DE69739528D1 - Photoelektrische Umwandlungsvorrichtung - Google Patents
Photoelektrische UmwandlungsvorrichtungInfo
- Publication number
- DE69739528D1 DE69739528D1 DE69739528T DE69739528T DE69739528D1 DE 69739528 D1 DE69739528 D1 DE 69739528D1 DE 69739528 T DE69739528 T DE 69739528T DE 69739528 T DE69739528 T DE 69739528T DE 69739528 D1 DE69739528 D1 DE 69739528D1
- Authority
- DE
- Germany
- Prior art keywords
- photoelectric conversion
- conversion device
- photoelectric
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/024—Arrangements for cooling, heating, ventilating or temperature compensation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/085—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3490496 | 1996-02-22 | ||
JP02783897A JP3957803B2 (ja) | 1996-02-22 | 1997-02-12 | 光電変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69739528D1 true DE69739528D1 (de) | 2009-09-17 |
Family
ID=26365818
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69738147T Expired - Lifetime DE69738147T2 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
DE69739528T Expired - Lifetime DE69739528D1 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69738147T Expired - Lifetime DE69738147T2 (de) | 1996-02-22 | 1997-02-21 | Photoelektrische Umwandlungsvorrichtung |
Country Status (4)
Country | Link |
---|---|
US (3) | US5811790A (de) |
EP (3) | EP0791964B1 (de) |
JP (1) | JP3957803B2 (de) |
DE (2) | DE69738147T2 (de) |
Families Citing this family (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3957803B2 (ja) * | 1996-02-22 | 2007-08-15 | キヤノン株式会社 | 光電変換装置 |
JP3893181B2 (ja) * | 1996-02-26 | 2007-03-14 | キヤノン株式会社 | 放射線撮像装置及び該装置の駆動方法 |
US6415264B1 (en) * | 1997-07-08 | 2002-07-02 | Walker Digital, Llc | System and method for determining a posting payment amount |
JP3581502B2 (ja) * | 1996-11-07 | 2004-10-27 | キヤノン株式会社 | 光検出装置の製造方法 |
JP3618973B2 (ja) * | 1997-10-01 | 2005-02-09 | キヤノン株式会社 | 半導体装置及び光検出装置の製造方法 |
JP3636579B2 (ja) * | 1997-11-04 | 2005-04-06 | キヤノン株式会社 | 光電変換装置、光電変換装置の駆動方法及びその光電変換装置を有するシステム |
DE19752195A1 (de) * | 1997-11-25 | 1999-06-17 | Siemens Ag | Halbleiterelement mit einer Tragevorrichtung und einem Zuleitungsrahmen und einem damit verbundenen Halbleiterchip |
JP3839941B2 (ja) * | 1997-11-28 | 2006-11-01 | キヤノン株式会社 | 放射線検出装置及び放射線検出方法 |
JPH11220656A (ja) * | 1998-01-30 | 1999-08-10 | Canon Inc | 二次元撮像装置の実装構造 |
JPH11345956A (ja) * | 1998-03-16 | 1999-12-14 | Canon Inc | 撮像装置 |
JP2000077640A (ja) * | 1998-06-19 | 2000-03-14 | Canon Inc | 画像読み取り装置および放射線撮像装置 |
JP3445166B2 (ja) * | 1998-08-26 | 2003-09-08 | 富士写真フイルム株式会社 | 放射線画像検出装置 |
JP3869952B2 (ja) * | 1998-09-21 | 2007-01-17 | キヤノン株式会社 | 光電変換装置とそれを用いたx線撮像装置 |
US20010026399A1 (en) * | 1998-09-24 | 2001-10-04 | Masaaki Nakabayashi | Diffractive optical element and method of manufacture of the same |
