EP0075709A2 - Spectrometer for detecting secondary electrons produced by an electron probe from a target - Google Patents
Spectrometer for detecting secondary electrons produced by an electron probe from a target Download PDFInfo
- Publication number
- EP0075709A2 EP0075709A2 EP82107490A EP82107490A EP0075709A2 EP 0075709 A2 EP0075709 A2 EP 0075709A2 EP 82107490 A EP82107490 A EP 82107490A EP 82107490 A EP82107490 A EP 82107490A EP 0075709 A2 EP0075709 A2 EP 0075709A2
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- EP
- European Patent Office
- Prior art keywords
- secondary electrons
- spectrometer
- sample
- electron spectrometer
- secondary electron
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/08—Electron sources, e.g. for generating photo-electrons, secondary electrons or Auger electrons
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/44—Energy spectrometers, e.g. alpha-, beta-spectrometers
Definitions
- the invention relates to an improved secondary electron spectrometer according to the preamble of claim 1.
- the potential measurement on a sample with an electron probe requires a spectrometer, which is used to measure the secondary electron energy.
- the spectrometer arrangement previously used is described in the literature (H.P. Feuerbaum, "VLSI Testing Using The Electron Probe", SEM / 1979, SEM Inc.AMF O'HARE IL 60666, 285-296).
- the secondary electrons released on the sample pass through a suction field and are then braked in a homogeneous opposing field.
- This known counterfield spectrometer delivers an integral energy distribution.
- the angular distribution of the secondary electrons is not taken into account.
- this angular distribution can be changed by electrostatic micro-fields on the sample surface, i.e. If the potential at the measuring point changes, so does the local microfield on the sample surface and thus also the angular distribution of the secondary electrons. Since the secondary electron spectrometer does not see the change in the angular distribution of the secondary electrons, measurement errors of approximately 5-10% occur in the known arrangement.
- the present invention is based on the object of specifying a secondary electron spectrometer of the type mentioned at the outset which is improved in terms of measuring accuracy.
- the measuring sensitivity is also improved with a secondary electron spectrometer arrangement according to the invention.
- the figure shows a secondary electron spectrometer arrangement according to the invention.
- the secondary electron spectrometer shown in the figure and designed according to the invention takes into account the angular distribution of the secondary electrons.
- the improvement according to the invention can be carried out on a secondary electron spectrometer of an electron beam measuring device, as described in the above-mentioned publication by HB Feuerbaum.
- the secondary electrons are extracted from a suction field A1 having a high field strength of. aspirated the sample PR.
- This suction field A1 is located between the grid G1 and the sample PR.
- the measuring points on the sample PR are usually in the non-activated state at the potential 0, while, as is also known from the cited literature reference, the grid G1 is at a high potential, e.g. B. 600 V.
- the secondary electrons After passing through the suction field A1, the secondary electrons pass through a braking opposing field BF between the two gates G1 and G2.
- the grid G2 is again at approximately the same potential as the measuring points on the sample PR in the non-activated state.
- the braking opposing field BF between the grids G1 and G2 is such that it only cancels the previous acceleration of the suction field A1. All secondary electrons SE can thus pass through the grid G2 and then have an angular distribution which is identical to the angular distribution of the secondary electrons SE on the sample surface.
- the energy distribution of the secondary electrons SE can then be error-free with a spherically symmetrical (isotropic) arrangement G3, i. H. can be measured taking into account the angular distribution.
- the spherically symmetrical grating G3 is approximately at -7 V.
- the secondary electrons SE in the suction field A2 are then accelerated to the detector via a further grating arrangement G4.
- the grid arrangement G4 is operated at approximately the same voltage as in the secondary electron spectrometer described in the cited reference.
- the secondary electron spectrometer is also provided with an AB shield.
- the primary electron beam PE impinges on the sample PR and generates secondary electrons SE with a certain angular distribution that depends on the potential at the measuring point on the sample surface.
