DE69916256D1 - Verfahren und vorrichtung zum messen von substrattemperaturen - Google Patents

Verfahren und vorrichtung zum messen von substrattemperaturen

Info

Publication number
DE69916256D1
DE69916256D1 DE69916256T DE69916256T DE69916256D1 DE 69916256 D1 DE69916256 D1 DE 69916256D1 DE 69916256 T DE69916256 T DE 69916256T DE 69916256 T DE69916256 T DE 69916256T DE 69916256 D1 DE69916256 D1 DE 69916256D1
Authority
DE
Germany
Prior art keywords
substrate temperatures
measuring substrate
measuring
temperatures
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69916256T
Other languages
English (en)
Other versions
DE69916256T2 (de
Inventor
W Peuse
E Miner
Mark Yam
Aaron Hunter
Peter Knoot
Jason Mershon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of DE69916256D1 publication Critical patent/DE69916256D1/de
Publication of DE69916256T2 publication Critical patent/DE69916256T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
    • G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/06—Arrangements for eliminating effects of disturbing radiation; Arrangements for compensating changes in sensitivity
    • G01J5/064—Ambient temperature sensor; Housing temperature sensor; Constructional details thereof
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0815—Light concentrators, collectors or condensers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0818—Waveguides
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0818—Waveguides
    • G01J5/0821—Optical fibres
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0846—Optical arrangements having multiple detectors for performing different types of detection, e.g. using radiometry and reflectometry channels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/02—Constructional details
    • G01J5/08—Optical arrangements
    • G01J5/0887—Integrating cavities mimicking black bodies, wherein the heat propagation between the black body and the measuring element does not occur within a solid; Use of bodies placed inside the fluid stream for measurement of the temperature of gases; Use of the reemission from a surface, e.g. reflective surface; Emissivity enhancement by multiple reflections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/52—Radiation pyrometry, e.g. infrared or optical thermometry using comparison with reference sources, e.g. disappearing-filament pyrometer
    • G01J5/53—Reference sources, e.g. standard lamps; Black bodies
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/80—Calibration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69916256T 1998-03-18 1999-02-23 Verfahren und vorrichtung zum messen von substrattemperaturen Expired - Fee Related DE69916256T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44217 1998-03-18
US09/044,217 US6179466B1 (en) 1994-12-19 1998-03-18 Method and apparatus for measuring substrate temperatures
PCT/US1999/003978 WO1999047901A1 (en) 1998-03-18 1999-02-23 Method and apparatus for measuring substrate temperatures

Publications (2)

Publication Number Publication Date
DE69916256D1 true DE69916256D1 (de) 2004-05-13
DE69916256T2 DE69916256T2 (de) 2005-04-14

Family

ID=21931132

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69916256T Expired - Fee Related DE69916256T2 (de) 1998-03-18 1999-02-23 Verfahren und vorrichtung zum messen von substrattemperaturen

Country Status (7)

Country Link
US (1) US6179466B1 (de)
EP (1) EP1064527B1 (de)
JP (1) JP4511724B2 (de)
KR (1) KR100396423B1 (de)
DE (1) DE69916256T2 (de)
TW (1) TW455676B (de)
WO (1) WO1999047901A1 (de)

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DE10119047B4 (de) * 2000-04-21 2010-12-09 Tokyo Electron Ltd. Thermische Bearbeitungsvorrichtung und thermisches Bearbeitungsverfahren
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JP4698807B2 (ja) * 2000-09-26 2011-06-08 東京エレクトロン株式会社 半導体基板熱処理装置
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US6987240B2 (en) * 2002-04-18 2006-01-17 Applied Materials, Inc. Thermal flux processing by scanning
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US7112763B2 (en) * 2004-10-26 2006-09-26 Applied Materials, Inc. Method and apparatus for low temperature pyrometry useful for thermally processing silicon wafers
US7767927B2 (en) 2005-05-16 2010-08-03 Ultratech, Inc. Methods and apparatus for remote temperature measurement of a specular surface
CN101288035B (zh) * 2005-09-14 2013-06-19 马特森技术有限公司 可重复热处理的方法和设备
US7691204B2 (en) * 2005-09-30 2010-04-06 Applied Materials, Inc. Film formation apparatus and methods including temperature and emissivity/pattern compensation
US8372203B2 (en) * 2005-09-30 2013-02-12 Applied Materials, Inc. Apparatus temperature control and pattern compensation
US20070215049A1 (en) * 2006-03-14 2007-09-20 Applied Materials, Inc. Transfer of wafers with edge grip
WO2008131513A1 (en) * 2007-05-01 2008-11-06 Mattson Technology Canada, Inc. Irradiance pulse heat-treating methods and apparatus
US8047706B2 (en) * 2007-12-07 2011-11-01 Asm America, Inc. Calibration of temperature control system for semiconductor processing chamber
US8283607B2 (en) * 2008-04-09 2012-10-09 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US8548311B2 (en) 2008-04-09 2013-10-01 Applied Materials, Inc. Apparatus and method for improved control of heating and cooling of substrates
US8367983B2 (en) * 2008-04-09 2013-02-05 Applied Materials, Inc. Apparatus including heating source reflective filter for pyrometry
US7985945B2 (en) * 2008-05-09 2011-07-26 Applied Materials, Inc. Method for reducing stray light in a rapid thermal processing chamber by polarization
US20090298300A1 (en) * 2008-05-09 2009-12-03 Applied Materials, Inc. Apparatus and Methods for Hyperbaric Rapid Thermal Processing
KR20090131147A (ko) * 2008-06-17 2009-12-28 에이피시스템 주식회사 포토마스크 베이킹 장치
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KR101733179B1 (ko) 2010-10-15 2017-05-08 맛선 테크놀러지, 인코포레이티드 워크피스를 노출할 조사 펄스의 형상을 결정하는 방법, 장치 및 매체
JP5578028B2 (ja) 2010-10-29 2014-08-27 セイコーエプソン株式会社 温度測定装置および温度測定方法
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Also Published As

Publication number Publication date
DE69916256T2 (de) 2005-04-14
EP1064527B1 (de) 2004-04-07
JP4511724B2 (ja) 2010-07-28
EP1064527A1 (de) 2001-01-03
TW455676B (en) 2001-09-21
WO1999047901A1 (en) 1999-09-23
KR100396423B1 (ko) 2003-09-02
JP2002506988A (ja) 2002-03-05
KR20010042000A (ko) 2001-05-25
US6179466B1 (en) 2001-01-30

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8370 Indication related to discontinuation of the patent is to be deleted
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8339 Ceased/non-payment of the annual fee