JP3290631B2 (ja) | 1998-10-02 | 2002-06-10 | キヤノン株式会社 | 光学ユニット、光学ユニットの製造方法、光学ユニットを用いた光学系、光学ユニットを用いた露光装置及びこの露光装置を用いたデバイスの製造方法 |
JP2000131444A (ja) * | 1998-10-28 | 2000-05-12 | Canon Inc | 放射線検出装置、放射線検出システム、及び放射線検出装置の製造方法 |
US6157538A (en) * | 1998-12-07 | 2000-12-05 | Intel Corporation | Heat dissipation apparatus and method |
FR2790327B1 (fr) * | 1999-02-26 | 2001-04-13 | Commissariat Energie Atomique | Systeme electronique fonctionnant sous irradiation, procede de conception d'un tel systeme, et application de celui-ci a la commande d'un robot mobile |
JP2001099942A (ja) * | 1999-09-29 | 2001-04-13 | Toshiba Corp | X線平面検出装置 |
WO2001051950A1 (fr) * | 2000-01-11 | 2001-07-19 | Hamamatsu Photonics K.K. | Capteur d'image rayons x |
US6473310B1 (en) * | 2000-02-18 | 2002-10-29 | Stmicroelectronics S.R.L. | Insulated power multichip package |
JP2001318155A (ja) * | 2000-02-28 | 2001-11-16 | Toshiba Corp | 放射線検出器、およびx線ct装置 |
US6855935B2 (en) | 2000-03-31 | 2005-02-15 | Canon Kabushiki Kaisha | Electromagnetic wave detector |
JP2001296363A (ja) * | 2000-04-14 | 2001-10-26 | Fuji Photo Film Co Ltd | 放射線検出装置 |
JP2002050754A (ja) * | 2000-05-08 | 2002-02-15 | Canon Inc | 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム |
JP3658278B2 (ja) * | 2000-05-16 | 2005-06-08 | キヤノン株式会社 | 固体撮像装置およびそれを用いた固体撮像システム |
EP1300694B1 (de) * | 2000-05-19 | 2011-03-23 | Hamamatsu Photonics K.K. | Strahlungsdetektor und verfahren zu seiner herstellung |
US6800877B2 (en) * | 2000-05-26 | 2004-10-05 | Exaconnect Corp. | Semi-conductor interconnect using free space electron switch |
JP2002062417A (ja) | 2000-06-07 | 2002-02-28 | Canon Inc | 回折光学素子、該回折光学素子を有する光学系及び光学機器、回折光学素子の製造方法、回折光学素子製造用の金型 |
JP4532782B2 (ja) * | 2000-07-04 | 2010-08-25 | キヤノン株式会社 | 放射線撮像装置及びシステム |
JP4761587B2 (ja) * | 2000-07-04 | 2011-08-31 | キヤノン株式会社 | 放射線撮像装置及びシステム |
US6800836B2 (en) * | 2000-07-10 | 2004-10-05 | Canon Kabushiki Kaisha | Image pickup device, radiation image pickup device and image processing system |
JP5016746B2 (ja) * | 2000-07-28 | 2012-09-05 | キヤノン株式会社 | 撮像装置及びその駆動方法 |
JP3496633B2 (ja) * | 2000-10-05 | 2004-02-16 | 日本電気株式会社 | ヒートシンク及びこれを用いた電源ユニット |
JP3840050B2 (ja) * | 2000-11-01 | 2006-11-01 | キヤノン株式会社 | 電磁波変換装置 |
JP2002148342A (ja) * | 2000-11-07 | 2002-05-22 | Canon Inc | 放射線撮像装置 |
JP2002214352A (ja) * | 2001-01-19 | 2002-07-31 | Canon Inc | 放射線画像撮影装置 |
US6847039B2 (en) * | 2001-03-28 | 2005-01-25 | Canon Kabushiki Kaisha | Photodetecting device, radiation detecting device, and radiation imaging system |
US6521881B2 (en) * | 2001-04-16 | 2003-02-18 | Kingpak Technology Inc. | Stacked structure of an image sensor and method for manufacturing the same |
US6765187B2 (en) * | 2001-06-27 | 2004-07-20 | Canon Kabushiki Kaisha | Imaging apparatus |
