DE69813041T2 - Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte - Google Patents

Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte Download PDF

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Publication number
DE69813041T2
DE69813041T2 DE69813041T DE69813041T DE69813041T2 DE 69813041 T2 DE69813041 T2 DE 69813041T2 DE 69813041 T DE69813041 T DE 69813041T DE 69813041 T DE69813041 T DE 69813041T DE 69813041 T2 DE69813041 T2 DE 69813041T2
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Germany
Prior art keywords
dominating
silicon
cut
defect density
low defect
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Expired - Lifetime
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DE69813041T
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English (en)
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DE69813041D1 (de
Inventor
Robert Falster
Steve A Markgraf
Seamus A Mcquaid
Joseph C Holzer
Paolo Mutti
Bayard K Johnson
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SunEdison Inc
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SunEdison Inc
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    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/06Silicon
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14Heating of the melt or the crystallised materials
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/203Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20Controlling or regulating
    • C30B15/206Controlling or regulating the thermal history of growing the ingot
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1004Apparatus with means for measuring, testing, or sensing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/21Circular sheet or circular blank
DE69813041T 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte Expired - Lifetime DE69813041T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4184597P 1997-04-09 1997-04-09

Publications (2)

Publication Number Publication Date
DE69813041D1 DE69813041D1 (de) 2003-05-08
DE69813041T2 true DE69813041T2 (de) 2004-01-15

Family

ID=21918645

Family Applications (7)

Application Number Title Priority Date Filing Date
DE69801903T Expired - Lifetime DE69801903T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes silicium mit niedriger fehlerdichte
DE69824647T Expired - Lifetime DE69824647T2 (de) 1997-04-09 1998-04-09 Silicium mit niedriger Fehlerdichte
DE69813041T Expired - Lifetime DE69813041T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69807676T Expired - Lifetime DE69807676T2 (de) 1997-04-09 1998-04-09 Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
DE69840690T Expired - Lifetime DE69840690D1 (de) 1997-04-09 1998-04-09 Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte
DE69831618T Expired - Lifetime DE69831618T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69806137T Expired - Lifetime DE69806137T2 (de) 1997-04-09 1998-04-09 Silizium mit niedriger defektdichte

Family Applications Before (2)

Application Number Title Priority Date Filing Date
DE69801903T Expired - Lifetime DE69801903T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes silicium mit niedriger fehlerdichte
DE69824647T Expired - Lifetime DE69824647T2 (de) 1997-04-09 1998-04-09 Silicium mit niedriger Fehlerdichte

Family Applications After (4)

Application Number Title Priority Date Filing Date
DE69807676T Expired - Lifetime DE69807676T2 (de) 1997-04-09 1998-04-09 Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
DE69840690T Expired - Lifetime DE69840690D1 (de) 1997-04-09 1998-04-09 Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte
DE69831618T Expired - Lifetime DE69831618T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69806137T Expired - Lifetime DE69806137T2 (de) 1997-04-09 1998-04-09 Silizium mit niedriger defektdichte

Country Status (10)

Country Link
US (11) US5919302A (de)
EP (7) EP0972094B1 (de)
JP (9) JP3449730B2 (de)
KR (6) KR20010006182A (de)
CN (7) CN1280455C (de)
DE (7) DE69801903T2 (de)
MY (6) MY127584A (de)
SG (3) SG105510A1 (de)
TW (3) TW577939B (de)
WO (3) WO1998045509A1 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
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SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
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CN1854353A (zh) 2006-11-01
US5919302A (en) 1999-07-06
EP0973963A1 (de) 2000-01-26
CN1280454C (zh) 2006-10-18
JP4477569B2 (ja) 2010-06-09
JP3544676B2 (ja) 2004-07-21
US6287380B1 (en) 2001-09-11
MY132874A (en) 2007-10-31
EP1273684A3 (de) 2003-11-26
DE69801903D1 (de) 2001-11-08
DE69806137D1 (de) 2002-07-25
JP2001500468A (ja) 2001-01-16
MY127584A (en) 2006-12-29
US6605150B2 (en) 2003-08-12
US6638357B2 (en) 2003-10-28
KR20050049561A (ko) 2005-05-25
CN100595351C (zh) 2010-03-24
CN1255169A (zh) 2000-05-31
WO1998045509A1 (en) 1998-10-15
JP2004155655A (ja) 2004-06-03
EP1273684A2 (de) 2003-01-08
SG165151A1 (en) 2010-10-28
DE69840690D1 (de) 2009-05-07
JP2006062960A (ja) 2006-03-09

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