DE69802707T2 - Hitzeschild für eine kristallziehungsvorrichtung - Google Patents

Hitzeschild für eine kristallziehungsvorrichtung

Info

Publication number
DE69802707T2
DE69802707T2 DE69802707T DE69802707T DE69802707T2 DE 69802707 T2 DE69802707 T2 DE 69802707T2 DE 69802707 T DE69802707 T DE 69802707T DE 69802707 T DE69802707 T DE 69802707T DE 69802707 T2 DE69802707 T2 DE 69802707T2
Authority
DE
Germany
Prior art keywords
heat shield
drawing device
crystal drawing
crystal
shield
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69802707T
Other languages
English (en)
Other versions
DE69802707D1 (de
Inventor
L Luter
W Ferry
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69802707D1 publication Critical patent/DE69802707D1/de
Publication of DE69802707T2 publication Critical patent/DE69802707T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
DE69802707T 1997-09-30 1998-09-24 Hitzeschild für eine kristallziehungsvorrichtung Expired - Fee Related DE69802707T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/940,166 US5922127A (en) 1997-09-30 1997-09-30 Heat shield for crystal puller
PCT/US1998/019919 WO1999016939A1 (en) 1997-09-30 1998-09-24 Heat shield for crystal puller

Publications (2)

Publication Number Publication Date
DE69802707D1 DE69802707D1 (de) 2002-01-10
DE69802707T2 true DE69802707T2 (de) 2002-05-08

Family

ID=25474359

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802707T Expired - Fee Related DE69802707T2 (de) 1997-09-30 1998-09-24 Hitzeschild für eine kristallziehungsvorrichtung

Country Status (9)

Country Link
US (2) US5922127A (de)
EP (1) EP1021598B1 (de)
JP (1) JP2001518442A (de)
KR (1) KR20010024278A (de)
CN (1) CN1272146A (de)
DE (1) DE69802707T2 (de)
MY (1) MY116286A (de)
TW (1) TW408197B (de)
WO (1) WO1999016939A1 (de)

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WO1998045509A1 (en) 1997-04-09 1998-10-15 Memc Electronic Materials, Inc. Low defect density silicon
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US6091444A (en) * 1997-11-25 2000-07-18 United States Enrichment Corporation Melt view camera
JP4217844B2 (ja) * 1998-06-18 2009-02-04 ジャパンスーパークォーツ株式会社 複合ルツボとその製造方法および再生方法
DE69901115T2 (de) * 1998-06-26 2002-12-19 Memc Electronic Materials Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
US6312516B2 (en) 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3904832B2 (ja) * 1998-10-14 2007-04-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶成長導入欠陥を実質的に有さないエピタキシャルシリコンウエハ
JP4875800B2 (ja) * 1998-10-14 2012-02-15 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 単結晶シリコンウエハの製造方法
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
TW505710B (en) * 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6197111B1 (en) 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller
KR100378184B1 (ko) * 1999-11-13 2003-03-29 삼성전자주식회사 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러
US6482263B1 (en) * 2000-10-06 2002-11-19 Memc Electronic Materials, Inc. Heat shield assembly for crystal pulling apparatus
US7105050B2 (en) * 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
DE10102126A1 (de) * 2001-01-18 2002-08-22 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zum Herstellen eines Einkristalls aus Silicium
KR100854186B1 (ko) * 2001-01-26 2008-08-26 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 산화 유도된 적층 결함을 실질적으로 포함하지 않는베이컨시 지배 코어를 갖는 낮은 결함 밀도의 실리콘
EP1560950B1 (de) * 2002-11-12 2008-09-17 MEMC Electronic Materials, Inc. Kristallziehvorrichtung und verfahren zur züchtung einer einkristallstange
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JP4730937B2 (ja) * 2004-12-13 2011-07-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 半導体単結晶製造装置および製造方法
JP5138678B2 (ja) 2006-05-19 2013-02-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Ｃｚ成長中のシリコン単結晶側表面から誘起される凝集点欠陥および酸素クラスターの形成制御
US8420928B2 (en) * 2008-02-14 2013-04-16 Ppg Industries Ohio, Inc. Use of photovoltaics for waste heat recovery
KR101137936B1 (ko) * 2009-11-30 2012-05-09 (주)에스테크 잉곳성장장치의 멜트 온도 측정방법 및 그 측정장치
CN102011175A (zh) * 2010-11-30 2011-04-13 江苏华盛天龙光电设备股份有限公司 一种直拉式硅单晶生长炉用导流筒
CN102162123B (zh) * 2011-04-01 2012-11-07 江苏大学 双加热器移动热屏式直拉单晶炉
US8691013B2 (en) 2011-05-09 2014-04-08 Memc Singapore Pte Ltd Feed tool for shielding a portion of a crystal puller
CN102732949A (zh) * 2012-06-21 2012-10-17 芜湖昊阳光能股份有限公司 一种石墨热场的导流筒结构
JP5904079B2 (ja) 2012-10-03 2016-04-13 信越半導体株式会社 シリコン単結晶育成装置及びシリコン単結晶育成方法
KR101435172B1 (ko) * 2012-10-08 2014-09-01 웅진에너지 주식회사 잉곳 성장 장치용 열차단구조체
TWI460319B (zh) * 2012-12-28 2014-11-11 Sino American Silicon Prod Inc 長晶裝置及晶體製造方法
KR101464562B1 (ko) * 2013-01-23 2014-11-24 주식회사 엘지실트론 단결정 잉곳 성장 장치
KR101532266B1 (ko) * 2013-12-03 2015-06-29 주식회사 엘지실트론 단결정 성장 장치
US9657411B2 (en) 2013-01-23 2017-05-23 Lg Siltron Incorporated Single-crystal growth apparatus
TW201435158A (zh) * 2013-03-15 2014-09-16 Saint Gobain Ceramics 帶狀藍寶石以及用以產生複數個具有改良尺寸穩定性之帶狀藍寶石之設備以及方法
KR101494530B1 (ko) * 2013-06-27 2015-02-17 웅진에너지 주식회사 잉곳성장장치의 멜트갭 측정장치 및 측정방법
CN104278320A (zh) * 2013-07-04 2015-01-14 有研新材料股份有限公司 一种用于测量直拉硅单晶炉中硅熔体液面位置的装置
KR101530274B1 (ko) * 2013-08-27 2015-06-23 주식회사 엘지실트론 잉곳성장장치 및 잉곳성장방법
JP6447537B2 (ja) * 2016-02-29 2019-01-09 株式会社Sumco 単結晶の製造方法および製造装置
CN108342770A (zh) * 2017-01-25 2018-07-31 上海新昇半导体科技有限公司 籽晶夹头及单晶提拉炉
CN107130295B (zh) * 2017-04-17 2019-07-09 宜昌南玻硅材料有限公司 一种消除硅芯棒隐裂的装置及方法

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Also Published As

Publication number Publication date
TW408197B (en) 2000-10-11
US5922127A (en) 1999-07-13
DE69802707D1 (de) 2002-01-10
MY116286A (en) 2003-12-31
WO1999016939A1 (en) 1999-04-08
EP1021598B1 (de) 2001-11-28
JP2001518442A (ja) 2001-10-16
US6053974A (en) 2000-04-25
EP1021598A1 (de) 2000-07-26
CN1272146A (zh) 2000-11-01
KR20010024278A (ko) 2001-03-26

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