DE69929184D1 - Verfahren zur sputterbeschichtung - Google Patents

Verfahren zur sputterbeschichtung

Info

Publication number
DE69929184D1
DE69929184D1 DE69929184T DE69929184T DE69929184D1 DE 69929184 D1 DE69929184 D1 DE 69929184D1 DE 69929184 T DE69929184 T DE 69929184T DE 69929184 T DE69929184 T DE 69929184T DE 69929184 D1 DE69929184 D1 DE 69929184D1
Authority
DE
Germany
Prior art keywords
sputter coating
sputter
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69929184T
Other languages
English (en)
Inventor
R Kahn
R Kaufman
V Zhurin
A Baldwin
L Hylton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commonwealth Scientific Corp
Kaufman and Robinson Inc
Original Assignee
Commonwealth Scientific Corp
Kaufman and Robinson Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commonwealth Scientific Corp, Kaufman and Robinson Inc filed Critical Commonwealth Scientific Corp
Application granted granted Critical
Publication of DE69929184D1 publication Critical patent/DE69929184D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3178—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for applying thin layers on objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/31—Processing objects on a macro-scale
    • H01J2237/3142—Ion plating
    • H01J2237/3146—Ion beam bombardment sputtering
DE69929184T 1998-05-14 1999-05-05 Verfahren zur sputterbeschichtung Expired - Lifetime DE69929184D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US7872798A 1998-05-14 1998-05-14
PCT/US1999/009851 WO1999058737A1 (en) 1998-05-14 1999-05-05 Apparatus for sputter deposition

Publications (1)

Publication Number Publication Date
DE69929184D1 true DE69929184D1 (de) 2006-02-02

Family

ID=22145865

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69929184T Expired - Lifetime DE69929184D1 (de) 1998-05-14 1999-05-05 Verfahren zur sputterbeschichtung

Country Status (6)

Country Link
US (1) US6682634B1 (de)
EP (1) EP1078111B1 (de)
JP (1) JP2002514685A (de)
CA (1) CA2333296A1 (de)
DE (1) DE69929184D1 (de)
WO (1) WO1999058737A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7918876B2 (en) * 2003-03-24 2011-04-05 Theken Spine, Llc Spinal implant adjustment device
JP2007277708A (ja) * 2006-03-17 2007-10-25 Canon Inc 成膜装置および成膜方法
JP5885521B2 (ja) 2012-02-01 2016-03-15 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP7038366B2 (ja) 2018-06-20 2022-03-18 ボード オブ トラスティーズ オブ ミシガン ステート ユニバーシティ 単一ビームプラズマ源
US11170973B2 (en) * 2019-10-09 2021-11-09 Applied Materials, Inc. Temperature control for insertable target holder for solid dopant materials
US11854760B2 (en) 2021-06-21 2023-12-26 Applied Materials, Inc. Crucible design for liquid metal in an ion source
US11901167B2 (en) 2022-04-18 2024-02-13 Plasma-Therm Nes Llc Ion beam deposition target life enhancement

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3156090A (en) * 1961-09-18 1964-11-10 Harold R Kaufman Ion rocket
DE1953659C3 (de) * 1969-10-21 1979-01-25 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Ionenquelle für die Zerstäubung mit langsamen Ionen
US4108751A (en) * 1977-06-06 1978-08-22 King William J Ion beam implantation-sputtering
US4175029A (en) * 1978-03-16 1979-11-20 Dmitriev Jury A Apparatus for ion plasma coating of articles
US4376688A (en) * 1981-04-03 1983-03-15 Xerox Corporation Method for producing semiconductor films
US4693805A (en) * 1986-02-14 1987-09-15 Boe Limited Method and apparatus for sputtering a dielectric target or for reactive sputtering
US4747922A (en) * 1986-03-25 1988-05-31 The United States Of America As Represented By The United States Department Of Energy Confined ion beam sputtering device and method
GB2208390B (en) * 1987-08-06 1991-03-27 Plessey Co Plc Thin film deposition process
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten

Also Published As

Publication number Publication date
CA2333296A1 (en) 1999-11-18
JP2002514685A (ja) 2002-05-21
US6682634B1 (en) 2004-01-27
WO1999058737A1 (en) 1999-11-18
EP1078111A1 (de) 2001-02-28
EP1078111B1 (de) 2005-12-28

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Legal Events

Date Code Title Description
8332 No legal effect for de