EP0000082B1 - Process for image-wise modifying the surface of an etchable support and material suitable therefor comprising a colloid layer containing polymers with oxime-ester groups - Google Patents

Process for image-wise modifying the surface of an etchable support and material suitable therefor comprising a colloid layer containing polymers with oxime-ester groups Download PDF

Info

Publication number
EP0000082B1
EP0000082B1 EP78200022A EP78200022A EP0000082B1 EP 0000082 B1 EP0000082 B1 EP 0000082B1 EP 78200022 A EP78200022 A EP 78200022A EP 78200022 A EP78200022 A EP 78200022A EP 0000082 B1 EP0000082 B1 EP 0000082B1
Authority
EP
European Patent Office
Prior art keywords
layer
radiation
polymer
alkyl
including substituted
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
EP78200022A
Other languages
German (de)
French (fr)
Other versions
EP0000082A1 (en
Inventor
Hugo Vital Van Goetham
Marcel August Stroobants
Walter Frans De Winter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Agfa Gevaert NV
Original Assignee
Agfa Gevaert NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agfa Gevaert NV filed Critical Agfa Gevaert NV
Publication of EP0000082A1 publication Critical patent/EP0000082A1/en
Application granted granted Critical
Publication of EP0000082B1 publication Critical patent/EP0000082B1/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer

Definitions

  • the present invention relates to a method and materials for producing image-wise modified etchable supports.
  • This method and materials can be used e.g. in the production of printed circuits, in photochemical tooling, in the production of printing plates etc.
  • the surface of an etchable support or an etchable layer on a support is modified image-wise.
  • the image-wise modification in conformity with an image-wise exposure occurs by means of an etchant, whose action is image-wise controlled by means of an etch-resist.
  • etch-resists are known.
  • the etch-resist controls image-wise the action of the etchant so that the surface of the underlying printing member is modified image-wise so as to obtain an image-wise embossed surface.
  • the depressed areas or cavities will receive the printing ink, which ink is transferred from these cavities or ink cells to the printing stock.
  • the transfer of ink to the printing stock is e.g. due to the suction of the printing stock, the adhesion power and/or viscosity of the ink.
  • the etch-resist controlling the action of the etchant on the underlying printing member may consist e.g. of a hardened relief pattern.
  • the thinner said pattern the more intense the etching, in other words the deeper the etchant attacks the support to be etched.
  • Homogeneous mixtures of photopolymerizable monomers and of a photoinitiator in a binder are extremely sensitive to polymerization inhibition caused by oxygen.
  • Non-polymeric as well as polymeric compounds containing oxime-ester groups are known from US Patent Specification 3,558,309 of Urbain Leopold Laridon and whatsoever Albert Delzenne issued January 26, 1971 for use as photoinitiator in the photopolymerization of ethylenically unsaturated monomers and to make etch-resists with the washing-away step according to the method of the above US Patent 2,760,863.
  • These photoinitiators can of course also be used in the procedure of the above US Patent Specification 3,718,473 without washing away step.
  • etch-resist can be made by image-wise photodegradation of polymers containing oxime-ester groups and washing away the decomposed polymer in the exposed areas by means of solvents in which the non-decomposed polymer in the unexposed areas is insoluble.
  • a hydrophilic colloid layer containing a dispersed phase of a polymer with recurring units containing oxime-ester groups in the side-chain can be used to form an etch-resist in the absence of an ethylenically unsaturated monomer.
  • image-wise exposure the permeability of the colloid layer to an etchant is reduced in the exposed areas, so that there is no need for a washing away step before the application of the etchant.
  • the present invention thus provides a process for image-wise modifying the surface of an etchable support or an etchable layer on a support by making an etchant diffuse image-wise through an etch-resist layer applied to said etchable support or layer, the said etch-resist having been formed by image-wise exposure to actinic radiation of a radiation-sensitive hydrophilic colloid layer, whereby the permeability of the said hydrophilic colloid layer to an etchant is reduced in conformity with the image-wise exposure, characterized in that said hydrophilic colloid layer contains, in the absence of any ethylenically unsaturated photopolymerisable monomeric material, a dispersed phase of at least one radiation-sensitive polymer, the said radiation-sensitive polymer being a homopolymer or copolymer derived from a monomer corresponding to the formula wherein one of M l and M 2 is or comprises an ethylenically unsaturated group, and the other is an aliphatic, aromatic or heterocycl
  • the hydrophilic colloid binder wherein a polymer, whose polymer chain comprises units with oxime-ester groups in the side chain, is heterogeneously dispersed, constitutes the medium, through which an etchant e.g. an Fe(III) chloride solution can diffuse in consequence of the porous behaviour of said medium.
  • an etchant e.g. an Fe(III) chloride solution
  • the oxime-ester units in said polymer form radicals which crosslink with the hydrophilic binder so that the porosity of the layer is reduced and thus the permeability of the layer for a hydrophilic etchant is reduced.
  • Particularly suitable polymeric compounds having side-substituents comprising an oxime-ester group are polymers obtained by (1) the reaction or a monooxime of an ⁇ , ⁇ -diketone or of a 2-oxo- aldehyde e.g. 1-phenyl-1,2-propanedione-2-oxime, 1-(p-hydroxyphenyl)-1,2-propanedione-2-oxime, p-hydroxyphenyl glyoxaldoxime and 2,3-butanedione monooxime with an ethylenically-unsaturated acid chloride e.g.
  • acryloyl or methacryloyl chloride and polymerization or copolymerization of the thus formed monomer carrying an oxime ester group, or (2) the reaction of an ethylenically unsaturated compound comprising an ⁇ , ⁇ -diketo or a 2-oxo-aidehyde monooxime, with a carboxylic acid chloride which includes an aliphatic, aromatic or heterocyclic acid chloride e.g.
  • acetylchloride propionylchloride, benzoylchloride, p-nitrobenzoyl chjoride, o-methoxybenzoyl chloride, o-chlorobenzoyl chloride, 2-methyl-3-indolizine carbonyl chloride, etc., and polymerization or copolymerization of the thus formed monomer carrying an oxime ester group.
  • Particularly suitable polymers are those comprising recurring units corresponding to one of the following general formulae I and II: wherein:
  • the polymers used according to the present invention can be homopolymers or copolymers. They are preferably copolymers comprising besides the units with oxime ester group in the side chain units derived from a variety of monomers, whereof preferably at least one is hydrophobic. Examples of comonomers are (meth)acrylamide, N-alkyl(meth)acrylamide, alkyl(meth)acrylate, styrene, acrylonitrile, N-vinylpyrrolidone, vinyl acetate and other vinyl esters. Preferred copolymers comprise from 5 to 50 mol % recurring units with oxime-ester groups in the side chain.
  • the solution was cooled to 25°C and 92.4 g of sodium hydrogen carbonate (1.1 mole) were added.
  • the mixture was cooled to ambient temperature (20°C). Dry hydrogen chloride was introduced for 15 min and simultaneously a solution of 200 ml of n-amyl nitrite in 200 ml of trichloromethane were added dropwise. The temperature was kept between 20 and 26°C. Subsequently, hydrogen chloride was introduced for another 15 min with stirring. The resulting mixture was allowed to stand overnight. The residue formed was sucked off and dried under vacuum. A light-yellow powder was obtained.
  • This product may be purified by dissolving in a 10% aqueous solution of sodium hydroxide and again forming a residue with HCI or by recrystallization from a mixture of ethanol and water (2:1)
  • the product was stable for some weeks at 0°C.
  • Monomer 2 was prepared as monomer 1 (starting from compound d of preparation 1. using 2.81 g of benzoyl chloride in lieu of 2-methyl-indolizine-3-carbonyl chloride).
  • the above monomers can be homopolymerized or copolymerized to form polymers with recurring units containing an oxime ester group in the side chain as is illustrated in Research Disclosure June 1973, Havant, England, Disclosure No. 11048 and by the following preparations.
  • the molar ratio of methylmethacrylate units to monomer units 2 was 81:19.
  • the resist-forming layer used according to the present invention comprises dispersed in a hydrophilic colloid binder in the absence of any ethylenically unsaturated monomeric material, at least one radiation sensitive polymer which is a homopolymer or a copolymer derived from a monomer corresponding to the general formula given hereinbefore.
  • the hydrophilic colloid used as the binder for the dispersed polymer particles is preferably gelatin, but other hydrophilic colloids can also be used, e.g. colloidal albumin, alginic acid and derivatives thereof, a cellulose derivative e.g. carboxymethylcellulose and hydroxyethylcellulose, a synthetic hydrophilic colloid such as polyvinyl alcohol, poly-N-vinyl pyrrolidone, copolymers of acrylic acid and polyacrylamides. If desired, compatible mixtures of two or more of these colloids can be employed for dispersing the polymer particles.
  • hydrophilic colloids e.g. colloidal albumin, alginic acid and derivatives thereof, a cellulose derivative e.g. carboxymethylcellulose and hydroxyethylcellulose, a synthetic hydrophilic colloid such as polyvinyl alcohol, poly-N-vinyl pyrrolidone, copolymers of acrylic acid and polyacrylamides.
  • the weight ratio of hydrophilic colloid to radiation sensitive polymer is preferably comprised between 20:1 and 1:1.
  • the radiation-sensitive polymers can be dispersed in the hydrophilic colloids using any of the dispersion techniques known for incorporating photographic ingredients e.g. colour couplers in silver halide emulsion layers.
  • a particularly suitable technique is to disperse the polymers from solutions in high-boiling water-immiscible solvents or mixtures of high-boiling and low-boiling water-immiscible solvents, in aqueous solutions of the hydrophilic colloid.
  • high-boiling solvents are tricresyl phosphate, dibutyl phthalate and other esters of organic dicarboxylic acids e.g. diethyl- malonate, diethyloxalate and diethyl succinate.
  • aqueous colloid surfactants which include anionic, non-ionic and amphoteric compounds, e.g. sodium alkylnaphthalene sulphonates, sodium lauryl sulphate, sulphonated derivatives of fatty acid amines, sodium dioctylsulphate, sodium isotetradecyl sulphate and sorbitol monolaurate.
  • anionic, non-ionic and amphoteric compounds e.g. sodium alkylnaphthalene sulphonates, sodium lauryl sulphate, sulphonated derivatives of fatty acid amines, sodium dioctylsulphate, sodium isotetradecyl sulphate and sorbitol monolaurate.
  • the polymers are dispersed in the hydrophilic colloid medium in the form of oily droplets.
  • the average diameter of these droplets may be between 0.01 and 20 microns, preferably between 0.05 and 5 microns.
  • the radiation sensitive resist-forming layer used according to the present invention may comprise, in addition to the binder and radiation sensitive polymer, compounds increasing the sensitivity e.g. Michler's ketone and analogous aromatic ketones which increase the spectral response especially in the range of 270 to 380 ⁇ m.
  • the layer may also comprise so-called "filler"-compounds that are non light-sensitive and do not crosslink with the hydrophilic binder.
  • filler compounds are e.g. co(ethylene glycol isophthalate/isopropylene glycol isophthalate 50:50), co(vinyl chloride/vinyl acetate/maleic acid anhydride), co(vinyl acetate/vinyl chloride), co(vinyl chloride/vinyl acetate/maleic acid), polyvinyl-n-butyral, polyisobutyl methacrylate, polystyrene, polymethyl methacrylate, cellulose acetate butyrate, co(styrene/butadiene), and an epoxy resin of bisphenol A and epichlorohydrin, marketed by Ciba-Geigy, Basel, Switzerland under the trademark of ARALDITE GY 250 being preferred.
  • the layer may also contain antioxidizing agents, coating aids and dyes.
  • Rendering visible the exposure makes possible sensitometric evaluation and follow up of the subsequent etching. Moreover, by producing a colour during exposure, the amount of light transmitted through the layer is reduced and this consequently decreases the sensitivity and gradation of the said layer, which is favourable for continuous-tone reproduction.
  • the resist-forming radiation-sensitive layer can be applied to any support known in the art.
  • Metal supports or supports coated with metals such as for example zinc, and especially aluminium are excellently suited as base materials for planographic printing plates.
  • metal supports suitable for etching are used e.g. metal plates or cylinders of zinc, copper, steel or an etchable magnesium alloy.
  • the photoresist composition is applied e.g. to a supported copper layer, which can be easily etched.
  • the present radiation-sensitive layers can likewise be used in the production of microimages.
  • the photoresist coatings are applied to a relatively thin highly opaque black or grey metal coating that can be etched.
  • Suitable metal coatings are made of tellurium or a tellurium alloy having a thickness in the range of 50 nm to 500 nm or bismuth coatings having a thickness in the range of 25 nm to 300 nm.
  • composition of the metal layer to be etched tellurium alloys comprising at least 50 atomic percent of tellurium are used.
  • Typical tellurium compositions which are etchable with an opaque hypochlorite solution are described in US Patent Specifications 3,271,591 and 3,530,441 of Stanford R. Ovshinsky issued respectively September 6, 1966 and September 22, 1970.
  • the metal layer to be etched consists of bismuth.
  • Bismuth possesses the advantage of directly adhering to organic resin supports such as a polyethylene terephthalate support when deposited thereon from bismuth vapour under reduced pressure conditions.
  • Vapour deposition techniques are sufficiently known to those skilled in the art of preparing photoconductive selenium coatings (see e.g. US Patent Specifications 3,874,917 of Charles Wood, John C. Schottmiller and Francis W. Ryan issued April 1, 1975 and 3,884,688 of John C. Schottmiller, Francis W. Ryan and Charles Wood issued May 20, 1975).
  • aqueous acidic iron(III) chloride solution For the etching of the bismuth layer preference is given to aqueous acidic iron(III) chloride solution.
  • concentration of iron(III) chloride is e.g. in the range of 5 to 20% by weight.
  • Said solution contains preferably from 0.25 to 1% by weight of citric acid.
  • a likewise useful etching solution for the removal of bismuth is an aqueous solution containing 3 to 6% by weight of hydrogen peroxide and 5 to 10% by weight of sulphuric acid.
  • the radiation-sensitive layers according to the invention can be applied to the surfaces to be modified by any known coating technique e.g. by spin-coating, whirl coating, spraying, dip-coating, roller coating, air-knife coating and doctor-blade coating.
  • Preferred temporary supports are transparent film supports which permit exposure through the support. Examples of such transparent supports are cellulose nitrate film, cellulose ester film, polyvinyl acetal film, polystyrene film, polyethylene terephthalate film and related films of resinous materials.
  • Other suitable temporary supports are paper and paper which has been coated with a-olefin polymers, e.g. polyethylene, polypropylene and polyisobutylene-polyethylene mixtures.
  • an antihalation layer between the radiation-sensitive layer and the temporary support e.g. between the stripping layer and the support or between the radiation-sensitive layer and the stripping layer. It is also possible to provide the antihalation layer on the side of the transparent support opposite to that carrying the radiation-sensitive layer.
  • the exposure of the radiation-sensitive resist forming layer preferably occurs by means of UV- radiation sources e.g. carbon arcs and mercury vapour lamps. Exposure may occur through a contacted transparent master pattern or by a projection exposure.
  • UV- radiation sources e.g. carbon arcs and mercury vapour lamps. Exposure may occur through a contacted transparent master pattern or by a projection exposure.
  • aqueous phase containing 60 g of gelatine, 340 g of water, 40 g of a 5% aqueous solution of the sodium salt of diisooctyl sulphosuccinate was prepared as follows: gelatin was allowed to swell for 1 h in water and then heated to 50°C, whereupon the other ingredients of the aqueous phase were added.
  • an organic phase was prepared by dissolving 30 g of tricresyl phosphate, 3 g of Michier's ketone and 20 g of co(ethylene glycol isophthalate/isopropylene glycol isophthalate) (50:50) in 90 g of ethyl acetate and 90 g of m-xylene and then dissolving therein 40 g of the polymer of preparation 4.
  • the organic phase was emulsified in the aqueous phase by means of an homogenizer. Then 760 ml of water and 12.5 g of aqueous formaldehyde (4% by weight) were added to obtain the desired viscosity.
  • the emulsion was dip-coated on a polyethylene terephthalate support and dried.
  • the thickness of the coated layer varied from 5 to 10 ⁇ m.
  • Preparation of the coating composition and coating occurred under darkroom illumination.
  • the image-wise exposure was performed in contact in a vacuum frame in two stages.
  • An exposure was carried out through a gravure screen of 65 lines per cm, in which the ratio of the dark lines to the transparent parts was 1:2.5.
  • the light source used was a mercury vapour lamp.
  • the time ratio between the continuous tone exposure and the screen exposure was 0.66:1.
  • the etch-resist layer showing a brown negative image was transferred by pressure to a wet copper surface.
  • the polyethylene terephthalate support was stripped off and the etch-resist was dried in the air.
  • the parts of the copper surface that were not covered by etch resist were coated with an asphalt derivative.
  • the etching was performed with an iron(lll) chloride solution of 39-43° Baume for about 15 min.
  • the etching was stopped by abundantly rinsing with hot water. The etch-resist was rubbed off easily. The resulting etch depths reached 3 to 45 ,um. No undercutting was observed.
  • Example 1 was repeated with the difference that the aqueous phase contained:
  • the organic phase was dispersed in the aqueous phase and after dilution as in example 1 coated on a polyethylene terephthalate support.

