US6521881B2 (en) * | 2001-04-16 | 2003-02-18 | Kingpak Technology Inc. | Stacked structure of an image sensor and method for manufacturing the same |
US6765187B2 (en) * | 2001-06-27 | 2004-07-20 | Canon Kabushiki Kaisha | Imaging apparatus |
JP2003035778A (ja) * | 2001-07-19 | 2003-02-07 | Canon Inc | 光電変換装置および放射線撮像装置 |
US7034309B2 (en) * | 2001-11-13 | 2006-04-25 | Canon Kabushiki Kaisha | Radiation detecting apparatus and method of driving the same |
JP2003194951A (ja) * | 2001-12-28 | 2003-07-09 | Canon Inc | X線撮影装置 |
JP2003240861A (ja) * | 2002-02-20 | 2003-08-27 | Canon Inc | 放射線検出素子、放射線撮像装置及び放射線検出方法 |
US7230247B2 (en) | 2002-03-08 | 2007-06-12 | Hamamatsu Photonics K.K. | Detector |
JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
US7214945B2 (en) * | 2002-06-11 | 2007-05-08 | Canon Kabushiki Kaisha | Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system |
US7112799B2 (en) * | 2002-09-18 | 2006-09-26 | Koninklijke Philips Electronics N.V. | X-ray detector with a plurality of detector units |
EP1420453B1 (de) * | 2002-11-13 | 2011-03-09 | Canon Kabushiki Kaisha | Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung und Strahlungsbildaufnahmesystem |
JP4663956B2 (ja) * | 2002-12-25 | 2011-04-06 | 浜松ホトニクス株式会社 | 光検出装置 |
JP4289913B2 (ja) | 2003-03-12 | 2009-07-01 | キヤノン株式会社 | 放射線検出装置及びその製造方法 |
JP4421209B2 (ja) * | 2003-04-11 | 2010-02-24 | 浜松ホトニクス株式会社 | 放射線検出器 |
JP2004358211A (ja) * | 2003-05-14 | 2004-12-24 | Shimadzu Corp | 外科用x線tv装置 |
JP2006526925A (ja) * | 2003-06-05 | 2006-11-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | X線放射線の検出のための検出器 |
JP2005176896A (ja) * | 2003-12-16 | 2005-07-07 | Canon Inc | X線画像処理装置、x線画像処理方法、プログラム及びコンピュータ可読記憶媒体 |
WO2005070296A1 (ja) | 2004-01-22 | 2005-08-04 | Canon Kabushiki Kaisha | X線撮影装置及びx線撮影方法 |
GB0409572D0 (en) * | 2004-04-29 | 2004-06-02 | Univ Sheffield | High resolution imaging |
US7317190B2 (en) * | 2004-09-24 | 2008-01-08 | General Electric Company | Radiation absorbing x-ray detector panel support |
US7282719B2 (en) * | 2004-09-30 | 2007-10-16 | Canon Kabushiki Kaisha | Image pickup apparatus and radiation image pickup apparatus |
US7866163B2 (en) * | 2004-10-04 | 2011-01-11 | General Electric Company | Radiographic detector docking station with dynamic environmental control |
US7046764B1 (en) | 2004-10-04 | 2006-05-16 | General Electric Company | X-ray detector having an accelerometer |
US7189972B2 (en) * | 2004-10-04 | 2007-03-13 | General Electric Company | X-ray detector with impact absorbing cover |
JP4379295B2 (ja) * | 2004-10-26 | 2009-12-09 | ソニー株式会社 | 半導体イメージセンサー・モジュール及びその製造方法 |
US7342998B2 (en) * | 2004-11-18 | 2008-03-11 | General Electric Company | X-ray detector quick-connect connection system |
US7581885B2 (en) * | 2004-11-24 | 2009-09-01 | General Electric Company | Method and system of aligning x-ray detector for data acquisition |
US7381964B1 (en) | 2004-11-24 | 2008-06-03 | General Electric Company | Method and system of x-ray data calibration |
JP5013754B2 (ja) * | 2005-06-13 | 2012-08-29 | キヤノン株式会社 | 電磁波検出装置、放射線検出装置、放射線検出システム及びレーザ加工方法 |
JP5207583B2 (ja) * | 2005-07-25 | 2013-06-12 | キヤノン株式会社 | 放射線検出装置および放射線検出システム |
SE0600056L (sv) * | 2006-01-13 | 2007-07-14 | Tomas Unfors | Arrangemang och anordning för avkänning och presentation av strålning |
JP4891096B2 (ja) | 2006-01-30 | 2012-03-07 | キヤノン株式会社 | 放射線撮像装置 |
JP4807121B2 (ja) * | 2006-03-24 | 2011-11-02 | 株式会社島津製作所 | 放射線検出装置 |
US7504637B2 (en) * | 2006-07-11 | 2009-03-17 | Aeroflex Colorado Springs Inc. | Two component photodiode detector |
JP2008035356A (ja) * | 2006-07-31 | 2008-02-14 | Ricoh Co Ltd | ノイズキャンセラ、ノイズキャンセラを有する集音装置及びノイズキャンセラを有する携帯電話機 |
JP2007288777A (ja) * | 2007-03-27 | 2007-11-01 | Canon Inc | 光電変換装置及びその製造方法並びにx線撮像装置 |
JP4911312B2 (ja) * | 2007-07-13 | 2012-04-04 | 株式会社島津製作所 | 撮像装置 |
JP5142943B2 (ja) * | 2007-11-05 | 2013-02-13 | キヤノン株式会社 | 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム |
JP5032276B2 (ja) * | 2007-11-19 | 2012-09-26 | 株式会社東芝 | 放射線検出装置 |
EP2269231A4 (de) * | 2008-03-11 | 2011-04-20 | Lightwave Power Inc | Integrierte solarzelle mit wellenlängenumwandlungsschichten sowie lichtführungs- und konzentrationsschichten |
JP5284194B2 (ja) * | 2008-08-07 | 2013-09-11 | キヤノン株式会社 | プリント配線板およびプリント回路板 |
JP2010066109A (ja) | 2008-09-10 | 2010-03-25 | Canon Inc | 放射線装置 |
JP5694774B2 (ja) * | 2008-10-03 | 2015-04-01 | 株式会社東芝 | 放射線検出装置及び放射線撮影装置 |
US8389862B2 (en) | 2008-10-07 | 2013-03-05 | Mc10, Inc. | Extremely stretchable electronics |
EP2349440B1 (de) | 2008-10-07 | 2019-08-21 | Mc10, Inc. | Katheterballon mit dehnbarer integrierter schaltung und sensoranordnung |
US9123614B2 (en) | 2008-10-07 | 2015-09-01 | Mc10, Inc. | Methods and applications of non-planar imaging arrays |
US8097926B2 (en) | 2008-10-07 | 2012-01-17 | Mc10, Inc. | Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy |
US8886334B2 (en) | 2008-10-07 | 2014-11-11 | Mc10, Inc. | Systems, methods, and devices using stretchable or flexible electronics for medical applications |
JP5376897B2 (ja) * | 2008-10-24 | 2013-12-25 | 富士フイルム株式会社 | 放射線画像撮影装置 |
GB0822149D0 (en) * | 2008-12-04 | 2009-01-14 | Univ Sheffield | Provision of image data |
JP5281484B2 (ja) | 2009-05-28 | 2013-09-04 | 浜松ホトニクス株式会社 | 放射線検出ユニット |
WO2010148060A1 (en) | 2009-06-17 | 2010-12-23 | The Regents Of The University Of Michigan | Photodiode and other sensor structures in flat-panel x-ray imagers and method for improving topological uniformity of the photodiode and other sensor structures in flat-panel x-ray imagers based on thin-film electronics |
JP5485078B2 (ja) * | 2009-09-30 | 2014-05-07 | 富士フイルム株式会社 | 可搬型放射線撮影装置 |
JP5539109B2 (ja) * | 2009-09-30 | 2014-07-02 | 富士フイルム株式会社 | 可搬型放射線撮影装置 |
WO2011041727A1 (en) | 2009-10-01 | 2011-04-07 | Mc10, Inc. | Protective cases with integrated electronics |
JP5646289B2 (ja) * | 2010-11-09 | 2014-12-24 | 株式会社東芝 | 放射線検出装置 |
JP2014523633A (ja) | 2011-05-27 | 2014-09-11 | エムシー10 インコーポレイテッド | 電子的、光学的、且つ/又は機械的装置及びシステム並びにこれらの装置及びシステムを製造する方法 |
WO2013022853A1 (en) | 2011-08-05 | 2013-02-14 | Mc10, Inc. | Catheter balloon methods and apparatus employing sensing elements |
US9757050B2 (en) | 2011-08-05 | 2017-09-12 | Mc10, Inc. | Catheter balloon employing force sensing elements |
US20130200268A1 (en) * | 2011-09-28 | 2013-08-08 | Mc10, Inc. | Electronics for detection of a property of a surface |
JP2013174465A (ja) * | 2012-02-23 | 2013-09-05 | Canon Inc | 放射線検出装置 |
JP2013228366A (ja) * | 2012-03-29 | 2013-11-07 | Canon Inc | 放射線検出装置及び放射線検出システム |
