DE69941532D1 - Bildaufnahmesystem - Google Patents

Bildaufnahmesystem

Info

Publication number
DE69941532D1
DE69941532D1 DE69941532T DE69941532T DE69941532D1 DE 69941532 D1 DE69941532 D1 DE 69941532D1 DE 69941532 T DE69941532 T DE 69941532T DE 69941532 T DE69941532 T DE 69941532T DE 69941532 D1 DE69941532 D1 DE 69941532D1
Authority
DE
Germany
Prior art keywords
imaging system
imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941532T
Other languages
English (en)
Inventor
Frederick A Perner
Charles M C Tan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69941532D1 publication Critical patent/DE69941532D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H04N25/533—Control of the integration time by using differing integration times for different sensor regions
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
DE69941532T 1998-11-18 1999-11-17 Bildaufnahmesystem Expired - Lifetime DE69941532D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/195,588 US6580454B1 (en) 1998-11-18 1998-11-18 CMOS active pixel sensor having in-pixel local exposure control

Publications (1)

Publication Number Publication Date
DE69941532D1 true DE69941532D1 (de) 2009-11-26

Family

ID=22721982

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941532T Expired - Lifetime DE69941532D1 (de) 1998-11-18 1999-11-17 Bildaufnahmesystem

Country Status (4)

Country Link
US (1) US6580454B1 (de)
EP (1) EP1003330B1 (de)
JP (1) JP4389190B2 (de)
DE (1) DE69941532D1 (de)

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US6452152B1 (en) * 2000-02-22 2002-09-17 Pixim, Inc. Sense amplifier having a precision analog reference level for use with image sensors
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US6985181B2 (en) * 2000-05-09 2006-01-10 Pixim, Inc. CMOS sensor array with a memory interface
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TW514854B (en) * 2000-08-23 2002-12-21 Semiconductor Energy Lab Portable information apparatus and method of driving the same
US7184014B2 (en) * 2000-10-05 2007-02-27 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US6950135B2 (en) * 2001-01-24 2005-09-27 Hewlett-Packard Development Company, L.P. Method and apparatus for gathering three dimensional data with a digital imaging system
US6747623B2 (en) * 2001-02-09 2004-06-08 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and method of driving the same
US20020113887A1 (en) * 2001-02-16 2002-08-22 Iimura Russell M. CMOS image sensor with extended dynamic range
US20040201697A1 (en) * 2001-05-07 2004-10-14 Vernon Lawrence Klein "Black-box" video or still recorder for commercial and consumer vehicles
TWI273539B (en) * 2001-11-29 2007-02-11 Semiconductor Energy Lab Display device and display system using the same
JP3913534B2 (ja) * 2001-11-30 2007-05-09 株式会社半導体エネルギー研究所 表示装置及びこれを用いた表示システム
US20030206236A1 (en) * 2002-05-06 2003-11-06 Agfa Corporation CMOS digital image sensor system and method
US7106367B2 (en) * 2002-05-13 2006-09-12 Micron Technology, Inc. Integrated CMOS imager and microcontroller
US7256421B2 (en) 2002-05-17 2007-08-14 Semiconductor Energy Laboratory, Co., Ltd. Display device having a structure for preventing the deterioration of a light emitting device
JP4067878B2 (ja) * 2002-06-06 2008-03-26 株式会社半導体エネルギー研究所 発光装置及びそれを用いた電気器具
JP4172216B2 (ja) * 2002-07-16 2008-10-29 ソニー株式会社 撮像装置
TWI286436B (en) * 2003-02-27 2007-09-01 Advmatch Technology Inc Image sensing device to determine the exposure time automatically
CA2443206A1 (en) * 2003-09-23 2005-03-23 Ignis Innovation Inc. Amoled display backplanes - pixel driver circuits, array architecture, and external compensation
JP3723563B2 (ja) * 2004-04-07 2005-12-07 廣津 総吉 半導体撮像素子
JP4589131B2 (ja) * 2005-01-24 2010-12-01 株式会社フォトロン 画像センサおよびその画像読み出し方法
US7565077B2 (en) * 2006-05-19 2009-07-21 Seiko Epson Corporation Multiple exposure regions in a single frame using a rolling shutter
AT504582B1 (de) * 2006-11-23 2008-12-15 Arc Austrian Res Centers Gmbh Verfahren zur generierung eines bildes in elektronischer form, bildelement für einen bildsensor zur generierung eines bildes sowie bildsensor
US8289430B2 (en) * 2007-02-09 2012-10-16 Gentex Corporation High dynamic range imaging device
US20090002535A1 (en) * 2007-06-27 2009-01-01 Arizona Board Of Regents On Behalf Of Arizona State University Offset-compensated self-reset cmos image sensors
US7920193B2 (en) * 2007-10-23 2011-04-05 Aptina Imaging Corporation Methods, systems and apparatuses using barrier self-calibration for high dynamic range imagers
US8587706B2 (en) 2008-01-30 2013-11-19 Gentex Corporation Imaging device
US8629927B2 (en) * 2008-04-09 2014-01-14 Gentex Corporation Imaging device
EP2093996A1 (de) * 2008-02-22 2009-08-26 CSEM Centre Suisse d'Electronique et de Microtechnique SA Recherche et Développement Bildsensor für die Messung von Invarianten wie den Kontrasten und Methode zur Durchführung einer solchen Messung
US8836835B2 (en) 2010-10-04 2014-09-16 International Business Machines Corporation Pixel sensor cell with hold node for leakage cancellation and methods of manufacture and design structure
US9052497B2 (en) 2011-03-10 2015-06-09 King Abdulaziz City For Science And Technology Computing imaging data using intensity correlation interferometry
US9099214B2 (en) 2011-04-19 2015-08-04 King Abdulaziz City For Science And Technology Controlling microparticles through a light field having controllable intensity and periodicity of maxima thereof
JP5808162B2 (ja) * 2011-06-23 2015-11-10 キヤノン株式会社 撮像素子、撮像装置及び撮像素子の駆動方法
US9200954B2 (en) 2011-11-07 2015-12-01 The Johns Hopkins University Flexible readout and signal processing in a computational sensor array
JP5956755B2 (ja) * 2012-01-06 2016-07-27 キヤノン株式会社 固体撮像装置および撮像システム
WO2013123133A1 (en) 2012-02-14 2013-08-22 Gentex Corporation High dynamic range imager system
EP2637400A3 (de) * 2012-03-09 2014-06-18 Sick Ag Bildsensor und Verfahren zur Aufnahme eines Bildes
CN102739924B (zh) * 2012-05-31 2014-04-16 浙江大华技术股份有限公司 一种图像处理方法和系统
WO2014087561A1 (ja) * 2012-12-06 2014-06-12 パナソニック株式会社 Ａｄ変換器、イメージセンサ、およびデジタルカメラ
US9319605B2 (en) 2013-03-15 2016-04-19 Rambus Inc. Increasing dynamic range using multisampling
JP6230260B2 (ja) * 2013-04-24 2017-11-15 キヤノン株式会社 撮像装置、撮像システム、撮像装置の駆動方法
EP3611914A4 (de) 2017-06-09 2020-03-25 Huawei Technologies Co., Ltd. Methode und apparat für die fotografie von bildern
JP6987603B2 (ja) * 2017-10-26 2022-01-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
JP7018293B2 (ja) * 2017-11-06 2022-02-10 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
US10827142B2 (en) * 2018-03-02 2020-11-03 Facebook Technologies, Llc Digital pixel array with adaptive exposure
JP7150979B2 (ja) 2018-09-07 2022-10-11 ドルビー ラボラトリーズ ライセンシング コーポレイション エントロピー分散に基づくイメージセンサの自動露出
EP3847800B1 (de) 2018-09-07 2023-07-26 Dolby Laboratories Licensing Corporation Automatische belichtung von bildsensoren mit hohem dynamikbereich mit räumlich gemultiplexter belichtung
JP7338983B2 (ja) * 2019-02-18 2023-09-05 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
KR20200143141A (ko) 2019-06-14 2020-12-23 삼성전자주식회사 Cis, 및 그 cis에서 픽셀별 ae 방법
KR20210059469A (ko) 2019-11-15 2021-05-25 삼성전자주식회사 픽셀 어레이 및 이를 포함하는 이미지 센서
CN112367476B (zh) * 2020-10-30 2022-04-08 Oppo广东移动通信有限公司 Tof相机的曝光时间确定方法、装置及终端设备

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BE788583A (fr) * 1971-09-16 1973-01-02 Intel Corp Cellule a trois lignes pour memoire a circuit integre a acces aleatoir
JPS5154789A (de) * 1974-11-09 1976-05-14 Nippon Electric Co
US4707124A (en) * 1985-09-03 1987-11-17 CH2 M Hill, Inc. Apparatus for exposing photosensitive media
JPH0258981A (ja) * 1988-08-24 1990-02-28 Nikon Corp 電子スチルカメラ
JP2833729B2 (ja) * 1992-06-30 1998-12-09 キヤノン株式会社 固体撮像装置
US5565915A (en) * 1993-06-15 1996-10-15 Matsushita Electric Industrial Co., Ltd. Solid-state image taking apparatus including photodiode and circuit for converting output signal of the photodiode into signal which varies with time at variation rate depending on intensity of light applied to the photodiode
US5461425A (en) 1994-02-15 1995-10-24 Stanford University CMOS image sensor with pixel level A/D conversion
JP2953297B2 (ja) 1994-03-30 1999-09-27 日本電気株式会社 受光素子およびその駆動方法
PT864223E (pt) 1996-09-27 2002-09-30 Markus Bohm Sensor optico auto-adaptavel localmente.
JPH11298799A (ja) * 1998-04-15 1999-10-29 Honda Motor Co Ltd 光センサ信号処理装置

Also Published As

Publication number Publication date
EP1003330A1 (de) 2000-05-24
JP2000217037A (ja) 2000-08-04
JP4389190B2 (ja) 2009-12-24
EP1003330B1 (de) 2009-10-14
US6580454B1 (en) 2003-06-17

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