DE69942812D1 - Verfahren zur Herstellung einer Halbleitervorrichtung - Google Patents

Verfahren zur Herstellung einer Halbleitervorrichtung

Info

Publication number
DE69942812D1
DE69942812D1 DE69942812T DE69942812T DE69942812D1 DE 69942812 D1 DE69942812 D1 DE 69942812D1 DE 69942812 T DE69942812 T DE 69942812T DE 69942812 T DE69942812 T DE 69942812T DE 69942812 D1 DE69942812 D1 DE 69942812D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69942812T
Other languages
English (en)
Inventor
Manabu Watanabe
Yoshinori Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Systems Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Systems Co Ltd filed Critical Fuji Electric Systems Co Ltd
Application granted granted Critical
Publication of DE69942812D1 publication Critical patent/DE69942812D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
DE69942812T 1998-12-09 1999-11-24 Verfahren zur Herstellung einer Halbleitervorrichtung Expired - Lifetime DE69942812D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP34959798A JP3548024B2 (ja) 1998-12-09 1998-12-09 半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE69942812D1 true DE69942812D1 (de) 2010-11-11

Family

ID=18404813

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69942796T Expired - Lifetime DE69942796D1 (de) 1998-12-09 1999-11-24 Halbleiteranordnung mit einem Leistungselement und einer Schutzschaltung
DE69942812T Expired - Lifetime DE69942812D1 (de) 1998-12-09 1999-11-24 Verfahren zur Herstellung einer Halbleitervorrichtung
DE69942813T Expired - Lifetime DE69942813D1 (de) 1998-12-09 1999-11-24 Halbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69942796T Expired - Lifetime DE69942796D1 (de) 1998-12-09 1999-11-24 Halbleiteranordnung mit einem Leistungselement und einer Schutzschaltung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69942813T Expired - Lifetime DE69942813D1 (de) 1998-12-09 1999-11-24 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US6262902B1 (de)
EP (3) EP2015361B1 (de)
JP (1) JP3548024B2 (de)
DE (3) DE69942796D1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3826749B2 (ja) * 2001-08-22 2006-09-27 株式会社日立製作所 シャント抵抗を備えた電力変換装置
DE10143932B4 (de) * 2001-09-07 2006-04-27 eupec Europäische Gesellschaft für Leistungshalbleiter mbH & Co. KG Shunt-Widerstandanordnung
AU2002341359A1 (en) * 2001-09-27 2003-04-07 Galil Medical Ltd. Apparatus and method for cryosurgical treatment of tumors of the breast
JP2003218318A (ja) * 2002-01-21 2003-07-31 Mitsubishi Electric Corp 半導体パワーモジュール、半導体パワーモジュールに用いる絶縁基板及び該絶縁基板の製造方法
US6653812B1 (en) 2002-01-31 2003-11-25 Analog Devices, Inc. Space vector modulation methods and structures for electric-motor control
JP4236909B2 (ja) * 2002-11-13 2009-03-11 三菱電機株式会社 電力半導体モジュール
US20040227476A1 (en) * 2002-12-19 2004-11-18 International Rectifier Corp. Flexible inverter power module for motor drives
JP2004343820A (ja) * 2003-05-13 2004-12-02 Mitsubishi Electric Corp 電力変換装置
KR100669327B1 (ko) * 2004-10-11 2007-01-15 삼성에스디아이 주식회사 플라즈마 디스플레이 장치
CN101208854B (zh) * 2006-01-16 2011-10-12 三菱电机株式会社 电动机的驱动电路以及空调机的室外机
US7619302B2 (en) * 2006-05-23 2009-11-17 International Rectifier Corporation Highly efficient both-side-cooled discrete power package, especially basic element for innovative power modules
JP5354144B2 (ja) * 2007-10-22 2013-11-27 東芝キヤリア株式会社 インバータ
US8482904B2 (en) * 2010-05-25 2013-07-09 Lear Corporation Power module with current sensing
JP5800192B2 (ja) * 2011-10-11 2015-10-28 富士電機株式会社 フォトカプラの出力信号受信回路
DE102012211924B4 (de) 2012-07-09 2014-02-13 Infineon Technologies Ag Halbleitermodul mit einem in einer Anschlusslasche integrierten Shunt-Widerstand und Verfahren zur Ermittlung eines durch einen Lastanschluss eines Halbleitermoduls fließenden Stromes
CN102999009B (zh) * 2012-12-11 2016-01-20 深圳市麦格米特驱动技术有限公司 机床控制电路
JP5930954B2 (ja) * 2012-12-14 2016-06-08 三菱電機株式会社 パワーモジュール
US9140735B2 (en) * 2013-05-03 2015-09-22 Infineon Technologies Ag Integration of current measurement in wiring structure of an electronic circuit
JPWO2015005181A1 (ja) * 2013-07-08 2017-03-02 株式会社村田製作所 電力変換部品
JP2015073261A (ja) * 2013-09-03 2015-04-16 ルネサスエレクトロニクス株式会社 半導体装置
JP6487280B2 (ja) * 2015-06-11 2019-03-20 ルネサスエレクトロニクス株式会社 半導体装置
JP6894181B2 (ja) * 2015-06-17 2021-06-30 ダイキン工業株式会社 インバータ装置
CN105609493B (zh) * 2016-03-22 2018-05-11 富士电机（中国）有限公司 一种集成双向升降压功能的八合一igbt模块
JP6691416B2 (ja) * 2016-04-04 2020-04-28 ダイキン工業株式会社 電子回路装置
WO2018235511A1 (ja) * 2017-06-22 2018-12-27 三菱電機株式会社 半導体モジュール
WO2020191848A1 (zh) * 2019-03-25 2020-10-01 广东美的制冷设备有限公司 集成式控制器及其控制方法和制冷设备
CN109861501A (zh) * 2019-03-25 2019-06-07 广东美的制冷设备有限公司 智能功率模块和空调器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3676807A (en) * 1971-05-19 1972-07-11 Tektronix Inc Film attenuator with distributed capacitance high frequency compensation
JPH0231457A (ja) * 1988-07-21 1990-02-01 Matsushita Electric Ind Co Ltd 発光素子駆動用半導体装置
JPH0834705B2 (ja) * 1988-11-16 1996-03-29 株式会社大林組 開閉器
JP2658427B2 (ja) * 1989-01-17 1997-09-30 富士電機株式会社 電力変換用半導体素子のスナバ回路とそのモジュール装置
US5214407A (en) * 1991-11-06 1993-05-25 Hewlett-Packard Company High performance current shunt
JP2979930B2 (ja) * 1993-10-28 1999-11-22 富士電機株式会社 電力用半導体装置のパッケージ
JP3325697B2 (ja) * 1994-01-20 2002-09-17 三菱電機株式会社 パワーデバイスの制御装置およびモータの駆動制御装置
JPH09312376A (ja) * 1996-05-21 1997-12-02 Fuji Electric Co Ltd 半導体装置
EP1028520A4 (de) * 1996-09-06 2000-08-16 Hitachi Ltd Halbleiteranordnung
JP3008924B2 (ja) * 1998-04-10 2000-02-14 富士電機株式会社 パワー素子のドライブ回路

Also Published As

Publication number Publication date
EP1009030B1 (de) 2010-09-29
EP2015361A3 (de) 2009-07-29
EP1009030A3 (de) 2001-10-17
EP2015361B1 (de) 2010-09-29
EP2012357A3 (de) 2009-07-29
EP1009030A2 (de) 2000-06-14
EP2012357A2 (de) 2009-01-07
DE69942813D1 (de) 2010-11-11
US6262902B1 (en) 2001-07-17
EP2015361A2 (de) 2009-01-14
JP2000174202A (ja) 2000-06-23
EP2012357B1 (de) 2010-09-29
DE69942796D1 (de) 2010-11-11
JP3548024B2 (ja) 2004-07-28

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