DE69739678D1 - Herstellungsverfahren für einen kleinen Kontaktbereich zwischen Elektroden - Google Patents

Herstellungsverfahren für einen kleinen Kontaktbereich zwischen Elektroden

Info

Publication number
DE69739678D1
DE69739678D1 DE69739678T DE69739678T DE69739678D1 DE 69739678 D1 DE69739678 D1 DE 69739678D1 DE 69739678 T DE69739678 T DE 69739678T DE 69739678 T DE69739678 T DE 69739678T DE 69739678 D1 DE69739678 D1 DE 69739678D1
Authority
DE
Germany
Prior art keywords
electrodes
manufacturing
contact area
small contact
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69739678T
Other languages
English (en)
Inventor
Brent Gilgen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69739678D1 publication Critical patent/DE69739678D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20Multistable switching devices, e.g. memristors
    • H10N70/231Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B63/00Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/061Patterning of the switching material
    • H10N70/063Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011Manufacture or treatment of multistable switching devices
    • H10N70/061Patterning of the switching material
    • H10N70/066Patterning of the switching material by filling of openings, e.g. damascene method
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/821Device geometry
    • H10N70/826Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/841Electrodes
    • H10N70/8418Electrodes adapted for focusing electric field or current, e.g. tip-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801Constructional details of multistable switching devices
    • H10N70/881Switching materials
    • H10N70/882Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828Tellurides, e.g. GeSbTe
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C2213/00Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/50Resistive cell structure aspects
    • G11C2213/52Structure characterized by the electrode material, shape, etc.
DE69739678T 1996-10-02 1997-10-02 Herstellungsverfahren für einen kleinen Kontaktbereich zwischen Elektroden Expired - Lifetime DE69739678D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/724,816 US6147395A (en) 1996-10-02 1996-10-02 Method for fabricating a small area of contact between electrodes

Publications (1)

Publication Number Publication Date
DE69739678D1 true DE69739678D1 (de) 2010-01-14

Family

ID=24912031

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69739678T Expired - Lifetime DE69739678D1 (de) 1996-10-02 1997-10-02 Herstellungsverfahren für einen kleinen Kontaktbereich zwischen Elektroden
DE69724478T Expired - Lifetime DE69724478T2 (de) 1996-10-02 1997-10-02 Verfahren zur Herstellung eines kleinflächigen Kontakts zwischen Elektroden
DE69721306T Expired - Lifetime DE69721306T2 (de) 1996-10-02 1997-10-02 Vorrichtung und verfahren zur herstellung eines kleinflächigen kontaktes zwischen elektroden und vorrichtung dafür

Family Applications After (2)

Application Number Title Priority Date Filing Date
DE69724478T Expired - Lifetime DE69724478T2 (de) 1996-10-02 1997-10-02 Verfahren zur Herstellung eines kleinflächigen Kontakts zwischen Elektroden
DE69721306T Expired - Lifetime DE69721306T2 (de) 1996-10-02 1997-10-02 Vorrichtung und verfahren zur herstellung eines kleinflächigen kontaktes zwischen elektroden und vorrichtung dafür

Country Status (8)

Country Link
US (12) US6147395A (de)
EP (3) EP0946975B1 (de)
JP (1) JP4747231B2 (de)
KR (1) KR100466675B1 (de)
AT (3) ATE248439T1 (de)
AU (1) AU8052598A (de)
DE (3) DE69739678D1 (de)
WO (1) WO1998036446A2 (de)

Families Citing this family (307)

* Cited by examiner, † Cited by third party
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EP1296377B1 (de) 2009-12-02
JP4747231B2 (ja) 2011-08-17
ATE238605T1 (de) 2003-05-15
US7935950B2 (en) 2011-05-03
US6294452B1 (en) 2001-09-25
ATE450891T1 (de) 2009-12-15
DE69724478T2 (de) 2004-06-17
US6147395A (en) 2000-11-14
EP1296377A2 (de) 2003-03-26
US20020016054A1 (en) 2002-02-07
EP1296377A3 (de) 2006-01-25
DE69721306T2 (de) 2004-01-29
AU8052598A (en) 1998-09-08
EP0946975B1 (de) 2003-04-23
US6329666B1 (en) 2001-12-11
US6150253A (en) 2000-11-21
ATE248439T1 (de) 2003-09-15
US20030127669A1 (en) 2003-07-10
US20020009858A1 (en) 2002-01-24
US6897467B2 (en) 2005-05-24
US7253430B2 (en) 2007-08-07
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EP1065736B1 (de) 2003-08-27
US20080019167A1 (en) 2008-01-24
US6462353B1 (en) 2002-10-08
US6287887B1 (en) 2001-09-11
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US6423621B2 (en) 2002-07-23
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US20040036065A1 (en) 2004-02-26
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US20020175322A1 (en) 2002-11-28
US6825107B2 (en) 2004-11-30
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US6781145B2 (en) 2004-08-24

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