US9012857B2 (en) * | 2012-05-07 | 2015-04-21 | Koninklijke Philips N.V. | Multi-layer horizontal computed tomography (CT) detector array with at least one thin photosensor array layer disposed between at least two scintillator array layers |
US9226402B2 (en) | 2012-06-11 | 2015-12-29 | Mc10, Inc. | Strain isolation structures for stretchable electronics |
US9295842B2 (en) | 2012-07-05 | 2016-03-29 | Mc10, Inc. | Catheter or guidewire device including flow sensing and use thereof |
WO2014007871A1 (en) | 2012-07-05 | 2014-01-09 | Mc10, Inc. | Catheter device including flow sensing |
KR20150072415A (ko) | 2012-10-09 | 2015-06-29 | 엠씨10, 인크 | 의류에 집적되는 컨포멀 전자기기 |
US9171794B2 (en) | 2012-10-09 | 2015-10-27 | Mc10, Inc. | Embedding thin chips in polymer |
US8933540B2 (en) | 2013-02-28 | 2015-01-13 | International Business Machines Corporation | Thermal via for 3D integrated circuits structures |
KR20140132885A (ko) * | 2013-05-08 | 2014-11-19 | 엘지전자 주식회사 | 태양 전지 모듈 및 이에 사용되는 에지 테이프 |
US9706647B2 (en) | 2013-05-14 | 2017-07-11 | Mc10, Inc. | Conformal electronics including nested serpentine interconnects |
KR20160040670A (ko) | 2013-08-05 | 2016-04-14 | 엠씨10, 인크 | 곡면부착형 전자기기를 포함하는 유연한 온도 센서 |
JP2015038435A (ja) * | 2013-08-19 | 2015-02-26 | 株式会社東芝 | 放射線検出器 |
CA2925387A1 (en) | 2013-10-07 | 2015-04-16 | Mc10, Inc. | Conformal sensor systems for sensing and analysis |
CN105813545A (zh) | 2013-11-22 | 2016-07-27 | Mc10股份有限公司 | 用于感测和分析心搏的适形传感器系统 |
WO2015103580A2 (en) | 2014-01-06 | 2015-07-09 | Mc10, Inc. | Encapsulated conformal electronic systems and devices, and methods of making and using the same |
JP6637896B2 (ja) | 2014-03-04 | 2020-01-29 | エムシー10 インコーポレイテッドMc10,Inc. | 電子デバイス用の可撓性を有するマルチパート封止ハウジングを備えるコンフォーマルなicデバイス |
US9899330B2 (en) | 2014-10-03 | 2018-02-20 | Mc10, Inc. | Flexible electronic circuits with embedded integrated circuit die |
US10297572B2 (en) | 2014-10-06 | 2019-05-21 | Mc10, Inc. | Discrete flexible interconnects for modules of integrated circuits |
USD781270S1 (en) | 2014-10-15 | 2017-03-14 | Mc10, Inc. | Electronic device having antenna |
EP3038349B1 (de) | 2014-12-22 | 2018-03-14 | Canon Kabushiki Kaisha | Strahlungserkennungsvorrichtung und strahlungsabbildungssystem |
CN107530004A (zh) | 2015-02-20 | 2018-01-02 | Mc10股份有限公司 | 基于贴身状况、位置和/或取向的可穿戴式设备的自动检测和构造 |
US10398343B2 (en) | 2015-03-02 | 2019-09-03 | Mc10, Inc. | Perspiration sensor |
US10653332B2 (en) | 2015-07-17 | 2020-05-19 | Mc10, Inc. | Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers |
JP6562758B2 (ja) | 2015-08-07 | 2019-08-21 | キヤノン株式会社 | Pwm信号生成装置、モーター制御装置及び光走査装置 |
WO2017031129A1 (en) | 2015-08-19 | 2017-02-23 | Mc10, Inc. | Wearable heat flux devices and methods of use |
CN108290070A (zh) | 2015-10-01 | 2018-07-17 | Mc10股份有限公司 | 用于与虚拟环境相互作用的方法和系统 |
EP3359031A4 (de) | 2015-10-05 | 2019-05-22 | Mc10, Inc. | Verfahren und system zur neuromodulation und stimulation |
US11016204B2 (en) * | 2015-12-11 | 2021-05-25 | Shanghai United Imaging Healthcare Co., Ltd. | Imaging system and method for making the same |
EP3420733A4 (de) | 2016-02-22 | 2019-06-26 | Mc10, Inc. | System, vorrichtung und verfahren für am-körper-erfassung von sensorinformationen mit gekoppelter nabe und sensorknoten |
