DE69928289D1 - Ätzkammern mit plasma höher dichte und geringer kontamination und herstellungs- verfahren der selben - Google Patents

Ätzkammern mit plasma höher dichte und geringer kontamination und herstellungs- verfahren der selben

Info

Publication number
DE69928289D1
DE69928289D1 DE69928289T DE69928289T DE69928289D1 DE 69928289 D1 DE69928289 D1 DE 69928289D1 DE 69928289 T DE69928289 T DE 69928289T DE 69928289 T DE69928289 T DE 69928289T DE 69928289 D1 DE69928289 D1 DE 69928289D1
Authority
DE
Germany
Prior art keywords
chambers
same
manufacturing process
higher density
low contamination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69928289T
Other languages
English (en)
Other versions
DE69928289T2 (de
Inventor
E Wicker
A Maraschin
S Kennedy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE69928289D1 publication Critical patent/DE69928289D1/de
Application granted granted Critical
Publication of DE69928289T2 publication Critical patent/DE69928289T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/914—Differential etching apparatus including particular materials of construction
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/916—Differential etching apparatus including chamber cleaning means or shield for preventing deposits
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12347—Plural layers discontinuously bonded [e.g., spot-weld, mechanical fastener, etc.]

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Electron Sources, Ion Sources (AREA)
DE69928289T 1998-09-25 1999-09-24 Ätzkammern mit plasma dichte und geringer kontamination und herstellungsverfahren derselben Expired - Lifetime DE69928289T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/161,074 US6129808A (en) 1998-03-31 1998-09-25 Low contamination high density plasma etch chambers and methods for making the same
US161074 1998-09-25
PCT/US1999/020890 WO2000019481A2 (en) 1998-09-25 1999-09-24 Low contamination high density plasma processing chamber and methods for processing a semiconductor substrate

Publications (2)

Publication Number Publication Date
DE69928289D1 true DE69928289D1 (de) 2005-12-15
DE69928289T2 DE69928289T2 (de) 2006-08-10

Family

ID=22579708

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69928289T Expired - Lifetime DE69928289T2 (de) 1998-09-25 1999-09-24 Ätzkammern mit plasma dichte und geringer kontamination und herstellungsverfahren derselben

Country Status (10)

Country Link
US (3) US6129808A (de)
EP (1) EP1145273B1 (de)
JP (1) JP4612190B2 (de)
KR (1) KR100566908B1 (de)
CN (1) CN1328755C (de)
AU (1) AU1440100A (de)
DE (1) DE69928289T2 (de)
RU (1) RU2237314C2 (de)
TW (1) TW460972B (de)
WO (1) WO2000019481A2 (de)

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US6583064B2 (en) 2003-06-24
TW460972B (en) 2001-10-21
RU2237314C2 (ru) 2004-09-27
EP1145273A2 (de) 2001-10-17
KR100566908B1 (ko) 2006-03-31
CN1328755C (zh) 2007-07-25
EP1145273B1 (de) 2005-11-09
WO2000019481A9 (en) 2002-01-31
US6129808A (en) 2000-10-10
CN1319247A (zh) 2001-10-24
KR20010075264A (ko) 2001-08-09
US20020102858A1 (en) 2002-08-01
WO2000019481A2 (en) 2000-04-06
AU1440100A (en) 2000-04-17
DE69928289T2 (de) 2006-08-10
WO2000019481A3 (en) 2001-12-20
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US6394026B1 (en) 2002-05-28
JP4612190B2 (ja) 2011-01-12

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