JP2003035778A (ja) * | 2001-07-19 | 2003-02-07 | Canon Inc | 光電変換装置および放射線撮像装置 |
US7034309B2 (en) * | 2001-11-13 | 2006-04-25 | Canon Kabushiki Kaisha | Radiation detecting apparatus and method of driving the same |
JP2003194951A (ja) * | 2001-12-28 | 2003-07-09 | Canon Inc | X線撮影装置 |
JP2003240861A (ja) * | 2002-02-20 | 2003-08-27 | Canon Inc | 放射線検出素子、放射線撮像装置及び放射線検出方法 |
JP4237966B2 (ja) * | 2002-03-08 | 2009-03-11 | 浜松ホトニクス株式会社 | 検出器 |
US7230247B2 (en) | 2002-03-08 | 2007-06-12 | Hamamatsu Photonics K.K. | Detector |
US7214945B2 (en) * | 2002-06-11 | 2007-05-08 | Canon Kabushiki Kaisha | Radiation detecting apparatus, manufacturing method therefor, and radiation image pickup system |
WO2004027454A1 (en) * | 2002-09-18 | 2004-04-01 | Koninklijke Philips Electronics N.V. | X-ray detector with a plurality of detector units |
EP1420453B1 (de) * | 2002-11-13 | 2011-03-09 | Canon Kabushiki Kaisha | Bildaufnahmevorrichtung, Strahlungsbildaufnahmevorrichtung und Strahlungsbildaufnahmesystem |
JP4663956B2 (ja) * | 2002-12-25 | 2011-04-06 | 浜松ホトニクス株式会社 | 光検出装置 |
JP4289913B2 (ja) | 2003-03-12 | 2009-07-01 | キヤノン株式会社 | 放射線検出装置及びその製造方法 |
JP4421209B2 (ja) | 2003-04-11 | 2010-02-24 | 浜松ホトニクス株式会社 | 放射線検出器 |
JP2004358211A (ja) * | 2003-05-14 | 2004-12-24 | Shimadzu Corp | 外科用x線tv装置 |
JP2006526925A (ja) * | 2003-06-05 | 2006-11-24 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | X線放射線の検出のための検出器 |
JP2005176896A (ja) * | 2003-12-16 | 2005-07-07 | Canon Inc | X線画像処理装置、x線画像処理方法、プログラム及びコンピュータ可読記憶媒体 |
WO2005070296A1 (ja) | 2004-01-22 | 2005-08-04 | Canon Kabushiki Kaisha | X線撮影装置及びx線撮影方法 |
GB0409572D0 (en) * | 2004-04-29 | 2004-06-02 | Univ Sheffield | High resolution imaging |
US7317190B2 (en) * | 2004-09-24 | 2008-01-08 | General Electric Company | Radiation absorbing x-ray detector panel support |
US7282719B2 (en) * | 2004-09-30 | 2007-10-16 | Canon Kabushiki Kaisha | Image pickup apparatus and radiation image pickup apparatus |
US7189972B2 (en) * | 2004-10-04 | 2007-03-13 | General Electric Company | X-ray detector with impact absorbing cover |
US7866163B2 (en) * | 2004-10-04 | 2011-01-11 | General Electric Company | Radiographic detector docking station with dynamic environmental control |
US7046764B1 (en) | 2004-10-04 | 2006-05-16 | General Electric Company | X-ray detector having an accelerometer |
JP4379295B2 (ja) * | 2004-10-26 | 2009-12-09 | ソニー株式会社 | 半導体イメージセンサー・モジュール及びその製造方法 |
US7342998B2 (en) * | 2004-11-18 | 2008-03-11 | General Electric Company | X-ray detector quick-connect connection system |
US7381964B1 (en) | 2004-11-24 | 2008-06-03 | General Electric Company | Method and system of x-ray data calibration |
US7581885B2 (en) * | 2004-11-24 | 2009-09-01 | General Electric Company | Method and system of aligning x-ray detector for data acquisition |
JP5013754B2 (ja) * | 2005-06-13 | 2012-08-29 | キヤノン株式会社 | 電磁波検出装置、放射線検出装置、放射線検出システム及びレーザ加工方法 |
JP5207583B2 (ja) * | 2005-07-25 | 2013-06-12 | キヤノン株式会社 | 放射線検出装置および放射線検出システム |
SE0600056L (sv) * | 2006-01-13 | 2007-07-14 | Tomas Unfors | Arrangemang och anordning för avkänning och presentation av strålning |
JP4891096B2 (ja) | 2006-01-30 | 2012-03-07 | キヤノン株式会社 | 放射線撮像装置 |
JP4807121B2 (ja) * | 2006-03-24 | 2011-11-02 | 株式会社島津製作所 | 放射線検出装置 |
US7504637B2 (en) * | 2006-07-11 | 2009-03-17 | Aeroflex Colorado Springs Inc. | Two component photodiode detector |
JP2008035356A (ja) * | 2006-07-31 | 2008-02-14 | Ricoh Co Ltd | ノイズキャンセラ、ノイズキャンセラを有する集音装置及びノイズキャンセラを有する携帯電話機 |
JP2007288777A (ja) * | 2007-03-27 | 2007-11-01 | Canon Inc | 光電変換装置及びその製造方法並びにx線撮像装置 |
JP4911312B2 (ja) * | 2007-07-13 | 2012-04-04 | 株式会社島津製作所 | 撮像装置 |
JP5142943B2 (ja) * | 2007-11-05 | 2013-02-13 | キヤノン株式会社 | 放射線検出装置の製造方法、放射線検出装置及び放射線撮像システム |
JP5032276B2 (ja) * | 2007-11-19 | 2012-09-26 | 株式会社東芝 | 放射線検出装置 |
EP2269231A4 (de) * | 2008-03-11 | 2011-04-20 | Lightwave Power Inc | Integrierte solarzelle mit wellenlängenumwandlungsschichten sowie lichtführungs- und konzentrationsschichten |
JP5284194B2 (ja) * | 2008-08-07 | 2013-09-11 | キヤノン株式会社 | プリント配線板およびプリント回路板 |
JP2010066109A (ja) | 2008-09-10 | 2010-03-25 | Canon Inc | 放射線装置 |
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1997
- 1997-02-12 JP JP02783897A patent/JP3957803B2/ja not_active Expired - Fee Related
- 1997-02-20 US US08/803,106 patent/US5811790A/en not_active Expired - Lifetime
- 1997-02-21 DE DE69738147T patent/DE69738147T2/de not_active Expired - Lifetime
- 1997-02-21 EP EP97102879A patent/EP0791964B1/de not_active Expired - Lifetime
- 1997-02-21 EP EP05003416A patent/EP1536477B1/de not_active Expired - Lifetime
- 1997-02-21 EP EP05003415A patent/EP1536476B1/de not_active Expired - Lifetime
- 1997-02-21 DE DE69739528T patent/DE69739528D1/de not_active Expired - Lifetime
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1998
- 1998-06-30 US US09/107,283 patent/US5965872A/en not_active Expired - Lifetime
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1999
- 1999-08-24 US US09/379,630 patent/US6049074A/en not_active Expired - Lifetime
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EP1536476A2 (de) | 2005-06-01 |
US6049074A (en) | 2000-04-11 |
EP1536477A3 (de) | 2006-05-17 |
DE69738147T2 (de) | 2008-06-12 |
EP1536476B1 (de) | 2011-07-27 |
US5965872A (en) | 1999-10-12 |
EP1536477A2 (de) | 2005-06-01 |
EP1536477B1 (de) | 2009-08-05 |
EP0791964B1 (de) | 2007-09-19 |
JPH09288184A (ja) | 1997-11-04 |
EP0791964A2 (de) | 1997-08-27 |
JP3957803B2 (ja) | 2007-08-15 |
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