DE69921909D1 - Sinterkörper aus Aluminiumnitrid und Verfahren zur Herstellung desselben - Google Patents

Sinterkörper aus Aluminiumnitrid und Verfahren zur Herstellung desselben

Info

Publication number
DE69921909D1
DE69921909D1 DE69921909T DE69921909T DE69921909D1 DE 69921909 D1 DE69921909 D1 DE 69921909D1 DE 69921909 T DE69921909 T DE 69921909T DE 69921909 T DE69921909 T DE 69921909T DE 69921909 D1 DE69921909 D1 DE 69921909D1
Authority
DE
Germany
Prior art keywords
manufacturing
same
sintered body
aluminum nitride
nitride sintered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69921909T
Other languages
English (en)
Other versions
DE69921909T2 (de
Inventor
Yasuhisa Yushio
Hirohiko Nakata
Kazutaka Sasaki
Masuhiro Natsuhara
Motoyuki Tanaka
Yasuhiro Murase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69921909D1 publication Critical patent/DE69921909D1/de
Application granted granted Critical
Publication of DE69921909T2 publication Critical patent/DE69921909T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69921909T 1998-07-22 1999-07-22 Sinterkörper aus Aluminiumnitrid und Verfahren zur Herstellung desselben Expired - Fee Related DE69921909T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20635398A JP4812144B2 (ja) 1998-07-22 1998-07-22 窒化アルミニウム焼結体及びその製造方法

Publications (2)

Publication Number Publication Date
DE69921909D1 true DE69921909D1 (de) 2004-12-23
DE69921909T2 DE69921909T2 (de) 2005-04-21

Family

ID=16521919

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69921909T Expired - Fee Related DE69921909T2 (de) 1998-07-22 1999-07-22 Sinterkörper aus Aluminiumnitrid und Verfahren zur Herstellung desselben

Country Status (7)

Country Link
US (2) US6271163B1 (de)
EP (1) EP0974565B1 (de)
JP (1) JP4812144B2 (de)
KR (3) KR100353387B1 (de)
CN (2) CN1689732B (de)
CA (1) CA2277346C (de)
DE (1) DE69921909T2 (de)

Families Citing this family (71)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4812144B2 (ja) * 1998-07-22 2011-11-09 住友電気工業株式会社 窒化アルミニウム焼結体及びその製造方法
US6900149B1 (en) * 1999-09-06 2005-05-31 Ibiden Co., Ltd. Carbon-containing aluminum nitride sintered compact and ceramic substrate for use in equipment for manufacturing or inspecting semiconductor
US20030098299A1 (en) * 2000-03-06 2003-05-29 Ibiden Co., Ltd. Ceramic heater
FR2845078B1 (fr) * 2002-09-26 2004-10-29 Alstom PROCEDE DE FABRICATION D'UN SUBSTRAT EN NITRURE D'ALUMINIUM AlN
JP2005281046A (ja) * 2004-03-29 2005-10-13 Ngk Insulators Ltd 窒化アルミニウム基板及びその製造方法
EP1731482B1 (de) * 2004-03-29 2017-01-25 Denka Company Limited Aluminiumnitridpulver und aluminiumnitridsinterkörper
US8052918B2 (en) * 2004-07-21 2011-11-08 Nissin Kogyo Co., Ltd. Carbon-based material and method of producing the same, and composite material and method of producing the same
JP4279220B2 (ja) * 2004-09-09 2009-06-17 日信工業株式会社 複合材料及びその製造方法、複合金属材料及びその製造方法
JP4740002B2 (ja) * 2006-03-20 2011-08-03 日本碍子株式会社 窒化アルミニウム焼結体、半導体製造装置用部材、及び窒化アルミニウム焼結体の製造方法
CN101638319B (zh) * 2008-07-29 2012-12-12 比亚迪股份有限公司 一种氮化铝复合材料的制备方法
WO2011139619A1 (en) 2010-04-26 2011-11-10 Hsio Technologies, Llc Semiconductor device package adapter
US8955215B2 (en) 2009-05-28 2015-02-17 Hsio Technologies, Llc High performance surface mount electrical interconnect
US9536815B2 (en) 2009-05-28 2017-01-03 Hsio Technologies, Llc Semiconductor socket with direct selective metalization
US9276336B2 (en) 2009-05-28 2016-03-01 Hsio Technologies, Llc Metalized pad to electrical contact interface
WO2012061008A1 (en) 2010-10-25 2012-05-10 Hsio Technologies, Llc High performance electrical circuit structure
US9054097B2 (en) 2009-06-02 2015-06-09 Hsio Technologies, Llc Compliant printed circuit area array semiconductor device package
US8912812B2 (en) 2009-06-02 2014-12-16 Hsio Technologies, Llc Compliant printed circuit wafer probe diagnostic tool
US9318862B2 (en) 2009-06-02 2016-04-19 Hsio Technologies, Llc Method of making an electronic interconnect
US8525346B2 (en) 2009-06-02 2013-09-03 Hsio Technologies, Llc Compliant conductive nano-particle electrical interconnect
WO2010141298A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Composite polymer-metal electrical contacts
US9320133B2 (en) 2009-06-02 2016-04-19 Hsio Technologies, Llc Electrical interconnect IC device socket
US9930775B2 (en) 2009-06-02 2018-03-27 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US8988093B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Bumped semiconductor wafer or die level electrical interconnect
WO2014011226A1 (en) 2012-07-10 2014-01-16 Hsio Technologies, Llc Hybrid printed circuit assembly with low density main core and embedded high density circuit regions
US8789272B2 (en) 2009-06-02 2014-07-29 Hsio Technologies, Llc Method of making a compliant printed circuit peripheral lead semiconductor test socket
WO2010141303A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Resilient conductive electrical interconnect
US9184527B2 (en) 2009-06-02 2015-11-10 Hsio Technologies, Llc Electrical connector insulator housing
US8618649B2 (en) 2009-06-02 2013-12-31 Hsio Technologies, Llc Compliant printed circuit semiconductor package
US9276339B2 (en) 2009-06-02 2016-03-01 Hsio Technologies, Llc Electrical interconnect IC device socket
US8610265B2 (en) 2009-06-02 2013-12-17 Hsio Technologies, Llc Compliant core peripheral lead semiconductor test socket
WO2010141266A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit peripheral lead semiconductor package
WO2010147934A1 (en) 2009-06-16 2010-12-23 Hsio Technologies, Llc Semiconductor die terminal
US9603249B2 (en) 2009-06-02 2017-03-21 Hsio Technologies, Llc Direct metalization of electrical circuit structures
US8987886B2 (en) 2009-06-02 2015-03-24 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US9414500B2 (en) 2009-06-02 2016-08-09 Hsio Technologies, Llc Compliant printed flexible circuit
US9136196B2 (en) 2009-06-02 2015-09-15 Hsio Technologies, Llc Compliant printed circuit wafer level semiconductor package
US9196980B2 (en) 2009-06-02 2015-11-24 Hsio Technologies, Llc High performance surface mount electrical interconnect with external biased normal force loading
WO2010141313A1 (en) 2009-06-02 2010-12-09 Hsio Technologies, Llc Compliant printed circuit socket diagnostic tool
WO2012074963A1 (en) 2010-12-01 2012-06-07 Hsio Technologies, Llc High performance surface mount electrical interconnect
US9613841B2 (en) 2009-06-02 2017-04-04 Hsio Technologies, Llc Area array semiconductor device package interconnect structure with optional package-to-package or flexible circuit to package connection
US8803539B2 (en) 2009-06-03 2014-08-12 Hsio Technologies, Llc Compliant wafer level probe assembly
US8981568B2 (en) 2009-06-16 2015-03-17 Hsio Technologies, Llc Simulated wirebond semiconductor package
US9320144B2 (en) 2009-06-17 2016-04-19 Hsio Technologies, Llc Method of forming a semiconductor socket
US8981809B2 (en) 2009-06-29 2015-03-17 Hsio Technologies, Llc Compliant printed circuit semiconductor tester interface
US8984748B2 (en) 2009-06-29 2015-03-24 Hsio Technologies, Llc Singulated semiconductor device separable electrical interconnect
US9136819B2 (en) * 2012-10-27 2015-09-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Bulk acoustic wave resonator having piezoelectric layer with multiple dopants
US8609254B2 (en) 2010-05-19 2013-12-17 Sanford Process Corporation Microcrystalline anodic coatings and related methods therefor
US8512872B2 (en) 2010-05-19 2013-08-20 Dupalectpa-CHN, LLC Sealed anodic coatings
US9689897B2 (en) 2010-06-03 2017-06-27 Hsio Technologies, Llc Performance enhanced semiconductor socket
US8758067B2 (en) 2010-06-03 2014-06-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US9350093B2 (en) 2010-06-03 2016-05-24 Hsio Technologies, Llc Selective metalization of electrical connector or socket housing
US10159154B2 (en) 2010-06-03 2018-12-18 Hsio Technologies, Llc Fusion bonded liquid crystal polymer circuit structure
TWI447067B (zh) * 2011-08-04 2014-08-01 氮化鋁製造方法
US9761520B2 (en) 2012-07-10 2017-09-12 Hsio Technologies, Llc Method of making an electrical connector having electrodeposited terminals
US20140066287A1 (en) * 2012-08-31 2014-03-06 CMC Laboratories, Inc. Low Cost Manufacture of High Reflectivity Aluminum Nitride Substrates
EP2894126B1 (de) * 2012-09-07 2018-08-01 Tokuyama Corporation Verfahren zur herstellung von wasserfestem aluminiumnitridpulver
EP2803756A1 (de) 2013-05-13 2014-11-19 Atotech Deutschland GmbH Verfahren zur Ablagerung dicker Kupferschichten auf gesinterten Materialien
JP5966199B2 (ja) * 2013-05-31 2016-08-10 株式会社デンソー 圧電体薄膜及びその製造方法
US10506722B2 (en) 2013-07-11 2019-12-10 Hsio Technologies, Llc Fusion bonded liquid crystal polymer electrical circuit structure
US10667410B2 (en) 2013-07-11 2020-05-26 Hsio Technologies, Llc Method of making a fusion bonded circuit structure
US10340885B2 (en) 2014-05-08 2019-07-02 Avago Technologies International Sales Pte. Limited Bulk acoustic wave devices with temperature-compensating niobium alloy electrodes
KR102339563B1 (ko) * 2014-06-02 2021-12-16 주식회사 미코세라믹스 플라즈마 화학기상증착 장치용 배플 구조물 및 이의 제조 방법
US9755335B2 (en) 2015-03-18 2017-09-05 Hsio Technologies, Llc Low profile electrical interconnect with fusion bonded contact retention and solder wick reduction
CN106220186A (zh) * 2016-08-05 2016-12-14 郭迎庆 一种陶瓷基电子基板材料的制备方法
CN110691755B (zh) * 2017-05-22 2023-04-07 东洋铝株式会社 氮化铝系粉末及其制造方法
WO2019021919A1 (ja) * 2017-07-24 2019-01-31 昭和電工株式会社 窒化アルミニウム焼結体およびその製造方法
CN108706980A (zh) * 2018-06-27 2018-10-26 深圳市商德先进陶瓷股份有限公司 氮化铝陶瓷及其制备方法、静电卡盘和应用
JP6589021B1 (ja) 2018-08-06 2019-10-09 株式会社Maruwa 球状窒化アルミニウム粉末、及び、球状窒化アルミニウム粉末の製造方法
KR20210036141A (ko) * 2019-09-25 2021-04-02 주식회사 케이씨씨 질화알루미늄 소결체 및 질화알루미늄 소결체의 제조방법
CN115403043B (zh) * 2022-08-19 2023-07-11 四川大学 一种稀土元素碳化物、氮化物或碳氮化物粉末的制备方法
CN115304383A (zh) * 2022-08-19 2022-11-08 广东省先进陶瓷材料科技有限公司 一种氮化铝基板及其制备方法与应用

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855377A (ja) 1981-09-28 1983-04-01 株式会社東芝 窒化アルミニウム焼結体の製造方法
US4578234A (en) 1984-10-01 1986-03-25 General Electric Company Process of pressureless sintering to produce dense high thermal conductivity ceramic body of deoxidized aluminum nitride
US4578233A (en) 1984-11-01 1986-03-25 General Electric Company Pressureless sintering process to produce high thermal conductivity ceramic body of aluminum nitride
JPH0649613B2 (ja) 1984-11-08 1994-06-29 株式会社東芝 窒化アルミニウム焼結体およびその製造方法
US4746637A (en) 1984-11-08 1988-05-24 Kabushiki Kaisha Toshiba Aluminum nitride sintered body and process for producing the same
US4578365A (en) 1984-11-26 1986-03-25 General Electric Company High thermal conductivity ceramic body of aluminum nitride
US4578364A (en) 1984-12-07 1986-03-25 General Electric Company High thermal conductivity ceramic body of aluminum nitride
US4578232A (en) 1984-12-17 1986-03-25 General Electric Company Pressureless sintering process to produce high thermal conductivity ceramic body of aluminum nitride
US5001089A (en) 1985-06-28 1991-03-19 Kabushiki Kaisha Toshiba Aluminum nitride sintered body
DE3650264T2 (de) 1985-06-28 1995-08-24 Toshiba Kawasaki Kk Aluminiumnitridsinterkörper und Verfahren zu seiner Herstellung.
JPH0717454B2 (ja) * 1985-06-28 1995-03-01 株式会社東芝 窒化アルミニウム焼結体およびその製造方法
US5154863A (en) 1985-10-31 1992-10-13 Kyocera Corporation Aluminum nitride-based sintered body and process for the production thereof
JPS63190761A (ja) * 1987-01-30 1988-08-08 京セラ株式会社 窒化アルミニウム質焼結体
US5314850A (en) * 1985-10-31 1994-05-24 Kyocera Corporation Aluminum nitride sintered body and production thereof
EP0235682B2 (de) 1986-02-20 1997-11-12 Kabushiki Kaisha Toshiba Gesinterter Körper aus Aluminiumnitrid mit leitender metallisierter Schicht
JP2578114B2 (ja) 1987-05-08 1997-02-05 株式会社東芝 高熱伝導性窒化アルミニウム焼結体の製造方法
JPH01203270A (ja) 1988-02-08 1989-08-16 Sumitomo Electric Ind Ltd 高熱伝導性窒化アルミニウム焼結体及びその製造法
US5273700A (en) * 1990-10-29 1993-12-28 Sumitomo Electric Industries Ltd. Aluminum nitride sintered body and process for producing the same
JPH0647085B2 (ja) 1991-09-24 1994-06-22 三菱化工機株式会社 スクリュー型遠心分離機
JP3141505B2 (ja) * 1992-03-03 2001-03-05 日立金属株式会社 窒化アルミニウム焼結体およびその製造方法
US6004705A (en) * 1992-07-07 1999-12-21 Toray Industries, Inc. Photosensitive ceramics green sheet
JP3650140B2 (ja) 1993-06-14 2005-05-18 オリンパス株式会社 手術用顕微鏡
JPH075374A (ja) 1993-06-15 1995-01-10 Nikon Corp Ｘ線光学素子保持器
JPH075375A (ja) 1993-06-15 1995-01-10 Nikon Corp Ｘ線観察用の生体試料槽
JP2949653B2 (ja) 1993-06-17 1999-09-20 株式会社モリテックス 硬性イメ−ジスコ−プ
JPH0738491A (ja) 1993-07-20 1995-02-07 Fujitsu General Ltd 無線呼出システム
US5482903A (en) * 1993-12-22 1996-01-09 International Business Machines Corporation Aluminum nitride body utilizing a vitreous sintering additive
JPH075372A (ja) 1994-01-31 1995-01-10 Topcon Corp 双眼実体顕微鏡
JP2598236B2 (ja) * 1994-09-07 1997-04-09 株式会社東芝 半導体装置
JP3100871B2 (ja) * 1995-07-11 2000-10-23 株式会社東芝 窒化アルミニウム焼結体
CN1130607A (zh) * 1995-11-17 1996-09-11 清华大学 高热导率氮化铝陶瓷的制造方法
DE29721502U1 (de) * 1996-12-21 1998-04-23 Klein Schanzlin & Becker Ag Strangregulierarmatur
CN1081178C (zh) * 1998-07-08 2002-03-20 中国科学院上海硅酸盐研究所 高热导氮化铝陶瓷的制备方法
JP4812144B2 (ja) * 1998-07-22 2011-11-09 住友電気工業株式会社 窒化アルミニウム焼結体及びその製造方法