EP3420732B8 (de) | 2016-02-22 | 2020-12-30 | Medidata Solutions, Inc. | System, vorrichtungen und verfahren zur daten- und leistungsübertragung auf dem körper |
JP6791238B2 (ja) * | 2016-02-22 | 2020-11-25 | コニカミノルタ株式会社 | 可搬型放射線画像撮影装置 |
JP6646486B2 (ja) | 2016-03-16 | 2020-02-14 | キヤノン株式会社 | 放射線検出装置、及び放射線撮像システム |
CN109310340A (zh) | 2016-04-19 | 2019-02-05 | Mc10股份有限公司 | 用于测量汗液的方法和系统 |
US10447347B2 (en) | 2016-08-12 | 2019-10-15 | Mc10, Inc. | Wireless charger and high speed data off-loader |
US20180226515A1 (en) * | 2017-02-06 | 2018-08-09 | Semiconductor Components Industries, Llc | Semiconductor device and method of forming embedded thermoelectric cooler for heat dissipation of image sensor |
JP6953186B2 (ja) * | 2017-05-31 | 2021-10-27 | キヤノン電子管デバイス株式会社 | 放射線検出器 |
JP7071083B2 (ja) | 2017-10-06 | 2022-05-18 | キヤノン株式会社 | 放射線撮影装置 |
JP7251667B2 (ja) * | 2018-05-08 | 2023-04-04 | コニカミノルタ株式会社 | 放射線画像撮影装置 |
JP6762994B2 (ja) | 2018-07-31 | 2020-09-30 | キヤノン株式会社 | 放射線撮影装置 |
US11398520B2 (en) * | 2019-01-11 | 2022-07-26 | HKC Corporation Limited | X-ray detector, method for manufacturing x-ray detector, and medical equipment |
US11513428B1 (en) | 2021-05-20 | 2022-11-29 | Dell Products L.P. | Camera and lens cap |
US11733594B2 (en) | 2021-05-20 | 2023-08-22 | Dell Products L.P. | Camera and mount |
US11586100B2 (en) * | 2021-05-20 | 2023-02-21 | Dell Products L.P. | Cylindrical camera thermal shield |
US11671687B2 (en) | 2021-05-20 | 2023-06-06 | Dell Products L.P. | Cylindrical camera and integrated support |
US11513425B1 (en) | 2021-05-20 | 2022-11-29 | Dell Products L.P. | Camera stand with integrated tilt hinge |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4660066A (en) * | 1982-09-08 | 1987-04-21 | Texas Instruments Incorporated | Structure for packaging focal plane imagers and signal processing circuits |
US4763344A (en) * | 1986-08-07 | 1988-08-09 | Piestrup Melvin A | X-ray source from transition radiation using high density foils |
JPS63284485A (ja) * | 1987-05-15 | 1988-11-21 | Shimadzu Corp | 放射線像受像装置 |
US5196691A (en) * | 1989-11-21 | 1993-03-23 | Canon Kabushiki Kaisha | Photoelectric converting device having original conveyance guide and an image processing apparatus incorporating the device |
FR2669177B1 (fr) * | 1990-11-09 | 1992-12-31 | Sofradir Ste Fse Detecteurs In | Procede pour realiser l'assemblage reversible d'un circuit electronique de lecture et/ou d'exploitation et d'un support conducteur ou non de l'electricite. |
US5281803A (en) * | 1990-11-26 | 1994-01-25 | Canon Kabushiki Kaisha | Image sensor and information processing apparatus |
EP0512186A1 (de) * | 1991-05-03 | 1992-11-11 | International Business Machines Corporation | Kühlungsstruktur und Verpackungsmodule für Halbleiter |
JP3067435B2 (ja) * | 1992-12-24 | 2000-07-17 | キヤノン株式会社 | 画像読取用光電変換装置及び該装置を有する画像処理装置 |
JP3066944B2 (ja) * | 1993-12-27 | 2000-07-17 | キヤノン株式会社 | 光電変換装置、その駆動方法及びそれを有するシステム |
US5596228A (en) * | 1994-03-10 | 1997-01-21 | Oec Medical Systems, Inc. | Apparatus for cooling charge coupled device imaging systems |
US5556716A (en) * | 1994-08-25 | 1996-09-17 | E. I. Du Pont De Nemours And Company | X-ray photoconductive compositions for x-ray radiography |
US5637921A (en) * | 1995-04-21 | 1997-06-10 | Sun Microsystems, Inc. | Sub-ambient temperature electronic package |
JP3957803B2 (ja) * | 1996-02-22 | 2007-08-15 | キヤノン株式会社 | 光電変換装置 |
US5689542A (en) * | 1996-06-06 | 1997-11-18 | Varian Associates, Inc. | X-ray generating apparatus with a heat transfer device |
US5903052A (en) * | 1998-05-12 | 1999-05-11 | Industrial Technology Research Institute | Structure for semiconductor package for improving the efficiency of spreading heat |
-
1997
- 1997-02-12 JP JP02783897A patent/JP3957803B2/ja not_active Expired - Fee Related
- 1997-02-20 US US08/803,106 patent/US5811790A/en not_active Expired - Lifetime
- 1997-02-21 EP EP97102879A patent/EP0791964B1/de not_active Expired - Lifetime
- 1997-02-21 DE DE69739528T patent/DE69739528D1/de not_active Expired - Lifetime
- 1997-02-21 DE DE69738147T patent/DE69738147T2/de not_active Expired - Lifetime
- 1997-02-21 EP EP05003415A patent/EP1536476B1/de not_active Expired - Lifetime
- 1997-02-21 EP EP05003416A patent/EP1536477B1/de not_active Expired - Lifetime
-
1998
- 1998-06-30 US US09/107,283 patent/US5965872A/en not_active Expired - Lifetime
-
1999
- 1999-08-24 US US09/379,630 patent/US6049074A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6049074A (en) | 2000-04-11 |
EP1536477B1 (de) | 2009-08-05 |
DE69738147D1 (de) | 2007-10-31 |
EP1536477A3 (de) | 2006-05-17 |
US5965872A (en) | 1999-10-12 |
JP3957803B2 (ja) | 2007-08-15 |
US5811790A (en) | 1998-09-22 |
JPH09288184A (ja) | 1997-11-04 |
EP1536476A2 (de) | 2005-06-01 |
EP0791964A3 (de) | 1998-11-18 |
EP1536477A2 (de) | 2005-06-01 |
EP1536476B1 (de) | 2011-07-27 |
EP0791964B1 (de) | 2007-09-19 |
EP0791964A2 (de) | 1997-08-27 |
EP1536476A3 (de) | 2006-05-17 |
DE69738147T2 (de) | 2008-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE69739528D1 (de) | Photoelektrische Umwandlungsvorrichtung | |
DE69829828D1 (de) | Photoelektrische Umwandlungsanordnung | |
DE69736534D1 (de) | Fotoelektrisches Umwandlungsgerät | |
DE69818365D1 (de) | Photoelektrische Umwandlungsvorrichtung | |
DE69721109T2 (de) | Photoelektrische Umwandlervorrichtung mit Ladungsabschöpfung | |
DE69835127D1 (de) | Photoelektrische Umwandlungsvorrichtung | |
DE69513475T2 (de) | Fotoelektrisches Umwandlungsgerät | |
DE69527910T2 (de) | Photoelektrische Wandlungsvorrichtung | |
DE69637703D1 (de) | Photoelektrischer Umwandler | |
DE69819074D1 (de) | Leistungswandlervorrichtung | |
DE69731879D1 (de) | Direktkonversionsempfänger | |
DE69737924D1 (de) | Photoelektrischer Wandler | |
DE69723601D1 (de) | Bildelementumwandlungsgerät | |
DE69728636D1 (de) | Photoelektrisches Umwandlungsgerät | |
DE69708841D1 (de) | Abtastratenumwandlung | |
DE69716989D1 (de) | Sammler | |
DE69825808D1 (de) | Photoelektrische Umwandlungsanordnung | |
DE69427051T2 (de) | Photoelektrische Umwandlungsanordnung | |
DE69331357D1 (de) | Photoelektrische Umwandlungsvorrichtung | |
DE69425928D1 (de) | Photoelektrischer Umwandler | |
DE69732946D1 (de) | Photoelectrischer Konverter | |
DE69531764D1 (de) | Photoelektrisches Umwandlungsmodul | |
DE69716686D1 (de) | Lichtschranke | |
FR2744527B1 (fr) | Detecteur photoelectrique etanche | |
DE29713957U1 (de) | Pressringvorrichtung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |