DE69840589D1 - erungsvorrichtung - Google Patents

erungsvorrichtung

Info

Publication number
DE69840589D1
DE69840589D1 DE69840589T DE69840589T DE69840589D1 DE 69840589 D1 DE69840589 D1 DE 69840589D1 DE 69840589 T DE69840589 T DE 69840589T DE 69840589 T DE69840589 T DE 69840589T DE 69840589 D1 DE69840589 D1 DE 69840589D1
Authority
DE
Germany
Prior art keywords
erungsvorrichtung
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840589T
Other languages
English (en)
Inventor
Toru Koizumi
Tetsunobu Kochi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69840589D1 publication Critical patent/DE69840589D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/616—Noise processing, e.g. detecting, correcting, reducing or removing noise involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)
  • Light Receiving Elements (AREA)
DE69840589T 1997-10-06 1998-09-30 erungsvorrichtung Expired - Lifetime DE69840589D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27257897A JP3466886B2 (ja) 1997-10-06 1997-10-06 固体撮像装置

Publications (1)

Publication Number Publication Date
DE69840589D1 true DE69840589D1 (de) 2009-04-09

Family

ID=17515876

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69840589T Expired - Lifetime DE69840589D1 (de) 1997-10-06 1998-09-30 erungsvorrichtung

Country Status (7)

Country Link
US (1) US6650369B2 (de)
EP (1) EP0908957B1 (de)
JP (1) JP3466886B2 (de)
KR (1) KR100279305B1 (de)
CN (1) CN1175655C (de)
DE (1) DE69840589D1 (de)
TW (1) TW419835B (de)

Families Citing this family (89)

* Cited by examiner, † Cited by third party
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EP0898419B1 (de) 1997-08-15 2010-10-27 Sony Corporation Festkörper-Bildaufnahmevorrichtung und Steuerverfahren dafür
JP4006075B2 (ja) * 1998-01-30 2007-11-14 キヤノン株式会社 Ｃｍｏｓセンサ及び撮像システム
JP4305970B2 (ja) 1998-06-05 2009-07-29 ソニー株式会社 固体撮像素子の駆動方法
JP4200545B2 (ja) 1998-06-08 2008-12-24 ソニー株式会社 固体撮像素子およびその駆動方法、並びにカメラシステム
EP0999698B1 (de) * 1998-11-02 2013-06-19 Canon Kabushiki Kaisha Festkörper-Bildaufnahmevorrichtung und entsprechendes Resetverfahren
US6850278B1 (en) * 1998-11-27 2005-02-01 Canon Kabushiki Kaisha Solid-state image pickup apparatus
EP2244295B1 (de) * 1999-10-05 2011-12-21 Canon Kabushiki Kaisha Festkörperbildaufnahmevorrichtung
US7324144B1 (en) * 1999-10-05 2008-01-29 Canon Kabushiki Kaisha Solid image pickup device, image pickup system and method of driving solid image pickup device
WO2001048826A1 (fr) * 1999-12-24 2001-07-05 Hamamatsu Photonics K.K. Capteur d'energie de semiconducteur
JP2001189893A (ja) * 1999-12-28 2001-07-10 Toshiba Corp 固体撮像装置
US6995800B2 (en) * 2000-01-27 2006-02-07 Canon Kabushiki Kaisha Image pickup apparatus utilizing a plurality of converging lenses
US6965408B2 (en) 2000-02-28 2005-11-15 Canon Kabushiki Kaisha Solid-state image pickup device having a photoelectric conversion unit and a punch-through current suppression circuit
EP2290952A3 (de) * 2000-07-27 2011-08-17 Canon Kabushiki Kaisha Bildaufnahmevorrichtung
JP3750502B2 (ja) 2000-08-03 2006-03-01 ソニー株式会社 固体撮像装置およびカメラシステム
JP3667214B2 (ja) 2000-08-25 2005-07-06 キヤノン株式会社 固体撮像装置およびその駆動方法
US7012644B1 (en) * 2000-09-06 2006-03-14 Hewlett-Packard Development Company, L.P. Multiple output node charge coupled device
US6888572B1 (en) * 2000-10-26 2005-05-03 Rockwell Science Center, Llc Compact active pixel with low-noise image formation
JP4597354B2 (ja) * 2000-12-20 2010-12-15 ルネサスエレクトロニクス株式会社 Ｍｏｓ型イメージセンサ
US6541772B2 (en) * 2000-12-26 2003-04-01 Honeywell International Inc. Microbolometer operating system
JP3899236B2 (ja) * 2001-02-16 2007-03-28 シャープ株式会社 イメージセンサの製造方法
US7180544B2 (en) * 2001-03-05 2007-02-20 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
US7187410B2 (en) * 2001-03-05 2007-03-06 Matsushita Electric Industrial Co., Ltd. Solid state image sensor
JP2002330351A (ja) * 2001-04-27 2002-11-15 Mitsubishi Electric Corp 固体撮像素子
JP3962561B2 (ja) * 2001-07-12 2007-08-22 キヤノン株式会社 固体撮像装置及びそれを用いた撮像システム
JP4681767B2 (ja) * 2001-07-17 2011-05-11 キヤノン株式会社 撮像装置およびカメラ
JP4195802B2 (ja) * 2001-09-21 2008-12-17 イーエヌジー株式会社 半導体撮像素子
EP1459356A2 (de) * 2001-12-21 2004-09-22 Koninklijke Philips Electronics N.V. Bildaufnahmevorrichtung und kamerasystem dass eine bildaufnahmevorrichtung enthält
KR100940637B1 (ko) * 2002-02-12 2010-02-05 소니 주식회사 고체 촬상 장치 및 카메라 시스템
JP2004153705A (ja) * 2002-10-31 2004-05-27 Matsushita Electric Ind Co Ltd 増幅型固体撮像装置及びそれを用いた撮像システム
JP4323772B2 (ja) * 2002-10-31 2009-09-02 キヤノン株式会社 固体撮像装置、カメラ及びカメラ制御システム
JP3988189B2 (ja) 2002-11-20 2007-10-10 ソニー株式会社 固体撮像装置
JP4355148B2 (ja) * 2003-02-28 2009-10-28 パナソニック株式会社 固体撮像装置の駆動方法
JP3794637B2 (ja) * 2003-03-07 2006-07-05 松下電器産業株式会社 固体撮像装置
JP4283014B2 (ja) * 2003-03-19 2009-06-24 パナソニック株式会社 固体撮像装置、固体撮像装置の駆動方法およびカメラ
JP3562649B1 (ja) * 2003-03-20 2004-09-08 松下電器産業株式会社 固体撮像装置およびその駆動方法
FR2852770B1 (fr) * 2003-03-21 2005-05-27 Capteur d'image a cycle de lecture rapide
US7518759B2 (en) 2003-04-22 2009-04-14 Xerox Corporation Readout system for a CMOS-based image sensor array
JP4231328B2 (ja) 2003-04-24 2009-02-25 浜松ホトニクス株式会社 固体撮像装置
JP4207659B2 (ja) * 2003-05-16 2009-01-14 ソニー株式会社 固体撮像装置およびその駆動方法、ならびにカメラ装置
CN1574370A (zh) * 2003-05-30 2005-02-02 松下电器产业株式会社 固体摄像器件
US7141841B2 (en) * 2003-07-03 2006-11-28 Micron Technology, Inc. Image sensor having a transistor for allowing increased dynamic range
JP4378137B2 (ja) * 2003-09-04 2009-12-02 キヤノン株式会社 読み出し回路、固体撮像装置、及びこれを用いたカメラシステム
JP3829831B2 (ja) * 2003-09-09 2006-10-04 セイコーエプソン株式会社 固体撮像装置及びその駆動方法
JP2005229373A (ja) * 2004-02-13 2005-08-25 Sony Corp 固体撮像装置および固体撮像装置の駆動方法
JP4434797B2 (ja) * 2004-03-19 2010-03-17 オリンパス株式会社 撮像素子および撮像装置
JP4074599B2 (ja) * 2004-03-26 2008-04-09 シャープ株式会社 増幅型固体撮像装置
US7605415B2 (en) * 2004-06-07 2009-10-20 Canon Kabushiki Kaisha Image pickup device comprising photoelectric conversation unit, floating diffusion region and guard ring
US7825982B2 (en) * 2004-06-17 2010-11-02 Aptina Imaging Corporation Operation stabilized pixel bias circuit
JP4654623B2 (ja) * 2004-07-08 2011-03-23 ソニー株式会社 固体撮像装置の製造方法
JP4229884B2 (ja) * 2004-07-29 2009-02-25 シャープ株式会社 増幅型固体撮像装置
CN101069418A (zh) * 2005-02-28 2007-11-07 松下电器产业株式会社 固体摄像装置及其驱动方法
JP4340640B2 (ja) 2005-04-20 2009-10-07 シャープ株式会社 増幅型固体撮像装置
JP5340374B2 (ja) * 2005-06-09 2013-11-13 キヤノン株式会社 撮像装置及び撮像システム
JP5247007B2 (ja) 2005-06-09 2013-07-24 キヤノン株式会社 撮像装置及び撮像システム
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JP4956084B2 (ja) 2006-08-01 2012-06-20 キヤノン株式会社 光電変換装置及びそれを用いた撮像システム
JP4144892B2 (ja) * 2006-08-28 2008-09-03 キヤノン株式会社 光電変換装置及び撮像装置
JP2007019540A (ja) * 2006-09-20 2007-01-25 Sharp Corp イメージセンサ
JP4840991B2 (ja) * 2006-10-04 2011-12-21 キヤノン株式会社 光電変換装置及びその制御方法並びに撮像装置
JP4840992B2 (ja) * 2006-10-04 2011-12-21 キヤノン株式会社 光電変換装置及びその制御方法並びに撮像装置
JP4979375B2 (ja) * 2006-12-28 2012-07-18 キヤノン株式会社 固体撮像装置及び撮像システム
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JP5222029B2 (ja) 2008-06-05 2013-06-26 キヤノン株式会社 撮像装置、撮像システム、および、撮像装置の制御方法
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JP5404112B2 (ja) * 2009-03-12 2014-01-29 キヤノン株式会社 固体撮像素子、その駆動方法及び撮像システム
JP5538876B2 (ja) * 2009-12-25 2014-07-02 キヤノン株式会社 固体撮像装置
JP4921615B2 (ja) 2010-01-25 2012-04-25 パナソニック株式会社 プロテインａを自己組織化膜上に固定する方法
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JP5149992B2 (ja) 2010-08-30 2013-02-20 パナソニック株式会社 ストレプトアビジンを自己組織化膜上に固定する方法
JP5205430B2 (ja) * 2010-09-27 2013-06-05 株式会社半導体エネルギー研究所 半導体装置
KR101728713B1 (ko) * 2010-10-08 2017-04-21 (주) 지안 넓은 동적범위를 갖는 씨모스 이미지 센서 및 이미지 센싱 방법
CN103124786A (zh) 2010-10-19 2013-05-29 松下电器产业株式会社 将葡萄糖氧化酶固定在自组装膜上的方法
JP5646420B2 (ja) * 2011-09-14 2014-12-24 株式会社東芝 固体撮像装置
JP5924923B2 (ja) * 2011-12-15 2016-05-25 キヤノン株式会社 光電変換装置、及び光電変換装置の駆動方法
JP5409976B1 (ja) * 2012-04-09 2014-02-05 オリンパスメディカルシステムズ株式会社 固体撮像装置
CN103067676B (zh) * 2013-01-16 2016-03-30 北京思比科微电子技术股份有限公司 高动态图像传感器及其有源像素
JP5470475B2 (ja) * 2013-02-15 2014-04-16 株式会社半導体エネルギー研究所 半導体装置及び電子機器
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JP2018107725A (ja) * 2016-12-27 2018-07-05 キヤノン株式会社 光電変換装置、撮像システム

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Also Published As

Publication number Publication date
EP0908957A2 (de) 1999-04-14
CN1175655C (zh) 2004-11-10
CN1217618A (zh) 1999-05-26
US6650369B2 (en) 2003-11-18
JP3466886B2 (ja) 2003-11-17
TW419835B (en) 2001-01-21
KR19990036904A (ko) 1999-05-25
KR100279305B1 (ko) 2001-02-01
US20030137594A1 (en) 2003-07-24
EP0908957A3 (de) 2000-04-05
EP0908957B1 (de) 2009-02-25
JPH11112018A (ja) 1999-04-23

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