Description

  • The present invention relates to a method and materials for producing image-wise modified etchable supports. This method and materials can be used e.g. in the production of printed circuits, in photochemical tooling, in the production of printing plates etc. According to this method the surface of an etchable support or an etchable layer on a support is modified image-wise. The image-wise modification in conformity with an image-wise exposure occurs by means of an etchant, whose action is image-wise controlled by means of an etch-resist.
  • Various kinds of etch-resists are known. In the preparation of printing plates especially the preparation of gravure printing plates, the etch-resist controls image-wise the action of the etchant so that the surface of the underlying printing member is modified image-wise so as to obtain an image-wise embossed surface.
  • The depressed areas or cavities will receive the printing ink, which ink is transferred from these cavities or ink cells to the printing stock. The transfer of ink to the printing stock is e.g. due to the suction of the printing stock, the adhesion power and/or viscosity of the ink.
  • The etch-resist controlling the action of the etchant on the underlying printing member may consist e.g. of a hardened relief pattern. The thinner said pattern, the more intense the etching, in other words the deeper the etchant attacks the support to be etched.
  • Because of the dependency on many variables it is necessary to simplify the preparation of gravure printing plates. It has been proposed therefore to use more consistent products and methods. For example in the US-Patent Specification 2,760,863 of Louis Plambeck Jr. issued August 28, 1956, a material is described, which comprises a layer consisting of a homogeneous mixture of a photopolymerisable ethylenically unsaturated monomer, a photoinitiator, and a binder. Upon image-wise exposure the monomers in the homogeneous mixture polymerize image-wise, whereas the unexposed areas remain unpolymerized. The unexposed areas are washed away.
  • Homogeneous mixtures of photopolymerizable monomers and of a photoinitiator in a binder are extremely sensitive to polymerization inhibition caused by oxygen.
  • To overcome oxygen inhibition as occurs in the photopolymerization of photopolymerizable monomers homogeneously mixed with a photoinitiator in a hydrophilic colloid binder it has been proposed in the US Patent Specification 3,418,118 of .Glen Anthony Thommes and Peter Walker issued December 24, 1968, to use a heterogeneous dispersion of photopolymerizable monomer and of photoinitiator in a hydrophilic colloid binder.
  • In the US Patent Specification 3,718,473 of Joseph Edmund Gervay and Peter Walker issued February 27, 1973 a material for forming an etch-resist is described which comprises a hydrophilic colloid layer including a dispersed phase of an ethylenically unsaturated monomer and a free-radical photoinitiator. Upon image-wise exposure, image-wise photopolymerization takes place so that the diffusibility of an etchant through the binder layer Is reduced image-wise. The image-wise polymerization of this material changes the chemical and physical behaviour of the heterogeneous layer. In the process according to the above-mentioned Patent Specification there is no need to wash away the unpolymerized monomers.
  • In the above procedures of making etch-resists based on the photoinitiated polymerization of ethylenically unsaturated monomers all kinds of photoinitiators can be used.
  • Non-polymeric as well as polymeric compounds containing oxime-ester groups are known from US Patent Specification 3,558,309 of Urbain Leopold Laridon and Gérard Albert Delzenne issued January 26, 1971 for use as photoinitiator in the photopolymerization of ethylenically unsaturated monomers and to make etch-resists with the washing-away step according to the method of the above US Patent 2,760,863. These photoinitiators can of course also be used in the procedure of the above US Patent Specification 3,718,473 without washing away step.
  • According to UK Patent 1,180,845 filed August 8, 1967 by Gevaert-Agfa N.V., etch-resist can be made by image-wise photodegradation of polymers containing oxime-ester groups and washing away the decomposed polymer in the exposed areas by means of solvents in which the non-decomposed polymer in the unexposed areas is insoluble.
  • Surprisingly, it has been found that a hydrophilic colloid layer containing a dispersed phase of a polymer with recurring units containing oxime-ester groups in the side-chain can be used to form an etch-resist in the absence of an ethylenically unsaturated monomer. By image-wise exposure, the permeability of the colloid layer to an etchant is reduced in the exposed areas, so that there is no need for a washing away step before the application of the etchant.
  • The present invention thus provides a process for image-wise modifying the surface of an etchable support or an etchable layer on a support by making an etchant diffuse image-wise through an etch-resist layer applied to said etchable support or layer, the said etch-resist having been formed by image-wise exposure to actinic radiation of a radiation-sensitive hydrophilic colloid layer, whereby the permeability of the said hydrophilic colloid layer to an etchant is reduced in conformity with the image-wise exposure, characterized in that said hydrophilic colloid layer contains, in the absence of any ethylenically unsaturated photopolymerisable monomeric material, a dispersed phase of at least one radiation-sensitive polymer, the said radiation-sensitive polymer being a homopolymer or copolymer derived from a monomer corresponding to the formula
    Figure imgb0001
    wherein one of Ml and M2 is or comprises an ethylenically unsaturated group, and the other is an aliphatic, aromatic or heterocyclic group, including substituted aliphatic, aromatic or heterocyclic groups, and R represents hydrogen, alkyl including substituted alkyl, or aryl including substituted aryl.
  • The hydrophilic colloid binder wherein a polymer, whose polymer chain comprises units with oxime-ester groups in the side chain, is heterogeneously dispersed, constitutes the medium, through which an etchant e.g. an Fe(III) chloride solution can diffuse in consequence of the porous behaviour of said medium. Upon exposure to actinic radiation, the oxime-ester units in said polymer form radicals which crosslink with the hydrophilic binder so that the porosity of the layer is reduced and thus the permeability of the layer for a hydrophilic etchant is reduced.
  • Particularly suitable polymeric compounds having side-substituents comprising an oxime-ester group are polymers obtained by (1) the reaction or a monooxime of an α,β-diketone or of a 2-oxo- aldehyde e.g. 1-phenyl-1,2-propanedione-2-oxime, 1-(p-hydroxyphenyl)-1,2-propanedione-2-oxime, p-hydroxyphenyl glyoxaldoxime and 2,3-butanedione monooxime with an ethylenically-unsaturated acid chloride e.g. acryloyl or methacryloyl chloride and polymerization or copolymerization of the thus formed monomer carrying an oxime ester group, or (2) the reaction of an ethylenically unsaturated compound comprising an α,β-diketo or a 2-oxo-aidehyde monooxime, with a carboxylic acid chloride which includes an aliphatic, aromatic or heterocyclic acid chloride e.g. acetylchloride, propionylchloride, benzoylchloride, p-nitrobenzoyl chjoride, o-methoxybenzoyl chloride, o-chlorobenzoyl chloride, 2-methyl-3-indolizine carbonyl chloride, etc., and polymerization or copolymerization of the thus formed monomer carrying an oxime ester group.
  • Particularly suitable polymers are those comprising recurring units corresponding to one of the following general formulae I and II:
    Figure imgb0002
    wherein:
    • R1 is hydrogen or C1-CS alkyl e.g. methyl,
    • R2 represents hydrogen, alkyl including substituted alkyl or aryl including substituted aryl,
    • R3 represents alkyl including substituted alkyl, aryl including substituted aryl,
    • X represents -NH- or -0-, and
    • R4 represents an aliphatic, aromatic, or heterocyclic group.
  • The polymers used according to the present invention can be homopolymers or copolymers. They are preferably copolymers comprising besides the units with oxime ester group in the side chain units derived from a variety of monomers, whereof preferably at least one is hydrophobic. Examples of comonomers are (meth)acrylamide, N-alkyl(meth)acrylamide, alkyl(meth)acrylate, styrene, acrylonitrile, N-vinylpyrrolidone, vinyl acetate and other vinyl esters. Preferred copolymers comprise from 5 to 50 mol % recurring units with oxime-ester groups in the side chain.
  • Representative examples of monomers from which the polymers used according to the invention can be derived are:
    Figure imgb0003
    Figure imgb0004
    Figure imgb0005
    Figure imgb0006
    Figure imgb0007
  • Preparation of the latter three monomers and polymerization thereof is illustrated in UK Patent 1,180,845, already mentioned hereinbefore.
  • The following preparations illustrate how monomers 1) and 2) are prepared.
  • Preparation 1 : Monomer 1). a) p-propionyl-acetanilide
  • 1290 g of aluminium chloride (9.6 mole) were suspended with stirring in 1500 ml of carbon disulphide. 405 g of acetanilide (3 moles) were added slowly to this suspension, while the temperature was kept at 25°C. The reaction mixture was heated until reflux and was cooled immediately to 25°C. 565 ml of propionyl chloride (6.5 moles) were added dropwise in such a way that the temperature was kept at 25°C. The reaction mixture was heated until reflux for 5 hours and kept overnight at ambient temperature (20°C). The supernatant carbon disulphide layer was decanted and the remaining viscous mixture was poured in a mixture of ice and hydrochloric acid. The residue formed was filtered off and further recrystallized from a mixture of 1500 ml of ethanol and 75 ml of water. Drying was applied under vacuum at 100°C. A light yellow powder was obtained.
  • Yield: 400 g.
  • Melting Point: 165°C.
  • b) p-propionyl aniline
  • 141 g (1 mole) of p-propionylacetanilide were dissolved while refluxing and stirring into 600 ml of 5N hydrochloric acid. Refluxing was continued for 30 min, cooling was applied, and sodium carbonate (about 300 g) was added, until the reaction mixture was alkaline. The residue formed was sucked off, washed with water until neutral and recrystallized from 725 ml of isopropanol. The mixture was sucked off and washed with ether. After drying under vacuum, a yellow-brownish powder was obtained. Yield: 126 g (85%).
  • Melting point: 138°C.
  • c) N-p-propionylphenyl-methacrylamide
  • 149 g (1 mole) of p-propionylaniline were dissolved in 1250 ml of dioxan with stirring and heating.
  • The solution was cooled to 25°C and 92.4 g of sodium hydrogen carbonate (1.1 mole) were added.
  • A small amount of m-dinitrobenzene and copper(II) acetate were added whereupon a solution of 124.5 g of methacrylyl chloride (1 mole) in 125 ml of dioxan was added dropwise. The temperature was kept at 20-25°C. Stirring was then continued for 30 min whilst slowly heating until reflux. Light yellow needles were sucked off, washed with ether, and dried under vacuum.
  • Yield: 130 g.
  • Melting point: 132°C.
  • The filtrate was evaporated to
    Figure imgb0008
    of its volume and the residue was sucked off, washed with ether, and dried under vacuum. Another 67 g of light-yellow needles melting at 132°C were obtained.
  • d) compound of the formula
  • Figure imgb0009
  • 217 g (1 mole) of N-p-propionylphenyl-methacrylamide were dissolved in 1500 ml of trichloromethane with stirring and slight heating.
  • The mixture was cooled to ambient temperature (20°C). Dry hydrogen chloride was introduced for 15 min and simultaneously a solution of 200 ml of n-amyl nitrite in 200 ml of trichloromethane were added dropwise. The temperature was kept between 20 and 26°C. Subsequently, hydrogen chloride was introduced for another 15 min with stirring. The resulting mixture was allowed to stand overnight. The residue formed was sucked off and dried under vacuum. A light-yellow powder was obtained.
  • Yield: 205 g (83%).
  • Melting point: 210°C.
  • This product may be purified by dissolving in a 10% aqueous solution of sodium hydroxide and again forming a residue with HCI or by recrystallization from a mixture of ethanol and water (2:1)
  • e) 2-methylindolizine
  • A mixture of 92.5 g of monochloroacetone (1 mole) and 93 g of a-picoline (1 mole) was heated for 2t h on a boiling water-bath. The reaction mixture was cooled to ambient temperature (20°C) and kept overnight. A solid black mass formed. Extraction was performed on a hot water-bath until the mass had dissolved completely (about 700 ml). The solution was filtered and washed 3 times with 100 ml of ether. A few ml of an aqueous saturated sodium carbonate solution were added and the solution was then washed again 4 times in ether. 150 g of solid sodium hydrogen carbonate was added carefully and steam distillation was carried out. The distillate was cooled and sucked off. The solid product was dissolved quickly in ether and dried on heated magnesium sulphate. The ether was evaporated and the residue dried.
  • Yield: 165 g (65%).
  • Melting point: 65°C.
  • After steam distillation the product was to be shielded from light.
  • f) 2-methyl-indolizine-3-carbonyl chloride
  • A solution of 99 g of phosgene (1 mole) in 800 ml of anhydrous toluene was cooled beneath 15°C. While the reaction mixture was cooled and stirred a solution of 131 g of methylindolizine (1 mole) in 475 ml of anhydrous toluene were added dropwise. The reaction mixture was kept overnight and the residue formed was sucked off.
  • The filtrate was evaporated to dryness and the residue was recrystallized from 1 litre of anhydrous hexane. The mixture was sucked off and dried under vacuum. Yellowish-green needles were obtained.
  • Yield: 97 g (50%).
  • Melting point: 71°C.
  • The product was stable for some weeks at 0°C.
  • g) monomer 1
  • 4.92 g (0.02 mole) of the compound of step d) were dissolved with stirring in 25 ml of 1 N sodium hydroxide.
  • A small amount of triphenylmethylarsoniumiodide was added and the mixture was cooled in ice- water until the temperature was between 0°C and 5°C. A solution of 3.87 g (0.02 mole) of 2-methylindolizine-3-carbonyl chloride (step f) in 50 ml of methylene chloride was added dropwise in 5 min.
  • Stirring was continued for 30 min at 0-5°C and subsequently at ambient temperature for 2 h. During this operation the pH was checked continuously. The reaction mixture should remain strongly alkaline.
  • A supplemental amount of 50 ml of methylene chloride was added and the water layer was decanted.
  • The mixture was washed a few times with water and the methylene chloride layer was evaporated under vacuum. The residue was washed with a small amount of ether, sucked off, and dried under vacuum. A yellowish green powder was obtained.
  • Yield: 6.1 g (75%).
  • Melting point: 157°C.
  • The product should be shielded from light during and after the reaction. If necessary the product can be purified by recrystallization from a mixture of ethanol and water (90:10 by volume). Elementary analysis:
    Figure imgb0010
  • Preparation 2 : monomer 2
  • Monomer 2 was prepared as monomer 1 (starting from compound d of preparation 1. using 2.81 g of benzoyl chloride in lieu of 2-methyl-indolizine-3-carbonyl chloride).
  • The above monomers can be homopolymerized or copolymerized to form polymers with recurring units containing an oxime ester group in the side chain as is illustrated in Research Disclosure June 1973, Havant, England, Disclosure No. 11048 and by the following preparations.
  • Preparation 3 Copolymer of methylmethacrylate and monomer 2
  • 3 g of azobis-isobutyronitrile were added to a solution of 70 g of monomer 2 and 80 g of methyl methacrylate (0.8 mole) in 750 ml of dimethylformamide. The solution was stirred under nitrogen atmosphere at 75°C for 24 hours. The viscous solution was allowed to form a residue in methanol and the polymer obtained was separated and sucked off under vacuum.
  • During and after the reaction the product was shielded from light.
  • Yield: 135 g (90%) [η]THF = 0.15-0.20 (THF = tetrahydrofuran)
  • The molar ratio of methylmethacrylate units to monomer units 2 was 81:19.
  • Preparation 4 Copolymer of methylmethacrylate and monomer 1
  • 3 g of azobis-isobutyronitrile were added to a solution of 40.45 g of monomer 1 (0.15 mole) and 85 g of methyl methacrylate (0.85 mole) in 750 ml of dimethylformamide. The solution was stirred in nitrogen atmosphere at 75°C for 24 h. The viscous solution was allowed to form a residue in methanol and the polymer obtained was sucked off and dried under vacuum. The product was shielded from light during and after the reaction.
    • Yield: 123 g [η]THF = 0. 10 (THF = tetrahydrofuran)
    • The molar ratio of methylmethacrylate units to monomer units 1 was 85:15.
  • The resist-forming layer used according to the present invention comprises dispersed in a hydrophilic colloid binder in the absence of any ethylenically unsaturated monomeric material, at least one radiation sensitive polymer which is a homopolymer or a copolymer derived from a monomer corresponding to the general formula given hereinbefore.
  • The hydrophilic colloid used as the binder for the dispersed polymer particles is preferably gelatin, but other hydrophilic colloids can also be used, e.g. colloidal albumin, alginic acid and derivatives thereof, a cellulose derivative e.g. carboxymethylcellulose and hydroxyethylcellulose, a synthetic hydrophilic colloid such as polyvinyl alcohol, poly-N-vinyl pyrrolidone, copolymers of acrylic acid and polyacrylamides. If desired, compatible mixtures of two or more of these colloids can be employed for dispersing the polymer particles.
  • The weight ratio of hydrophilic colloid to radiation sensitive polymer is preferably comprised between 20:1 and 1:1.
  • The radiation-sensitive polymers can be dispersed in the hydrophilic colloids using any of the dispersion techniques known for incorporating photographic ingredients e.g. colour couplers in silver halide emulsion layers. A particularly suitable technique is to disperse the polymers from solutions in high-boiling water-immiscible solvents or mixtures of high-boiling and low-boiling water-immiscible solvents, in aqueous solutions of the hydrophilic colloid. Examples of such high-boiling solvents are tricresyl phosphate, dibutyl phthalate and other esters of organic dicarboxylic acids e.g. diethyl- malonate, diethyloxalate and diethyl succinate. In dispersing the polymer droplets in the aqueous colloid surfactants can be used which include anionic, non-ionic and amphoteric compounds, e.g. sodium alkylnaphthalene sulphonates, sodium lauryl sulphate, sulphonated derivatives of fatty acid amines, sodium dioctylsulphate, sodium isotetradecyl sulphate and sorbitol monolaurate.
  • By the use of the high-boiling water-immiscible solvents the polymers are dispersed in the hydrophilic colloid medium in the form of oily droplets. The average diameter of these droplets may be between 0.01 and 20 microns, preferably between 0.05 and 5 microns.
  • It is also possible to disperse the polymers in the aqueous colloid compositions from solutions in* low-boiling water-immiscible solvents and removing the solvent during or after dispersing by evaporation, if necessary under reduced pressure.
  • The radiation sensitive resist-forming layer used according to the present invention may comprise, in addition to the binder and radiation sensitive polymer, compounds increasing the sensitivity e.g. Michler's ketone and analogous aromatic ketones which increase the spectral response especially in the range of 270 to 380 µm.
  • The layer may also comprise so-called "filler"-compounds that are non light-sensitive and do not crosslink with the hydrophilic binder. Such filler compounds are e.g. co(ethylene glycol isophthalate/isopropylene glycol isophthalate 50:50), co(vinyl chloride/vinyl acetate/maleic acid anhydride), co(vinyl acetate/vinyl chloride), co(vinyl chloride/vinyl acetate/maleic acid), polyvinyl-n-butyral, polyisobutyl methacrylate, polystyrene, polymethyl methacrylate, cellulose acetate butyrate, co(styrene/butadiene), and an epoxy resin of bisphenol A and epichlorohydrin, marketed by Ciba-Geigy, Basel, Switzerland under the trademark of ARALDITE GY 250 being preferred.
  • The layer may also contain antioxidizing agents, coating aids and dyes.
  • In order to render visible the differentiation in diffusibility for an etchant of the radiation-sensitive layer after exposure it is possible to incorporate in the layer all sorts of radiation-sensitive compounds which change colour or produce a colour upon exposure. For this purpose it is preferred to use polymers which are homopolymers or copolymers derived from monomers corresponding to the general formula given hereinbefore and which form coloured degradation products upon exposure to active radiation. An example of such polymer is the polymer of preparation 4 hereinbefore.
  • Rendering visible the exposure makes possible sensitometric evaluation and follow up of the subsequent etching. Moreover, by producing a colour during exposure, the amount of light transmitted through the layer is reduced and this consequently decreases the sensitivity and gradation of the said layer, which is favourable for continuous-tone reproduction.
  • The resist-forming radiation-sensitive layer can be applied to any support known in the art. Metal supports or supports coated with metals such as for example zinc, and especially aluminium are excellently suited as base materials for planographic printing plates. For the production of a planographic printing plate there may be likewise used specially treated sheets of paper or polymeric film supports coated with a metallic layer. For use in the production of intaglio or relief printing plates metal supports suitable for etching are used e.g. metal plates or cylinders of zinc, copper, steel or an etchable magnesium alloy. For use in the production of printed circuits the photoresist composition is applied e.g. to a supported copper layer, which can be easily etched.
  • The present radiation-sensitive layers can likewise be used in the production of microimages. For that purpose the photoresist coatings are applied to a relatively thin highly opaque black or grey metal coating that can be etched. Suitable metal coatings are made of tellurium or a tellurium alloy having a thickness in the range of 50 nm to 500 nm or bismuth coatings having a thickness in the range of 25 nm to 300 nm.
  • According to one embodiment in the composition of the metal layer to be etched tellurium alloys comprising at least 50 atomic percent of tellurium are used. Typical tellurium compositions, which are etchable with an opaque hypochlorite solution are described in US Patent Specifications 3,271,591 and 3,530,441 of Stanford R. Ovshinsky issued respectively September 6, 1966 and September 22, 1970.
  • According to another embodiment the metal layer to be etched consists of bismuth. Bismuth possesses the advantage of directly adhering to organic resin supports such as a polyethylene terephthalate support when deposited thereon from bismuth vapour under reduced pressure conditions.
  • Vapour deposition techniques are sufficiently known to those skilled in the art of preparing photoconductive selenium coatings (see e.g. US Patent Specifications 3,874,917 of Charles Wood, John C. Schottmiller and Francis W. Ryan issued April 1, 1975 and 3,884,688 of John C. Schottmiller, Francis W. Ryan and Charles Wood issued May 20, 1975).
  • For the etching of the bismuth layer preference is given to aqueous acidic iron(III) chloride solution. The concentration of iron(III) chloride is e.g. in the range of 5 to 20% by weight. Said solution contains preferably from 0.25 to 1% by weight of citric acid.
  • A likewise useful etching solution for the removal of bismuth is an aqueous solution containing 3 to 6% by weight of hydrogen peroxide and 5 to 10% by weight of sulphuric acid.
  • The radiation-sensitive layers according to the invention can be applied to the surfaces to be modified by any known coating technique e.g. by spin-coating, whirl coating, spraying, dip-coating, roller coating, air-knife coating and doctor-blade coating.
  • Instead of applying the radiation-sensitive layer directly to the surface to be modified they can be provided on a temporary support from which they can be stripped off if necessary by means of a stripping layer before or after exposure, and transferred to the surface to be etched. Preferred temporary supports are transparent film supports which permit exposure through the support. Examples of such transparent supports are cellulose nitrate film, cellulose ester film, polyvinyl acetal film, polystyrene film, polyethylene terephthalate film and related films of resinous materials. Other suitable temporary supports are paper and paper which has been coated with a-olefin polymers, e.g. polyethylene, polypropylene and polyisobutylene-polyethylene mixtures.
  • It is possible to provide an antihalation layer between the radiation-sensitive layer and the temporary support e.g. between the stripping layer and the support or between the radiation-sensitive layer and the stripping layer. It is also possible to provide the antihalation layer on the side of the transparent support opposite to that carrying the radiation-sensitive layer.
  • The exposure of the radiation-sensitive resist forming layer preferably occurs by means of UV- radiation sources e.g. carbon arcs and mercury vapour lamps. Exposure may occur through a contacted transparent master pattern or by a projection exposure.
  • The following examples illustrate the present invention.
  • Example 1
  • An aqueous phase containing 60 g of gelatine, 340 g of water, 40 g of a 5% aqueous solution of the sodium salt of diisooctyl sulphosuccinate was prepared as follows: gelatin was allowed to swell for 1 h in water and then heated to 50°C, whereupon the other ingredients of the aqueous phase were added.
  • Next, an organic phase was prepared by dissolving 30 g of tricresyl phosphate, 3 g of Michier's ketone and 20 g of co(ethylene glycol isophthalate/isopropylene glycol isophthalate) (50:50) in 90 g of ethyl acetate and 90 g of m-xylene and then dissolving therein 40 g of the polymer of preparation 4.
  • The organic phase was emulsified in the aqueous phase by means of an homogenizer. Then 760 ml of water and 12.5 g of aqueous formaldehyde (4% by weight) were added to obtain the desired viscosity.
  • The emulsion was dip-coated on a polyethylene terephthalate support and dried. The thickness of the coated layer varied from 5 to 10 µm.
  • Preparation of the coating composition and coating occurred under darkroom illumination. The image-wise exposure was performed in contact in a vacuum frame in two stages. An exposure was carried out through a gravure screen of 65 lines per cm, in which the ratio of the dark lines to the transparent parts was 1:2.5.
  • Another exposure occurred through a continuous tone positive. The light source used was a mercury vapour lamp. The time ratio between the continuous tone exposure and the screen exposure was 0.66:1.
  • After the exposure, the etch-resist layer showing a brown negative image was transferred by pressure to a wet copper surface. The polyethylene terephthalate support was stripped off and the etch-resist was dried in the air.
  • The parts of the copper surface that were not covered by etch resist were coated with an asphalt derivative. The etching was performed with an iron(lll) chloride solution of 39-43° Baume for about 15 min.
  • The etching was stopped by abundantly rinsing with hot water. The etch-resist was rubbed off easily. The resulting etch depths reached 3 to 45 ,um. No undercutting was observed.
  • Example 2
  • Example 1 was repeated with the difference that the aqueous phase contained:
    Figure imgb0011
    Figure imgb0012
  • The organic phase was dispersed in the aqueous phase and after dilution as in example 1 coated on a polyethylene terephthalate support.
  • Exposure, transfer and etching occurred as described in Example 1.

Claims (10)

1. Process of image-wise modifying the surface of an etchable support or an etchable layer on a support by making an etchant diffuse image-wise through an etch-resist layer applied to said etchable support or layer, the said etch-resist having been formed by image-wise exposure to actinic radiation of a radiation-sensitive hydrophilic colloid layer, whereby the permeability of the said hydrophilic colloid layer to an etchant is reduced in conformity with the image-wise exposure, characterized in that said hydrophilic colloid layer contains,, in the absence of any ethylenically unsaturated photopolymerisable monomeric material, a dispersed phase of at least one radiation-sensitive polymer, the said radiation-sensitive polymer being a homopolymer or copolymer derived from a monomer corresponding to the formula:
Figure imgb0013
wherein:
one of M' and M2 is or comprises an ethylenically unsaturated group, and the other is an aliphatic, aromatic or heterocyclic group, including substituted aliphatic, aromatic or heterocyclic groups, and
R represents hydrogen, alkyl including substituted alkyl, or aryl including substituted aryl.
2. Process according to claim 1, wherein the radiation-sensitive polymer comprises recurring units corresponding to one of the following formulae I and II:
Figure imgb0014
wherein:
R1 is hydrogen or C1-C5-alkyl,
R2 represents hydrogen, alkyl including substituted alkyl or aryl including substituted aryl, and
R3 represents alkyl including substituted alkyl or aryl including substituted aryl,
X represents -NH- or -0-,
R4 is an aliphatic, aromatic or heterocyclic group.
3. Process according to any of claims 1 or 2, wherein the polymer is a copolymer comprising from 5 to 50 mole% recurring units with oxime ester groups in the side chain.
4. Process according to any of claims 1 to 3, wherein the polymer is a copolymer comprising recurring alkyl(meth)acrylate units.
5. Process according to any of the preceding claims, wherein the ratio of hydrophilic colloid to radiation-sensitive polymer is between 20:1 and 1:1.
6. Process according to any of the preceding claims, wherein the etch-resist forming layer is applied to the surface to be modified after exposure of the said layer carried by a temporary support which is stripped off after transfer of the layer to the said surface to be modified.
7. A radiation-sensitive material comprising a support and a hydrophilic colloid layer, characterised in that the hydrophilic colloid layer contains, in the absence of any ethylenically unsaturated photopolymerisable monomeric material, a dispersed phase of at least one radiation sensitive polymer, the said polymer being capable by exposure to actinic radiation of reducing the permeability of the hydrophilic colloid layer to an etchant and being a homopolymer or copolymer derived from a monomer corresponding to the formula:
Figure imgb0015
wherein:
one of M' and M2 is or comprises an ethylenically unsaturated group, and the other is an aliphatic, aromatic or heterocyclic group, including substituted aliphatic, aromatic or heterocyclic groups, and
R represents hydrogen, alkyl including substituted alkyl, or aryl including substituted aryl.
8. Material according to claim 7, wherein the polymer is a copolymer comprising from 5 to 50 mole% recurring units with oxime-ester groups in the side chain..
9. Material according to claim 7 or 8, wherein the polymer is a copolymer comprising recurring alkyl(meth)acrylate units.
10. Material according to any of the preceding claims 7 to 9, wherein the ratio of hydrophilic colloid to radiation-sensitive polymer is comprised between 20:1 and 1:1.
EP78200022A 1977-06-01 1978-06-01 Process for image-wise modifying the surface of an etchable support and material suitable therefor comprising a colloid layer containing polymers with oxime-ester groups Expired EP0000082B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB2320377 1977-06-01
GB2320377 1977-06-01

Publications (2)

Publication Number Publication Date
EP0000082A1 EP0000082A1 (en) 1978-12-20
EP0000082B1 true EP0000082B1 (en) 1982-07-21

Family

ID=10191830

Family Applications (1)

Application Number Title Priority Date Filing Date
EP78200022A Expired EP0000082B1 (en) 1977-06-01 1978-06-01 Process for image-wise modifying the surface of an etchable support and material suitable therefor comprising a colloid layer containing polymers with oxime-ester groups

Country Status (5)

Country Link
US (1) US4202697A (en)
EP (1) EP0000082B1 (en)
JP (1) JPS53149330A (en)
DE (1) DE2861959D1 (en)
FR (1) FR2393345A1 (en)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5011626A (en) * 1988-06-13 1991-04-30 Rolls-Royce Inc. Barrier materials for laser drilling
SG77689A1 (en) * 1998-06-26 2001-01-16 Ciba Sc Holding Ag New o-acyloxime photoinitiators
WO2000052530A1 (en) 1999-03-03 2000-09-08 Ciba Specialty Chemicals Holding Inc. Oxime derivatives and the use thereof as photoinitiators
NL1016815C2 (en) * 1999-12-15 2002-05-14 Ciba Sc Holding Ag Oximester photo initiators.
SG97168A1 (en) 1999-12-15 2003-07-18 Ciba Sc Holding Ag Photosensitive resin composition
US6783914B1 (en) 2000-02-25 2004-08-31 Massachusetts Institute Of Technology Encapsulated inorganic resists
JP3860170B2 (en) * 2001-06-11 2006-12-20 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド Photoinitiators of oxime esters with combined structures
CN1720245B (en) * 2002-12-03 2010-05-26 西巴特殊化学品控股有限公司 Oxime ester photoinitiators with heteroaromatic groups
ATE381540T1 (en) * 2004-08-18 2008-01-15 Ciba Sc Holding Ag OXIMESTHER PHOTO INITIATORS
EP1780209B1 (en) * 2004-08-20 2010-03-10 Adeka Corporation Oxime ester compound and photopolymerization initiator containing such compound
KR100763744B1 (en) * 2005-11-07 2007-10-04 주식회사 엘지화학 Triazine based photoactive compound comprising oxime ester
ATE496027T1 (en) * 2005-12-01 2011-02-15 Basf Se OXIMESTER PHOTO INITIATORS
KR100814231B1 (en) * 2005-12-01 2008-03-17 주식회사 엘지화학 Transparent photosensitive composition comprising triazine based photoactive compound comprising oxime ester
CN102199119B (en) * 2005-12-20 2014-07-16 西巴控股有限公司 Oxime ester photoinitiators
US8524425B2 (en) * 2007-05-11 2013-09-03 Basf Se Oxime ester photoinitiators
US8911921B2 (en) * 2007-05-11 2014-12-16 Ciba Corporation Oxime ester photoinitiators
JP5535065B2 (en) * 2007-05-11 2014-07-02 ビーエーエスエフ ソシエタス・ヨーロピア Oxime ester photoinitiator
KR101007440B1 (en) * 2007-07-18 2011-01-12 주식회사 엘지화학 Dendritic photoactive compound comprising oxime ester and method for preparing the same
JP5566378B2 (en) 2008-06-06 2014-08-06 ビーエーエスエフ ソシエタス・ヨーロピア Oxime ester photoinitiator
GB0823025D0 (en) * 2008-12-18 2009-01-28 Eastman Kodak Co Method of making a planographic printing plate
JP4344400B1 (en) * 2009-02-16 2009-10-14 株式会社日本化学工業所 Oxime ester compounds and photosensitive resin compositions using them
US20120207935A1 (en) 2011-02-14 2012-08-16 Deepak Shukla Photocurable inks and methods of use
US8816211B2 (en) 2011-02-14 2014-08-26 Eastman Kodak Company Articles with photocurable and photocured compositions
US20120208914A1 (en) 2011-02-14 2012-08-16 Deepak Shukla Photoinitiator compositions and uses
KR20180091232A (en) 2017-02-06 2018-08-16 동우 화인켐 주식회사 Oxime ester compound and a photocurable composition comprising the same
KR20180099105A (en) 2017-02-28 2018-09-05 동우 화인켐 주식회사 Oxime ester compound and a photocurable composition comprising the same
US10976483B2 (en) * 2019-02-26 2021-04-13 Facebook Technologies, Llc Variable-etch-depth gratings

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3074869A (en) * 1960-12-23 1963-01-22 Minnesota Mining & Mfg Photo-sensitive compositions and articles therefrom
US3255002A (en) * 1961-03-09 1966-06-07 Polaroid Corp Color photographic process and product
US3306744A (en) * 1962-12-17 1967-02-28 Polaroid Corp Copying process using dithioxamides, heavy metal salts and photopolymerizable monomers and photocross linkable polymers
GB1141925A (en) * 1965-07-02 1969-02-05 Horizons Inc Photography
GB1230771A (en) * 1967-03-31 1971-05-05
GB1180845A (en) * 1967-08-08 1970-02-11 Agfa Gevaert Nv Light-Sensitive Polymers and their use in the preparation of Photographic Printing Plates
GB1180846A (en) * 1967-08-08 1970-02-11 Agfa Gevaert Nv Photopolymerisation of Ethylenically Unsaturated Organic Compounds
US3558831A (en) * 1968-04-18 1971-01-26 Bell Telephone Labor Inc Telephone set base structure with exterior plug cavities in the base bottom secured by a detachable baseplate
GB1264308A (en) * 1968-06-17 1972-02-23
BE754916A (en) * 1969-11-11 1971-02-17 Agfa Gevaert Nv PHOTOPOLYMERIZATION OF ETHYLENIC UNSATURATED ORGANIC COMPOUNDS
US3718473A (en) * 1971-01-27 1973-02-27 Du Pont Photopolymerizable elements containing hydro philic colloids and polymerizable monomers for making gravure printing plate resists

Also Published As

Publication number Publication date
US4202697A (en) 1980-05-13
JPS53149330A (en) 1978-12-26
FR2393345A1 (en) 1978-12-29
FR2393345B1 (en) 1980-04-25
DE2861959D1 (en) 1982-09-09
EP0000082A1 (en) 1978-12-20

Similar Documents

Publication Publication Date Title
EP0000082B1 (en) Process for image-wise modifying the surface of an etchable support and material suitable therefor comprising a colloid layer containing polymers with oxime-ester groups
EP0014012B1 (en) Photosensitive composition containing an ethylenically unsaturated compound, initiator and sensitizer
US4255513A (en) Photopolymerizable recording materials
US3574617A (en) Novel photosensitive coating systems
US3759711A (en) Er compositions and elements nitrogen linked apperding quinone diazide light sensitive vinyl polym
US5455143A (en) Aminoketone sensitizers for aqueous soluble photopolymer compositions
US3901710A (en) Photographic material comprising a light-sensitive 1,4-dihydropyridine derivative
US4268667A (en) Derivatives of aryl ketones based on 9,10-dihydro-9,10-ethanoanthracene and p-dialkyl-aminoaryl aldehydes as visible sensitizers for photopolymerizable compositions
US4780393A (en) Photopolymerizable composition and photopolymerizable recording material containing same
US4243741A (en) Negative tonable systems containing dihydropyridines and photooxidants
JPH0653734B2 (en) Photosensitive mixture containing photosensitive compound having trichloromethyl group
DE3332640A1 (en) PRESENSITIZED PRINTING PLATE AND THEIR USE FOR THE PRODUCTION OF FLAT PRINTING FORMS
US3575925A (en) Photosensitive coating systems
US4940647A (en) Photopolymerizable compositions a leuco dye and a leuco dye stabilizer
JPH10500169A (en) Vinylbenzyl thymine monomers and polymers and products made therefrom
US4271260A (en) Positive nonsilver washout systems containing dihydropyridines and photooxidants
US3278304A (en) Photopolymerization of ethylenically unsaturated organic compositions
US3795640A (en) Furfuryl,allyl and methylol acrylamide esters of polymeric acids
US3881935A (en) Photosensitive polymer composition
US4737445A (en) Photopolymerizable composition and photopolymerizable recording material containing said composition
EP0036221B1 (en) Photosensitive material and a process for reproducing photo-information
US4618566A (en) Fluorene containing compounds and negative photoresist compositions therefrom
GB1584009A (en) Radiation-sensitive copolymer
US4663412A (en) Fluorene containing compounds and negative photoresist compositions therefrom
JPS59818B2 (en) Photosensitive resin composition

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): BE DE GB

Designated state(s): BE DE GB

17P Request for examination filed
GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): BE DE GB

REF Corresponds to:

Ref document number: 2861959

Country of ref document: DE

Date of ref document: 19820909

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: BE

Effective date: 19830601

GBPC Gb: european patent ceased through non-payment of renewal fee
PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: DE

Effective date: 19840301

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: GB

Effective date: 19881117

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT