DE69942020D1 - Plasmabehandlungsgerät - Google Patents

Plasmabehandlungsgerät

Info

Publication number
DE69942020D1
DE69942020D1 DE69942020T DE69942020T DE69942020D1 DE 69942020 D1 DE69942020 D1 DE 69942020D1 DE 69942020 T DE69942020 T DE 69942020T DE 69942020 T DE69942020 T DE 69942020T DE 69942020 D1 DE69942020 D1 DE 69942020D1
Authority
DE
Germany
Prior art keywords
chamber
gas
plasma
treatment device
plasma treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942020T
Other languages
English (en)
Inventor
Jyoti Kiron Bhardwaj
Leslie Michael Lea
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Surface Technology Systems Ltd
Original Assignee
Surface Technology Systems Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GBGB9827196.8A external-priority patent/GB9827196D0/en
Priority claimed from GBGB9901869.9A external-priority patent/GB9901869D0/en
Priority claimed from GBGB9908459.2A external-priority patent/GB9908459D0/en
Application filed by Surface Technology Systems Ltd filed Critical Surface Technology Systems Ltd
Application granted granted Critical
Publication of DE69942020D1 publication Critical patent/DE69942020D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H01J2237/3348—Problems associated with etching control of ion bombardment energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H01L21/30655—Plasma etching; Reactive-ion etching comprising alternated and repeated etching and passivation steps, e.g. Bosch process
DE69942020T 1998-12-11 1999-12-10 Plasmabehandlungsgerät Expired - Lifetime DE69942020D1 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
GBGB9827196.8A GB9827196D0 (en) 1998-12-11 1998-12-11 Plasma processing apparatus
GBGB9901869.9A GB9901869D0 (en) 1999-01-29 1999-01-29 Plasma processing apparatus
GBGB9908459.2A GB9908459D0 (en) 1999-04-14 1999-04-14 Plasma processing apparatus
PCT/GB1999/004168 WO2000036631A1 (en) 1998-12-11 1999-12-10 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
DE69942020D1 true DE69942020D1 (de) 2010-04-01

Family

ID=27269583

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69942020T Expired - Lifetime DE69942020D1 (de) 1998-12-11 1999-12-10 Plasmabehandlungsgerät

Country Status (7)

Country Link
US (1) US7491649B2 (de)
EP (1) EP1055250B1 (de)
JP (1) JP4714309B2 (de)
KR (2) KR100829288B1 (de)
AT (1) ATE458261T1 (de)
DE (1) DE69942020D1 (de)
WO (1) WO2000036631A1 (de)

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DE69942020D1 (de) 1998-12-11 2010-04-01 Surface Technology Systems Plc Plasmabehandlungsgerät
DE19933841A1 (de) * 1999-07-20 2001-02-01 Bosch Gmbh Robert Vorrichtung und Verfahren zum Ätzen eines Substrates mittels eines induktiv gekoppelten Plasmas
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GB0100958D0 (en) * 2001-01-13 2001-02-28 Surface Technology Systems Ltd Plasma processing apparatus
DE10209763A1 (de) * 2002-03-05 2003-10-02 Bosch Gmbh Robert Vorrichtung und Verfahren zum anisotropen Plasmaätzen eines Substrates, insbesondere eines Siliziumkörpers
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DE112005001429T5 (de) * 2004-06-18 2007-04-26 Innovalight, Inc., St. Paul Verfahren und Vorrichtung zum Bilden von Nanopartikeln unter Verwendung von Hochfrequenzplasmen
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US9484214B2 (en) * 2014-02-19 2016-11-01 Lam Research Corporation Systems and methods for improving wafer etch non-uniformity when using transformer-coupled plasma
KR102203973B1 (ko) 2014-04-01 2021-01-18 에베 그룹 에. 탈너 게엠베하 기질의 표면 처리를 위한 방법 및 장치
KR102465801B1 (ko) * 2015-05-22 2022-11-14 주식회사 히타치하이테크 플라스마 처리 장치 및 그것을 이용한 플라스마 처리 방법
KR102334378B1 (ko) * 2015-09-23 2021-12-02 삼성전자 주식회사 유전체 윈도우, 그 윈도우를 포함한 플라즈마 공정 시스템, 및 그 시스템을 이용한 반도체 소자 제조방법
DE102018114159A1 (de) 2018-06-13 2019-12-19 Nippon Kornmeyer Carbon Group Gmbh Plasmaboot zur Aufnahme von Wafern mit regulierter Plasmaabscheidung
US10714329B2 (en) * 2018-09-28 2020-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-clean for contacts

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Also Published As

Publication number Publication date
KR20070060164A (ko) 2007-06-12
JP4714309B2 (ja) 2011-06-29
ATE458261T1 (de) 2010-03-15
WO2000036631A1 (en) 2000-06-22
KR20010040750A (ko) 2001-05-15
EP1055250B1 (de) 2010-02-17
KR100768610B1 (ko) 2007-10-18
KR100829288B1 (ko) 2008-05-13
EP1055250A1 (de) 2000-11-29
US20050159010A1 (en) 2005-07-21
US7491649B2 (en) 2009-02-17
JP2002532896A (ja) 2002-10-02

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