DE69806133T2 - Hocheffiziente magnetische integrierte miniaturschaltungsstruktur - Google Patents
Hocheffiziente magnetische integrierte miniaturschaltungsstrukturInfo
- Publication number
- DE69806133T2 DE69806133T2 DE69806133T DE69806133T DE69806133T2 DE 69806133 T2 DE69806133 T2 DE 69806133T2 DE 69806133 T DE69806133 T DE 69806133T DE 69806133 T DE69806133 T DE 69806133T DE 69806133 T2 DE69806133 T2 DE 69806133T2
- Authority
- DE
- Germany
- Prior art keywords
- circuit structure
- highly efficient
- miniature circuit
- efficient magnetic
- magnetic integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5607—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using magnetic storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/833,151 US5926414A (en) | 1997-04-04 | 1997-04-04 | High-efficiency miniature magnetic integrated circuit structures |
PCT/US1998/006627 WO1998045846A1 (en) | 1997-04-04 | 1998-04-06 | High-efficiency miniature magnetic integrated circuit structures |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69806133D1 DE69806133D1 (de) | 2002-07-25 |
DE69806133T2 true DE69806133T2 (de) | 2003-01-02 |
Family
ID=25263579
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69806133T Expired - Fee Related DE69806133T2 (de) | 1997-04-04 | 1998-04-06 | Hocheffiziente magnetische integrierte miniaturschaltungsstruktur |
Country Status (5)
Country | Link |
---|---|
US (1) | US5926414A (de) |
EP (1) | EP0972287B1 (de) |
JP (1) | JP2001519092A (de) |
DE (1) | DE69806133T2 (de) |
WO (1) | WO1998045846A1 (de) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7050329B2 (en) * | 1995-04-21 | 2006-05-23 | Johnson Mark B | Magnetic spin based memory with inductive write lines |
US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
US6051441A (en) * | 1998-05-12 | 2000-04-18 | Plumeria Investments, Inc. | High-efficiency miniature magnetic integrated circuit structures |
US6140139A (en) * | 1998-12-22 | 2000-10-31 | Pageant Technologies, Inc. | Hall effect ferromagnetic random access memory device and its method of manufacture |
US6288929B1 (en) | 1999-03-04 | 2001-09-11 | Pageant Technologies, Inc. | Magneto resistor sensor with differential collectors for a non-volatile random access ferromagnetic memory |
US6266267B1 (en) * | 1999-03-04 | 2001-07-24 | Pageant Technologies, Inc. | Single conductor inductive sensor for a non-volatile random access ferromagnetic memory |
US6330183B1 (en) | 1999-03-04 | 2001-12-11 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory |
US6229729B1 (en) | 1999-03-04 | 2001-05-08 | Pageant Technologies, Inc. (Micromem Technologies, Inc.) | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
WO2000052698A1 (en) * | 1999-03-04 | 2000-09-08 | Pageant Technologies (Usa), Inc. | Dual conductor inductive sensor for a non-volatile random access ferromagnetic memory |
WO2000052700A1 (en) * | 1999-03-04 | 2000-09-08 | Pageant Technologies (Usa), Inc. | A non-volatile random access ferromagnetic memory with single collector sensor |
US6317354B1 (en) | 1999-03-04 | 2001-11-13 | Pageant Technologies, Inc. | Non-volatile random access ferromagnetic memory with single collector sensor |
WO2000052699A1 (en) * | 1999-03-04 | 2000-09-08 | Pageant Technologies (Usa), Inc. | Magneto resistor sensor with diode short for a non-volatile random access ferromagnetic memory |
WO2001067459A1 (en) * | 2000-03-09 | 2001-09-13 | Lienau Richard M | Method and apparatus for reading data from a ferromagnetic memory cell |
US6307774B1 (en) * | 2000-03-22 | 2001-10-23 | Mark B. Johnson | Magnetoelectronic memory array |
US6215707B1 (en) * | 2000-04-10 | 2001-04-10 | Motorola Inc. | Charge conserving write method and system for an MRAM |
US6249453B1 (en) * | 2000-04-18 | 2001-06-19 | The University Of Chicago | Voltage controlled spintronic devices for logic applications |
US6313487B1 (en) | 2000-06-15 | 2001-11-06 | Board Of Regents, The University Of Texas System | Vertical channel floating gate transistor having silicon germanium channel layer |
AU2001269828A1 (en) * | 2000-06-15 | 2001-12-24 | Estancia Limited | Non-volatile ferromagnetic memory having sensor circuitry shared with its state change circuitry |
US6313486B1 (en) | 2000-06-15 | 2001-11-06 | Board Of Regents, The University Of Texas System | Floating gate transistor having buried strained silicon germanium channel layer |
US6621100B2 (en) * | 2000-10-27 | 2003-09-16 | The Ohio State University | Polymer-, organic-, and molecular-based spintronic devices |
TW555681B (en) * | 2001-07-31 | 2003-10-01 | Inventio Ag | Lift installation with equipment for ascertaining the cage position |
US6430084B1 (en) * | 2001-08-27 | 2002-08-06 | Motorola, Inc. | Magnetic random access memory having digit lines and bit lines with a ferromagnetic cladding layer |
DE10144268B4 (de) * | 2001-09-08 | 2015-03-05 | Robert Bosch Gmbh | Vorrichtung zur Messung der Stärke einer Vektorkomponente eines Magnetfeldes |
JP3757143B2 (ja) | 2001-10-11 | 2006-03-22 | 富士通株式会社 | 半導体装置の製造方法及び半導体装置 |
US6549447B1 (en) | 2001-10-31 | 2003-04-15 | Peter Fricke | Memory cell structure |
US6879525B2 (en) * | 2001-10-31 | 2005-04-12 | Hewlett-Packard Development Company, L.P. | Feedback write method for programmable memory |
US6559511B1 (en) * | 2001-11-13 | 2003-05-06 | Motorola, Inc. | Narrow gap cladding field enhancement for low power programming of a MRAM device |
JP4247085B2 (ja) | 2003-09-29 | 2009-04-02 | 株式会社東芝 | 磁気記憶装置およびその製造方法 |
US7906170B2 (en) * | 2007-03-27 | 2011-03-15 | Intel Corporation | Apparatus, method, and system capable of producing a moveable magnetic field |
KR100862183B1 (ko) * | 2007-06-29 | 2008-10-09 | 고려대학교 산학협력단 | 강자성 물질의 도메인 구조 및 다중 상태를 이용한 자기기억 소자 |
US8614873B1 (en) | 2010-04-16 | 2013-12-24 | James T. Beran | Varying electrical current and/or conductivity in electrical current channels |
US9666257B2 (en) * | 2015-04-24 | 2017-05-30 | Intel Corporation | Bitcell state retention |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA717658A (en) * | 1965-09-07 | Abd-El-Rahman Shahbender Rabah | Array of magnetic elements | |
GB905625A (en) * | 1958-12-24 | 1962-09-12 | Internat Computers & Tabulator | Improvements in or relating to magnetic data storage devices |
US3223985A (en) * | 1961-10-25 | 1965-12-14 | Burroughs Corp | Nondestructive magnetic data store |
US3418645A (en) * | 1964-07-30 | 1968-12-24 | Burroughs Corp | Magnetic data store with radio-frequency nondestructive readout |
US3466634A (en) * | 1966-08-04 | 1969-09-09 | Ibm | Thin film microwave absorption structure |
US3613013A (en) * | 1966-12-07 | 1971-10-12 | Itt | Memory system |
US3714523A (en) * | 1971-03-30 | 1973-01-30 | Texas Instruments Inc | Magnetic field sensor |
US3727199A (en) * | 1971-04-20 | 1973-04-10 | Signals Galaxies Inc | Static magnetic memory system |
US4283643A (en) * | 1979-05-25 | 1981-08-11 | Electric Power Research Institute, Inc. | Hall sensing apparatus |
CH659896A5 (de) * | 1982-11-22 | 1987-02-27 | Landis & Gyr Ag | Magnetfeldsensor. |
US4791604A (en) * | 1984-02-15 | 1988-12-13 | Joseph J. Bednarz | Sheet random access memory |
US4803658A (en) * | 1987-01-15 | 1989-02-07 | Westinghouse Electric Corp. | Cross tie random access memory |
US4887236A (en) * | 1987-05-29 | 1989-12-12 | Raytheon Company | Non-volatile, radiation-hard, random-access memory |
US4831427A (en) * | 1987-07-23 | 1989-05-16 | Texas Instruments Incorporated | Ferromagnetic gate memory |
US5075247A (en) * | 1990-01-18 | 1991-12-24 | Microunity Systems Engineering, Inc. | Method of making hall effect semiconductor memory cell |
US5068826A (en) * | 1990-01-18 | 1991-11-26 | Microunity Systems Engineering | Hall effect semiconductor memory cell |
US5107460A (en) * | 1990-01-18 | 1992-04-21 | Microunity Systems Engineering, Inc. | Spatial optical modulator |
US5089991A (en) * | 1990-01-18 | 1992-02-18 | Micro Unity Systems Engineering, Inc. | Non-volatile memory cell |
US5329480A (en) * | 1990-11-15 | 1994-07-12 | California Institute Of Technology | Nonvolatile random access memory |
US5208477A (en) * | 1990-12-31 | 1993-05-04 | The United States Of America As Represented By The Secretary Of The Navy | Resistive gate magnetic field sensor |
US5329486A (en) * | 1992-04-24 | 1994-07-12 | Motorola, Inc. | Ferromagnetic memory device |
US5289410A (en) * | 1992-06-29 | 1994-02-22 | California Institute Of Technology | Non-volatile magnetic random access memory |
US5295097A (en) * | 1992-08-05 | 1994-03-15 | Lienau Richard M | Nonvolatile random access memory |
US5489846A (en) * | 1994-08-03 | 1996-02-06 | United Microelectronics Corp. | Magnetic-field sensor with split-drain MOSFETS |
US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
-
1997
- 1997-04-04 US US08/833,151 patent/US5926414A/en not_active Expired - Fee Related
-
1998
- 1998-04-06 EP EP98915272A patent/EP0972287B1/de not_active Expired - Lifetime
- 1998-04-06 WO PCT/US1998/006627 patent/WO1998045846A1/en active IP Right Grant
- 1998-04-06 JP JP54293098A patent/JP2001519092A/ja active Pending
- 1998-04-06 DE DE69806133T patent/DE69806133T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
WO1998045846A1 (en) | 1998-10-15 |
JP2001519092A (ja) | 2001-10-16 |
DE69806133D1 (de) | 2002-07-25 |
EP0972287B1 (de) | 2002-06-19 |
EP0972287A4 (de) | 2000-09-13 |
US5926414A (en) | 1999-07-20 |
EP0972287A1 (de) | 2000-01-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |