DE69804672T2 - Verfahren zur selektiven ablagerung ferroelektrischer schichten auf wismut basis - Google Patents
Verfahren zur selektiven ablagerung ferroelektrischer schichten auf wismut basisInfo
- Publication number
- DE69804672T2 DE69804672T2 DE69804672T DE69804672T DE69804672T2 DE 69804672 T2 DE69804672 T2 DE 69804672T2 DE 69804672 T DE69804672 T DE 69804672T DE 69804672 T DE69804672 T DE 69804672T DE 69804672 T2 DE69804672 T2 DE 69804672T2
- Authority
- DE
- Germany
- Prior art keywords
- wismut
- base
- selective deposition
- ferroelectric layers
- ferroelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/04—Coating on selected surface areas, e.g. using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/996,575 US6120846A (en) | 1997-12-23 | 1997-12-23 | Method for the selective deposition of bismuth based ferroelectric thin films by chemical vapor deposition |
PCT/US1998/026656 WO1999032685A1 (en) | 1997-12-23 | 1998-12-16 | Method for selectively depositing bismuth based ferroelectric films |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69804672D1 DE69804672D1 (de) | 2002-05-08 |
DE69804672T2 true DE69804672T2 (de) | 2002-10-10 |
Family
ID=25543073
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69804672T Expired - Fee Related DE69804672T2 (de) | 1997-12-23 | 1998-12-16 | Verfahren zur selektiven ablagerung ferroelektrischer schichten auf wismut basis |
Country Status (7)
Country | Link |
---|---|
US (1) | US6120846A (de) |
EP (1) | EP1042529B1 (de) |
JP (1) | JP2001527282A (de) |
KR (1) | KR20010033553A (de) |
CN (1) | CN1184348C (de) |
DE (1) | DE69804672T2 (de) |
WO (1) | WO1999032685A1 (de) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500489B1 (en) * | 1996-11-27 | 2002-12-31 | Advanced Technology Materials, Inc. | Low temperature CVD processes for preparing ferroelectric films using Bi alcoxides |
US6693318B1 (en) * | 1997-12-18 | 2004-02-17 | Infineon Technologies North America | Reduced diffusion of a mobile specie from a metal oxide ceramic |
JPH11186523A (ja) * | 1997-12-19 | 1999-07-09 | Sharp Corp | 絶縁体材料、絶縁膜被覆基板、その製造方法及びその用途 |
WO2000034550A2 (en) * | 1998-12-09 | 2000-06-15 | Infineon Technologies Ag | Cvd processes using bi aryl |
JP3596416B2 (ja) * | 2000-03-29 | 2004-12-02 | セイコーエプソン株式会社 | セラミックスの製造方法およびその製造装置 |
JP3664033B2 (ja) * | 2000-03-29 | 2005-06-22 | セイコーエプソン株式会社 | セラミックスの製造方法およびその製造装置 |
KR100382149B1 (ko) * | 2000-11-30 | 2003-05-09 | 한국전자통신연구원 | 스트론튬 탄탈륨 산화물 박막 형성 방법 |
US7358121B2 (en) * | 2002-08-23 | 2008-04-15 | Intel Corporation | Tri-gate devices and methods of fabrication |
US7118726B2 (en) | 2002-12-13 | 2006-10-10 | Clark Manufacturing, Llc | Method for making oxide compounds |
KR100513724B1 (ko) * | 2002-12-24 | 2005-09-08 | 삼성전자주식회사 | 강유전성 박막 및 그 제조방법 |
JP2004256510A (ja) * | 2003-02-26 | 2004-09-16 | Toyoshima Seisakusho:Kk | Cvd用ビスマス原料溶液及びこれを用いたビスマス含有薄膜の製造方法 |
US8478645B2 (en) * | 2003-04-07 | 2013-07-02 | Sevenecho, Llc | Method, system and software for digital media narrative personalization |
US6909151B2 (en) * | 2003-06-27 | 2005-06-21 | Intel Corporation | Nonplanar device with stress incorporation layer and method of fabrication |
US7456476B2 (en) | 2003-06-27 | 2008-11-25 | Intel Corporation | Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication |
JP4632018B2 (ja) * | 2003-10-15 | 2011-02-16 | セイコーエプソン株式会社 | 強誘電体膜、強誘電体膜の製造方法、および強誘電体キャパシタ、ならびに強誘電体メモリ |
US7154118B2 (en) | 2004-03-31 | 2006-12-26 | Intel Corporation | Bulk non-planar transistor having strained enhanced mobility and methods of fabrication |
US7042009B2 (en) | 2004-06-30 | 2006-05-09 | Intel Corporation | High mobility tri-gate devices and methods of fabrication |
US7348284B2 (en) | 2004-08-10 | 2008-03-25 | Intel Corporation | Non-planar pMOS structure with a strained channel region and an integrated strained CMOS flow |
US7422946B2 (en) | 2004-09-29 | 2008-09-09 | Intel Corporation | Independently accessed double-gate and tri-gate transistors in same process flow |
US7332439B2 (en) | 2004-09-29 | 2008-02-19 | Intel Corporation | Metal gate transistors with epitaxial source and drain regions |
US20060086977A1 (en) | 2004-10-25 | 2006-04-27 | Uday Shah | Nonplanar device with thinned lower body portion and method of fabrication |
US7518196B2 (en) | 2005-02-23 | 2009-04-14 | Intel Corporation | Field effect transistor with narrow bandgap source and drain regions and method of fabrication |
US20060202266A1 (en) | 2005-03-14 | 2006-09-14 | Marko Radosavljevic | Field effect transistor with metal source/drain regions |
JP4257537B2 (ja) * | 2005-06-02 | 2009-04-22 | セイコーエプソン株式会社 | 強誘電体層の製造方法、電子機器の製造方法、強誘電体メモリ装置の製造方法、圧電素子の製造方法、およびインクジェット式記録ヘッドの製造方法 |
US7858481B2 (en) | 2005-06-15 | 2010-12-28 | Intel Corporation | Method for fabricating transistor with thinned channel |
US7547637B2 (en) | 2005-06-21 | 2009-06-16 | Intel Corporation | Methods for patterning a semiconductor film |
US7279375B2 (en) | 2005-06-30 | 2007-10-09 | Intel Corporation | Block contact architectures for nanoscale channel transistors |
US7402875B2 (en) | 2005-08-17 | 2008-07-22 | Intel Corporation | Lateral undercut of metal gate in SOI device |
US7479421B2 (en) | 2005-09-28 | 2009-01-20 | Intel Corporation | Process for integrating planar and non-planar CMOS transistors on a bulk substrate and article made thereby |
US20070090416A1 (en) | 2005-09-28 | 2007-04-26 | Doyle Brian S | CMOS devices with a single work function gate electrode and method of fabrication |
CN1967749B (zh) * | 2005-11-18 | 2010-05-12 | 同济大学 | 一种非铅铁电薄膜的低温制备方法 |
US7485503B2 (en) | 2005-11-30 | 2009-02-03 | Intel Corporation | Dielectric interface for group III-V semiconductor device |
US8143646B2 (en) | 2006-08-02 | 2012-03-27 | Intel Corporation | Stacking fault and twin blocking barrier for integrating III-V on Si |
US8362566B2 (en) | 2008-06-23 | 2013-01-29 | Intel Corporation | Stress in trigate devices using complimentary gate fill materials |
ITRM20120478A1 (it) | 2012-10-09 | 2014-04-10 | Sicurezza E Ambiente S P A | Autocarro polifunzionale perfezionato atto alla pulizia di aree interessate da incidenti stradali per il rapido ripristino della viabilita' e della sicurezza stradale |
CN107619284B (zh) * | 2017-09-08 | 2020-08-04 | 东华大学 | 一种SiBNC陶瓷泡沫的制备方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5217756A (en) * | 1990-06-08 | 1993-06-08 | Nec Corporation | Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same |
DE4038990C1 (de) * | 1990-12-06 | 1992-04-09 | Siemens Ag, 8000 Muenchen, De | |
JPH07224385A (ja) * | 1994-02-09 | 1995-08-22 | Fujitsu Ltd | 金属薄膜選択気相成長方法 |
US5527567A (en) * | 1994-09-02 | 1996-06-18 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
US5478610A (en) * | 1994-09-02 | 1995-12-26 | Ceram Incorporated | Metalorganic chemical vapor deposition of layered structure oxides |
JP3363301B2 (ja) * | 1995-03-08 | 2003-01-08 | シャープ株式会社 | 強誘電体薄膜被覆基板及びその製造方法及び強誘電体薄膜被覆基板によって構成された不揮発性メモリ |
-
1997
- 1997-12-23 US US08/996,575 patent/US6120846A/en not_active Expired - Lifetime
-
1998
- 1998-12-16 JP JP2000525598A patent/JP2001527282A/ja not_active Withdrawn
- 1998-12-16 CN CNB988137747A patent/CN1184348C/zh not_active Expired - Fee Related
- 1998-12-16 DE DE69804672T patent/DE69804672T2/de not_active Expired - Fee Related
- 1998-12-16 KR KR1020007007062A patent/KR20010033553A/ko not_active Application Discontinuation
- 1998-12-16 EP EP98963936A patent/EP1042529B1/de not_active Expired - Lifetime
- 1998-12-16 WO PCT/US1998/026656 patent/WO1999032685A1/en not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US6120846A (en) | 2000-09-19 |
EP1042529A1 (de) | 2000-10-11 |
KR20010033553A (ko) | 2001-04-25 |
WO1999032685A1 (en) | 1999-07-01 |
JP2001527282A (ja) | 2001-12-25 |
CN1184348C (zh) | 2005-01-12 |
CN1285007A (zh) | 2001-02-21 |
EP1042529B1 (de) | 2002-04-03 |
DE69804672D1 (de) | 2002-05-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |