DE69810897D1 - Befehlsignalgenerator für speicheranordnungen - Google Patents

Befehlsignalgenerator für speicheranordnungen

Info

Publication number
DE69810897D1
DE69810897D1 DE69810897T DE69810897T DE69810897D1 DE 69810897 D1 DE69810897 D1 DE 69810897D1 DE 69810897 T DE69810897 T DE 69810897T DE 69810897 T DE69810897 T DE 69810897T DE 69810897 D1 DE69810897 D1 DE 69810897D1
Authority
DE
Germany
Prior art keywords
counter
command signals
clock
speed
command
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69810897T
Other languages
English (en)
Other versions
DE69810897T2 (de
Inventor
A Manning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69810897D1 publication Critical patent/DE69810897D1/de
Application granted granted Critical
Publication of DE69810897T2 publication Critical patent/DE69810897T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076Timing circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
DE69810897T 1997-02-11 1998-02-11 Befehlsignalgenerator für speicheranordnungen Expired - Lifetime DE69810897T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/798,229 US6230245B1 (en) 1997-02-11 1997-02-11 Method and apparatus for generating a variable sequence of memory device command signals
PCT/US1998/002237 WO1998035355A1 (en) 1997-02-11 1998-02-11 Memory device command signal generator

Publications (2)

Publication Number Publication Date
DE69810897D1 true DE69810897D1 (de) 2003-02-27
DE69810897T2 DE69810897T2 (de) 2003-11-20

Family

ID=25172863

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69810897T Expired - Lifetime DE69810897T2 (de) 1997-02-11 1998-02-11 Befehlsignalgenerator für speicheranordnungen

Country Status (8)

Country Link
US (2) US6230245B1 (de)
EP (1) EP0958578B1 (de)
JP (1) JP3804990B2 (de)
KR (1) KR100495201B1 (de)
AT (1) ATE231647T1 (de)
AU (1) AU6146498A (de)
DE (1) DE69810897T2 (de)
WO (1) WO1998035355A1 (de)

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Also Published As

Publication number Publication date
EP0958578B1 (de) 2003-01-22
DE69810897T2 (de) 2003-11-20
ATE231647T1 (de) 2003-02-15
KR100495201B1 (ko) 2005-06-14
US20030070037A1 (en) 2003-04-10
JP3804990B2 (ja) 2006-08-02
WO1998035355A1 (en) 1998-08-13
US6230245B1 (en) 2001-05-08
EP0958578A1 (de) 1999-11-24
JP2002513496A (ja) 2002-05-08
US6708262B2 (en) 2004-03-16
AU6146498A (en) 1998-08-26
KR20000070999A (ko) 2000-11-25

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