DE69932783D1 - TFT Matrix Paneel - Google Patents
TFT Matrix PaneelInfo
- Publication number
- DE69932783D1 DE69932783D1 DE69932783T DE69932783T DE69932783D1 DE 69932783 D1 DE69932783 D1 DE 69932783D1 DE 69932783 T DE69932783 T DE 69932783T DE 69932783 T DE69932783 T DE 69932783T DE 69932783 D1 DE69932783 D1 DE 69932783D1
- Authority
- DE
- Germany
- Prior art keywords
- matrix panel
- tft matrix
- tft
- panel
- matrix
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000011159 matrix material Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136204—Arrangements to prevent high voltage or static electricity failures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24615198 | 1998-08-31 | ||
JP24615198 | 1998-08-31 | ||
JP23577099A JP4632383B2 (ja) | 1998-08-31 | 1999-08-23 | 光電変換装置に用いられる半導体装置 |
JP23577099 | 1999-08-23 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69932783D1 true DE69932783D1 (de) | 2006-09-28 |
DE69932783T2 DE69932783T2 (de) | 2007-08-30 |
Family
ID=26532319
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69932783T Expired - Lifetime DE69932783T2 (de) | 1998-08-31 | 1999-08-27 | TFT Matrix Paneel |
Country Status (5)
Country | Link |
---|---|
US (5) | US6586769B1 (de) |
EP (3) | EP1473768A3 (de) |
JP (1) | JP4632383B2 (de) |
CN (1) | CN1144292C (de) |
DE (1) | DE69932783T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002050754A (ja) * | 2000-05-08 | 2002-02-15 | Canon Inc | 半導体装置とその製造方法、放射線検出装置とそれを用いた放射線検出システム |
JP4630432B2 (ja) * | 2000-08-09 | 2011-02-09 | キヤノン株式会社 | 光電変換装置 |
CN100421208C (zh) * | 2004-03-04 | 2008-09-24 | 统宝光电股份有限公司 | 薄膜晶体管阵列的制造方法与装置 |
JP4785392B2 (ja) * | 2004-03-26 | 2011-10-05 | キヤノン株式会社 | テラヘルツ電磁波の発生素子の製造方法 |
JP2005286212A (ja) * | 2004-03-30 | 2005-10-13 | Toshiba Matsushita Display Technology Co Ltd | 薄膜トランジスタ基板、表示装置及びcadプログラム |
JP4845352B2 (ja) * | 2004-06-15 | 2011-12-28 | キヤノン株式会社 | 放射線撮像装置、その製造方法及び放射線撮像システム |
JP2006308803A (ja) * | 2005-04-27 | 2006-11-09 | Nec Lcd Technologies Ltd | 液晶表示装置 |
JP5252817B2 (ja) * | 2006-03-29 | 2013-07-31 | キヤノン株式会社 | 撮像装置、放射線撮像装置、撮像装置の駆動方法、放射線撮像システムおよび撮像装置の製造方法 |
US8613097B2 (en) * | 2006-08-31 | 2013-12-17 | Red Hat, Inc. | Methods and systems for detecting an access attack |
KR101306860B1 (ko) * | 2006-11-07 | 2013-09-10 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
JP2008176265A (ja) * | 2007-01-16 | 2008-07-31 | Samsung Sdi Co Ltd | 有機電界発光表示装置 |
JP2009302092A (ja) * | 2008-06-10 | 2009-12-24 | Epson Imaging Devices Corp | 固体撮像装置 |
JP2012195509A (ja) | 2011-03-17 | 2012-10-11 | Canon Inc | 半導体装置及びその製造方法 |
US8929132B2 (en) * | 2011-11-17 | 2015-01-06 | Everspin Technologies, Inc. | Write driver circuit and method for writing to a spin-torque MRAM |
JP6266444B2 (ja) * | 2014-06-20 | 2018-01-24 | ザインエレクトロニクス株式会社 | 半導体装置 |
JP6720963B2 (ja) | 2015-03-18 | 2020-07-08 | 凸版印刷株式会社 | 薄膜トランジスタアレイ、画像表示装置および薄膜トランジスタアレイの製造方法 |
CN105304046A (zh) * | 2015-11-19 | 2016-02-03 | 深圳市华星光电技术有限公司 | 液晶显示装置以及液晶显示器 |
JP6882861B2 (ja) * | 2016-07-14 | 2021-06-02 | キヤノン株式会社 | 半導体装置、液体吐出ヘッド、液体吐出ヘッドカートリッジおよび記録装置 |
CN112513959B (zh) * | 2018-07-30 | 2022-11-01 | 夏普株式会社 | 显示设备 |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59126663A (ja) * | 1983-01-11 | 1984-07-21 | Seiko Epson Corp | 半導体装置 |
JP2610328B2 (ja) * | 1988-12-21 | 1997-05-14 | 株式会社東芝 | 液晶表示素子の製造方法 |
JP2764139B2 (ja) * | 1989-10-20 | 1998-06-11 | ホシデン・フィリップス・ディスプレイ株式会社 | アクティブマトリックス液晶表示素子 |
GB9106720D0 (en) * | 1991-03-28 | 1991-05-15 | Secr Defence | Large area liquid crystal displays |
US5497146A (en) | 1992-06-03 | 1996-03-05 | Frontec, Incorporated | Matrix wiring substrates |
JP3101109B2 (ja) * | 1992-12-28 | 2000-10-23 | カシオ計算機株式会社 | 薄膜トランジスタアレイ及びその製造方法 |
JP2552070B2 (ja) * | 1993-02-18 | 1996-11-06 | 株式会社ジーティシー | アクティブマトリックス型表示装置およびその駆動方法 |
US5428300A (en) * | 1993-04-26 | 1995-06-27 | Telenix Co., Ltd. | Method and apparatus for testing TFT-LCD |
JP3316929B2 (ja) * | 1993-05-07 | 2002-08-19 | 三菱電機株式会社 | マトリックス配線基板 |
JPH07225393A (ja) * | 1994-02-10 | 1995-08-22 | Matsushita Electric Ind Co Ltd | アクティブマトリクス方式液晶表示装置 |
JPH07287249A (ja) * | 1994-04-19 | 1995-10-31 | Oki Electric Ind Co Ltd | 薄膜トランジスタアレイ及びその検査方法 |
JPH0822024A (ja) | 1994-07-05 | 1996-01-23 | Mitsubishi Electric Corp | アクティブマトリクス基板およびその製法 |
US5591963A (en) | 1994-08-22 | 1997-01-07 | Canon Kabushiki Kaisha | Photoelectric conversion device with dual insulating layer |
US6104041A (en) * | 1994-08-24 | 2000-08-15 | Sarnoff Corporation | Switching circuitry layout for an active matrix electroluminescent display pixel with each pixel provided with the transistors |
US6081305A (en) * | 1995-05-30 | 2000-06-27 | Hitachi, Ltd. | Liquid crystal light valve and projection type liquid crystal display using such valve |
JP3438411B2 (ja) * | 1995-05-31 | 2003-08-18 | ソニー株式会社 | 絶縁体基板の製造方法および半導体装置の製造方法 |
JP3500771B2 (ja) * | 1995-06-05 | 2004-02-23 | 株式会社日立製作所 | 撮像装置 |
US5668032A (en) * | 1995-07-31 | 1997-09-16 | Holmberg; Scott H. | Active matrix ESD protection and testing scheme |
DE69532724T2 (de) * | 1995-08-07 | 2005-03-17 | Hitachi, Ltd. | Gegen statische elektrizität unempfindliche flüssigkristall-anzeigevorrichtung mit aktiver matrix |
JP3007025B2 (ja) * | 1995-08-25 | 2000-02-07 | シャープ株式会社 | アクティブマトリクス型液晶表示装置及びその製造方法 |
JPH0990409A (ja) * | 1995-09-28 | 1997-04-04 | Casio Comput Co Ltd | 液晶表示素子 |
JP3313282B2 (ja) * | 1996-06-24 | 2002-08-12 | 株式会社日立製作所 | 液晶表示装置 |
US5945970A (en) * | 1996-09-06 | 1999-08-31 | Samsung Electronics Co., Ltd. | Liquid crystal display devices having improved screen clearing capability and methods of operating same |
JP4100739B2 (ja) * | 1996-10-24 | 2008-06-11 | キヤノン株式会社 | 光電変換装置 |
US5736732A (en) * | 1996-12-23 | 1998-04-07 | General Electric Company | Induced charge prevention in semiconductor imaging devices |
TW440736B (en) * | 1997-10-14 | 2001-06-16 | Samsung Electronics Co Ltd | Liquid crystal displays and manufacturing methods thereof |
JPH11326954A (ja) * | 1998-05-15 | 1999-11-26 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
JP4252126B2 (ja) * | 1998-06-19 | 2009-04-08 | シャープ株式会社 | 液晶表示装置の製造方法 |
SG104277A1 (en) * | 2001-09-24 | 2004-06-21 | Inst Of Microelectronics | Circuit for measuring changes in capacitor gap using a switched capacitor technique |
-
1999
- 1999-08-23 JP JP23577099A patent/JP4632383B2/ja not_active Expired - Fee Related
- 1999-08-27 DE DE69932783T patent/DE69932783T2/de not_active Expired - Lifetime
- 1999-08-27 EP EP04076772A patent/EP1473768A3/de not_active Withdrawn
- 1999-08-27 EP EP06076200A patent/EP1717853A3/de not_active Withdrawn
- 1999-08-27 EP EP99306846A patent/EP0993038B1/de not_active Expired - Lifetime
- 1999-08-27 US US09/384,424 patent/US6586769B1/en not_active Expired - Fee Related
- 1999-08-31 CN CNB991183436A patent/CN1144292C/zh not_active Expired - Fee Related
-
2002
- 2002-11-29 US US10/305,981 patent/US6909116B2/en not_active Expired - Fee Related
-
2004
- 2004-10-22 US US10/969,875 patent/US7098481B2/en not_active Expired - Fee Related
-
2005
- 2005-12-09 US US11/297,414 patent/US7394101B2/en not_active Expired - Fee Related
-
2008
- 2008-06-11 US US12/136,984 patent/US7888680B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1473768A3 (de) | 2006-01-11 |
US6909116B2 (en) | 2005-06-21 |
CN1254187A (zh) | 2000-05-24 |
US6586769B1 (en) | 2003-07-01 |
CN1144292C (zh) | 2004-03-31 |
US20050051779A1 (en) | 2005-03-10 |
US7888680B2 (en) | 2011-02-15 |
US20030111664A1 (en) | 2003-06-19 |
EP0993038A1 (de) | 2000-04-12 |
DE69932783T2 (de) | 2007-08-30 |
EP1717853A3 (de) | 2012-05-30 |
US7394101B2 (en) | 2008-07-01 |
EP1473768A2 (de) | 2004-11-03 |
JP2000148044A (ja) | 2000-05-26 |
US20060087577A1 (en) | 2006-04-27 |
US7098481B2 (en) | 2006-08-29 |
EP1717853A2 (de) | 2006-11-02 |
EP0993038B1 (de) | 2006-08-16 |
JP4632383B2 (ja) | 2011-02-16 |
US20090001379A1 (en) | 2009-01-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |