DE69818267D1 - Reflektierende fläche für wände von cvd-reaktoren - Google Patents

Reflektierende fläche für wände von cvd-reaktoren

Info

Publication number
DE69818267D1
DE69818267D1 DE69818267T DE69818267T DE69818267D1 DE 69818267 D1 DE69818267 D1 DE 69818267D1 DE 69818267 T DE69818267 T DE 69818267T DE 69818267 T DE69818267 T DE 69818267T DE 69818267 D1 DE69818267 D1 DE 69818267D1
Authority
DE
Germany
Prior art keywords
reflective surface
cvd reactor
reactor walls
walls
cvd
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69818267T
Other languages
English (en)
Other versions
DE69818267T2 (de
Inventor
Aage Olsen
W Halpin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Semiconductor Materials America Inc
Original Assignee
Advanced Semiconductor Materials America Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Semiconductor Materials America Inc filed Critical Advanced Semiconductor Materials America Inc
Application granted granted Critical
Publication of DE69818267D1 publication Critical patent/DE69818267D1/de
Publication of DE69818267T2 publication Critical patent/DE69818267T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • G02B5/0215—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having a regular structure
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • C30B31/12—Heating of the reaction chamber
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • G02B5/0221—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures the surface having an irregular structure
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0268—Diffusing elements; Afocal elements characterized by the fabrication or manufacturing method
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0273—Diffusing elements; Afocal elements characterized by the use
    • G02B5/0284—Diffusing elements; Afocal elements characterized by the use used in reflection
DE69818267T 1997-07-11 1998-07-09 Reflektierende fläche für wände von cvd-reaktoren Expired - Fee Related DE69818267T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5236997P 1997-07-11 1997-07-11
US52369P 1997-07-11
PCT/US1998/014303 WO1999002757A1 (en) 1997-07-11 1998-07-09 Reflective surface for cvd reactor walls

Publications (2)

Publication Number Publication Date
DE69818267D1 true DE69818267D1 (de) 2003-10-23
DE69818267T2 DE69818267T2 (de) 2004-04-08

Family

ID=21977168

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69818267T Expired - Fee Related DE69818267T2 (de) 1997-07-11 1998-07-09 Reflektierende fläche für wände von cvd-reaktoren

Country Status (6)

Country Link
US (2) US6021152A (de)
EP (1) EP0996767B1 (de)
JP (1) JP2001509642A (de)
KR (2) KR100692219B1 (de)
DE (1) DE69818267T2 (de)
WO (1) WO1999002757A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3547591B2 (ja) * 1997-07-29 2004-07-28 アルプス電気株式会社 反射体および反射型液晶表示装置
US6143079A (en) * 1998-11-19 2000-11-07 Asm America, Inc. Compact process chamber for improved process uniformity
US6771895B2 (en) * 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6228174B1 (en) * 1999-03-26 2001-05-08 Ichiro Takahashi Heat treatment system using ring-shaped radiation heater elements
US6181727B1 (en) * 1999-04-19 2001-01-30 General Electric Company Coating for reducing operating temperatures of chamber components of a coating apparatus
US6554905B1 (en) * 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
US6331212B1 (en) * 2000-04-17 2001-12-18 Avansys, Llc Methods and apparatus for thermally processing wafers
US6600138B2 (en) * 2001-04-17 2003-07-29 Mattson Technology, Inc. Rapid thermal processing system for integrated circuits
JP3798721B2 (ja) 2002-03-29 2006-07-19 東芝セラミックス株式会社 半導体熱処理用反射板およびこの半導体熱処理用反射板の製造方法
US6879777B2 (en) 2002-10-03 2005-04-12 Asm America, Inc. Localized heating of substrates using optics
US6720531B1 (en) 2002-12-11 2004-04-13 Asm America, Inc. Light scattering process chamber walls
WO2004072323A2 (en) * 2003-02-07 2004-08-26 Solaicx High reflectivity atmospheric pressure furnace for preventing contamination of a work piece
JP4370180B2 (ja) * 2004-02-03 2009-11-25 オリンパス株式会社 化粧板加工方法
US20050217569A1 (en) * 2004-04-01 2005-10-06 Nirmal Ramaswamy Methods of depositing an elemental silicon-comprising material over a semiconductor substrate and methods of cleaning an internal wall of a chamber
US20050217585A1 (en) * 2004-04-01 2005-10-06 Blomiley Eric R Substrate susceptor for receiving a substrate to be deposited upon
US20050223985A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses, methods of assessing the temperature of semiconductor wafer substrates within deposition apparatuses, and methods for deposition of epitaxial semiconductive material
US20050223993A1 (en) * 2004-04-08 2005-10-13 Blomiley Eric R Deposition apparatuses; methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatuses
DE102005010005A1 (de) * 2005-03-04 2006-12-28 Nunner, Dieter Vorrichtung und Verfahren zur Beschichtung von Kleinteilen
JP2008071787A (ja) 2006-09-12 2008-03-27 Ushio Inc 光照射式加熱装置および光照射式加熱方法
JP2009164525A (ja) * 2008-01-10 2009-07-23 Dainippon Screen Mfg Co Ltd 熱処理装置
WO2009120859A1 (en) * 2008-03-26 2009-10-01 Gt Solar, Inc. Gold-coated polysilicon reactor system and method
US10000965B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductive coating technology
US10000411B2 (en) 2010-01-16 2018-06-19 Cardinal Cg Company Insulating glass unit transparent conductivity and low emissivity coating technology
US10060180B2 (en) 2010-01-16 2018-08-28 Cardinal Cg Company Flash-treated indium tin oxide coatings, production methods, and insulating glass unit transparent conductive coating technology
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
JP5807522B2 (ja) * 2011-11-17 2015-11-10 信越半導体株式会社 エピタキシャル成長装置
US9581042B2 (en) 2012-10-30 2017-02-28 United Technologies Corporation Composite article having metal-containing layer with phase-specific seed particles and method therefor
US9532401B2 (en) * 2013-03-15 2016-12-27 Applied Materials, Inc. Susceptor support shaft with uniformity tuning lenses for EPI process
TWI615503B (zh) * 2013-11-26 2018-02-21 應用材料股份有限公司 用於減少快速熱處理的污染之影響的設備
US11015244B2 (en) 2013-12-30 2021-05-25 Advanced Material Solutions, Llc Radiation shielding for a CVD reactor
US10450649B2 (en) 2014-01-29 2019-10-22 Gtat Corporation Reactor filament assembly with enhanced misalignment tolerance
EP3105509B1 (de) 2014-02-07 2020-08-05 United Technologies Corporation Brennkammer mit mehrlagig beschichtetem panel und herstellungsverfahren für artikel mit mehrlagiger beschichtung
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
TWI686100B (zh) * 2014-11-28 2020-02-21 日商日本碍子股份有限公司 紅外線加熱器及紅外線處理裝置
WO2017040623A1 (en) 2015-09-01 2017-03-09 Silcotek Corp. Thermal chemical vapor deposition coating
US20170194162A1 (en) * 2016-01-05 2017-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor manufacturing equipment and method for treating wafer
US10727094B2 (en) 2016-01-29 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd Thermal reflector device for semiconductor fabrication tool
JP6899721B2 (ja) * 2016-07-22 2021-07-07 日東電工株式会社 偏光板の製造方法およびその製造装置
JP6296189B1 (ja) * 2016-10-31 2018-03-20 日新イオン機器株式会社 加熱装置、半導体製造装置
US11621180B2 (en) 2016-10-31 2023-04-04 Nissin Ion Equipment Co., Ltd. Heating device
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process
US11222794B2 (en) * 2018-03-30 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd Semiconductor fabrication system embedded with effective baking module
US11028012B2 (en) 2018-10-31 2021-06-08 Cardinal Cg Company Low solar heat gain coatings, laminated glass assemblies, and methods of producing same
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
US11032945B2 (en) * 2019-07-12 2021-06-08 Applied Materials, Inc. Heat shield assembly for an epitaxy chamber

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH589306A5 (de) * 1975-06-27 1977-06-30 Bbc Brown Boveri & Cie
DE2732947C3 (de) * 1977-07-21 1981-11-26 Metallgesellschaft Ag, 6000 Frankfurt Verfahren zur Herstellung von Reflektorblechen
JPS58123478U (ja) * 1982-02-15 1983-08-22 日産自動車株式会社 受光型表示装置の照明装置
US5243620A (en) * 1982-08-10 1993-09-07 Wisotzki Juergen High power reflectors for laser technology
JPS6276744A (ja) * 1985-09-30 1987-04-08 Narumi China Corp 集積回路用容器
US4789771A (en) * 1985-10-07 1988-12-06 Epsilon Limited Partnership Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus
US4863757A (en) * 1987-02-06 1989-09-05 Key-Tech, Inc. Printed circuit board
US4755654A (en) * 1987-03-26 1988-07-05 Crowley John L Semiconductor wafer heating chamber
US4823735A (en) * 1987-05-12 1989-04-25 Gemini Research, Inc. Reflector apparatus for chemical vapor deposition reactors
US4975561A (en) * 1987-06-18 1990-12-04 Epsilon Technology Inc. Heating system for substrates
US4839522A (en) * 1987-07-29 1989-06-13 American Screen Printing Company Reflective method and apparatus for curing ink
US4912613A (en) * 1989-02-27 1990-03-27 Mdt Corporation Cover lens for light
US5053247A (en) * 1989-02-28 1991-10-01 Moore Epitaxial, Inc. Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby
US5156820A (en) * 1989-05-15 1992-10-20 Rapro Technology, Inc. Reaction chamber with controlled radiant energy heating and distributed reactant flow
JPH03276625A (ja) * 1990-03-26 1991-12-06 Toshiba Corp 半導体装置の製造装置
JPH07297181A (ja) * 1994-04-20 1995-11-10 Sony Corp 熱酸化処理方法及び熱酸化処理装置
DE4414391C2 (de) * 1994-04-26 2001-02-01 Steag Rtp Systems Gmbh Verfahren für wellenvektorselektive Pyrometrie in Schnellheizsystemen
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
JP3429101B2 (ja) * 1995-02-28 2003-07-22 信越半導体株式会社 バレル型気相成長装置
DE29620783U1 (de) * 1996-12-01 1997-05-22 Mirtsch Frank Prof Dr Reflektor

Also Published As

Publication number Publication date
DE69818267T2 (de) 2004-04-08
US6319556B1 (en) 2001-11-20
US6021152A (en) 2000-02-01
EP0996767B1 (de) 2003-09-17
KR20060011895A (ko) 2006-02-03
KR20010021744A (ko) 2001-03-15
EP0996767A1 (de) 2000-05-03
KR100692219B1 (ko) 2007-03-12
JP2001509642A (ja) 2001-07-24
WO1999002757A1 (en) 1999-01-21
KR100606386B1 (ko) 2006-07-28

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