Also Published As

Publication number Publication date
KR100353387B1 (ko) 2002-09-18
KR20020036986A (ko) 2002-05-17
KR100353386B1 (ko) 2002-09-19
KR20000011846A (ko) 2000-02-25
CA2277346A1 (en) 2000-01-22
CN1689732B (zh) 2010-06-23
US20010016551A1 (en) 2001-08-23
CN1242349A (zh) 2000-01-26
US6428741B2 (en) 2002-08-06
CN1689732A (zh) 2005-11-02
KR100353385B1 (ko) 2002-09-19
DE69921909T2 (de) 2005-04-21
US6271163B1 (en) 2001-08-07
JP4812144B2 (ja) 2011-11-09
CA2277346C (en) 2004-11-23
EP0974565A1 (de) 2000-01-26
CN1305807C (zh) 2007-03-21
JP2000044342A (ja) 2000-02-15
KR20020036985A (ko) 2002-05-17
EP0974565B1 (de) 2004-11-17

Similar Documents

Publication Publication Date Title
DE69921909D1 (de) Sinterkörper aus Aluminiumnitrid und Verfahren zur Herstellung desselben
DE19781457T1 (de) Thermoelektrisches Element und Verfahren zur Herstellung desselben
DE59802893D1 (de) Nichtkreisförmige Kühlbohrung und Verfahren zur Herstellung derselben
DE60140736D1 (de) Wabenförmige struktur und verfahren zur herstellung derselben
DE69805112D1 (de) Biosensor und Verfahren zur Herstellung desselben
DE60217785D1 (de) Flasche und Verfahren zur Herstellung derselben
DE69818537D1 (de) Wischtuch und Verfahren zur Herstellung
DE10196110T1 (de) Elektrisch leitfähige Harz-Zusammensetzung und Verfahren zur Herstellung derselben
DE69705331D1 (de) Poröser Siliciumnitridkörper hoher Festigkeit und Verfahren zur Herstellung desselben
DE69912541D1 (de) Aluminiumoxidsinterkörper und Verfahren zu seiner Herstellung
DE60235798D1 (de) Wabenförmige struktur und verfahren zur herstellung derselben
DE69921533D1 (de) Schleifwerkzeug und Verfahren zur Herstellung desselben
DE69901178T2 (de) Nichtgesinterte elektrode und verfahren zur herstellung
DE69936827D1 (de) Baugruppe und verfahren zur herstellung
DE69703195D1 (de) Sinterkörper aus kubischem Bornitrid und Verfahren zur Herstellung desselben
DE60118085D1 (de) Silicium/Siliciumkarbid-Komposit und Verfahren zur Herstellung desselben
DE69508885T2 (de) Halbleiterdiode und Verfahren zur Herstellung
DE69601234T2 (de) Gesinterter Körper auf Siliciumnitridbasis und Verfahren zur Herstellung desselben
DE50100019D1 (de) Einkristallstab und Verfahren zur Herstellung desselben
DE60029281D1 (de) Sinterkörper aus Aluminiumnitrid und Verfahren zu seiner Herstellung
DE69914175D1 (de) Thermoplastische Zusammensetzung und Verfahren zur Herstellung derselben
DE69514413D1 (de) Keramische Beschichtigung und Verfahren zur Herstellung
DE69838683D1 (de) Halbleiterbauelement und verfahren zur herstellung
DE69927143D1 (de) Halbleiteranordnung und verfahren zur herstellung
DE69800026D1 (de) GaAs-basierender MOSFET und Verfahren zur Herstellung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee