DE69840690D1 - Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte - Google Patents

Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte

Info

Publication number
DE69840690D1
DE69840690D1 DE69840690T DE69840690T DE69840690D1 DE 69840690 D1 DE69840690 D1 DE 69840690D1 DE 69840690 T DE69840690 T DE 69840690T DE 69840690 T DE69840690 T DE 69840690T DE 69840690 D1 DE69840690 D1 DE 69840690D1
Authority
DE
Germany
Prior art keywords
interstitial
self
defect silicon
dominated
low
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69840690T
Other languages
English (en)
Inventor
Robert Falster
Steve A Markgraf
Seamus A Mcquaid
Joseph C Holzer
Paolo Mutti
Bayard K Johnson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21918645&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69840690(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69840690D1 publication Critical patent/DE69840690D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/21—Circular sheet or circular blank
DE69840690T 1997-04-09 1998-04-09 Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte Expired - Lifetime DE69840690D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US4184597P 1997-04-09 1997-04-09

Publications (1)

Publication Number Publication Date
DE69840690D1 true DE69840690D1 (de) 2009-05-07

Family

ID=21918645

Family Applications (7)

Application Number Title Priority Date Filing Date
DE69824647T Expired - Lifetime DE69824647T2 (de) 1997-04-09 1998-04-09 Silicium mit niedriger Fehlerdichte
DE69806137T Expired - Lifetime DE69806137T2 (de) 1997-04-09 1998-04-09 Silizium mit niedriger defektdichte
DE69831618T Expired - Lifetime DE69831618T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69801903T Expired - Lifetime DE69801903T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes silicium mit niedriger fehlerdichte
DE69807676T Expired - Lifetime DE69807676T2 (de) 1997-04-09 1998-04-09 Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
DE69813041T Expired - Lifetime DE69813041T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69840690T Expired - Lifetime DE69840690D1 (de) 1997-04-09 1998-04-09 Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte

Family Applications Before (6)

Application Number Title Priority Date Filing Date
DE69824647T Expired - Lifetime DE69824647T2 (de) 1997-04-09 1998-04-09 Silicium mit niedriger Fehlerdichte
DE69806137T Expired - Lifetime DE69806137T2 (de) 1997-04-09 1998-04-09 Silizium mit niedriger defektdichte
DE69831618T Expired - Lifetime DE69831618T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69801903T Expired - Lifetime DE69801903T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes silicium mit niedriger fehlerdichte
DE69807676T Expired - Lifetime DE69807676T2 (de) 1997-04-09 1998-04-09 Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
DE69813041T Expired - Lifetime DE69813041T2 (de) 1997-04-09 1998-04-09 Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte

Country Status (10)

Country Link
US (11) US5919302A (de)
EP (7) EP1118697B1 (de)
JP (9) JP3449730B2 (de)
KR (6) KR20010006182A (de)
CN (7) CN101070621B (de)
DE (7) DE69824647T2 (de)
MY (6) MY127584A (de)
SG (3) SG105509A1 (de)
TW (3) TW577939B (de)
WO (3) WO1998045510A1 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6503594B2 (en) 1997-02-13 2003-01-07 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects and slip
US6485807B1 (en) 1997-02-13 2002-11-26 Samsung Electronics Co., Ltd. Silicon wafers having controlled distribution of defects, and methods of preparing the same
US6045610A (en) * 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
SG64470A1 (en) 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
EP0973962B1 (de) 1997-04-09 2002-07-03 MEMC Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
TW577939B (en) * 1997-04-09 2004-03-01 Memc Electronic Materials A process for growing a single crystal silicon ingot
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
EP1035234A4 (de) * 1997-08-26 2003-05-28 Sumitomo Mitsubishi Silicon Hochqualitativer silikoneinkristall und verfahren zu dessen herstellung
US6340392B1 (en) 1997-10-24 2002-01-22 Samsung Electronics Co., Ltd. Pulling methods for manufacturing monocrystalline silicone ingots by controlling temperature at the center and edge of an ingot-melt interface
JP3346249B2 (ja) * 1997-10-30 2002-11-18 信越半導体株式会社 シリコンウエーハの熱処理方法及びシリコンウエーハ
JP3407629B2 (ja) * 1997-12-17 2003-05-19 信越半導体株式会社 シリコン単結晶ウエーハの熱処理方法ならびにシリコン単結晶ウエーハ
JP3955375B2 (ja) * 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
JPH11349393A (ja) * 1998-06-03 1999-12-21 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハおよびシリコン単結晶ウエーハの製造方法
JP3943717B2 (ja) 1998-06-11 2007-07-11 信越半導体株式会社 シリコン単結晶ウエーハ及びその製造方法
EP1090166B1 (de) 1998-06-26 2002-03-27 MEMC Electronic Materials, Inc. Verfahren zur herstellung fehlerfreier siliziumkristalle von willkürlichem grossen durchmesser
WO2000013211A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
DE69928434T2 (de) * 1998-09-02 2006-07-27 Memc Electronic Materials, Inc. Wärmebehandelte siliziumplättchen mit verbesserter eigengetterung
EP1110240B1 (de) 1998-09-02 2006-10-25 MEMC Electronic Materials, Inc. Verfahren zur herstellung von einem silizium wafer mit idealem sauerstoffniederschlagverhalten
US6312516B2 (en) * 1998-10-14 2001-11-06 Memc Electronic Materials, Inc. Process for preparing defect free silicon crystals which allows for variability in process conditions
JP3904832B2 (ja) 1998-10-14 2007-04-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶成長導入欠陥を実質的に有さないエピタキシャルシリコンウエハ
CN1296526C (zh) 1998-10-14 2007-01-24 Memc电子材料有限公司 热退火后的低缺陷密度单晶硅
JP4233651B2 (ja) * 1998-10-29 2009-03-04 信越半導体株式会社 シリコン単結晶ウエーハ
JP2000154070A (ja) * 1998-11-16 2000-06-06 Suminoe Textile Co Ltd セラミックス三次元構造体及びその製造方法
TW505710B (en) 1998-11-20 2002-10-11 Komatsu Denshi Kinzoku Kk Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer
US6284384B1 (en) * 1998-12-09 2001-09-04 Memc Electronic Materials, Inc. Epitaxial silicon wafer with intrinsic gettering
KR20010083771A (ko) * 1998-12-28 2001-09-01 와다 다다시 실리콘 웨이퍼의 열처리 방법 및 실리콘 웨이퍼
JP3601340B2 (ja) * 1999-02-01 2004-12-15 信越半導体株式会社 エピタキシャルシリコンウエーハおよびその製造方法並びにエピタキシャルシリコンウエーハ用基板
US6458202B1 (en) * 1999-09-02 2002-10-01 Memc Electronic Materials, Inc. Process for preparing single crystal silicon having uniform thermal history
US6635587B1 (en) 1999-09-23 2003-10-21 Memc Electronic Materials, Inc. Method for producing czochralski silicon free of agglomerated self-interstitial defects
US6391662B1 (en) 1999-09-23 2002-05-21 Memc Electronic Materials, Inc. Process for detecting agglomerated intrinsic point defects by metal decoration
WO2001021861A1 (en) * 1999-09-23 2001-03-29 Memc Electronic Materials, Inc. Czochralski process for growing single crystal silicon by controlling the cooling rate
JP4103391B2 (ja) * 1999-10-14 2008-06-18 信越半導体株式会社 Ｓｏｉウエーハの製造方法及びｓｏｉウエーハ
JP2001118801A (ja) * 1999-10-18 2001-04-27 Mitsubishi Materials Silicon Corp エピタキシャルウェーハ用基板およびこれを用いた半導体装置
WO2002002852A1 (fr) * 2000-06-30 2002-01-10 Shin-Etsu Handotai Co., Ltd. Plaquette en silicium monocristallin et procede de fabrication
KR100374703B1 (ko) 2000-09-04 2003-03-04 주식회사 실트론 단결정 실리콘 웨이퍼,잉곳 및 그 제조방법
EP1669478B1 (de) * 2000-09-19 2010-03-17 MEMC Electronic Materials, Inc. Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
DE60141611D1 (de) * 2000-09-19 2010-04-29 Memc Electronic Materials Mit stickstoff dotiertes silizium das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist
US6663708B1 (en) * 2000-09-22 2003-12-16 Mitsubishi Materials Silicon Corporation Silicon wafer, and manufacturing method and heat treatment method of the same
KR20020024368A (ko) * 2000-09-25 2002-03-30 가와이 겐이찌 실리콘 웨이퍼
DE10066099B4 (de) * 2000-09-25 2008-11-20 Mitsubishi Materials Silicon Corp. Wärmebehandlungsverfahren für einen Siliciumwafer
US6858307B2 (en) 2000-11-03 2005-02-22 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
WO2003004734A1 (en) * 2000-11-03 2003-01-16 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US7105050B2 (en) 2000-11-03 2006-09-12 Memc Electronic Materials, Inc. Method for the production of low defect density silicon
US6689209B2 (en) * 2000-11-03 2004-02-10 Memc Electronic Materials, Inc. Process for preparing low defect density silicon using high growth rates
US8529695B2 (en) 2000-11-22 2013-09-10 Sumco Corporation Method for manufacturing a silicon wafer
KR20030059293A (ko) * 2000-11-30 2003-07-07 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 베이컨시-지배 단결정 실리콘의 열 이력을 제어하는 공정
US20040055527A1 (en) * 2000-11-30 2004-03-25 Makoto Kojima Process for controlling thermal history of vacancy-dominated, single crystal silicon
US7008874B2 (en) * 2000-12-19 2006-03-07 Memc Electronics Materials, Inc. Process for reclaiming semiconductor wafers and reclaimed wafers
JP3624827B2 (ja) 2000-12-20 2005-03-02 三菱住友シリコン株式会社 シリコン単結晶の製造方法
JP3994665B2 (ja) * 2000-12-28 2007-10-24 信越半導体株式会社 シリコン単結晶ウエーハおよびシリコン単結晶の製造方法
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults
KR100708788B1 (ko) 2001-01-02 2007-04-19 엠이엠씨 일렉트로닉 머티리얼즈, 인크. 향상된 게이트 산화물 완전도를 가지는 단결정 실리콘을준비하는 공정
WO2002059400A2 (en) * 2001-01-26 2002-08-01 Memc Electronic Materials, Inc. Low defect density silicon substantially free of oxidation induced stacking faults having a vacancy-dominated core
US6743495B2 (en) 2001-03-30 2004-06-01 Memc Electronic Materials, Inc. Thermal annealing process for producing silicon wafers with improved surface characteristics
US6649883B2 (en) * 2001-04-12 2003-11-18 Memc Electronic Materials, Inc. Method of calibrating a semiconductor wafer drying apparatus
EP1423871A2 (de) * 2001-06-22 2004-06-02 MEMC Electronic Materials, Inc. Verfahren zur herstellung einer silizium-auf-isolator struktur mit intrinsischem gettern durch ionenimplantierung
EP1710830A3 (de) * 2001-06-22 2007-11-28 MEMC Electronic Materials, Inc. Silizium-auf-Isolator Struktur mit intrinsischem Gettern
WO2003016598A1 (en) * 2001-08-15 2003-02-27 Memc Electronic Materials, Inc. Controlled crown growth process for czochralski single crystal silicon
US20030047130A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
JP4567251B2 (ja) * 2001-09-14 2010-10-20 シルトロニック・ジャパン株式会社 シリコン半導体基板およびその製造方法
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
US6669775B2 (en) 2001-12-06 2003-12-30 Seh America, Inc. High resistivity silicon wafer produced by a controlled pull rate czochralski method
JP4092946B2 (ja) * 2002-05-09 2008-05-28 信越半導体株式会社 シリコン単結晶ウエーハ及びエピタキシャルウエーハ並びにシリコン単結晶の製造方法
WO2004035879A1 (ja) * 2002-10-18 2004-04-29 Sumitomo Mitsubishi Silicon Corporation シリコン単結晶インゴットの点欠陥分布を測定する方法
EP1560950B1 (de) * 2002-11-12 2008-09-17 MEMC Electronic Materials, Inc. Kristallziehvorrichtung und verfahren zur züchtung einer einkristallstange
EP2177648B1 (de) 2002-11-12 2013-02-13 MEMC Electronic Materials, Inc. Verfahren zur Herstellung eines Siliciumeinkristalles unter Verwendung der Rotation des Tiegels um die Temperaturgradienten zu steuern
JP4382438B2 (ja) * 2002-11-14 2009-12-16 株式会社東芝 半導体ウェーハの検査方法、半導体装置の開発方法、半導体装置の製造方法、および半導体ウェーハ処理装置
JP2004172391A (ja) * 2002-11-20 2004-06-17 Sumitomo Mitsubishi Silicon Corp シリコンウェーハおよびその製造方法
US6916324B2 (en) * 2003-02-04 2005-07-12 Zimmer Technology, Inc. Provisional orthopedic prosthesis for partially resected bone
JPWO2004083496A1 (ja) * 2003-02-25 2006-06-22 株式会社Sumco シリコンウェーハ及びその製造方法、並びにシリコン単結晶育成方法
JP4151474B2 (ja) * 2003-05-13 2008-09-17 信越半導体株式会社 単結晶の製造方法及び単結晶
US7559326B2 (en) 2003-06-18 2009-07-14 Resmed Limited Vent and/or diverter assembly for use in breathing apparatus
JP2005015313A (ja) * 2003-06-27 2005-01-20 Shin Etsu Handotai Co Ltd 単結晶の製造方法及び単結晶
US6955718B2 (en) * 2003-07-08 2005-10-18 Memc Electronic Materials, Inc. Process for preparing a stabilized ideal oxygen precipitating silicon wafer
KR100531552B1 (ko) 2003-09-05 2005-11-28 주식회사 하이닉스반도체 실리콘 웨이퍼 및 그 제조방법
JP4432458B2 (ja) * 2003-10-30 2010-03-17 信越半導体株式会社 単結晶の製造方法
US7074271B2 (en) * 2004-02-23 2006-07-11 Sumitomo Mitsubishi Silicon Corporation Method of identifying defect distribution in silicon single crystal ingot
KR100788018B1 (ko) 2004-11-29 2007-12-21 주식회사 실트론 실리콘 단결정 잉곳 및 그로부터 제조된 실리콘 웨이퍼
US7416603B2 (en) * 2004-10-19 2008-08-26 Siltron Inc. High quality single crystal and method of growing the same
KR100709798B1 (ko) * 2004-10-19 2007-04-23 주식회사 실트론 고품질 단결정 성장 방법
GB0424505D0 (en) * 2004-11-05 2004-12-08 Gr Advanced Materials Ltd Emulsion ink
US7371283B2 (en) * 2004-11-23 2008-05-13 Siltron Inc. Method and apparatus of growing silicon single crystal and silicon wafer fabricated thereby
KR100714215B1 (ko) 2004-11-23 2007-05-02 주식회사 실트론 고품질 실리콘 단결정 잉곳 및 그로부터 제조된 고 품질 실리콘 웨이퍼
US20060138601A1 (en) * 2004-12-27 2006-06-29 Memc Electronic Materials, Inc. Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafers
KR100840751B1 (ko) * 2005-07-26 2008-06-24 주식회사 실트론 고품질 실리콘 단결정 잉곳 제조 방법, 성장 장치 및그로부터 제조된 잉곳 , 웨이퍼
JP4743010B2 (ja) * 2005-08-26 2011-08-10 株式会社Ｓｕｍｃｏ シリコンウェーハの表面欠陥評価方法
KR100831044B1 (ko) * 2005-09-21 2008-05-21 주식회사 실트론 고품질 실리콘 단결정 잉곳의 성장장치, 그 장치를 이용한성장방법
US7633307B2 (en) * 2005-12-16 2009-12-15 Freescale Semiconductor, Inc. Method for determining temperature profile in semiconductor manufacturing test
US7427325B2 (en) 2005-12-30 2008-09-23 Siltron, Inc. Method for producing high quality silicon single crystal ingot and silicon single crystal wafer made thereby
JP2007194232A (ja) * 2006-01-17 2007-08-02 Shin Etsu Handotai Co Ltd シリコン単結晶ウエーハの製造方法
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
JP5138678B2 (ja) 2006-05-19 2013-02-06 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド Ｃｚ成長中のシリコン単結晶側表面から誘起される凝集点欠陥および酸素クラスターの形成制御
DE102006034786B4 (de) 2006-07-27 2011-01-20 Siltronic Ag Monokristalline Halbleiterscheibe mit defektreduzierten Bereichen und Verfahren zur Ausheilung GOI-relevanter Defekte in einer monokristallinen Halbleiterscheibe
US7560355B2 (en) * 2006-10-24 2009-07-14 Vishay General Semiconductor Llc Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming same
JP2009292662A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶育成における肩形成方法
JP2009292663A (ja) * 2008-06-03 2009-12-17 Sumco Corp シリコン単結晶の育成方法
JP2010040587A (ja) * 2008-07-31 2010-02-18 Covalent Materials Corp シリコンウェーハの製造方法
IL204034A (en) * 2009-02-24 2015-05-31 Schott Ag Photovoltaic device with central optics
KR101275418B1 (ko) * 2010-03-16 2013-06-14 주식회사 엘지실트론 단결정 잉곳 제조방법 및 이에 의해 제조된 웨이퍼
CN101824649A (zh) * 2010-04-30 2010-09-08 中山大学 自动化光电晶体炉的生长前阶段控制方法
JP2012166979A (ja) * 2011-02-14 2012-09-06 Sumco Corp 多結晶シリコンの電磁鋳造方法および電磁鋳造装置
JP5733245B2 (ja) 2012-03-16 2015-06-10 信越半導体株式会社 シリコン単結晶ウェーハの製造方法
CN102978688B (zh) * 2012-11-16 2015-07-08 晶科能源有限公司 一种直拉单晶法的冷却工艺
FR3005966B1 (fr) * 2013-05-27 2016-12-30 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee
FR3005967B1 (fr) * 2013-05-27 2017-06-02 Commissariat Energie Atomique Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
US20150243494A1 (en) * 2014-02-25 2015-08-27 Texas Instruments Incorporated Mechanically robust silicon substrate having group iiia-n epitaxial layer thereon
WO2016019051A1 (en) 2014-07-31 2016-02-04 Sunedison Semiconductor Limited Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and size
DE102015224983B4 (de) 2015-12-11 2019-01-24 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren zu deren Herstellung
DE102015226399A1 (de) 2015-12-22 2017-06-22 Siltronic Ag Siliciumscheibe mit homogener radialer Sauerstoffvariation
CN109346433B (zh) 2018-09-26 2020-10-23 上海新傲科技股份有限公司 半导体衬底的键合方法以及键合后的半导体衬底
EP3953504B1 (de) 2019-04-11 2023-07-12 GlobalWafers Co., Ltd. Verfahren zur herstellung von ingots mit reduzierter verzerrung bei später körperlänge
JP2022529451A (ja) 2019-04-18 2022-06-22 グローバルウェーハズ カンパニー リミテッド 連続チョクラルスキー法を用いる単結晶シリコンインゴットの成長方法
CN115341264A (zh) 2019-09-13 2022-11-15 环球晶圆股份有限公司 使用连续柴可斯基方法生长氮掺杂单晶硅锭的方法以及通过此方法生长的单晶硅锭
EP3929334A1 (de) 2020-06-23 2021-12-29 Siltronic AG Verfahren zur herstellung von halbleiterscheiben
EP3940124B1 (de) 2020-07-14 2024-01-03 Siltronic AG Kristallstück aus monokristallinem silizium
WO2022017586A1 (de) * 2020-07-21 2022-01-27 Wacker Chemie Ag Verfahren zur bestimmung von spurenmetallen in silicium
KR102255421B1 (ko) * 2020-08-11 2021-05-24 충남대학교산학협력단 단결정 산화갈륨의 결함 평가방법
CN113138195A (zh) * 2021-04-16 2021-07-20 上海新昇半导体科技有限公司 晶体缺陷的监控方法及晶棒生长方法
CN113703411B (zh) * 2021-08-31 2022-08-30 亚洲硅业(青海)股份有限公司 多晶硅生长过程监测系统、方法及多晶硅生产系统
WO2023125206A1 (zh) * 2021-12-27 2023-07-06 中环领先半导体材料有限公司 单晶体的制备方法及硅晶体
CN115233296A (zh) * 2022-07-25 2022-10-25 北京麦竹吉科技有限公司 一种加热器、拉晶炉和消除大直径单晶硅自我间隙缺陷的方法
EP4321656A1 (de) 2022-08-09 2024-02-14 Siltronic AG Verfahren zum herstellen eines monokristallinen kristalls aus silizium

Family Cites Families (75)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US622164A (en) * 1899-03-28 Carl august pfenning
US548735A (en) * 1895-10-29 Pile carpet
GB1456050A (en) * 1974-05-13 1976-11-17 British Aluminium Co Ltd Production of metallic articles
US3997368A (en) 1975-06-24 1976-12-14 Bell Telephone Laboratories, Incorporated Elimination of stacking faults in silicon devices: a gettering process
JPS583375B2 (ja) 1979-01-19 1983-01-21 超エル・エス・アイ技術研究組合 シリコン単結晶ウエハ−の製造方法
US4350560A (en) * 1981-08-07 1982-09-21 Ferrofluidics Corporation Apparatus for and method of handling crystals from crystal-growing furnaces
US4473795A (en) * 1983-02-23 1984-09-25 International Business Machines Corporation System for resist defect measurement
JPS59190300A (ja) 1983-04-08 1984-10-29 Hitachi Ltd 半導体製造方法および装置
JPS62105998A (ja) 1985-10-31 1987-05-16 Sony Corp シリコン基板の製法
CN86104069A (zh) * 1986-06-09 1987-02-11 电子工业部第四十四研究所 硅的多重吸杂技术及多重吸杂硅片
JPS63215041A (ja) 1987-03-04 1988-09-07 Toshiba Corp 結晶欠陥評価用エツチング液
US5264189A (en) * 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
US4981549A (en) * 1988-02-23 1991-01-01 Mitsubishi Kinzoku Kabushiki Kaisha Method and apparatus for growing silicon crystals
JPH02137524A (ja) 1988-11-18 1990-05-25 Matsushita Electric Ind Co Ltd 電子チューナ
JPH02180789A (ja) 1989-01-05 1990-07-13 Kawasaki Steel Corp Ｓｉ単結晶の製造方法
JPH0633235B2 (ja) 1989-04-05 1994-05-02 新日本製鐵株式会社 酸化膜耐圧特性の優れたシリコン単結晶及びその製造方法
JPH0633236B2 (ja) 1989-09-04 1994-05-02 新日本製鐵株式会社 シリコン単結晶の熱処理方法および装置ならびに製造装置
JPH0729878B2 (ja) 1990-06-07 1995-04-05 三菱マテリアル株式会社 シリコンウエーハ
JPH04108682A (ja) 1990-08-30 1992-04-09 Fuji Electric Co Ltd 化合物半導体単結晶製造装置および製造方法
JPH06103714B2 (ja) 1990-11-22 1994-12-14 信越半導体株式会社 シリコン単結晶の電気特性検査方法
JPH08760B2 (ja) 1991-03-14 1996-01-10 信越半導体株式会社 シリコンウェーハの品質検査方法
JP2613498B2 (ja) 1991-03-15 1997-05-28 信越半導体株式会社 Ｓｉ単結晶ウエーハの熱処理方法
JP3016897B2 (ja) * 1991-03-20 2000-03-06 信越半導体株式会社 シリコン単結晶の製造方法及び装置
JP2758093B2 (ja) * 1991-10-07 1998-05-25 信越半導体株式会社 半導体ウェーハの製造方法
JPH0684925A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体基板およびその処理方法
DE4490103T1 (de) * 1993-01-06 1997-07-24 Nippon Steel Corp Verfahren und Vorrichtung zum Vorherbestimmen der Kristallqualität eines Halbleiter- Einkristalls
JPH0741383A (ja) 1993-07-29 1995-02-10 Nippon Steel Corp 半導体単結晶およびその製造方法
JPH07158458A (ja) 1993-12-10 1995-06-20 Mitsubishi Motors Corp 多気筒内燃エンジンの吸気制御装置
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
IT1280041B1 (it) 1993-12-16 1997-12-29 Wacker Chemitronic Procedimento per il tiraggio di un monocristallo di silicio
JP3276500B2 (ja) 1994-01-14 2002-04-22 ワッカー・エヌエスシーイー株式会社 シリコンウェーハとその製造方法
US5474020A (en) * 1994-05-06 1995-12-12 Texas Instruments Incorporated Oxygen precipitation control in czochralski-grown silicon cyrstals
JP3552278B2 (ja) * 1994-06-30 2004-08-11 三菱住友シリコン株式会社 シリコン単結晶の製造方法
KR960005669A (ko) 1994-07-21 1996-02-23 이헌조 흑백브라운관의 형광막 형성방법 및 장치
JP2874834B2 (ja) * 1994-07-29 1999-03-24 三菱マテリアル株式会社 シリコンウェーハのイントリンシックゲッタリング処理法
JP3285111B2 (ja) 1994-12-05 2002-05-27 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法
US5966282A (en) * 1994-12-20 1999-10-12 A. C. Data Systems, Inc. Power surge protection assembly
JPH08208374A (ja) 1995-01-25 1996-08-13 Nippon Steel Corp シリコン単結晶およびその製造方法
US5593494A (en) 1995-03-14 1997-01-14 Memc Electronic Materials, Inc. Precision controlled precipitation of oxygen in silicon
JP2826589B2 (ja) 1995-03-30 1998-11-18 住友シチックス株式会社 単結晶シリコン育成方法
JP3085146B2 (ja) * 1995-05-31 2000-09-04 住友金属工業株式会社 シリコン単結晶ウェーハおよびその製造方法
JPH08337490A (ja) 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
JP3006669B2 (ja) 1995-06-20 2000-02-07 信越半導体株式会社 結晶欠陥の均一なシリコン単結晶の製造方法およびその製造装置
JP4020987B2 (ja) * 1996-01-19 2007-12-12 信越半導体株式会社 ウエーハ周辺部に結晶欠陥がないシリコン単結晶およびその製造方法
US5958133A (en) * 1996-01-29 1999-09-28 General Signal Corporation Material handling system for growing high-purity crystals
JP3417515B2 (ja) 1996-03-22 2003-06-16 信越半導体株式会社 シリコン単結晶基板の結晶欠陥評価方法
DE19613282A1 (de) 1996-04-03 1997-10-09 Leybold Ag Vorrichtung zum Ziehen von Einkristallen
DE19637182A1 (de) 1996-09-12 1998-03-19 Wacker Siltronic Halbleitermat Verfahren zur Herstellung von Halbleiterscheiben aus Silicium mit geringer Defektdichte
JPH10152395A (ja) 1996-11-21 1998-06-09 Komatsu Electron Metals Co Ltd シリコン単結晶の製造方法
US5789309A (en) 1996-12-30 1998-08-04 Memc Electronic Materials, Inc. Method and system for monocrystalline epitaxial deposition
KR100237829B1 (ko) 1997-02-06 2000-01-15 윤종용 웨이퍼의 결함 분석방법
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
US6045610A (en) 1997-02-13 2000-04-04 Samsung Electronics Co., Ltd. Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnance
US5994761A (en) * 1997-02-26 1999-11-30 Memc Electronic Materials Spa Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
DE19711922A1 (de) * 1997-03-21 1998-09-24 Wacker Siltronic Halbleitermat Vorrichtung und Verfahren zum Ziehen eines Einkristalls
TW577939B (en) * 1997-04-09 2004-03-01 Memc Electronic Materials A process for growing a single crystal silicon ingot
EP0973962B1 (de) 1997-04-09 2002-07-03 MEMC Electronic Materials, Inc. Silicium mit niedriger fehlerdichte und idealem sauerstoffniederschlag
US6379642B1 (en) * 1997-04-09 2002-04-30 Memc Electronic Materials, Inc. Vacancy dominated, defect-free silicon
JPH1179889A (ja) 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
US5942032A (en) 1997-08-01 1999-08-24 Memc Electronic Materials, Inc. Heat shield assembly and method of growing vacancy rich single crystal silicon
US5922127A (en) 1997-09-30 1999-07-13 Memc Electronic Materials, Inc. Heat shield for crystal puller
JP3919308B2 (ja) 1997-10-17 2007-05-23 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法ならびにこの方法で製造されたシリコン単結晶およびシリコンウエーハ
JP3596257B2 (ja) 1997-11-19 2004-12-02 三菱住友シリコン株式会社 シリコン単結晶ウェーハの製造方法
US6245430B1 (en) * 1997-12-12 2001-06-12 Sumitomo Sitix Corporation Silicon single crystal wafer and manufacturing method for it
JP3634133B2 (ja) 1997-12-17 2005-03-30 信越半導体株式会社 結晶欠陥の少ないシリコン単結晶の製造方法及びシリコン単結晶ウエーハ
JP4147599B2 (ja) 1997-12-26 2008-09-10 株式会社Ｓｕｍｃｏ シリコン単結晶及びその製造方法
JP3627498B2 (ja) 1998-01-19 2005-03-09 信越半導体株式会社 シリコン単結晶の製造方法
JP3955375B2 (ja) 1998-01-19 2007-08-08 信越半導体株式会社 シリコン単結晶の製造方法およびシリコン単結晶ウエーハ
DE19823962A1 (de) 1998-05-28 1999-12-02 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Einkristalls
US6077343A (en) 1998-06-04 2000-06-20 Shin-Etsu Handotai Co., Ltd. Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing it
US6093913A (en) 1998-06-05 2000-07-25 Memc Electronic Materials, Inc Electrical heater for crystal growth apparatus with upper sections producing increased heating power compared to lower sections
WO2000013211A2 (en) 1998-09-02 2000-03-09 Memc Electronic Materials, Inc. Silicon on insulator structure from low defect density single crystal silicon
JP3904832B2 (ja) * 1998-10-14 2007-04-11 エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド 結晶成長導入欠陥を実質的に有さないエピタキシャルシリコンウエハ
CN1296526C (zh) * 1998-10-14 2007-01-24 Memc电子材料有限公司 热退火后的低缺陷密度单晶硅
US20020084451A1 (en) * 2000-12-29 2002-07-04 Mohr Thomas C. Silicon wafers substantially free of oxidation induced stacking faults

Also Published As

Publication number Publication date
KR20040065306A (ko) 2004-07-21
EP0972094B1 (de) 2001-10-04
EP1209258A3 (de) 2002-08-28
KR20010006227A (ko) 2001-01-26
SG165151A1 (en) 2010-10-28
EP1118697A2 (de) 2001-07-25
EP0973963A1 (de) 2000-01-26
SG105509A1 (en) 2004-08-27
KR20050049561A (ko) 2005-05-25
EP1209259A3 (de) 2003-08-20
JP4477569B2 (ja) 2010-06-09
EP1118697A3 (de) 2001-09-05
US6605150B2 (en) 2003-08-12
US20020007779A1 (en) 2002-01-24
US20020139294A1 (en) 2002-10-03
WO1998045510A1 (en) 1998-10-15
CN1261928A (zh) 2000-08-02
DE69806137T2 (de) 2002-11-21
JP2004155655A (ja) 2004-06-03
US6287380B1 (en) 2001-09-11
US20040089224A1 (en) 2004-05-13
US6632278B2 (en) 2003-10-14
SG105510A1 (en) 2004-08-27
MY127383A (en) 2006-11-30
CN1280455C (zh) 2006-10-18
TW577939B (en) 2004-03-01
US6409827B2 (en) 2002-06-25
WO1998045508A1 (en) 1998-10-15
DE69801903T2 (de) 2002-03-28
MY120036A (en) 2005-08-30
US6254672B1 (en) 2001-07-03
CN1255169A (zh) 2000-05-31
EP1209259A2 (de) 2002-05-29
TW494146B (en) 2002-07-11
JP4274973B2 (ja) 2009-06-10
EP1209258A2 (de) 2002-05-29
US20010025597A1 (en) 2001-10-04
DE69824647D1 (de) 2004-07-22
CN100547122C (zh) 2009-10-07
JP2003192492A (ja) 2003-07-09
JP4291559B2 (ja) 2009-07-08
EP0973964A1 (de) 2000-01-26
JP2003192490A (ja) 2003-07-09
DE69806137D1 (de) 2002-07-25
DE69831618T2 (de) 2006-06-29
EP1273684A2 (de) 2003-01-08
JP2001500468A (ja) 2001-01-16
US5919302A (en) 1999-07-06
MY120441A (en) 2005-10-31
US20040070012A1 (en) 2004-04-15
JP3782387B2 (ja) 2006-06-07
US6409826B2 (en) 2002-06-25
KR100508048B1 (ko) 2005-08-17
DE69801903D1 (de) 2001-11-08
EP0972094A1 (de) 2000-01-19
JP3449731B2 (ja) 2003-09-22
CN101070621B (zh) 2012-09-05
JP2006056779A (ja) 2006-03-02
DE69824647T2 (de) 2005-06-09
WO1998045509A1 (en) 1998-10-15
JP2006062960A (ja) 2006-03-09
CN1854353A (zh) 2006-11-01
EP1118697B1 (de) 2003-04-02
DE69807676D1 (de) 2002-10-10
DE69813041T2 (de) 2004-01-15
CN1253610C (zh) 2006-04-26
JP4299523B2 (ja) 2009-07-22
US20050205000A1 (en) 2005-09-22
MY127584A (en) 2006-12-29
JP2001518874A (ja) 2001-10-16
EP1209258B1 (de) 2004-06-16
CN101070621A (zh) 2007-11-14
JP3449730B2 (ja) 2003-09-22
DE69831618D1 (de) 2005-10-20
JP4313356B2 (ja) 2009-08-12
KR20010006229A (ko) 2001-01-26
CN100595351C (zh) 2010-03-24
KR20060002028A (ko) 2006-01-06
MY132874A (en) 2007-10-31
CN1936112A (zh) 2007-03-28
EP0973964B1 (de) 2002-09-04
DE69807676T2 (de) 2003-04-24
KR20010006182A (ko) 2001-01-26
EP1273684A3 (de) 2003-11-26
TWI257962B (en) 2006-07-11
CN1280454C (zh) 2006-10-18
JP2003192493A (ja) 2003-07-09
US6638357B2 (en) 2003-10-28
DE69813041D1 (de) 2003-05-08
CN1257556A (zh) 2000-06-21
MY127594A (en) 2006-12-29
CN1936113A (zh) 2007-03-28
JP2000513696A (ja) 2000-10-17
US20010020437A1 (en) 2001-09-13
CN1936112B (zh) 2011-05-11
US20020170485A1 (en) 2002-11-21
JP3544676B2 (ja) 2004-07-21
EP0973963B1 (de) 2002-06-19
EP1209259B1 (de) 2009-03-25
EP1273684B1 (de) 2005-09-14

Similar Documents

Publication Publication Date Title
DE69840690D1 (de) Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte
DE69841511D1 (de) Halbleiter
ATE250583T1 (de) Substituierte 3-cyanochinoline
FI970468A0 (fi) Anvaendningspraoksberoende bokstavsmatning med nummertangenter
NO993048L (no) Halvlederelement
NO20001494L (no) Overligger
ID19856A (id) Piranti stempel
DE59609022D1 (de) Verbindungssubstrat
DE59813487D1 (de) Substituierte 4-benzoyl-pyrazole
FI974023A0 (fi) Taetningskonstruktion foer suglaogan av en sugvals i en pappersmaskin/en kartongmaskin
DE69841156D1 (de) Halbleiter
DE69822710D1 (de) Kühlkörperbefestigung
DE69841667D1 (de) Halbleiteranordnungen mit MOS-Gatter
FI973312A0 (fi) Foerfarande foer indikering av en abonnent i en kedjad V5-anslutning
FI972800A0 (fi) Behandling av signaleringsmeddelande i ATM-nod
DK0960100T3 (da) Substituerede 4-benzoyl-pyrazoler
NO972973D0 (no) Renseanlegg
FI973582A0 (fi) Maetning av faedningsmarginal i radiosystem
ID24079A (id) Aminoheteroksiklilamida tersubstitusi
FI973860A0 (fi) Foerfarande foer saekerstaellande av noedkommunikation i en kedjad V5-anslutning
FI971730A0 (fi) Munstyckesarrangemang i blaoslaodan av en pappersmaskin
ITRM970524A3 (it) Il toglisinghiozzo
DE59807877D1 (de) Substituierte 4-benzoyl-pyrazole
FI974544A0 (fi) Anordning i en med manoeverplats foersedd lastkran
FI972847A0 (fi) Foerfarande foer hantering av aonga i en fibreringsprocess

Legal Events

Date Code Title Description
8364 No opposition during term of opposition