DE69813041T2 - Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte - Google Patents
Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte Download PDFInfo
- Publication number
- DE69813041T2 DE69813041T2 DE69813041T DE69813041T DE69813041T2 DE 69813041 T2 DE69813041 T2 DE 69813041T2 DE 69813041 T DE69813041 T DE 69813041T DE 69813041 T DE69813041 T DE 69813041T DE 69813041 T2 DE69813041 T2 DE 69813041T2
- Authority
- DE
- Germany
- Prior art keywords
- dominating
- silicon
- cut
- defect density
- low defect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US4184597P | 1997-04-09 | 1997-04-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69813041D1 DE69813041D1 (de) | 2003-05-08 |
DE69813041T2 true DE69813041T2 (de) | 2004-01-15 |
Family
ID=21918645
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801903T Expired - Lifetime DE69801903T2 (de) | 1997-04-09 | 1998-04-09 | Freistellenbeherrschendes silicium mit niedriger fehlerdichte |
DE69824647T Expired - Lifetime DE69824647T2 (de) | 1997-04-09 | 1998-04-09 | Silicium mit niedriger Fehlerdichte |
DE69813041T Expired - Lifetime DE69813041T2 (de) | 1997-04-09 | 1998-04-09 | Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte |
DE69807676T Expired - Lifetime DE69807676T2 (de) | 1997-04-09 | 1998-04-09 | Selbstinterstitiell dominiertes silizium mit niedriger defektdichte |
DE69840690T Expired - Lifetime DE69840690D1 (de) | 1997-04-09 | 1998-04-09 | Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte |
DE69831618T Expired - Lifetime DE69831618T2 (de) | 1997-04-09 | 1998-04-09 | Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte |
DE69806137T Expired - Lifetime DE69806137T2 (de) | 1997-04-09 | 1998-04-09 | Silizium mit niedriger defektdichte |
Family Applications Before (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801903T Expired - Lifetime DE69801903T2 (de) | 1997-04-09 | 1998-04-09 | Freistellenbeherrschendes silicium mit niedriger fehlerdichte |
DE69824647T Expired - Lifetime DE69824647T2 (de) | 1997-04-09 | 1998-04-09 | Silicium mit niedriger Fehlerdichte |
Family Applications After (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69807676T Expired - Lifetime DE69807676T2 (de) | 1997-04-09 | 1998-04-09 | Selbstinterstitiell dominiertes silizium mit niedriger defektdichte |
DE69840690T Expired - Lifetime DE69840690D1 (de) | 1997-04-09 | 1998-04-09 | Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte |
DE69831618T Expired - Lifetime DE69831618T2 (de) | 1997-04-09 | 1998-04-09 | Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte |
DE69806137T Expired - Lifetime DE69806137T2 (de) | 1997-04-09 | 1998-04-09 | Silizium mit niedriger defektdichte |
Country Status (10)
Country | Link |
---|---|
US (11) | US5919302A (de) |
EP (7) | EP0972094B1 (de) |
JP (9) | JP3449730B2 (de) |
KR (6) | KR20010006182A (de) |
CN (7) | CN1280455C (de) |
DE (7) | DE69801903T2 (de) |
MY (6) | MY127584A (de) |
SG (3) | SG105510A1 (de) |
TW (3) | TW577939B (de) |
WO (3) | WO1998045509A1 (de) |
Families Citing this family (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6485807B1 (en) | 1997-02-13 | 2002-11-26 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects, and methods of preparing the same |
US6503594B2 (en) | 1997-02-13 | 2003-01-07 | Samsung Electronics Co., Ltd. | Silicon wafers having controlled distribution of defects and slip |
US6045610A (en) * | 1997-02-13 | 2000-04-04 | Samsung Electronics Co., Ltd. | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance |
SG64470A1 (en) | 1997-02-13 | 1999-04-27 | Samsung Electronics Co Ltd | Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby |
US5994761A (en) * | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
US6379642B1 (en) * | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
CN1280455C (zh) * | 1997-04-09 | 2006-10-18 | Memc电子材料有限公司 | 低缺陷浓度的硅 |
DE69841714D1 (de) | 1997-04-09 | 2010-07-22 | Memc Electronic Materials | Silicium mit niedriger Fehlerdichte und idealem Sauerstoffniederschlag |
JPH1179889A (ja) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ |
WO1999010570A1 (fr) * | 1997-08-26 | 1999-03-04 | Sumitomo Metal Industries, Ltd. | Cristal unique de silicium de grande qualite et procede de fabrication |
US6340392B1 (en) | 1997-10-24 | 2002-01-22 | Samsung Electronics Co., Ltd. | Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface |
JP3346249B2 (ja) * | 1997-10-30 | 2002-11-18 | 信越半導体株式会社 | シリコンウエーハの熱処理方法及びシリコンウエーハ |
JP3407629B2 (ja) * | 1997-12-17 | 2003-05-19 | 信越半導体株式会社 | シリコン単結晶ウエーハの熱処理方法ならびにシリコン単結晶ウエーハ |
JP3955375B2 (ja) * | 1998-01-19 | 2007-08-08 | 信越半導体株式会社 | シリコン単結晶の製造方法およびシリコン単結晶ウエーハ |
JPH11349393A (ja) * | 1998-06-03 | 1999-12-21 | Shin Etsu Handotai Co Ltd | シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法 |
JP3943717B2 (ja) | 1998-06-11 | 2007-07-11 | 信越半導体株式会社 | シリコン単結晶ウエーハ及びその製造方法 |
CN1326518A (zh) | 1998-06-26 | 2001-12-12 | Memc电子材料有限公司 | 任意大直径无缺陷硅晶体的生长方法 |
KR100816696B1 (ko) * | 1998-09-02 | 2008-03-27 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 개선된 내부 게터링을 갖는 열어닐된 웨이퍼 |
CN1155064C (zh) | 1998-09-02 | 2004-06-23 | Memc电子材料有限公司 | 制备理想析氧硅晶片的工艺 |
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EP1133590B1 (de) | 1998-10-14 | 2003-12-17 | MEMC Electronic Materials, Inc. | Im wesentlichen defektfreie epitaktische siliziumscheiben |
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