DE69837124D1 - Abscheidungsverfahren von einer mit Halogen dotierten Si02-Schicht - Google Patents
Abscheidungsverfahren von einer mit Halogen dotierten Si02-SchichtInfo
- Publication number
- DE69837124D1 DE69837124D1 DE69837124T DE69837124T DE69837124D1 DE 69837124 D1 DE69837124 D1 DE 69837124D1 DE 69837124 T DE69837124 T DE 69837124T DE 69837124 T DE69837124 T DE 69837124T DE 69837124 D1 DE69837124 D1 DE 69837124D1
- Authority
- DE
- Germany
- Prior art keywords
- halogen
- layer
- deposition method
- doped sio
- doped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/837,641 US6077764A (en) | 1997-04-21 | 1997-04-21 | Process for depositing high deposition rate halogen-doped silicon oxide layer |
| US837641 | 1997-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69837124D1 true DE69837124D1 (de) | 2007-04-05 |
| DE69837124T2 DE69837124T2 (de) | 2009-08-20 |
Family
ID=25275037
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69837124T Expired - Fee Related DE69837124T2 (de) | 1997-04-21 | 1998-04-17 | Abscheidungsverfahren von einer mit Halogen dotierten Si02-Schicht |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6077764A (de) |
| EP (1) | EP0874391B1 (de) |
| JP (1) | JP4323583B2 (de) |
| KR (1) | KR100550419B1 (de) |
| DE (1) | DE69837124T2 (de) |
| TW (1) | TW380286B (de) |
Families Citing this family (70)
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| US6340435B1 (en) * | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
| JP3818561B2 (ja) | 1998-10-29 | 2006-09-06 | エルジー フィリップス エルシーディー カンパニー リミテッド | シリコン酸化膜の成膜方法および薄膜トランジスタの製造方法 |
| JP3184177B2 (ja) | 1999-03-26 | 2001-07-09 | キヤノン販売株式会社 | 層間絶縁膜の形成方法、半導体製造装置、及び半導体装置 |
| US6559076B1 (en) | 1999-08-19 | 2003-05-06 | Micron Technology, Inc. | Method of removing free halogen from a halogenated polymer insulating layer of a semiconductor device |
| US6346476B1 (en) * | 1999-09-27 | 2002-02-12 | Taiwan Semiconductor Manufacturing Company | Method for enhancing line-to-line capacitance uniformity of plasma enhanced chemical vapor deposited (PECVD) inter-metal dielectric (IMD) layers |
| US6207590B1 (en) * | 1999-11-19 | 2001-03-27 | Wafertech, Inc. | Method for deposition of high stress silicon dioxide using silane based dual frequency PECVD process |
| CN1221017C (zh) * | 1999-11-30 | 2005-09-28 | 英特尔公司 | 改进的氟掺杂二氧化硅薄膜 |
| US6541400B1 (en) * | 2000-02-09 | 2003-04-01 | Novellus Systems, Inc. | Process for CVD deposition of fluorinated silicon glass layer on semiconductor wafer |
| US6221793B1 (en) * | 2000-03-01 | 2001-04-24 | Advanced Micro Devices, Inc. | Process for forming PECVD undoped oxide with a super low deposition rate on a single state deposition |
| US6475925B1 (en) * | 2000-04-10 | 2002-11-05 | Motorola, Inc. | Reduced water adsorption for interlayer dielectric |
| US6468927B1 (en) * | 2000-05-19 | 2002-10-22 | Applied Materials, Inc. | Method of depositing a nitrogen-doped FSG layer |
| KR20020002732A (ko) * | 2000-06-30 | 2002-01-10 | 박종섭 | 반도체 소자의 절연막 형성 방법 |
| US6582522B2 (en) * | 2000-07-21 | 2003-06-24 | Applied Materials, Inc. | Emissivity-change-free pumping plate kit in a single wafer chamber |
| US6802906B2 (en) * | 2000-07-21 | 2004-10-12 | Applied Materials, Inc. | Emissivity-change-free pumping plate kit in a single wafer chamber |
| US6235654B1 (en) * | 2000-07-25 | 2001-05-22 | Advanced Micro Devices, Inc. | Process for forming PECVD nitride with a very low deposition rate |
| US6479404B1 (en) * | 2000-08-17 | 2002-11-12 | Agere Systems Inc. | Process for fabricating a semiconductor device having a metal oxide or a metal silicate gate dielectric layer |
| US6797646B2 (en) | 2001-01-12 | 2004-09-28 | Applied Materials Inc. | Method of nitrogen doping of fluorinated silicate glass (FSG) while removing the photoresist layer |
| US6632478B2 (en) | 2001-02-22 | 2003-10-14 | Applied Materials, Inc. | Process for forming a low dielectric constant carbon-containing film |
| US6511922B2 (en) | 2001-03-26 | 2003-01-28 | Applied Materials, Inc. | Methods and apparatus for producing stable low k FSG film for HDP-CVD |
| US6852649B1 (en) * | 2001-03-30 | 2005-02-08 | Cypress Semiconductor Corporation | Multi-step high density plasma (HDP) process to obtain uniformly doped insulating film |
| US6740601B2 (en) * | 2001-05-11 | 2004-05-25 | Applied Materials Inc. | HDP-CVD deposition process for filling high aspect ratio gaps |
| US6482754B1 (en) * | 2001-05-29 | 2002-11-19 | Intel Corporation | Method of forming a carbon doped oxide layer on a substrate |
| US6610354B2 (en) * | 2001-06-18 | 2003-08-26 | Applied Materials, Inc. | Plasma display panel with a low k dielectric layer |
| US6887780B2 (en) | 2001-08-31 | 2005-05-03 | Intel Corporation | Concentration graded carbon doped oxide |
| US6677253B2 (en) * | 2001-10-05 | 2004-01-13 | Intel Corporation | Carbon doped oxide deposition |
| US20030113085A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials, Inc., A Delaware Corporation | HDP-CVD film for uppercladding application in optical waveguides |
| US20030110808A1 (en) * | 2001-12-14 | 2003-06-19 | Applied Materials Inc., A Delaware Corporation | Method of manufacturing an optical core |
| US6514865B1 (en) * | 2002-01-11 | 2003-02-04 | Advanced Micro Devices, Inc. | Method of reducing interlayer dielectric thickness variation feeding into a planarization process |
| JP2003273212A (ja) * | 2002-03-14 | 2003-09-26 | Fujitsu Ltd | 積層構造体およびその製造方法 |
| US7390755B1 (en) | 2002-03-26 | 2008-06-24 | Novellus Systems, Inc. | Methods for post etch cleans |
| JP3504940B2 (ja) | 2002-05-17 | 2004-03-08 | 沖電気工業株式会社 | 半導体装置の製造方法 |
| KR100915231B1 (ko) * | 2002-05-17 | 2009-09-02 | 삼성전자주식회사 | 저유전율 절연막의 증착방법, 이를 이용한 박막트랜지스터및 그 제조방법 |
| JP3867017B2 (ja) * | 2002-05-24 | 2007-01-10 | Ｔｄｋ株式会社 | パターン形成方法、マイクロデバイスの製造方法、薄膜磁気ヘッドの製造方法、磁気ヘッドスライダの製造方法、磁気ヘッド装置の製造方法、磁気記録再生装置の製造方法 |
| US6809043B1 (en) * | 2002-06-19 | 2004-10-26 | Advanced Micro Devices, Inc. | Multi-stage, low deposition rate PECVD oxide |
| US6833322B2 (en) * | 2002-10-17 | 2004-12-21 | Applied Materials, Inc. | Apparatuses and methods for depositing an oxide film |
| US7080528B2 (en) * | 2002-10-23 | 2006-07-25 | Applied Materials, Inc. | Method of forming a phosphorus doped optical core using a PECVD process |
| US20040091717A1 (en) * | 2002-11-13 | 2004-05-13 | Novellus Systems, Inc. | Nitrogen-free fluorine-doped silicate glass |
| US6972217B1 (en) * | 2002-12-23 | 2005-12-06 | Lsi Logic Corporation | Low k polymer E-beam printable mechanical support |
| US7132369B2 (en) * | 2002-12-31 | 2006-11-07 | Applied Materials, Inc. | Method of forming a low-K dual damascene interconnect structure |
| JP4257576B2 (ja) * | 2003-03-25 | 2009-04-22 | ローム株式会社 | 成膜装置 |
| US6951775B2 (en) * | 2003-06-28 | 2005-10-04 | International Business Machines Corporation | Method for forming interconnects on thin wafers |
| US20050009367A1 (en) * | 2003-07-09 | 2005-01-13 | Taiwan Semiconductor Manufacturing Co. | Novel method to increase fluorine stability to improve gap fill ability and reduce k value of fluorine silicate glass (FSG) film |
| KR101076516B1 (ko) * | 2003-09-08 | 2011-10-24 | 파나소닉 주식회사 | 플라즈마 처리방법 및 장치 |
| KR100555539B1 (ko) * | 2003-12-17 | 2006-03-03 | 삼성전자주식회사 | 고밀도 플라즈마 화학기상증착 공정에 의한 갭 충전방법및 그 충전방법을 포함하는 집적 회로 소자의 제조방법 |
| US7288484B1 (en) | 2004-07-13 | 2007-10-30 | Novellus Systems, Inc. | Photoresist strip method for low-k dielectrics |
| US7202176B1 (en) * | 2004-12-13 | 2007-04-10 | Novellus Systems, Inc. | Enhanced stripping of low-k films using downstream gas mixing |
| US8193096B2 (en) * | 2004-12-13 | 2012-06-05 | Novellus Systems, Inc. | High dose implantation strip (HDIS) in H2 base chemistry |
| US8129281B1 (en) | 2005-05-12 | 2012-03-06 | Novellus Systems, Inc. | Plasma based photoresist removal system for cleaning post ash residue |
| US20070026653A1 (en) * | 2005-07-26 | 2007-02-01 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cap layer on doped dielectric |
| KR100790237B1 (ko) * | 2005-12-29 | 2008-01-02 | 매그나칩 반도체 유한회사 | 이미지 센서의 금속배선 형성방법 |
| US7524750B2 (en) * | 2006-04-17 | 2009-04-28 | Applied Materials, Inc. | Integrated process modulation (IPM) a novel solution for gapfill with HDP-CVD |
| US7740768B1 (en) | 2006-10-12 | 2010-06-22 | Novellus Systems, Inc. | Simultaneous front side ash and backside clean |
| US8435895B2 (en) | 2007-04-04 | 2013-05-07 | Novellus Systems, Inc. | Methods for stripping photoresist and/or cleaning metal regions |
| US8591661B2 (en) | 2009-12-11 | 2013-11-26 | Novellus Systems, Inc. | Low damage photoresist strip method for low-K dielectrics |
| US20110143548A1 (en) | 2009-12-11 | 2011-06-16 | David Cheung | Ultra low silicon loss high dose implant strip |
| WO2011072061A2 (en) * | 2009-12-11 | 2011-06-16 | Novellus Systems, Inc. | Enhanced passivation process to protect silicon prior to high dose implant strip |
| US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
| CN103098187B (zh) * | 2010-12-08 | 2015-09-09 | 日新电机株式会社 | 氮氧化硅膜及其形成方法、半导体器件以及薄膜晶体管 |
| US9719169B2 (en) | 2010-12-20 | 2017-08-01 | Novellus Systems, Inc. | System and apparatus for flowable deposition in semiconductor fabrication |
| US8304262B2 (en) * | 2011-02-17 | 2012-11-06 | Lam Research Corporation | Wiggling control for pseudo-hardmask |
| US8497211B2 (en) | 2011-06-24 | 2013-07-30 | Applied Materials, Inc. | Integrated process modulation for PSG gapfill |
| US9613825B2 (en) | 2011-08-26 | 2017-04-04 | Novellus Systems, Inc. | Photoresist strip processes for improved device integrity |
| JP6148845B2 (ja) * | 2012-11-06 | 2017-06-14 | 日本特殊陶業株式会社 | 電極内蔵型セラミックス焼結体の製造方法 |
| US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
| US9847222B2 (en) | 2013-10-25 | 2017-12-19 | Lam Research Corporation | Treatment for flowable dielectric deposition on substrate surfaces |
| US9514954B2 (en) | 2014-06-10 | 2016-12-06 | Lam Research Corporation | Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films |
| US10049921B2 (en) | 2014-08-20 | 2018-08-14 | Lam Research Corporation | Method for selectively sealing ultra low-k porous dielectric layer using flowable dielectric film formed from vapor phase dielectric precursor |
| US9916977B2 (en) | 2015-11-16 | 2018-03-13 | Lam Research Corporation | Low k dielectric deposition via UV driven photopolymerization |
| US10388546B2 (en) | 2015-11-16 | 2019-08-20 | Lam Research Corporation | Apparatus for UV flowable dielectric |
| JP2020136387A (ja) * | 2019-02-15 | 2020-08-31 | 東京エレクトロン株式会社 | 成膜方法、成膜処理用の処理容器のクリーニング方法及び成膜装置 |
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| US5261961A (en) * | 1985-07-23 | 1993-11-16 | Canon Kabushiki Kaisha | Device for forming deposited film |
| JP2697315B2 (ja) | 1991-01-23 | 1998-01-14 | 日本電気株式会社 | フッ素含有シリコン酸化膜の形成方法 |
| EP0584252B1 (de) * | 1991-05-17 | 1998-03-04 | Lam Research Corporation | VERFAHREN ZUR BESCHICHTUNG EINES SIOx FILMES MIT REDUZIERTER INTRINSISCHER SPANNUNG UND/ODER REDUZIERTEM WASSERSTOFFGEHALT |
| JP3688726B2 (ja) * | 1992-07-17 | 2005-08-31 | 株式会社東芝 | 半導体装置の製造方法 |
| US5571571A (en) | 1993-06-16 | 1996-11-05 | Applied Materials, Inc. | Method of forming a thin film for a semiconductor device |
| JPH07169833A (ja) * | 1993-12-14 | 1995-07-04 | Nec Corp | 半導体装置及びその製造方法 |
| US5563105A (en) | 1994-09-30 | 1996-10-08 | International Business Machines Corporation | PECVD method of depositing fluorine doped oxide using a fluorine precursor containing a glass-forming element |
| JPH08335579A (ja) * | 1995-06-07 | 1996-12-17 | Sony Corp | フッ素を含むシリコン系酸化膜およびその製造方法 |
| JP3979687B2 (ja) | 1995-10-26 | 2007-09-19 | アプライド マテリアルズ インコーポレイテッド | ハロゲンをドープした酸化珪素膜の膜安定性を改良する方法 |
| US6001728A (en) * | 1996-03-15 | 1999-12-14 | Applied Materials, Inc. | Method and apparatus for improving film stability of halogen-doped silicon oxide films |
| US5763010A (en) * | 1996-05-08 | 1998-06-09 | Applied Materials, Inc. | Thermal post-deposition treatment of halogen-doped films to improve film stability and reduce halogen migration to interconnect layers |
| US5807785A (en) * | 1996-08-02 | 1998-09-15 | Applied Materials, Inc. | Low dielectric constant silicon dioxide sandwich layer |
| US5661093A (en) * | 1996-09-12 | 1997-08-26 | Applied Materials, Inc. | Method for the stabilization of halogen-doped films through the use of multiple sealing layers |
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| US5994209A (en) * | 1996-11-13 | 1999-11-30 | Applied Materials, Inc. | Methods and apparatus for forming ultra-shallow doped regions using doped silicon oxide films |
| US5759906A (en) * | 1997-04-11 | 1998-06-02 | Industrial Technology Research Institute | Planarization method for intermetal dielectrics between multilevel interconnections on integrated circuits |
| JP3109449B2 (ja) * | 1997-04-25 | 2000-11-13 | 日本電気株式会社 | 多層配線構造の形成方法 |
| US5858869A (en) * | 1997-06-03 | 1999-01-12 | Industrial Technology Research Institute | Method for fabricating intermetal dielectric insulation using anisotropic plasma oxides and low dielectric constant polymers |
| US5908672A (en) * | 1997-10-15 | 1999-06-01 | Applied Materials, Inc. | Method and apparatus for depositing a planarized passivation layer |
| US5876798A (en) * | 1997-12-29 | 1999-03-02 | Chartered Semiconductor Manufacturing, Ltd. | Method of fluorinated silicon oxide film deposition |
| US6727190B2 (en) * | 1998-09-03 | 2004-04-27 | Micron Technology, Inc. | Method of forming fluorine doped boron-phosphorous silicate glass (F-BPSG) insulating materials |
-
1997
- 1997-04-21 US US08/837,641 patent/US6077764A/en not_active Expired - Lifetime
-
1998
- 1998-02-18 TW TW087102302A patent/TW380286B/zh not_active IP Right Cessation
- 1998-04-17 DE DE69837124T patent/DE69837124T2/de not_active Expired - Fee Related
- 1998-04-17 EP EP98107039A patent/EP0874391B1/de not_active Expired - Lifetime
- 1998-04-21 KR KR1019980014119A patent/KR100550419B1/ko not_active IP Right Cessation
- 1998-04-21 JP JP12685798A patent/JP4323583B2/ja not_active Expired - Fee Related
-
2000
- 2000-04-17 US US09/550,151 patent/US6395092B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US6077764A (en) | 2000-06-20 |
| EP0874391A3 (de) | 1998-12-30 |
| JPH118235A (ja) | 1999-01-12 |
| KR19980081561A (ko) | 1998-11-25 |
| DE69837124T2 (de) | 2009-08-20 |
| JP4323583B2 (ja) | 2009-09-02 |
| EP0874391B1 (de) | 2007-02-21 |
| EP0874391A2 (de) | 1998-10-28 |
| TW380286B (en) | 2000-01-21 |
| US6395092B1 (en) | 2002-05-28 |
| KR100550419B1 (ko) | 2006-04-21 |
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