DE69922942D1 - Messung einer difraktionsstruktur, breitbandig, polarisierend und ellipsometrisch und eine unterliegende struktur - Google Patents

Messung einer difraktionsstruktur, breitbandig, polarisierend und ellipsometrisch und eine unterliegende struktur

Info

Publication number
DE69922942D1
DE69922942D1 DE69922942T DE69922942T DE69922942D1 DE 69922942 D1 DE69922942 D1 DE 69922942D1 DE 69922942 T DE69922942 T DE 69922942T DE 69922942 T DE69922942 T DE 69922942T DE 69922942 D1 DE69922942 D1 DE 69922942D1
Authority
DE
Germany
Prior art keywords
difraction
ellipsometric
polarizing
broadband
measure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69922942T
Other languages
English (en)
Other versions
DE69922942T2 (de
Inventor
Yiping Xu
Ibrahim Abdulhalim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
KLA Corp
Original Assignee
KLA Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by KLA Tencor Corp filed Critical KLA Tencor Corp
Application granted granted Critical
Publication of DE69922942D1 publication Critical patent/DE69922942D1/de
Publication of DE69922942T2 publication Critical patent/DE69922942T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/47—Scattering, i.e. diffuse reflection
    • G01N21/4788—Diffraction
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G01N2021/213—Spectrometric ellipsometry
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N2021/556—Measuring separately scattering and specular
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N21/95607—Inspecting patterns on the surface of objects using a comparative method
    • G01N2021/95615—Inspecting patterns on the surface of objects using a comparative method with stored comparision signal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69922942T 1998-03-06 1999-02-25 Messung einer difraktionsstruktur, breitbandig, polarisierend und ellipsometrisch und eine unterliegende struktur Expired - Lifetime DE69922942T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US36557 1998-03-06
US09/036,557 US6483580B1 (en) 1998-03-06 1998-03-06 Spectroscopic scatterometer system
PCT/US1999/004053 WO1999045340A1 (en) 1998-03-06 1999-02-25 Measuring a diffracting structure, broadband, polarized, ellipsometric, and an underlying structure

Publications (2)

Publication Number Publication Date
DE69922942D1 true DE69922942D1 (de) 2005-02-03
DE69922942T2 DE69922942T2 (de) 2006-03-30

Family

ID=21889260

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69922942T Expired - Lifetime DE69922942T2 (de) 1998-03-06 1999-02-25 Messung einer difraktionsstruktur, breitbandig, polarisierend und ellipsometrisch und eine unterliegende struktur

Country Status (6)

Country Link
US (6) US6483580B1 (de)
EP (2) EP1073876B1 (de)
JP (6) JP4633254B2 (de)
AU (1) AU3310999A (de)
DE (1) DE69922942T2 (de)
WO (1) WO1999045340A1 (de)