- Equipotential lines AL within the secondary electron spectrometer arrangement are shown in dotted lines.
- the invention is particularly suitable for quantitative potential measurement on integrated circuits with an electron probe.
- Essential to the invention is first in the embodiment of the invention shown in the figure, the projection of the angular distribution of the secondary electrons SE present on the sample surface, which depends on the potential of the measuring point on the sample surface, onto the plane of the grid G2, the secondary electrons SE essentially the same three-dimensional impulse ver have division as at the measuring point on the sample surface at the time of generation of the secondary electrons SE by the primary electron beam PE. It is also essential for the invention that the secondary electrons SE are accelerated with this three-dimensional pulse distribution after passing through the grating G2 so that a change in the angular distribution due to a change in potential at the measuring point on the sample surface does not falsify the measurement of the energy distribution of the secondary electrons SE in the detector .
- the secondary electrons SE are braked only as a function of their energy, regardless of their direction of speed.
- the voltage of approximately -7 V: the spherically symmetrical, isotropic grating G3 is selected such that at a voltage Vp of the measuring points (conductor tracks) on the sample PR, these measuring points are in the activated state of approximately 8 V (measuring points in the non-activated state) secondary electrons SE coming from such activated measuring points at potential 0), regardless of their direction of speed, can just reach the suction field A2 and then finally via a further grid arrangement G4 to the detector.
- Every secondary electron spectrometer which determines the energy distribution of the secondary electrons SE independently of the angular distribution of these secondary electrons SE on the sample surface is included in this invention.
- the effects of the grids G1, G2, G3 can also be achieved by only two grids shaped in a certain way, the first grille being designed as a suction grille and the second grille as a brake grille.
Abstract
Bei einem Sekundärelektronen-Spektrometer für die Potentialmessung an einer Probe mit einer Elektronensonde soll die Meßgenauigkeit verbessert werden. Erfindungsgemäß wird ein Sekundärelektronen-Spektrometer mit einer Vorrichtung (G3) zur Messung der Energieverteilung der Sekundärelektronen (SE) unabhängig von der Winkelverteilung dieser Sekundärelektronen (SE) am Meßpunkt auf der Probe (PR) versehen. Weist ein Sekundärelektronen-Spektrometer eine Absaugelektrode (G1) und eine Bremselektrode (G2) auf, so ist die Vorrichtung (G3) kugelsymmetrisch ausgestaltet. Die Erfindung eignet sich insbesondere für die quantitative Potentialmessung an integrierten Schaltungen mit einer Elektronensonde.In the case of a secondary electron spectrometer for the potential measurement on a sample with an electron probe, the measurement accuracy is to be improved. According to the invention, a secondary electron spectrometer is provided with a device (G3) for measuring the energy distribution of the secondary electrons (SE) regardless of the angular distribution of these secondary electrons (SE) at the measuring point on the sample (PR). If a secondary electron spectrometer has a suction electrode (G1) and a brake electrode (G2), the device (G3) is designed spherically symmetrical. The invention is particularly suitable for quantitative potential measurement on integrated circuits with an electron probe.
Description
Die Erfindung betrifft ein verbessertes Sekundärelektronen-Spektrometer nach dem Oberbegriff des Anspruchs 1.The invention relates to an improved secondary electron spectrometer according to the preamble of
Die Potentialmessung an einer Probe mit einer Elektronensonde erfordert ein Spektrometer, das zur Messung der Sekundärelektronen-Energie verwendet wird.The potential measurement on a sample with an electron probe requires a spectrometer, which is used to measure the secondary electron energy.
Die bisher verwendete Spektrometeranordnung ist in der Literatur beschrieben (H.P. Feuerbaum, "VLSI Testing Using The Electron Probe", SEM/1979, SEM Inc. AMF O'HARE IL 60666, 285 - 296). Die an der Probe ausgelösten Sekundärelektronen durchlaufen dabei ein Absaugfeld und werden anschließend in einem homogenen Gegenfeld gebremst. Dieses bekannte Gegenfeldspektrometer liefert eine integrale Energieverteilung. Dabei wird jedoch die Winkelverteilung der Sekundärelektronen nicht berücksichtigt. Diese Winkelverteilung kann jedoch durch elektrostatische Mikrofelder an der Probenoberfläche verändert werden, d.h. ändert sich das Potential am Meßpunkt, so ändert sich auch das lokale Mikrofeld an der Probenoberfläche und damit auch die Winkelverteilung der Sekundärelektronen. Da das Sekundärelektronen -Spektrometer die Änderung der Winkelverteilung der Sekundärelektronen nicht sieht, treten bei der bekannten Anordnung Meßfehler von ca. 5-10 % auf.The spectrometer arrangement previously used is described in the literature (H.P. Feuerbaum, "VLSI Testing Using The Electron Probe", SEM / 1979, SEM Inc.AMF O'HARE IL 60666, 285-296). The secondary electrons released on the sample pass through a suction field and are then braked in a homogeneous opposing field. This known counterfield spectrometer delivers an integral energy distribution. However, the angular distribution of the secondary electrons is not taken into account. However, this angular distribution can be changed by electrostatic micro-fields on the sample surface, i.e. If the potential at the measuring point changes, so does the local microfield on the sample surface and thus also the angular distribution of the secondary electrons. Since the secondary electron spectrometer does not see the change in the angular distribution of the secondary electrons, measurement errors of approximately 5-10% occur in the known arrangement.
Der vorliegenden Erfindung liegt die Aufgabe zugrunde, ein bezüglich der Meßgenauigkeit verbessertes Sekundärelektronen-Spektrometer der eingangs genannten Art anzugeben.The present invention is based on the object of specifying a secondary electron spectrometer of the type mentioned at the outset which is improved in terms of measuring accuracy.
Diese Aufgabe wird erfindungsgemäß durchein Sekundärelektronen-Spektrometer der eingangs genannten Art gelöst, welches die kennzeichnenden Merkmale des Anspruchs 1 aufweist.This object is achieved according to the invention by a secondary electron spectrometer of the type mentioned at the outset, which has the characterizing features of
Außer einer erhöhten Meßgenauigkeit wird mit einer erffndungsgemäßen Sekundärelektronen-Spektrometeranordnung auch die Meßempfindlichkeit verbessert.In addition to increased measuring accuracy, the measuring sensitivity is also improved with a secondary electron spectrometer arrangement according to the invention.
Ausgestaltungen und Vorteile der Erfindung sind in den Unteransprüchen, der Beschreibung und der Zeichnung dargestellt. ,Embodiments and advantages of the invention are shown in the subclaims, the description and the drawing. ,
Die Figur zeigt eine erfindungsgemäße Sekundärelektronen-Spektrometeranordnung.The figure shows a secondary electron spectrometer arrangement according to the invention.
Das in der Figur gezeigte, erfindungsgemäß konzipierte Sekundärelektronen-Spektrometer.berücksichtigt die Winkelverteilung der Sekundärelektronen.Die erfindungsgemäße Verbesserung kann an einem Sekundärelektronen-Spektrometer eines Elektronenstrahl-Meßgeräts vorgenommen werden, wie es in der genannten Veröffentlichung von H.B. Feuerbaum beschrieben ist. Die Sekundärelektronen werden bei einem erfindungsgemäßen Sekundärelektronen-Spektrometer von einem Absaugfeld A1 hoher Feldstärke von. der Probe PR abgesaugt. Dieses Absaugfeld A1 befindet sich zwischen dem Gitter G1 und der Probe PR. Die Meßpunkte auf der Probe PR befinden sich im nicht aktivierten Zustand üblicherweise auf dem Potential 0, während, wie ebenfalls aus der genannten Literaturstelle bekannt ist, das Gitter G1 auf einem hohen Potential liegt, z. B. 600 V. Nach Durchlaufen des Absaugfeldes A1 durchlaufen die Sekundärelektronen zwischen den beiden Gittem G1 und G2 ein bremsendes Gegenfeld BF. Das Gitter G2 liegt, wie ebenfalls aus der genannten Literaturstelle bekannt ist, wiederum in etwa auf demselben Potential wie die Meßpunkte auf der Probe PR im nicht aktivierten Zustand.The secondary electron spectrometer shown in the figure and designed according to the invention takes into account the angular distribution of the secondary electrons. The improvement according to the invention can be carried out on a secondary electron spectrometer of an electron beam measuring device, as described in the above-mentioned publication by HB Feuerbaum. In a secondary electron spectrometer according to the invention, the secondary electrons are extracted from a suction field A1 having a high field strength of. aspirated the sample PR. This suction field A1 is located between the grid G1 and the sample PR. The measuring points on the sample PR are usually in the non-activated state at the potential 0, while, as is also known from the cited literature reference, the grid G1 is at a high potential, e.g. B. 600 V. After passing through the suction field A1, the secondary electrons pass through a braking opposing field BF between the two gates G1 and G2. As is also known from the cited literature reference, the grid G2 is again at approximately the same potential as the measuring points on the sample PR in the non-activated state.
Das bremsende Gegenfeld BF zwischen den Gittern G1 und G2 ist so beschaffen, daß es nur die vorhergehende Beschleunigung des Absaugfeldes A1 in etwa aufhebt. Alle Sekundärelektronen SE können damit das Gitter G2 durchlaufen und haben dann eine Winkelverteilung, die mit der Winkelverteilung der Sekundärelektronen SE an der Probenoberfläche identisch ist. Die Energieverteilung der Sekundärelektronen SE kann dann mit einer kugelsymmetrischen (isotropen) Anordnung G3 fehlerfrei, d. h. mit Berücksichtigung der Winkelverteilung gemessen werden. Das kugelsymmetrische Gitter G3 liegt bei dem in der Figur gezeigten Ausführungsbeispiel der Erfindung etwa auf -7 V. Über eine weitere Gitteranordnung G4 werden die Sekundärelektronen SE im Absaugfeld A2 sodann zum Detektor beschleunigt. Die Gitteranordnung G4 wird in etwa mit derselben Spannung betrieben wie bei dem in der genannten Literaturstelle beschriebenen Sekundärelektronen-Spektrometer. Das Sekundärelektronen-Spektrometer ist noch mit einer Abschirmung AB versehen. Der Primärelektronenstrahl PE trifft auf die Probe PR auf und erzeugt Sekundärelektronen SE mit einer vom Potential am Meßpunkt auf der Probenoberfläche abhängigen bestimmten Winkelverteilung. Äquipotentiallinien AL innerhalb der Sekundärelektronen-Spektrometeranordnung sind punktiert gezeichnet.The braking opposing field BF between the grids G1 and G2 is such that it only cancels the previous acceleration of the suction field A1. All secondary electrons SE can thus pass through the grid G2 and then have an angular distribution which is identical to the angular distribution of the secondary electrons SE on the sample surface. The energy distribution of the secondary electrons SE can then be error-free with a spherically symmetrical (isotropic) arrangement G3, i. H. can be measured taking into account the angular distribution. In the exemplary embodiment of the invention shown in the figure, the spherically symmetrical grating G3 is approximately at -7 V. The secondary electrons SE in the suction field A2 are then accelerated to the detector via a further grating arrangement G4. The grid arrangement G4 is operated at approximately the same voltage as in the secondary electron spectrometer described in the cited reference. The secondary electron spectrometer is also provided with an AB shield. The primary electron beam PE impinges on the sample PR and generates secondary electrons SE with a certain angular distribution that depends on the potential at the measuring point on the sample surface. Equipotential lines AL within the secondary electron spectrometer arrangement are shown in dotted lines.
Die Erfindung -eignet sich besonders für die quantitative Potentialmessung an integrierten Schaltungen mit einer Elektronensonde.The invention is particularly suitable for quantitative potential measurement on integrated circuits with an electron probe.
Wesentlich für die Erfindung ist zuerst bei dem in der Figur dargestellten Ausführungsbeispiel der Erfindung die Projektion der an der Probenoberfläche vorliegenden Winkelverteilung der Sekundärelektronen SE, welche vom Potential des Meßpunktes an der Probenoberfläche abhängt, auf die Ebene des Gitters G2, wobei die Sekundärelektronen SE im wesentlichen dieselbe dreidimensionale Impulsverteilung aufweisen wie am Meßpunkt auf der Probenoberfläche zur Zeit der Erzeugung der Sekundärelektronen SE durch den Primärelektronenstrahl PE. Ebenso wesentlich für die Erfindung ist, daß die Sekundärelektronen SE mit dieser dreidimensionalen Impulsverteilung nach Durchlaufen des Gitters G2 so beschleunigt werden, daß eine Änderung der Winkelverteilung durch eine Potential- änderung am Meßpunkt auf der Probenoberfläche die Messung der Energieverteilung der Sekundärelektronen SE im Detektor nicht verfälscht. Im Gegenfeld GF zwischen dem Gitter G2 und dem kugelsymmetrischen, isotropen Gitter G3 werden die Sekundärelektronen SE unabhängig von ihrer Geschwindigkeitsrichtung nur in Abhängigkeit von ihrer Energie abgebremst. Die Spannung von etwa -7 V:des kugelsymmetrischen, isotropen Gitters G3 ist so gewählt, daß bei einer Spannung Vp der auf der Probe PR befindlichen Meßpunkte (Leiterbahnen) im-aktivierten Zustand dieser Meßpunkte von etwa 8 V (Meßpunkte im nicht aktivierten Zustand auf dem Potential 0) von solchen aktivierten -Meßpunkten kommende Sekundärelektronen SE unabhängig von ihrer Geschwindigkeitsrichtung gerade noch zum Absaugfeld A2 und sodann über eine weitere Gitteranordnung G4 schließlich zum Detektor gelangen können.Essential to the invention is first in the embodiment of the invention shown in the figure, the projection of the angular distribution of the secondary electrons SE present on the sample surface, which depends on the potential of the measuring point on the sample surface, onto the plane of the grid G2, the secondary electrons SE essentially the same three-dimensional impulse ver have division as at the measuring point on the sample surface at the time of generation of the secondary electrons SE by the primary electron beam PE. It is also essential for the invention that the secondary electrons SE are accelerated with this three-dimensional pulse distribution after passing through the grating G2 so that a change in the angular distribution due to a change in potential at the measuring point on the sample surface does not falsify the measurement of the energy distribution of the secondary electrons SE in the detector . In the opposing field GF between the grid G2 and the spherically symmetrical, isotropic grid G3, the secondary electrons SE are braked only as a function of their energy, regardless of their direction of speed. The voltage of approximately -7 V: the spherically symmetrical, isotropic grating G3 is selected such that at a voltage Vp of the measuring points (conductor tracks) on the sample PR, these measuring points are in the activated state of approximately 8 V (measuring points in the non-activated state) secondary electrons SE coming from such activated measuring points at potential 0), regardless of their direction of speed, can just reach the suction field A2 and then finally via a further grid arrangement G4 to the detector.
Die Erfindung ist-selbstverständlich nicht auf die in der Figur gezeigte Ausführungsanordnung beschränkt. Jedes Sekundärelektronen-Spektrometer, welches die Energieverteilung der Sekundärelektronen SE unabhängig von der Winkelverteilung dieser Sekundärelektrönen SE auf der Probenoberfläche bestimmt, ist von dieser Erfindung eingeschlossen. Beispielsweise können die Wirkungen der Gitter G1, G2, G3 auch durch lediglich zwei in bestimmter Weise geformte Gitter erzielt werden, wobei das erste Gitter als Absauggitter und das zweite Gitter als Bremsgitter ausgestaltet sind.The invention is of course not limited to the embodiment shown in the figure. Every secondary electron spectrometer which determines the energy distribution of the secondary electrons SE independently of the angular distribution of these secondary electrons SE on the sample surface is included in this invention. For example, the effects of the grids G1, G2, G3 can also be achieved by only two grids shaped in a certain way, the first grille being designed as a suction grille and the second grille as a brake grille.
Claims (3)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE3138929 | 1981-09-30 | ||
| DE19813138929 DE3138929A1 (en) | 1981-09-30 | 1981-09-30 | IMPROVED SECONDARY ELECTRON SPECTROMETER FOR POTENTIAL MEASUREMENT ON A SAMPLE WITH AN ELECTRON PROBE |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| EP0075709A2 true EP0075709A2 (en) | 1983-04-06 |
| EP0075709A3 EP0075709A3 (en) | 1983-06-29 |
| EP0075709B1 EP0075709B1 (en) | 1987-04-08 |
Family
ID=6143065
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EP82107490A Expired EP0075709B1 (en) | 1981-09-30 | 1982-08-17 | Spectrometer for detecting secondary electrons produced by an electron probe from a target |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4514682A (en) |
| EP (1) | EP0075709B1 (en) |
| JP (1) | JPS5871542A (en) |
| DE (2) | DE3138929A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0268232A2 (en) * | 1986-11-14 | 1988-05-25 | Shimadzu Corporation | Charged particle analyzer |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59211953A (en) * | 1983-05-17 | 1984-11-30 | Univ Osaka | Secondary electron spectral device |
| GB8327737D0 (en) * | 1983-10-17 | 1983-11-16 | Texas Instruments Ltd | Electron detector |
| DE3638682A1 (en) * | 1986-11-13 | 1988-05-19 | Siemens Ag | SPECTROMETER LENS FOR CARPUSULAR BEAM MEASUREMENT TECHNOLOGY |
| JP2696216B2 (en) * | 1988-01-11 | 1998-01-14 | セイコーインスツルメンツ株式会社 | Ion beam processing equipment |
| JPH03101041A (en) * | 1989-09-14 | 1991-04-25 | Hitachi Ltd | Voltage measuring device by use of electron beam |
| US6359451B1 (en) | 2000-02-11 | 2002-03-19 | Image Graphics Incorporated | System for contactless testing of printed circuit boards |
| AU3354401A (en) | 2000-02-14 | 2001-08-20 | Eco 3 Max Inc. | Process for removing volatile organic compounds from an air stream and apparatustherefor |
| WO2016047538A1 (en) * | 2014-09-24 | 2016-03-31 | 国立研究開発法人物質・材料研究機構 | Energy-discrimination electron detector and scanning electron microscope in which same is used |
| EP3330998B1 (en) * | 2016-01-21 | 2021-10-13 | Japan Synchrotron Radiation Research Institute | Retarding potential type energy analyzer |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3764898A (en) * | 1971-07-28 | 1973-10-09 | Ibm | Methods of testing the continuity of an electrical conductor by use of an electron beam |
| US4169244A (en) * | 1978-02-03 | 1979-09-25 | Plows Graham S | Electron probe testing, analysis and fault diagnosis in electronic circuits |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2946002A (en) * | 1958-02-17 | 1960-07-19 | Kingston Electronic Corp | Signal-pickup test probe |
| US3445708A (en) * | 1967-02-06 | 1969-05-20 | Gen Electric | Electron diffraction unit |
| US3531716A (en) * | 1967-06-16 | 1970-09-29 | Agency Ind Science Techn | Method of testing an electronic device by use of an electron beam |
| US3448377A (en) * | 1967-10-12 | 1969-06-03 | Atomic Energy Commission | Method utilizing an electron beam for nondestructively measuring the dielectric properties of a sample |
| US3549999A (en) * | 1968-06-05 | 1970-12-22 | Gen Electric | Method and apparatus for testing circuits by measuring secondary emission electrons generated by electron beam bombardment of the pulsed circuit |
| DE1946931A1 (en) * | 1969-09-17 | 1971-03-18 | Gen Electric | Method for testing circuits and devices for carrying out the method |
| DE2151167C3 (en) * | 1971-10-14 | 1974-05-09 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Electron beam micro analyzer with Auger electron detection |
| US3796947A (en) * | 1973-02-27 | 1974-03-12 | Bell Telephone Labor Inc | Electron beam testing of film integrated circuits |
| DE2814049A1 (en) * | 1978-03-31 | 1979-10-18 | Siemens Ag | METHOD FOR CONTACTLESS MEASUREMENT OF THE POTENTIAL DEVELOPMENT IN AN ELECTRONIC COMPONENT AND ARRANGEMENT FOR PERFORMING THE METHOD |
| DE2823642A1 (en) * | 1978-05-30 | 1980-01-03 | Siemens Ag | METHOD FOR CONTACTLESS POTENTIAL MEASUREMENT ON AN ELECTRONIC COMPONENT |
| US4179604A (en) * | 1978-09-29 | 1979-12-18 | The United States Of America As Represented By The Secretary Of The Navy | Electron collector for forming low-loss electron images |
| JPS55156867A (en) * | 1979-05-28 | 1980-12-06 | Hitachi Ltd | Potential measuring device |
| US4417203A (en) * | 1981-05-26 | 1983-11-22 | International Business Machines Corporation | System for contactless electrical property testing of multi-layer ceramics |
-
1981
- 1981-09-30 DE DE19813138929 patent/DE3138929A1/en not_active Withdrawn
-
1982
- 1982-07-15 US US06/398,542 patent/US4514682A/en not_active Expired - Fee Related
- 1982-08-17 DE DE8282107490T patent/DE3276035D1/en not_active Expired
- 1982-08-17 EP EP82107490A patent/EP0075709B1/en not_active Expired
- 1982-09-27 JP JP57168239A patent/JPS5871542A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3764898A (en) * | 1971-07-28 | 1973-10-09 | Ibm | Methods of testing the continuity of an electrical conductor by use of an electron beam |
| US4169244A (en) * | 1978-02-03 | 1979-09-25 | Plows Graham S | Electron probe testing, analysis and fault diagnosis in electronic circuits |
Non-Patent Citations (2)
| Title |
|---|
| "Scanning Electron Microscopy", 1971/1, p.285-296 (SEM/nc, AMF O'Hare, USA) * |
| "TECHNISCHES MESSEN TM", 48 Jahrgang 1981, Heft 1, R. Oldenbourg Verlag GmbH, München. P. FAZEKAS: "Elektronenstrahl pruft elektrische Potentiale in integrierten Schaltungen", Seiten 29-35 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0268232A2 (en) * | 1986-11-14 | 1988-05-25 | Shimadzu Corporation | Charged particle analyzer |
| EP0268232A3 (en) * | 1986-11-14 | 1989-10-18 | Shimadzu Corporation | Charged particle analyzer |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6352428B2 (en) | 1988-10-19 |
| DE3138929A1 (en) | 1983-04-14 |
| EP0075709A3 (en) | 1983-06-29 |
| US4514682A (en) | 1985-04-30 |
| JPS5871542A (en) | 1983-04-28 |
| EP0075709B1 (en) | 1987-04-08 |
| DE3276035D1 (en) | 1987-05-14 |
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