DE69932221D1 - Selbserhöhte Wortleitung - Google Patents
Selbserhöhte WortleitungInfo
- Publication number
- DE69932221D1 DE69932221D1 DE69932221T DE69932221T DE69932221D1 DE 69932221 D1 DE69932221 D1 DE 69932221D1 DE 69932221 T DE69932221 T DE 69932221T DE 69932221 T DE69932221 T DE 69932221T DE 69932221 D1 DE69932221 D1 DE 69932221D1
- Authority
- DE
- Germany
- Prior art keywords
- wordline
- elevated
- self
- elevated wordline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/408—Address circuits
- G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/215,854 US6031768A (en) | 1998-12-18 | 1998-12-18 | Self boosted wordline |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE69932221D1 true DE69932221D1 (de) | 2006-08-17 |
Family
ID=22804680
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69932221T Expired - Lifetime DE69932221D1 (de) | 1998-12-18 | 1999-12-13 | Selbserhöhte Wortleitung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6031768A (de) |
| EP (1) | EP1014380B1 (de) |
| JP (1) | JP2000187980A (de) |
| DE (1) | DE69932221D1 (de) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6240026B1 (en) * | 2000-03-07 | 2001-05-29 | Stmicroelectronics, Inc. | Bit line sense circuit and method for dynamic random access memories |
| JP3856424B2 (ja) | 2000-12-25 | 2006-12-13 | 株式会社東芝 | 半導体記憶装置 |
| CN110033807B (zh) * | 2019-03-04 | 2021-06-15 | 上海华力集成电路制造有限公司 | 字线梯升器及使用该字线梯升器减缓读取扰动的方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5255235A (en) * | 1987-05-15 | 1993-10-19 | Mitsubishi Denki Kabushiki Kaisha | Dynamic random access memory with dummy word lines connected to bit line potential adjusting capacitors |
| US6480407B1 (en) * | 1995-08-25 | 2002-11-12 | Micron Technology, Inc. | Reduced area sense amplifier isolation layout in a dynamic RAM architecture |
| US5835438A (en) * | 1996-12-24 | 1998-11-10 | Mosaid Technologies Incorporated | Precharge-enable self boosting word line driver for an embedded DRAM |
| US5949720A (en) * | 1998-10-30 | 1999-09-07 | Stmicroelectronics, Inc. | Voltage clamping method and apparatus for dynamic random access memory devices |
| US5946264A (en) * | 1998-10-30 | 1999-08-31 | Stmicroelectronics, Inc. | Method and structure for enhancing the access time of integrated circuit memory devices |
-
1998
- 1998-12-18 US US09/215,854 patent/US6031768A/en not_active Expired - Lifetime
-
1999
- 1999-12-10 JP JP11351423A patent/JP2000187980A/ja active Pending
- 1999-12-13 EP EP99310030A patent/EP1014380B1/de not_active Expired - Lifetime
- 1999-12-13 DE DE69932221T patent/DE69932221D1/de not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP1014380B1 (de) | 2006-07-05 |
| US6031768A (en) | 2000-02-29 |
| EP1014380A1 (de) | 2000-06-28 |
| JP2000187980A (ja) | 2000-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8332 | No legal effect for de |