Families Citing this family (253)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6483580B1 (en) 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US20020030813A1 (en) * 1999-03-29 2002-03-14 Norton Adam E. Spectroscopic measurement system using an off-axis spherical mirror and refractive elements
US6690473B1 (en) * 1999-02-01 2004-02-10 Sensys Instruments Corporation Integrated surface metrology
US6184984B1 (en) 1999-02-09 2001-02-06 Kla-Tencor Corporation System for measuring polarimetric spectrum and other properties of a sample
IL130874A (en) * 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US8531678B2 (en) 1999-07-09 2013-09-10 Nova Measuring Instruments, Ltd. Method and system for measuring patterned structures
US6432729B1 (en) * 1999-09-29 2002-08-13 Lam Research Corporation Method for characterization of microelectronic feature quality
DE19950559B4 (de) 1999-10-20 2006-08-17 Steag Eta-Optik Gmbh Verfahren zum Bestimmen von geometrischen Strukturen auf oder in einem Substrat sowie von Materialparametern
EP1257781A4 (de) * 2000-01-26 2006-12-13 Timbre Tech Inc Benützung eines vorspeichers in intraschichtberechnungen für schnellen rigorösen analysen von gekoppelten wellenn
US7230699B1 (en) * 2002-10-15 2007-06-12 J.A. Woollam Co., Inc. Sample orientation system and method
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6689519B2 (en) 2000-05-04 2004-02-10 Kla-Tencor Technologies Corp. Methods and systems for lithography process control
US20060141376A1 (en) * 2004-12-22 2006-06-29 Ady Levy Methods and systems for controlling variation in dimensions of patterned features across a wafer
US6462817B1 (en) 2000-05-12 2002-10-08 Carlos Strocchia-Rivera Method of monitoring ion implants by examination of an overlying masking material
WO2002014840A2 (en) 2000-08-10 2002-02-21 Sensys Instruments Corporation Database interpolation method for optical measurement of diffractive microstructures
US7541201B2 (en) 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US7317531B2 (en) * 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
IL138552A (en) 2000-09-19 2006-08-01 Nova Measuring Instr Ltd Measurement of transverse displacement by optical method
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
EP1319244A1 (de) * 2000-09-20 2003-06-18 Kla-Tencor Inc. Methode und system zur halbleiterherstellung
US7115858B1 (en) * 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
US7099005B1 (en) * 2000-09-27 2006-08-29 Kla-Tencor Technologies Corporation System for scatterometric measurements and applications
EP1352415A2 (de) * 2000-10-23 2003-10-15 Applied Materials, Inc. Kontrolle der substratbearbeitung mittels reflektierter strahlung
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6768983B1 (en) * 2000-11-28 2004-07-27 Timbre Technologies, Inc. System and method for real-time library generation of grating profiles
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6819426B2 (en) 2001-02-12 2004-11-16 Therma-Wave, Inc. Overlay alignment metrology using diffraction gratings
US6864971B2 (en) * 2001-03-27 2005-03-08 Isoa, Inc. System and method for performing optical inspection utilizing diffracted light
US20020177245A1 (en) * 2001-03-29 2002-11-28 Sonderman Thomas J. Method and apparatus for controlling feature critical dimensions based on scatterometry derived profile
US20030002043A1 (en) 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
US6898537B1 (en) 2001-04-27 2005-05-24 Nanometrics Incorporated Measurement of diffracting structures using one-half of the non-zero diffracted orders
US7052575B1 (en) * 2001-04-30 2006-05-30 Advanced Micro Devices, Inc. System and method for active control of etch process
WO2002095372A1 (en) * 2001-05-22 2002-11-28 Horiba, Ltd. Thin-film characteristic measuring method using spectroellipsometer
US7382447B2 (en) * 2001-06-26 2008-06-03 Kla-Tencor Technologies Corporation Method for determining lithographic focus and exposure
US6773939B1 (en) * 2001-07-02 2004-08-10 Advanced Micro Devices, Inc. Method and apparatus for determining critical dimension variation in a line structure
US6713753B1 (en) * 2001-07-03 2004-03-30 Nanometrics Incorporated Combination of normal and oblique incidence polarimetry for the characterization of gratings
US6704661B1 (en) * 2001-07-16 2004-03-09 Therma-Wave, Inc. Real time analysis of periodic structures on semiconductors
US6678046B2 (en) * 2001-08-28 2004-01-13 Therma-Wave, Inc. Detector configurations for optical metrology
US7127098B2 (en) * 2001-09-13 2006-10-24 Hitachi, Ltd. Image detection method and its apparatus and defect detection method and its apparatus
US7061615B1 (en) 2001-09-20 2006-06-13 Nanometrics Incorporated Spectroscopically measured overlay target
WO2003032085A2 (en) * 2001-10-10 2003-04-17 Accent Optical Technologies, Inc. Determination of center of focus by cross-section analysis
US6898596B2 (en) 2001-10-23 2005-05-24 Therma-Wave, Inc. Evolution of library data sets
JP3839306B2 (ja) * 2001-11-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法および製造システム
US6746566B1 (en) 2001-12-11 2004-06-08 Kla-Tencor Technologies Corporation Transverse magnetic field voltage isolator
US6982791B2 (en) * 2001-12-19 2006-01-03 Therma-Wave, Inc. Scatterometry to simultaneously measure critical dimensions and film properties
AU2002360738A1 (en) * 2001-12-19 2003-07-09 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6884146B2 (en) 2002-02-04 2005-04-26 Kla-Tencor Technologies Corp. Systems and methods for characterizing a polishing process
US6609086B1 (en) * 2002-02-12 2003-08-19 Timbre Technologies, Inc. Profile refinement for integrated circuit metrology
JP3878027B2 (ja) * 2002-02-18 2007-02-07 東京エレクトロン株式会社 偏光解析方法及び光学的膜厚測定装置
US6643008B1 (en) * 2002-02-26 2003-11-04 Advanced Micro Devices, Inc. Method of detecting degradation in photolithography processes based upon scatterometric measurements of grating structures, and a device comprising such structures
US6785009B1 (en) 2002-02-28 2004-08-31 Advanced Micro Devices, Inc. Method of using high yielding spectra scatterometry measurements to control semiconductor manufacturing processes, and systems for accomplishing same
US7136796B2 (en) * 2002-02-28 2006-11-14 Timbre Technologies, Inc. Generation and use of integrated circuit profile-based simulation information
IL148484A (en) * 2002-03-04 2008-11-26 Nova Measuring Instr Ltd Optical measurements of patterned structures
US6791697B1 (en) * 2002-03-21 2004-09-14 Advanced Micro Devices, Inc. Scatterometry structure with embedded ring oscillator, and methods of using same
US6949462B1 (en) 2002-04-04 2005-09-27 Nanometrics Incorporated Measuring an alignment target with multiple polarization states
US6982793B1 (en) 2002-04-04 2006-01-03 Nanometrics Incorporated Method and apparatus for using an alignment target with designed in offset
US7322250B1 (en) * 2002-04-09 2008-01-29 Rockwell Automation Technologies, Inc. System and method for sensing torque on a rotating shaft
TWI273217B (en) * 2002-04-17 2007-02-11 Accent Optical Tech Inc Scatterometric measurement of undercut multi-layer diffracting structures
US6985229B2 (en) * 2002-05-30 2006-01-10 Agere Systems, Inc. Overlay metrology using scatterometry profiling
US7216045B2 (en) * 2002-06-03 2007-05-08 Timbre Technologies, Inc. Selection of wavelengths for integrated circuit optical metrology
US6819844B2 (en) * 2002-06-20 2004-11-16 The Boeing Company Fiber-optic based surface spectroscopy
US6947135B2 (en) * 2002-07-01 2005-09-20 Therma-Wave, Inc. Reduced multicubic database interpolation method for optical measurement of diffractive microstructures
US6919964B2 (en) * 2002-07-09 2005-07-19 Therma-Wave, Inc. CD metrology analysis using a finite difference method
AU2003236819A1 (en) * 2002-07-12 2004-02-02 Luka Optoscope Aps Method and apparatus for optically measuring the topography of nearly planar periodic structures
US7046363B2 (en) * 2002-09-06 2006-05-16 Infineon Technologies Ag Optical measurement system and method
US7869057B2 (en) 2002-09-09 2011-01-11 Zygo Corporation Multiple-angle multiple-wavelength interferometer using high-NA imaging and spectral analysis
US7139081B2 (en) * 2002-09-09 2006-11-21 Zygo Corporation Interferometry method for ellipsometry, reflectometry, and scatterometry measurements, including characterization of thin film structures
US6992764B1 (en) 2002-09-30 2006-01-31 Nanometrics Incorporated Measuring an alignment target with a single polarization state
US7136162B1 (en) * 2002-10-15 2006-11-14 J.A. Woollam Co., Inc. Alignment of ellipsometer beam to sample surface
US20040090629A1 (en) * 2002-11-08 2004-05-13 Emmanuel Drege Diffraction order selection for optical metrology simulation
US7193715B2 (en) * 2002-11-14 2007-03-20 Tokyo Electron Limited Measurement of overlay using diffraction gratings when overlay exceeds the grating period
AU2003302049A1 (en) * 2002-11-20 2004-06-15 Mehrdad Nikoohahad System and method for characterizing three-dimensional structures
US7369233B2 (en) 2002-11-26 2008-05-06 Kla-Tencor Technologies Corporation Optical system for measuring samples using short wavelength radiation
AU2003298003A1 (en) 2002-12-05 2004-06-30 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7440105B2 (en) * 2002-12-05 2008-10-21 Kla-Tencor Technologies Corporation Continuously varying offset mark and methods of determining overlay
FR2849181B1 (fr) * 2002-12-23 2005-12-23 Commissariat Energie Atomique Procede d'etude des reliefs d'une structure par voie optique
US8564780B2 (en) * 2003-01-16 2013-10-22 Jordan Valley Semiconductors Ltd. Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work pieces
US20080246951A1 (en) * 2007-04-09 2008-10-09 Phillip Walsh Method and system for using reflectometry below deep ultra-violet (DUV) wavelengths for measuring properties of diffracting or scattering structures on substrate work-pieces
US7126131B2 (en) * 2003-01-16 2006-10-24 Metrosol, Inc. Broad band referencing reflectometer
US7352453B2 (en) * 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
DE10302868B4 (de) * 2003-01-25 2008-07-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Bestimmung von Strukturparametern einer Oberfläche mit einem lernfähigen System
US7069153B2 (en) * 2003-01-28 2006-06-27 Therma-Wave, Inc. CD metrology method
US7072049B2 (en) * 2003-02-03 2006-07-04 Timbre Technologies, Inc. Model optimization for structures with additional materials
US7106454B2 (en) 2003-03-06 2006-09-12 Zygo Corporation Profiling complex surface structures using scanning interferometry
US7324214B2 (en) 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
US7233390B2 (en) * 2003-03-31 2007-06-19 Therma-Wave, Inc. Scatterometry for samples with non-uniform edges
US7145664B2 (en) * 2003-04-18 2006-12-05 Therma-Wave, Inc. Global shape definition method for scatterometry
US7068363B2 (en) 2003-06-06 2006-06-27 Kla-Tencor Technologies Corp. Systems for inspection of patterned or unpatterned wafers and other specimen
US7463355B1 (en) * 2003-06-12 2008-12-09 Scientific Computing International Nondestructive optical technique for simultaneously measuring optical constants and thickness of thin films
US6891628B2 (en) 2003-06-25 2005-05-10 N & K Technology, Inc. Method and apparatus for examining features on semi-transparent and transparent substrates
US7085676B2 (en) * 2003-06-27 2006-08-01 Tokyo Electron Limited Feed forward critical dimension control
DE10333119B3 (de) * 2003-07-21 2005-05-25 Infineon Technologies Ag Nichtinvasives Verfahren zur Charakterisierung und Identifizierung eingebetteter Mikrostrukturen
US7271921B2 (en) * 2003-07-23 2007-09-18 Kla-Tencor Technologies Corporation Method and apparatus for determining surface layer thickness using continuous multi-wavelength surface scanning
US7430898B1 (en) 2003-09-04 2008-10-07 Kla-Tencor Technologies Corp. Methods and systems for analyzing a specimen using atomic force microscopy profiling in combination with an optical technique
TWI334921B (en) * 2003-09-15 2010-12-21 Zygo Corp Surface profiling using an interference pattern matching template
SE526617C2 (sv) * 2003-10-01 2005-10-18 Sick Ivp Ab System och metod för att avbilda ett objekts egenskaper
US7145654B2 (en) * 2003-10-01 2006-12-05 Tokyo Electron Limited Method and apparatus to reduce spotsize in an optical metrology instrument
JP3892843B2 (ja) * 2003-11-04 2007-03-14 株式会社東芝 寸法測定方法、寸法測定装置および測定マーク
US7256879B2 (en) * 2003-12-11 2007-08-14 Corning Incorporated Semiconductor array tester
US7327457B2 (en) * 2003-12-19 2008-02-05 N&K Technology, Inc. Apparatus and method for optical characterization of a sample over a broadband of wavelengths while minimizing polarization changes
JP2007522432A (ja) * 2003-12-19 2007-08-09 インターナショナル・ビジネス・マシーンズ・コーポレーション 差動限界寸法およびオーバーレイ測定装置および測定方法
US7248364B2 (en) * 2003-12-19 2007-07-24 N&K Technology, Inc. Apparatus and method for optical characterization of a sample over a broadband of wavelengths with a small spot size
JP2010286493A (ja) * 2004-01-23 2010-12-24 Horiba Ltd 基板検査装置
US7355709B1 (en) 2004-02-23 2008-04-08 Kla-Tencor Technologies Corp. Methods and systems for optical and non-optical measurements of a substrate
US7359052B2 (en) 2004-05-14 2008-04-15 Kla-Tencor Technologies Corp. Systems and methods for measurement of a specimen with vacuum ultraviolet light
US7349079B2 (en) 2004-05-14 2008-03-25 Kla-Tencor Technologies Corp. Methods for measurement or analysis of a nitrogen concentration of a specimen
US7067819B2 (en) 2004-05-14 2006-06-27 Kla-Tencor Technologies Corp. Systems and methods for measurement or analysis of a specimen using separated spectral peaks in light
US7564552B2 (en) 2004-05-14 2009-07-21 Kla-Tencor Technologies Corp. Systems and methods for measurement of a specimen with vacuum ultraviolet light
EP1747434B1 (de) * 2004-05-14 2011-07-27 KLA-Tencor Technologies Corporation Systemn zum messen oder analysieren von proben mit vuv-licht
IL162199A (en) * 2004-05-27 2008-04-13 Nova Measuring Instr Ltd Optical measurements of articles with periodic patterns
US7212293B1 (en) 2004-06-01 2007-05-01 N&K Technology, Inc. Optical determination of pattern feature parameters using a scalar model having effective optical properties
US7202958B1 (en) * 2004-06-01 2007-04-10 Nanometrics Incorporated Modeling a sample with an underlying complicated structure
US7804059B2 (en) * 2004-08-11 2010-09-28 Jordan Valley Semiconductors Ltd. Method and apparatus for accurate calibration of VUV reflectometer
US20060043291A1 (en) * 2004-08-26 2006-03-02 Peng Gang G Electron spectroscopic metrology system
US7274440B1 (en) * 2004-09-08 2007-09-25 Kla-Tencor Technologies Corp. Systems and methods for measuring stress in a specimen
US7391524B1 (en) 2004-09-13 2008-06-24 N&K Technology, Inc. System and method for efficient characterization of diffracting structures with incident plane parallel to grating lines
US7206070B2 (en) * 2004-11-15 2007-04-17 Therma-Wave, Inc. Beam profile ellipsometer with rotating compensator
US7483133B2 (en) * 2004-12-09 2009-01-27 Kla-Tencor Technologies Corporation. Multiple angle of incidence spectroscopic scatterometer system
US20070091325A1 (en) * 2005-01-07 2007-04-26 Mehrdad Nikoonahad Multi-channel optical metrology
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
US7884947B2 (en) 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
US7428057B2 (en) 2005-01-20 2008-09-23 Zygo Corporation Interferometer for determining characteristics of an object surface, including processing and calibration
US7408641B1 (en) 2005-02-14 2008-08-05 Kla-Tencor Technologies Corp. Measurement systems configured to perform measurements of a specimen and illumination subsystems configured to provide illumination for a measurement system
US7315384B2 (en) * 2005-05-10 2008-01-01 Asml Netherlands B.V. Inspection apparatus and method of inspection
US7330256B1 (en) 2005-05-16 2008-02-12 N&K Technology, Inc. Spectrophotometric system with reduced angle of incidence
DE102005023736B4 (de) 2005-05-23 2019-08-22 Vistec Semiconductor Systems Jena Gmbh Verfahren zum Bestimmen von Strukturparametern
US7277172B2 (en) * 2005-06-06 2007-10-02 Kla-Tencor Technologies, Corporation Measuring overlay and profile asymmetry using symmetric and anti-symmetric scatterometry signals
US7369235B1 (en) 2005-06-24 2008-05-06 Kla-Tencor Corporation Method and system for measuring deep trenches in silicon
WO2007044786A2 (en) 2005-10-11 2007-04-19 Zygo Corporation Interferometry method and system including spectral decomposition
US7430051B2 (en) * 2005-10-12 2008-09-30 Sematech Inc. Methods for characterizing semiconductor material using optical metrology
JP4807659B2 (ja) * 2006-01-31 2011-11-02 凸版印刷株式会社 セル内膜厚測定装置
US7747424B2 (en) * 2006-03-17 2010-06-29 Kla-Tencor Corporation Scatterometry multi-structure shape definition with multi-periodicity
US7561282B1 (en) 2006-03-27 2009-07-14 Kla-Tencor Technologies Corporation Techniques for determining overlay and critical dimension using a single metrology tool
JP4990548B2 (ja) * 2006-04-07 2012-08-01 株式会社日立製作所 半導体装置の製造方法
US20090306941A1 (en) * 2006-05-15 2009-12-10 Michael Kotelyanskii Structure Model description and use for scatterometry-based semiconductor manufacturing process metrology
US7623238B1 (en) 2006-06-07 2009-11-24 J.A. Woollam Co., Inc. System for and method of reducing change caused by motor vibrations in ellipsometers, polarimeters or the like
US7469164B2 (en) * 2006-06-26 2008-12-23 Nanometrics Incorporated Method and apparatus for process control with in-die metrology
US7515283B2 (en) * 2006-07-11 2009-04-07 Tokyo Electron, Ltd. Parallel profile determination in optical metrology
US7469192B2 (en) * 2006-07-11 2008-12-23 Tokyo Electron Ltd. Parallel profile determination for an optical metrology system
WO2008011510A2 (en) 2006-07-21 2008-01-24 Zygo Corporation Compensation of systematic effects in low coherence interferometry
US8139232B2 (en) 2006-07-27 2012-03-20 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
JP5186129B2 (ja) * 2006-08-25 2013-04-17 大日本スクリーン製造株式会社 溝パターンの深さの測定方法および測定装置
JP5145673B2 (ja) * 2006-08-30 2013-02-20 住友電気工業株式会社 レーザ加工方法およびレーザ加工装置
US7630087B2 (en) * 2006-11-22 2009-12-08 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method
US20080129986A1 (en) * 2006-11-30 2008-06-05 Phillip Walsh Method and apparatus for optically measuring periodic structures using orthogonal azimuthal sample orientations
JP5502491B2 (ja) 2006-12-22 2014-05-28 ザイゴ コーポレーション 表面特徴の特性測定のための装置および方法
DE102006062036B4 (de) * 2006-12-29 2017-10-05 Globalfoundries Inc. Bewertung von mechanischen Spannungen in Mikrostrukturbauelementen in der Prozesslinie
US8798966B1 (en) * 2007-01-03 2014-08-05 Kla-Tencor Corporation Measuring critical dimensions of a semiconductor structure
US7596422B2 (en) * 2007-01-12 2009-09-29 Tokyo Electron Limited Determining one or more profile parameters of a structure using optical metrology and a correlation between profile models and key profile shape variables
US7889355B2 (en) 2007-01-31 2011-02-15 Zygo Corporation Interferometry for lateral metrology
TWI416096B (zh) 2007-07-11 2013-11-21 Nova Measuring Instr Ltd 用於監控圖案化結構的性質之方法及系統
US7716003B1 (en) * 2007-07-16 2010-05-11 Kla-Tencor Technologies Corporation Model-based measurement of semiconductor device features with feed forward use of data for dimensionality reduction
US7619746B2 (en) 2007-07-19 2009-11-17 Zygo Corporation Generating model signals for interferometry
US8699027B2 (en) * 2007-07-27 2014-04-15 Rudolph Technologies, Inc. Multiple measurement techniques including focused beam scatterometry for characterization of samples
US7826072B1 (en) 2007-08-16 2010-11-02 Kla-Tencor Technologies Corporation Method for optimizing the configuration of a scatterometry measurement system
JP4950813B2 (ja) * 2007-08-30 2012-06-13 大日本スクリーン製造株式会社 分光エリプソメータ、膜厚測定装置および分光エリプソメータのフォーカス調整方法
US7838309B1 (en) * 2007-09-07 2010-11-23 Kla-Tencor Corporation Measurement and control of strained devices
NL1036018A1 (nl) * 2007-10-09 2009-04-15 Asml Netherlands Bv A method of optimizing a model, a method of measuring a property, a device manufacturing method, a spectrometer and a lithographic apparatus.
US8072611B2 (en) 2007-10-12 2011-12-06 Zygo Corporation Interferometric analysis of under-resolved features
KR101274517B1 (ko) 2007-11-13 2013-06-13 지고 코포레이션 편광 스캐닝을 이용한 간섭계
US8126677B2 (en) 2007-12-14 2012-02-28 Zygo Corporation Analyzing surface structure using scanning interferometry
DE102007063415B4 (de) * 2007-12-18 2014-12-04 BAM Bundesanstalt für Materialforschung und -prüfung Verfahren und Vorrichtung zum Erkennen eines Erzeugnisses
US9006001B2 (en) * 2007-12-24 2015-04-14 Texas Instruments Incorporated Simple scatterometry structure for Si recess etch control
JP2009162494A (ja) * 2007-12-28 2009-07-23 Nec Electronics Corp 計測方法
US20090219537A1 (en) * 2008-02-28 2009-09-03 Phillip Walsh Method and apparatus for using multiple relative reflectance measurements to determine properties of a sample using vacuum ultra violet wavelengths
US8126694B2 (en) 2008-05-02 2012-02-28 Nanometrics Incorporated Modeling conductive patterns using an effective model
US20090279172A1 (en) * 2008-05-12 2009-11-12 Higashi Robert E Microelectromechanical lamellar grating
US8090558B1 (en) 2008-06-09 2012-01-03 Kla-Tencor Corporation Optical parametric model optimization
US20100059657A1 (en) * 2008-09-05 2010-03-11 Nikon Corporation System and Method Producing Data For Correcting Autofocus Error in An Imaging Optical System
US8004688B2 (en) 2008-11-26 2011-08-23 Zygo Corporation Scan error correction in low coherence scanning interferometry
US8195435B2 (en) * 2008-12-19 2012-06-05 Tokyo Electron Limited Hybrid diffraction modeling of diffracting structures
US8125641B2 (en) * 2009-03-27 2012-02-28 N&K Technology, Inc. Method and apparatus for phase-compensated sensitivity-enhanced spectroscopy (PCSES)
US8153987B2 (en) 2009-05-22 2012-04-10 Jordan Valley Semiconductors Ltd. Automated calibration methodology for VUV metrology system
NL2004545A (en) * 2009-06-09 2010-12-13 Asml Netherlands Bv Lithographic method and arrangement
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
WO2011045132A1 (en) * 2009-10-12 2011-04-21 Asml Netherlands B.V. Method, inspection apparatus and substrate for determining an approximate structure of an object on the substrate
US8467056B1 (en) * 2009-11-09 2013-06-18 The United States Of America As Represented By The Secretary Of The Navy Variable angle, fiber optic coupled, light scattering apparatus
US20110276319A1 (en) * 2010-05-06 2011-11-10 Jonathan Michael Madsen Determination of material optical properties for optical metrology of structures
WO2012018009A1 (ja) * 2010-08-02 2012-02-09 大日本印刷株式会社 光学積層体、偏光板及び画像表示装置
US8867041B2 (en) 2011-01-18 2014-10-21 Jordan Valley Semiconductor Ltd Optical vacuum ultra-violet wavelength nanoimprint metrology
US8565379B2 (en) 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
US9442063B2 (en) * 2011-06-27 2016-09-13 Kla-Tencor Corporation Measurement of composition for thin films
JP2013032981A (ja) * 2011-08-02 2013-02-14 Otsuka Denshi Co Ltd 膜厚測定装置
US8468471B2 (en) 2011-09-23 2013-06-18 Kla-Tencor Corp. Process aware metrology
US10346962B2 (en) * 2012-02-10 2019-07-09 Corning Incorporated Nondestructive method to predict isostatic strength in ceramic substrates
CN105549341A (zh) * 2012-02-21 2016-05-04 Asml荷兰有限公司 检查设备和方法
US9075566B2 (en) 2012-03-02 2015-07-07 Microsoft Technoogy Licensing, LLC Flexible hinge spine
US9460029B2 (en) 2012-03-02 2016-10-04 Microsoft Technology Licensing, Llc Pressure sensitive keys
US20130242303A1 (en) * 2012-03-13 2013-09-19 Nanometrics Incorporated Dual angles of incidence and azimuth angles optical metrology
KR101761735B1 (ko) 2012-03-27 2017-07-26 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템 및 디바이스 제조 방법
US10354929B2 (en) * 2012-05-08 2019-07-16 Kla-Tencor Corporation Measurement recipe optimization based on spectral sensitivity and process variation
US20130300590A1 (en) 2012-05-14 2013-11-14 Paul Henry Dietz Audio Feedback
US9952140B2 (en) * 2012-05-29 2018-04-24 Kla-Tencor Corporation Small spot size spectroscopic ellipsometer
US9182341B2 (en) 2012-06-13 2015-11-10 Kla-Tencor Corporation Optical surface scanning systems and methods
CN103575662B (zh) * 2012-08-09 2016-05-04 北京智朗芯光科技有限公司 光学测量系统
JP2015534056A (ja) 2012-09-24 2015-11-26 トルネード スペクトラル システムズ，インコーポレイテッド 単一検出器アレイを有するオンチップ複数機能分光計
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US8912495B2 (en) 2012-11-21 2014-12-16 Kla-Tencor Corp. Multi-spectral defect inspection for 3D wafers
US8994943B2 (en) * 2012-11-30 2015-03-31 Infineon Technologies Ag Selectivity by polarization
NL2011816A (en) 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
CN103323403B (zh) * 2013-05-27 2015-04-15 浙江大学 一种低辐射镀膜玻璃的光学参数检测方法
US10481088B2 (en) 2013-06-04 2019-11-19 Kla-Tencor Corporation Automatic determination of fourier harmonic order for computation of spectral information for diffraction structures
US10079183B2 (en) * 2013-06-26 2018-09-18 Kla-Tenor Corporation Calculated electrical performance metrics for process monitoring and yield management
WO2015000673A1 (en) * 2013-07-03 2015-01-08 Asml Netherlands B.V. Inspection apparatus and method, lithographic apparatus, lithographic processing cell and device manufacturing method
KR20150085956A (ko) 2014-01-17 2015-07-27 삼성전자주식회사 반도체 소자의 계측 방법, 반도체 계측 시스템, 및 이들을 이용한 반도체 소자의 제조방법
US9546962B2 (en) * 2014-02-12 2017-01-17 Kla-Tencor Corporation Multi-spot scanning collection optics
JP6267550B2 (ja) * 2014-03-12 2018-01-24 キヤノン株式会社 測定装置および測定方法
KR102609862B1 (ko) 2014-04-17 2023-12-04 펨토매트릭스, 인코포레이티드. 웨이퍼 계측 기술들
US9494535B2 (en) 2014-04-21 2016-11-15 Kla-Tencor Corporation Scatterometry-based imaging and critical dimension metrology
JP6035279B2 (ja) 2014-05-08 2016-11-30 東京エレクトロン株式会社 膜厚測定装置、膜厚測定方法、プログラム及びコンピュータ記憶媒体
CN106662823B (zh) 2014-06-30 2018-10-19 Asml荷兰有限公司 确定剂量的方法、检查设备、图案形成装置、衬底以及器件制造方法
US10151986B2 (en) * 2014-07-07 2018-12-11 Kla-Tencor Corporation Signal response metrology based on measurements of proxy structures
US9304235B2 (en) 2014-07-30 2016-04-05 Microsoft Technology Licensing, Llc Microfabrication
US10324733B2 (en) 2014-07-30 2019-06-18 Microsoft Technology Licensing, Llc Shutdown notifications
US9787576B2 (en) 2014-07-31 2017-10-10 Microsoft Technology Licensing, Llc Propagating routing awareness for autonomous networks
US10592080B2 (en) 2014-07-31 2020-03-17 Microsoft Technology Licensing, Llc Assisted presentation of application windows
US10254942B2 (en) 2014-07-31 2019-04-09 Microsoft Technology Licensing, Llc Adaptive sizing and positioning of application windows
US10678412B2 (en) 2014-07-31 2020-06-09 Microsoft Technology Licensing, Llc Dynamic joint dividers for application windows
KR102544026B1 (ko) * 2014-11-12 2023-06-14 펨토매트릭스, 인코포레이티드. 제2고조파 발생(ｓｈｇ) 신호 내에서 재료 특성을 해석하는 시스템
US10151634B2 (en) 2014-11-16 2018-12-11 Ibrahim Abdulhalim Multi-spectral polarimetric variable optical device and imager
KR20160066448A (ko) 2014-12-02 2016-06-10 삼성전자주식회사 표면 검사 방법
US9372347B1 (en) 2015-02-09 2016-06-21 Microsoft Technology Licensing, Llc Display system
US9535253B2 (en) 2015-02-09 2017-01-03 Microsoft Technology Licensing, Llc Display system
US9429692B1 (en) 2015-02-09 2016-08-30 Microsoft Technology Licensing, Llc Optical components
US9513480B2 (en) 2015-02-09 2016-12-06 Microsoft Technology Licensing, Llc Waveguide
US9827209B2 (en) 2015-02-09 2017-11-28 Microsoft Technology Licensing, Llc Display system
US9423360B1 (en) 2015-02-09 2016-08-23 Microsoft Technology Licensing, Llc Optical components
US10018844B2 (en) 2015-02-09 2018-07-10 Microsoft Technology Licensing, Llc Wearable image display system
US11086216B2 (en) 2015-02-09 2021-08-10 Microsoft Technology Licensing, Llc Generating electronic components
US10317677B2 (en) 2015-02-09 2019-06-11 Microsoft Technology Licensing, Llc Display system
US9970863B2 (en) * 2015-02-22 2018-05-15 Kla-Tencor Corporation Optical metrology with reduced focus error sensitivity
US10094774B2 (en) * 2015-08-12 2018-10-09 Industrial Technology Research Institute Scattering measurement system and method
US20170045355A1 (en) * 2015-08-12 2017-02-16 Industrial Technology Research Institute Scattering measurement system and method
KR102533125B1 (ko) 2015-09-03 2023-05-15 캘리포니아 인스티튜트 오브 테크놀로지 높은-ｋ 유전체를 특징화하는 시스템 및 방법
CN105277500B (zh) * 2015-12-08 2018-05-25 上海老盛昌配送有限公司 一种苏丹红紫外固化检测装置与方法
US10451412B2 (en) 2016-04-22 2019-10-22 Kla-Tencor Corporation Apparatus and methods for detecting overlay errors using scatterometry
US9728470B1 (en) * 2016-05-10 2017-08-08 Infineon Technologies Austria Ag Semiconductor structure and methods
KR20180028787A (ko) * 2016-09-09 2018-03-19 삼성전자주식회사 디펙 검사 시스템과 방법, 및 그 검사 방법을 이용한 반도체 소자 제조방법
TWI716684B (zh) * 2018-05-09 2021-01-21 華邦電子股份有限公司 臨界尺寸量測方法及用於量測臨界尺寸的影像處理裝置
JP2021530670A (ja) 2018-05-15 2021-11-11 フェムトメトリクス， インク． 第二高調波発生（ｓｈｇ）光学的検査システムの設計
WO2020021554A1 (en) * 2018-07-25 2020-01-30 Nova Measuring Instruments Ltd. Optical technique for material characterization
CN108965735B (zh) * 2018-09-27 2023-11-03 武汉华星光电技术有限公司 对焦补偿的方法及其设备
KR102139995B1 (ko) * 2018-10-24 2020-07-31 한국표준과학연구원 수직입사 및 경사입사 결합형 타원계측기 및 이를 이용한 시편의 광물성 측정 방법
CN109405815B (zh) * 2018-12-05 2024-03-19 长安大学 一种用于隧道内测量周边收敛的快速固定装置及方法
US10804167B2 (en) 2019-01-24 2020-10-13 Kla-Tencor Corporation Methods and systems for co-located metrology
US11060982B2 (en) * 2019-03-17 2021-07-13 Kla Corporation Multi-dimensional model of optical dispersion
US10921721B1 (en) * 2019-09-13 2021-02-16 Applied Materials, Inc. Measurement system and grating pattern array
KR20210032663A (ko) 2019-09-17 2021-03-25 삼성전자주식회사 웨이퍼 검사 장치
JP7083856B2 (ja) * 2020-01-07 2022-06-13 日本電子株式会社 高さ測定装置、荷電粒子線装置、および高さ測定方法
US11939665B2 (en) * 2020-03-10 2024-03-26 Tokyo Electron Limted Film thickness measuring apparatus and film thickness measuring method, and film forming system and film forming method
US20220290974A1 (en) * 2021-03-11 2022-09-15 Applied Materials Israel Ltd. Optical metrology models for in-line film thickness measurements
CN113310907B (zh) * 2021-06-09 2022-07-05 华中科技大学 一种磁性椭偏测量装置
EP4202409A1 (de) * 2021-12-22 2023-06-28 Munster Technological University Auf resonanter streuungsspektroskopie-basierte prüfung im wafer-massstab

Family Cites Families (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3426201A (en) * 1965-10-12 1969-02-04 Texas Instruments Inc Method and apparatus for measuring the thickness of films by means of elliptical polarization of reflected infrared radiation
US3547074A (en) 1967-04-13 1970-12-15 Block Engineering Apparatus for forming microelements
US3667846A (en) * 1969-07-28 1972-06-06 Charles Nater Optical surface inspection apparatus
US3671126A (en) * 1970-02-19 1972-06-20 Ati Inc Noncontacting optical probe
US4171917A (en) 1974-07-02 1979-10-23 Centre De Recherches Metallurgiques-Centrum Voor Research In De Metallurgie Determining the profile of a surface of an object
US4039370A (en) 1975-06-23 1977-08-02 Rca Corporation Optically monitoring the undercutting of a layer being etched
CA1043463A (en) * 1975-12-05 1978-11-28 Paul A. Mueller Lumber inspection and optimization system
JPS5335567A (en) 1976-09-13 1978-04-03 Shinetsu Chem Ind Co Apparatus for measuring thickness of semiconductor wafer
US4173788A (en) 1976-09-27 1979-11-06 Atmospheric Sciences, Inc. Method and apparatus for measuring dimensions
US4146327A (en) * 1976-12-27 1979-03-27 Autech Optical triangulation gauging system
US4141780A (en) 1977-12-19 1979-02-27 Rca Corporation Optically monitoring the thickness of a depositing layer
US4303341A (en) 1977-12-19 1981-12-01 Rca Corporation Optically testing the lateral dimensions of a pattern
US4200396A (en) 1977-12-19 1980-04-29 Rca Corporation Optically testing the lateral dimensions of a pattern
US5164579A (en) 1979-04-30 1992-11-17 Diffracto Ltd. Method and apparatus for electro-optically determining the dimension, location and attitude of objects including light spot centroid determination
US5280179A (en) * 1979-04-30 1994-01-18 Sensor Adaptive Machines Incorporated Method and apparatus utilizing an orientation code for automatically guiding a robot
US4373804A (en) * 1979-04-30 1983-02-15 Diffracto Ltd. Method and apparatus for electro-optically determining the dimension, location and attitude of objects
HU186726B (en) 1979-06-08 1985-09-30 Energiagazdalkodasi Intezet Hybrid heat pump
US4330213A (en) 1980-02-14 1982-05-18 Rca Corporation Optical line width measuring apparatus and method
US5112131A (en) 1981-02-27 1992-05-12 Diffracto, Ltd. Controlled machining of combustion chambers, gears and other surfaces
EP0061237B1 (de) 1981-03-16 1986-04-16 Energy Conversion Devices, Inc. Optisches Verfahren zur Kontrolle der Schichtdicke
US4516855A (en) * 1981-04-03 1985-05-14 International Business Machines Corporation Method and apparatus for determining the polarization state of a light wave field
JPS57187604A (en) 1981-05-14 1982-11-18 Toshiba Corp Measurement device of profile
US4408884A (en) 1981-06-29 1983-10-11 Rca Corporation Optical measurements of fine line parameters in integrated circuit processes
JPS58206120A (ja) 1982-05-26 1983-12-01 Hitachi Ltd 半導体形成プロセス制御方式
JPS5999304A (ja) * 1982-11-30 1984-06-08 Asahi Optical Co Ltd 顕微鏡系のレーザ光による比較測長装置
JPS59140420A (ja) * 1983-02-01 1984-08-11 Canon Inc 半導体レ−ザ−を用いた光源装置
SU1146549A1 (ru) 1983-04-08 1985-03-23 Предприятие П/Я В-2892 Способ измерени линейного размера элементов топологического рисунка микросхем
JPH0750664B2 (ja) * 1983-06-23 1995-05-31 富士通株式会社 レチクルの検査方法
JPS6033003A (ja) 1983-08-03 1985-02-20 Hitachi Ltd 形状測定装置
JPS6074528A (ja) 1983-09-30 1985-04-26 Fujitsu Ltd レジストパタ−ン検査装置
JPS6086843A (ja) 1983-10-19 1985-05-16 Hitachi Ltd 偏光解析装置を有する加工装置
JPS60128602A (ja) 1983-12-16 1985-07-09 株式会社日立製作所 多連多回転ボリウム
US4615620A (en) 1983-12-26 1986-10-07 Hitachi, Ltd. Apparatus for measuring the depth of fine engraved patterns
USRE33424E (en) 1983-12-26 1990-11-06 Hitachi, Ltd. Apparatus and method for measuring the depth of fine engraved patterns
US4672196A (en) 1984-02-02 1987-06-09 Canino Lawrence S Method and apparatus for measuring properties of thin materials using polarized light
JPS60166808A (ja) 1984-02-10 1985-08-30 Toshiba Corp 形状測定装置
JPS60236005A (ja) 1984-05-09 1985-11-22 Nec Corp 線巾測定方法
US4695162A (en) 1984-05-24 1987-09-22 Victor Company Of Japan, Ltd. Film thickness measuring apparatus
US4653924A (en) * 1984-06-12 1987-03-31 Victor Company Of Japan, Ltd. Rotating analyzer type ellipsometer
JPS614905A (ja) 1984-06-19 1986-01-10 Nec Corp 線幅測定方法
JPS614906A (ja) 1984-06-19 1986-01-10 Nec Corp 線幅測定方法
JPS6139852A (ja) 1984-07-31 1986-02-26 Toshiba Electric Equip Corp 位相制御回路の保護回路
SU1226042A1 (ru) 1984-08-18 1986-04-23 Предприятие П/Я В-2892 Способ измерени толщины пленок на подложках
DE3434575C1 (de) * 1984-09-20 1986-03-13 Sagax Instrument AB, Sundbyberg Ellipsometrische Vorrichtung zur Untersuchung der physikalischen Eigenschaften der Oberflaeche einer Probe
US4687325A (en) * 1985-03-28 1987-08-18 General Electric Company Three-dimensional range camera
US4689491A (en) * 1985-04-19 1987-08-25 Datasonics Corp. Semiconductor wafer scanning system
US4710642A (en) 1985-08-20 1987-12-01 Mcneil John R Optical scatterometer having improved sensitivity and bandwidth
US4668860A (en) 1985-10-09 1987-05-26 Optical Coating Laboratory, Inc. Scattermeter using polarized light to distinguish between bulk and surface scatter
JPS62150251A (ja) 1985-12-24 1987-07-04 Nec Corp デ−タベ−ス型フオトマスク検査装置
US5329357A (en) 1986-03-06 1994-07-12 Sopra-Societe De Production Et De Recherches Appliquees Spectroscopic ellipsometry apparatus including an optical fiber
FR2597976B1 (fr) 1986-04-24 1990-11-09 Tissier Annie Procede de mesure de parametres caracteristiques d'une couche mince et appareil pour la mise en oeuvre de ce procede
FR2605100B1 (fr) 1986-10-10 1988-12-09 Labo Electronique Physique Dispositif optique d'eclairement d'un echantillon pour un ellipsometre spectroscopique a haute resolution laterale
JPH0769154B2 (ja) 1987-06-10 1995-07-26 富士写真フイルム株式会社 レジストパタ−ンの形状計測方法
JPS6428509A (en) 1987-07-23 1989-01-31 Nippon Kokan Kk Apparatus for measuring thickness of film
US4905170A (en) 1987-11-12 1990-02-27 Forouhi Abdul R Method and apparatus of determining optical constants of amorphous semiconductors and dielectrics
US5087121A (en) * 1987-12-01 1992-02-11 Canon Kabushiki Kaisha Depth/height measuring device
JPH0663745B2 (ja) 1988-01-13 1994-08-22 日本電気株式会社 格子周期測定装置
FR2628211B1 (fr) * 1988-03-04 1993-05-14 Vareille Aime Analyseur par ellipsometrie, procede d'analyse ellipsometrique d'un echantillon et application a la mesure de variation d'epaisseur des couches minces
US5007708A (en) * 1988-07-26 1991-04-16 Georgia Tech Research Corporation Technique for producing antireflection grating surfaces on dielectrics, semiconductors and metals
US5393624A (en) * 1988-07-29 1995-02-28 Tokyo Electron Limited Method and apparatus for manufacturing a semiconductor device
SU1695145A1 (ru) 1988-08-03 1991-11-30 Институт Радиотехники И Электроники Ан Ссср Эллипсометр
US4964726A (en) 1988-09-27 1990-10-23 General Electric Company Apparatus and method for optical dimension measurement using interference of scattered electromagnetic energy
NL8802920A (nl) 1988-11-28 1990-06-18 Hoogovens Groep Bv Laagdiktemeter.
US4991971A (en) 1989-02-13 1991-02-12 United Technologies Corporation Fiber optic scatterometer for measuring optical surface roughness
US5076696A (en) 1989-03-16 1991-12-31 The Johns Hopkins University Dynamic imaging microellipsometry
DE3914631A1 (de) 1989-05-03 1990-11-08 Basf Ag Verfahren zur untersuchung der physikalischen eigenschaften duenner schichten
US4999014A (en) 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
US5042951A (en) 1989-09-19 1991-08-27 Therma-Wave, Inc. High resolution ellipsometric apparatus
DD289541A5 (de) 1989-08-04 1991-05-02 ��@�K@�������������@�K@��������������@��������k�� Verfahren zur herstellung von 11beta-aryl-16 alpha, 17 alph-cyclohexanoestra-4,9-dienen
JP3187827B2 (ja) 1989-12-20 2001-07-16 株式会社日立製作所 パターン検査方法および装置
US5166752A (en) 1990-01-11 1992-11-24 Rudolph Research Corporation Simultaneous multiple angle/multiple wavelength ellipsometer and method
DE4105192C2 (de) 1990-02-26 1996-07-04 Stefan Oelckers Verfahren zum Bestimmen von Oberflächenrauhigkeiten und dergleichen
JPH0424541A (ja) 1990-05-21 1992-01-28 Mitsui Mining & Smelting Co Ltd 内部欠陥測定方法および装置
US5091320A (en) * 1990-06-15 1992-02-25 Bell Communications Research, Inc. Ellipsometric control of material growth
US5241369A (en) 1990-10-01 1993-08-31 Mcneil John R Two-dimensional optical scatterometer apparatus and process
US5114233A (en) 1990-10-09 1992-05-19 At&T Bell Laboratories Method for inspecting etched workpieces
US5032734A (en) 1990-10-15 1991-07-16 Vti, Inc. Method and apparatus for nondestructively measuring micro defects in materials
JP2927934B2 (ja) 1990-11-16 1999-07-28 株式会社リコー 薄膜測定方法および装置
US5411760A (en) * 1990-11-16 1995-05-02 Cal-West Equipment Company, Inc. Protective coating and method of using such coating
IL96483A (en) 1990-11-27 1995-07-31 Orbotech Ltd Optical inspection method and apparatus
EP0527230B1 (de) * 1991-01-30 1996-06-05 Nkk Corporation Ellipsometer
US5164790A (en) 1991-02-27 1992-11-17 Mcneil John R Simple CD measurement of periodic structures on photomasks
US5674652A (en) 1991-02-28 1997-10-07 University Of New Mexico Diffracted light from latent images in photoresist for exposure control
DE4108329C2 (de) 1991-03-14 1993-10-14 Plasmos Gmbh Prozesstechnik Verfahren zum Bestimmen von Materialparametern, nämlich Dicke, Brechungsindex und Absorptionskoeffizient, einzelner Schichten
JP3323537B2 (ja) 1991-07-09 2002-09-09 キヤノン株式会社 微細構造評価装置及び微細構造評価法
US5337146A (en) * 1992-03-30 1994-08-09 University Of New Orleans Diffraction-grating photopolarimeters and spectrophotopolarimeters
US5486919A (en) * 1992-04-27 1996-01-23 Canon Kabushiki Kaisha Inspection method and apparatus for inspecting a particle, if any, on a substrate having a pattern
US5313044A (en) * 1992-04-28 1994-05-17 Duke University Method and apparatus for real-time wafer temperature and thin film growth measurement and control in a lamp-heated rapid thermal processor
US5386317A (en) * 1992-05-13 1995-01-31 Prometrix Corporation Method and apparatus for imaging dense linewidth features using an optical microscope
US5747813A (en) * 1992-06-16 1998-05-05 Kla-Tencop. Corporation Broadband microspectro-reflectometer
US5494829A (en) 1992-07-31 1996-02-27 Biostar, Inc. Devices and methods for detection of an analyte based upon light interference
US5337150A (en) * 1992-08-04 1994-08-09 Hughes Aircraft Company Apparatus and method for performing thin film layer thickness metrology using a correlation reflectometer
US5361137A (en) 1992-08-31 1994-11-01 Texas Instruments Incorporated Process control for submicron linewidth measurement
US5666201A (en) 1992-09-18 1997-09-09 J.A. Woollam Co. Inc. Multiple order dispersive optics system and method of use
US5521706A (en) 1992-09-18 1996-05-28 J. A. Woollam Co. Inc. System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system
US5504582A (en) 1992-09-18 1996-04-02 J. A. Woollam Co. Inc. System and method for compensating polarization-dependent sensitivity of dispersive optics in a rotating analyzer ellipsometer system
US5519793A (en) * 1992-11-05 1996-05-21 The United States Of America As Represented By The Secretary Of The Interior Apparatus and method for computer vision measurements
US5365340A (en) 1992-12-10 1994-11-15 Hughes Aircraft Company Apparatus and method for measuring the thickness of thin films
DE4301889A1 (de) 1993-01-14 1994-07-21 Sentech Instr Gmbh Verfahren zum Bestimmen charakteristischer Größen transparenter Schichten mit Hilfe der Ellipsometrie
IL104708A (en) 1993-02-12 1995-12-31 Orbotech Ltd Device and method for optical inspection of items
US5432607A (en) * 1993-02-22 1995-07-11 International Business Machines Corporation Method and apparatus for inspecting patterned thin films using diffracted beam ellipsometry
US5381233A (en) 1993-03-03 1995-01-10 National Tsing Hua University Polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate
DE69421844T2 (de) 1993-04-23 2000-06-29 Japan Res Dev Corp Verfahren zur Kontrolle der Schichtdicke und/oder des Brechungsindexes
US5408322A (en) * 1993-04-26 1995-04-18 Materials Research Corporation Self aligning in-situ ellipsometer and method of using for process monitoring
US5399229A (en) * 1993-05-13 1995-03-21 Texas Instruments Incorporated System and method for monitoring and evaluating semiconductor wafer fabrication
US5412473A (en) 1993-07-16 1995-05-02 Therma-Wave, Inc. Multiple angle spectroscopic analyzer utilizing interferometric and ellipsometric devices
US5355212A (en) 1993-07-19 1994-10-11 Tencor Instruments Process for inspecting patterned wafers
US5416594A (en) 1993-07-20 1995-05-16 Tencor Instruments Surface scanner with thin film gauge
US5363171A (en) 1993-07-29 1994-11-08 The United States Of America As Represented By The Director, National Security Agency Photolithography exposure tool and method for in situ photoresist measurments and exposure control
US5503707A (en) 1993-09-22 1996-04-02 Texas Instruments Incorporated Method and apparatus for process endpoint prediction based on actual thickness measurements
US5625453A (en) * 1993-10-26 1997-04-29 Canon Kabushiki Kaisha System and method for detecting the relative positional deviation between diffraction gratings and for measuring the width of a line constituting a diffraction grating
IL107549A (en) * 1993-11-09 1996-01-31 Nova Measuring Instr Ltd Device for measuring the thickness of thin films
US5494697A (en) 1993-11-15 1996-02-27 At&T Corp. Process for fabricating a device using an ellipsometric technique
US5555472A (en) 1993-12-22 1996-09-10 Integrated Process Equipment Corp. Method and apparatus for measuring film thickness in multilayer thin film stack by comparison to a reference library of theoretical signatures
GB9326247D0 (en) 1993-12-23 1994-02-23 British Petroleum Co Plc Method of determining thickness of coating
JPH07181438A (ja) * 1993-12-24 1995-07-21 Sharp Corp 液晶表示装置及びその欠陥修正方法
US5666199A (en) * 1994-07-11 1997-09-09 Phillips Petroleum Company Apparatus and process for detecting the presence of gel defects in oriented sheets or films based on polarization detection
US5774222A (en) * 1994-10-07 1998-06-30 Hitachi, Ltd. Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected
US5604581A (en) 1994-10-07 1997-02-18 On-Line Technologies, Inc. Film thickness and free carrier concentration analysis method and apparatus
EP0787286A1 (de) 1994-10-21 1997-08-06 Therma-Wave Inc. Spektralellipsometer
US5555474A (en) * 1994-12-21 1996-09-10 Integrated Process Equipment Corp. Automatic rejection of diffraction effects in thin film metrology
US5608526A (en) 1995-01-19 1997-03-04 Tencor Instruments Focused beam spectroscopic ellipsometry method and system
US5607800A (en) * 1995-02-15 1997-03-04 Lucent Technologies Inc. Method and arrangement for characterizing micro-size patterns
FR2731074B1 (fr) 1995-02-27 1997-05-16 Instruments Sa Procede de mesure ellipsometrique, ellipsometre et dispositif de controle d'elaboration de couches les mettant en oeuvre
US6118525A (en) 1995-03-06 2000-09-12 Ade Optical Systems Corporation Wafer inspection system for distinguishing pits and particles
JPH10501072A (ja) * 1995-03-20 1998-01-27 カンサス ステイト ユニバーシティ リサーチ フアウンデーション エリプソメトリー顕微鏡
US5777744A (en) * 1995-05-16 1998-07-07 Canon Kabushiki Kaisha Exposure state detecting system and exposure apparatus using the same
US5625455A (en) 1995-06-06 1997-04-29 Board Of Regents, The University Of Texas System Rotating analyzer ellipsometer and ellipsometry technique
US5703692A (en) 1995-08-03 1997-12-30 Bio-Rad Laboratories, Inc. Lens scatterometer system employing source light beam scanning means
FR2737572B1 (fr) * 1995-08-03 1997-10-24 Centre Nat Rech Scient Ellipsometre multi-detecteurs et procede de mesure ellipsometrique multi-detecteurs
US5638178A (en) 1995-09-01 1997-06-10 Phase Metrics Imaging polarimeter detector for measurement of small spacings
US5739909A (en) 1995-10-10 1998-04-14 Lucent Technologies Inc. Measurement and control of linewidths in periodic structures using spectroscopic ellipsometry
US5835221A (en) * 1995-10-16 1998-11-10 Lucent Technologies Inc. Process for fabricating a device using polarized light to determine film thickness
US5835220A (en) 1995-10-27 1998-11-10 Nkk Corporation Method and apparatus for detecting surface flaws
US5654903A (en) * 1995-11-07 1997-08-05 Lucent Technologies Inc. Method and apparatus for real time monitoring of wafer attributes in a plasma etch process
US6104486A (en) * 1995-12-28 2000-08-15 Fujitsu Limited Fabrication process of a semiconductor device using ellipsometry
JP3712481B2 (ja) * 1995-12-28 2005-11-02 富士通株式会社 半導体装置の製造方法
US5825498A (en) 1996-02-05 1998-10-20 Micron Technology, Inc. Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials
US5982496A (en) 1996-03-11 1999-11-09 Vlsi Technology, Inc. Thin film thickness and optimal focus measuring using reflectivity
US5805290A (en) 1996-05-02 1998-09-08 International Business Machines Corporation Method of optical metrology of unresolved pattern arrays
JP3602646B2 (ja) 1996-05-21 2004-12-15 株式会社日立製作所 試料の寸法測定装置
US5880838A (en) * 1996-06-05 1999-03-09 California Institute Of California System and method for optically measuring a structure
US6594012B2 (en) * 1996-07-05 2003-07-15 Canon Kabushiki Kaisha Exposure apparatus
US5923423A (en) 1996-09-12 1999-07-13 Sentec Corporation Heterodyne scatterometer for detecting and analyzing wafer surface defects
US5956148A (en) * 1996-12-20 1999-09-21 Texas Instruments Incorporated Semiconductor surface measurement system and method
US5867276A (en) 1997-03-07 1999-02-02 Bio-Rad Laboratories, Inc. Method for broad wavelength scatterometry
US6278519B1 (en) * 1998-01-29 2001-08-21 Therma-Wave, Inc. Apparatus for analyzing multi-layer thin film stacks on semiconductors
US6031615A (en) * 1997-09-22 2000-02-29 Candela Instruments System and method for simultaneously measuring lubricant thickness and degradation, thin film thickness and wear, and surface roughness
US5963329A (en) 1997-10-31 1999-10-05 International Business Machines Corporation Method and apparatus for measuring the profile of small repeating lines
US6483580B1 (en) * 1998-03-06 2002-11-19 Kla-Tencor Technologies Corporation Spectroscopic scatterometer system
US6836324B2 (en) 1998-03-18 2004-12-28 Nova Measuring Instruments Ltd. Method and apparatus for measurements of patterned structures
US6476920B1 (en) 1998-03-18 2002-11-05 Nova Measuring Instruments, Ltd. Method and apparatus for measurements of patterned structures
IL123727A (en) 1998-03-18 2002-05-23 Nova Measuring Instr Ltd Method and apparatus for measurement of patterned structures
US5917594A (en) 1998-04-08 1999-06-29 Kla-Tencor Corporation Spectroscopic measurement system using an off-axis spherical mirror and refractive elements
US6271047B1 (en) 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
IL143478A (en) * 1998-12-04 2005-09-25 Fraunhofer Ges Forschung Method and device for optically monitoring processes for manufacturing microstructured surfaces in the production of semiconductors
IL130874A (en) 1999-07-09 2002-12-01 Nova Measuring Instr Ltd System and method for measuring pattern structures
US6525818B1 (en) 2000-02-08 2003-02-25 Infineon Technologies Ag Overlay alignment system using polarization schemes
US6982792B1 (en) * 2000-03-21 2006-01-03 J.A. Woollam Co. Inc Spectrophotometer, ellipsometer, polarimeter and the like systems
US6429943B1 (en) 2000-03-29 2002-08-06 Therma-Wave, Inc. Critical dimension analysis with simultaneous multiple angle of incidence measurements
US6603542B1 (en) 2000-06-14 2003-08-05 Qc Optics, Inc. High sensitivity optical inspection system and method for detecting flaws on a diffractive surface
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US6728663B2 (en) * 2000-09-13 2004-04-27 Accent Optical Technologies, Inc. Structure identification using scattering signatures
US7099005B1 (en) 2000-09-27 2006-08-29 Kla-Tencor Technologies Corporation System for scatterometric measurements and applications
US6678043B1 (en) * 2000-10-31 2004-01-13 Gerard H. Vurens Methods and apparatus for surface analysis
US6900892B2 (en) * 2000-12-19 2005-05-31 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
US6819426B2 (en) 2001-02-12 2004-11-16 Therma-Wave, Inc. Overlay alignment metrology using diffraction gratings
US6614540B1 (en) 2001-06-28 2003-09-02 Advanced Micro Devices, Inc. Method and apparatus for determining feature characteristics using scatterometry
AU2002360738A1 (en) * 2001-12-19 2003-07-09 Kla-Tencor Technologies Corporation Parametric profiling using optical spectroscopic systems
KR100689743B1 (ko) 2004-10-01 2007-03-08 삼성전자주식회사 저잡음 증폭기의 정전기 보호 및 입력 임피던스 정합 회로및 저잡음 증폭기
US7515253B2 (en) * 2005-01-12 2009-04-07 Kla-Tencor Technologies Corporation System for measuring a sample with a layer containing a periodic diffracting structure
US7372579B2 (en) * 2006-04-20 2008-05-13 Infineon Technologies, Ag Apparatus and method for monitoring trench profiles and for spectrometrologic analysis

Also Published As

Publication number Publication date
US20070091327A1 (en) 2007-04-26
EP1073876A1 (de) 2001-02-07
US20100165340A1 (en) 2010-07-01
JP2002506198A (ja) 2002-02-26
EP1508772A1 (de) 2005-02-23
JP5102329B2 (ja) 2012-12-19
US6483580B1 (en) 2002-11-19
JP4643737B2 (ja) 2011-03-02
JP5249169B2 (ja) 2013-07-31
JP2013083659A (ja) 2013-05-09
US7898661B2 (en) 2011-03-01
WO1999045340A1 (en) 1999-09-10
JP2010133942A (ja) 2010-06-17
US20030058443A1 (en) 2003-03-27
US6590656B2 (en) 2003-07-08
US7859659B2 (en) 2010-12-28
US7173699B2 (en) 2007-02-06
AU3310999A (en) 1999-09-20
EP1073876B1 (de) 2004-12-29
JP2010066268A (ja) 2010-03-25
JP2010133941A (ja) 2010-06-17
JP5563803B2 (ja) 2014-07-30
US20020033945A1 (en) 2002-03-21
JP4633254B2 (ja) 2011-02-16
DE69922942T2 (de) 2006-03-30
JP2010281822A (ja) 2010-12-16
US20110125458A1 (en) 2011-05-26
EP1508772B1 (de) 2013-08-21

Similar Documents

Publication Publication Date Title
DE69922942D1 (de) Messung einer difraktionsstruktur, breitbandig, polarisierend und ellipsometrisch und eine unterliegende struktur
JP2002506198A5 (ja) 回折構造体、広帯域、偏光、エリプソメトリおよび下地構造体の測定
DE60134812D1 (de) Verteiltes Echtzeit-Test- und Messinstrument
GB2359893B (en) A moisture meter with impedence and relative humidity measurements
NO983502D0 (no) FremgangsmÕte for mÕling av br°nn- og formasjonsegenskaper
NO994831D0 (no) Innretning for maaling av duggpunkt og kokepunkt
DE69916716D1 (de) Polarimeter und zugehöriges messverfahren
DE59912617D1 (de) Rotatorische Positionsmesseinrichtung
DE69932981D1 (de) Breitband-Signalanalysator
DE50107717D1 (de) Verrigelungs- und Betätigungseinheit für seitliche Auslegerverriegelung
NO20024810D0 (no) Dermatologisk preparat samt anvendelse derav
DE50208548D1 (de) Kleinbauender kupplungsstecker, insbesondere für eine planare breitband-lambda-sonde mit verlierschutz für einzeladerdichtungen
DE60123996D1 (de) Messung von oberflächendefekten
DE59811015D1 (de) Ellipsometer-messvorrichtung
DE69726055D1 (de) Längen- oder Winkelmessinstrument
FI982682A (fi) Uusi komposiitti ja sen käyttö
DE59912817D1 (de) Profilschiene und Verbindungselement für eine Tragvorrichtung
DE29805821U1 (de) Verriegelungsvorrichtung für eine Tür
FI991548A (fi) Menetelmä rainan sakeuden mittaamiseksi ja mittalaite
DE59401352D1 (de) Längen- oder Winkelmesseinrichtung
DE59909251D1 (de) Haarlängenmessgerät
DE29815436U1 (de) Meßschieber
DE50007208D1 (de) Eine verriegelungsvorrichtung
DE50205747D1 (de) Messvorrichtung zur Messung der Gewebespannung in einer Webmaschine und Webmaschine mit einer derartigen Messvorrichtung
DE10084211D2 (de) Sensor zum Messen einer Stoffkonzentration und Messanordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition