DE69801429D1 - Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips - Google Patents

Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips

Info

Publication number
DE69801429D1
DE69801429D1 DE69801429T DE69801429T DE69801429D1 DE 69801429 D1 DE69801429 D1 DE 69801429D1 DE 69801429 T DE69801429 T DE 69801429T DE 69801429 T DE69801429 T DE 69801429T DE 69801429 D1 DE69801429 D1 DE 69801429D1
Authority
DE
Germany
Prior art keywords
tips
semiconductor chips
testing semiconductor
photosensitive resin
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69801429T
Other languages
English (en)
Other versions
DE69801429T2 (de
Inventor
Andre Belmont
Vincent Reynaud
William Daniau
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
MESATRONIC SAINT JEAN DE MOIRA
Original Assignee
MESATRONIC SAINT JEAN DE MOIRA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by MESATRONIC SAINT JEAN DE MOIRA filed Critical MESATRONIC SAINT JEAN DE MOIRA
Publication of DE69801429D1 publication Critical patent/DE69801429D1/de
Application granted granted Critical
Publication of DE69801429T2 publication Critical patent/DE69801429T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
DE69801429T 1997-04-10 1998-04-09 Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips Expired - Fee Related DE69801429T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9704635A FR2762140B1 (fr) 1997-04-10 1997-04-10 Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices
PCT/FR1998/000718 WO1998045716A1 (fr) 1997-04-10 1998-04-09 Procede de fabrication d'une carte a pointes de contact multiple pour le test des puces semiconductrices

Publications (2)

Publication Number Publication Date
DE69801429D1 true DE69801429D1 (de) 2001-09-27
DE69801429T2 DE69801429T2 (de) 2002-05-16

Family

ID=9505938

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801429T Expired - Fee Related DE69801429T2 (de) 1997-04-10 1998-04-09 Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips

Country Status (8)

Country Link
US (1) US6289583B1 (de)
EP (1) EP0975979B1 (de)
JP (1) JP2001521620A (de)
CN (1) CN1174251C (de)
AT (1) ATE204650T1 (de)
DE (1) DE69801429T2 (de)
FR (1) FR2762140B1 (de)
WO (1) WO1998045716A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7063541B2 (en) 1997-03-17 2006-06-20 Formfactor, Inc. Composite microelectronic spring structure and method for making same
US6579804B1 (en) * 1998-11-30 2003-06-17 Advantest, Corp. Contact structure and production method thereof and probe contact assembly using same
US6255727B1 (en) * 1999-08-03 2001-07-03 Advantest Corp. Contact structure formed by microfabrication process
US6420884B1 (en) * 1999-01-29 2002-07-16 Advantest Corp. Contact structure formed by photolithography process
US6939474B2 (en) * 1999-07-30 2005-09-06 Formfactor, Inc. Method for forming microelectronic spring structures on a substrate
US7435108B1 (en) * 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US6780001B2 (en) * 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US7189077B1 (en) 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US6888362B2 (en) * 2000-11-09 2005-05-03 Formfactor, Inc. Test head assembly for electronic components with plurality of contoured microelectronic spring contacts
US6713374B2 (en) 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US6468098B1 (en) * 1999-08-17 2002-10-22 Formfactor, Inc. Electrical contactor especially wafer level contactor using fluid pressure
FR2802000B1 (fr) * 1999-12-01 2002-03-22 Gemplus Card Int Procede de realisation d'un circuit oscillant accorde et fabrication de dispositifs de radiocommunications de faibles dimensions comprenant un tel circuit
FR2812400B1 (fr) * 2000-07-28 2002-09-27 Mesatronic Procede de fabrication d'une carte a pointes de contact multiple pour le test de circuits integres a microbilles, et dispositif de test utilisant la carte
US7396236B2 (en) 2001-03-16 2008-07-08 Formfactor, Inc. Wafer level interposer
DE60207572T2 (de) * 2001-07-11 2006-08-10 Formfactor, Inc., Livermore Verfahren zum herstellen einer nadelkarte
US6729019B2 (en) * 2001-07-11 2004-05-04 Formfactor, Inc. Method of manufacturing a probe card
JP4635395B2 (ja) * 2001-08-28 2011-02-23 凸版印刷株式会社 半導体回路検査治具の製造方法
JP2003078310A (ja) * 2001-09-04 2003-03-14 Murata Mfg Co Ltd 高周波用線路変換器、部品、モジュールおよび通信装置
US7122760B2 (en) * 2002-11-25 2006-10-17 Formfactor, Inc. Using electric discharge machining to manufacture probes
US6945827B2 (en) * 2002-12-23 2005-09-20 Formfactor, Inc. Microelectronic contact structure
JP2004356362A (ja) * 2003-05-29 2004-12-16 Dainippon Screen Mfg Co Ltd プローブカード製造用基板、検査装置、３次元造形装置および３次元造形方法
JP4107275B2 (ja) 2004-09-09 2008-06-25 セイコーエプソン株式会社 検査用プローブ及び検査装置、検査用プローブの製造方法
CN100348983C (zh) * 2005-02-07 2007-11-14 董玟昌 一种微机电探针电路薄膜及其制法
EP2360489B1 (de) * 2010-02-04 2013-04-17 Nxp B.V. Magnetfeldsensor
KR101101062B1 (ko) 2010-08-19 2011-12-30 삼성에스디아이 주식회사 충방전 장치

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5103557A (en) * 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
US4924589A (en) * 1988-05-16 1990-05-15 Leedy Glenn J Method of making and testing an integrated circuit
US5323035A (en) * 1992-10-13 1994-06-21 Glenn Leedy Interconnection structure for integrated circuits and method for making same
JPH0817192B2 (ja) * 1988-05-30 1996-02-21 株式会社日立製作所 半導体ｌｓｉ検査装置用プローブヘッドの製造方法
US5189363A (en) 1990-09-14 1993-02-23 Ibm Corporation Integrated circuit testing system having a cantilevered contact lead probe pattern mounted on a flexible tape for interconnecting an integrated circuit to a tester
US5177438A (en) * 1991-08-02 1993-01-05 Motorola, Inc. Low resistance probe for semiconductor
US5177439A (en) * 1991-08-30 1993-01-05 U.S. Philips Corporation Probe card for testing unencapsulated semiconductor devices
WO1994009374A1 (en) 1992-10-12 1994-04-28 Kabushiki Kaisha Kobe Seiko Sho Probe unit and method of manufacturing the same
US5483741A (en) * 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
US5419807A (en) * 1993-09-03 1995-05-30 Micron Technology, Inc. Method of providing electrical interconnect between two layers within a silicon substrate, semiconductor apparatus, and method of forming apparatus for testing semiconductor circuitry for operability
JP2710544B2 (ja) 1993-09-30 1998-02-10 インターナショナル・ビジネス・マシーンズ・コーポレイション プローブ構造、プローブ構造の形成方法
US5475318A (en) * 1993-10-29 1995-12-12 Robert B. Marcus Microprobe
US5621333A (en) * 1995-05-19 1997-04-15 Microconnect, Inc. Contact device for making connection to an electronic circuit device

Also Published As

Publication number Publication date
JP2001521620A (ja) 2001-11-06
EP0975979B1 (de) 2001-08-22
CN1252129A (zh) 2000-05-03
WO1998045716A1 (fr) 1998-10-15
FR2762140B1 (fr) 2000-01-14
CN1174251C (zh) 2004-11-03
DE69801429T2 (de) 2002-05-16
EP0975979A1 (de) 2000-02-02
US6289583B1 (en) 2001-09-18
FR2762140A1 (fr) 1998-10-16
ATE204650T1 (de) 2001-09-15

Similar Documents

Publication Publication Date Title
DE69801429D1 (de) Verfahren zur herstellung von karten mit mehreren kontaktspitzen zum testen von halbleiterchips
GB1319682A (en) Thin film metallization process for microcircuits
JPS60138918A (ja) 半導体装置の製造方法
JPS6435421A (en) Thin film transistor array
US3689332A (en) Method of producing semiconductor circuits with conductance paths
CN1265027C (zh) 电成型诸孔板用的型芯以及制造该型芯的方法
US3708403A (en) Self-aligning electroplating mask
GB1441781A (en) Electric circuit fabrication
US4564423A (en) Permanent mandrel for making bumped tapes and methods of forming
ATE46791T1 (de) Verfahren zum selektiven auffuellen von in isolationsschichten geaetzten kontaktloechern mit metallisch leitenden materialien bei der herstellung von hoechstintegrierten halbleiterschaltungen sowie eine vorrichtung zur durchfuehrung des verfahrens.
KR970030066A (ko) 전계방출소자 및 그 제조방법
JPS6459936A (en) Manufacture of integrated circuit
KR100479233B1 (ko) 온도 센서 제조 방법
JPS6430228A (en) Manufacture of semiconductor device
WO2004064156A1 (en) Laminate made by electro-forming and method for manufacturing the same
KR970009613B1 (en) Multi-level metalizing method of semiconductor device
KR100503983B1 (ko) 반도체 칩 테스트용의 다수의 접촉팁들을 구비하는 카드의 제조방법
JPS57199238A (en) Manufacture of semiconductor device
JPS5636120A (en) Manufacture of magnetic bubble device
JPH03154214A (ja) 導体パターン形成方法と磁気ヘッドの製造方法
KR960013140B1 (ko) 반도체 소자의 제조 방법
TW358951B (en) Platinum resistor temperature sensor structure and the manufacturing method
JPS6451670A (en) Manufacture of amorphous semiconductor device
KR930006837A (ko) 금속접착층을 이용한 텅스텐 선택증착방법
JPS6412503A (en) Electronic component and manufacture thereof

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: REINHARDT, M., DIPL.-ING.UNIV., PAT.-ANW., 83224 G

8339 Ceased/non-payment of the annual fee