EP0327034A3 - Process for the formation of a functional deposited film containing groups ii and vi atoms as the main constituent atoms by microwave plasma chemical vapor deposition process - Google Patents
Process for the formation of a functional deposited film containing groups ii and vi atoms as the main constituent atoms by microwave plasma chemical vapor deposition process Download PDFInfo
- Publication number
- EP0327034A3 EP0327034A3 EP19890101657 EP89101657A EP0327034A3 EP 0327034 A3 EP0327034 A3 EP 0327034A3 EP 19890101657 EP19890101657 EP 19890101657 EP 89101657 A EP89101657 A EP 89101657A EP 0327034 A3 EP0327034 A3 EP 0327034A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- atoms
- film
- deposited film
- forming
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000470 constituent Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 230000015572 biosynthetic process Effects 0.000 title abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 abstract 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 4
- 230000005281 excited state Effects 0.000 abstract 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 3
- 230000004913 activation Effects 0.000 abstract 2
- 125000004429 atom Chemical group 0.000 abstract 2
- 239000007789 gas Substances 0.000 abstract 2
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 125000001183 hydrocarbyl group Chemical group 0.000 abstract 2
- 229910052739 hydrogen Inorganic materials 0.000 abstract 2
- 239000001257 hydrogen Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000002994 raw material Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
- C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/305—Sulfides, selenides, or tellurides
- C23C16/306—AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/045—Electric field
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/064—Gp II-VI compounds
Abstract
RnMm (I)
AaBb (II)
where m represents a positive integer equal to or multiple integer of the valence number for R, n, represents a positive integer equal to or multiple integer of the valence number for M, M represents an element belonging to the group II of the periodical table, R represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group, a re presents a positive integer equal to or multiple integer of the valence number for B, b represents a positive integer equal to or multiple integer of the valence number for A and A represents an element belonging to the group VI of the periodical table, B represents a member selected from hydrogen (H), halogen (X) and hydrocarbon group.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63021800A JPH01198481A (en) | 1988-02-01 | 1988-02-01 | Formation of deposited film by microwave plasma cvd |
JP21800/88 | 1988-02-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0327034A2 EP0327034A2 (en) | 1989-08-09 |
EP0327034A3 true EP0327034A3 (en) | 1990-10-17 |
Family
ID=12065130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP19890101657 Withdrawn EP0327034A3 (en) | 1988-02-01 | 1989-01-31 | Process for the formation of a functional deposited film containing groups ii and vi atoms as the main constituent atoms by microwave plasma chemical vapor deposition process |
Country Status (4)
Country | Link |
---|---|
US (1) | US4908329A (en) |
EP (1) | EP0327034A3 (en) |
JP (1) | JPH01198481A (en) |
CN (1) | CN1016449B (en) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5187115A (en) * | 1977-12-05 | 1993-02-16 | Plasma Physics Corp. | Method of forming semiconducting materials and barriers using a dual enclosure apparatus |
EP0242182B1 (en) * | 1986-04-14 | 1993-06-30 | Canon Kabushiki Kaisha | Process for forming deposited film |
US5010276A (en) * | 1987-10-09 | 1991-04-23 | Canon Kabushiki Kaisha | Microwave plasma CVD apparatus with plasma generating chamber constituting a cylindrical cavity resonator |
US5306660A (en) * | 1991-02-19 | 1994-04-26 | Rockwell International Corporation | Technique for doping mercury cadmium telluride MOCVD grown crystalline materials using free radical transport of elemental indium and apparatus therefor |
US5772759A (en) * | 1992-09-28 | 1998-06-30 | Aixtron Gmbh | Process for producing p-type doped layers, in particular, in II-VI semiconductors |
DE4232504B4 (en) * | 1992-09-28 | 2010-01-21 | Aixtron Gmbh | Process for the preparation of p-doped layers, in particular in II-VI semiconductors |
US5628829A (en) * | 1994-06-03 | 1997-05-13 | Materials Research Corporation | Method and apparatus for low temperature deposition of CVD and PECVD films |
US5975912A (en) * | 1994-06-03 | 1999-11-02 | Materials Research Corporation | Low temperature plasma-enhanced formation of integrated circuits |
US5665640A (en) | 1994-06-03 | 1997-09-09 | Sony Corporation | Method for producing titanium-containing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor |
AU1745695A (en) * | 1994-06-03 | 1996-01-04 | Materials Research Corporation | A method of nitridization of titanium thin films |
US6161500A (en) | 1997-09-30 | 2000-12-19 | Tokyo Electron Limited | Apparatus and method for preventing the premature mixture of reactant gases in CVD and PECVD reactions |
US6173673B1 (en) | 1999-03-31 | 2001-01-16 | Tokyo Electron Limited | Method and apparatus for insulating a high power RF electrode through which plasma discharge gases are injected into a processing chamber |
JP2003124235A (en) * | 2001-10-17 | 2003-04-25 | Sumitomo Electric Ind Ltd | Ii-vi group compound semiconductor, its thermal treatment method and its thermal treatment device |
JPWO2003056622A1 (en) * | 2001-12-26 | 2005-05-12 | 東京エレクトロン株式会社 | Substrate processing method and semiconductor device manufacturing method |
JP2004266075A (en) * | 2003-02-28 | 2004-09-24 | Tokyo Electron Ltd | Substrate processing method |
EP1670049A4 (en) * | 2003-09-17 | 2008-06-04 | Tokyo Electron Ltd | Production of insulating film with low dielectric constant |
DE102010021637A1 (en) * | 2010-05-26 | 2011-12-01 | Bayer Schering Pharma Aktiengesellschaft | Substituted 5-fluoro-1H-pyrazolopyridines and their use |
WO2012130933A1 (en) * | 2011-03-31 | 2012-10-04 | Imec | Method for growing a monocrystalline tin- containing semiconductor material |
JP5993720B2 (en) | 2011-11-30 | 2016-09-14 | キヤノン株式会社 | Electrophotographic photosensitive member, process cartridge, and electrophotographic apparatus |
JP6071439B2 (en) | 2011-11-30 | 2017-02-01 | キヤノン株式会社 | Method for producing phthalocyanine crystal and method for producing electrophotographic photoreceptor |
JP5827612B2 (en) | 2011-11-30 | 2015-12-02 | キヤノン株式会社 | Method for producing gallium phthalocyanine crystal, and method for producing electrophotographic photoreceptor using the method for producing gallium phthalocyanine crystal |
JP2017010009A (en) | 2015-06-24 | 2017-01-12 | キヤノン株式会社 | Electrophotographic photoreceptor, process cartridge, and electrophotographic device |
US10095137B2 (en) | 2016-04-04 | 2018-10-09 | Canon Kabushiki Kaisha | Electrophotographic photosensitive member, method of producing electrophotographic photosensitive member, process cartridge, and electrophotographic image forming apparatus |
PT109387B (en) * | 2016-05-13 | 2021-12-14 | Inst Superior Tecnico | PROCESS AND SYSTEM FOR THE SELECTIVE PRODUCTION OF AUTONOMOUS TWO-DIMENSIONAL NANOSTRUCTURES USING PLASMA TECHNOLOGY |
JP6978858B2 (en) | 2016-06-21 | 2021-12-08 | キヤノン株式会社 | An electrophotographic photosensitive member, a method for manufacturing an electrophotographic photosensitive member, a process cartridge having the electrophotographic photosensitive member, and an electrophotographic apparatus. |
US11320754B2 (en) | 2019-07-25 | 2022-05-03 | Canon Kabushiki Kaisha | Process cartridge and electrophotographic apparatus |
US11573499B2 (en) | 2019-07-25 | 2023-02-07 | Canon Kabushiki Kaisha | Process cartridge and electrophotographic apparatus |
JP7444691B2 (en) | 2020-04-21 | 2024-03-06 | キヤノン株式会社 | Manufacturing method of electrophotographic photoreceptor |
JP2021173806A (en) | 2020-04-21 | 2021-11-01 | キヤノン株式会社 | Electrophotographic photoconductor drum, process cartridge, and electrophotographic image forming apparatus |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3011686A1 (en) * | 1979-03-30 | 1980-10-02 | Tokyo Shibaura Electric Co | DEVICE FOR PLASMA SURFACE TREATMENT OF MATERIALS |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1159012A (en) * | 1980-05-02 | 1983-12-20 | Seitaro Matsuo | Plasma deposition apparatus |
US4421592A (en) * | 1981-05-22 | 1983-12-20 | United Technologies Corporation | Plasma enhanced deposition of semiconductors |
JPS5871369A (en) * | 1981-10-20 | 1983-04-28 | Konishiroku Photo Ind Co Ltd | Producing device for photosensitive body |
JPS59193265A (en) * | 1983-03-14 | 1984-11-01 | Stanley Electric Co Ltd | Plasma cvd apparatus |
JPS6063376A (en) * | 1983-09-14 | 1985-04-11 | Canon Inc | Apparatus for producing deposited film by vapor phase method |
JPS6126774A (en) * | 1984-07-16 | 1986-02-06 | Canon Inc | Apparatus for forming amorphous silicon film |
US4657777A (en) * | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
US4566403A (en) * | 1985-01-30 | 1986-01-28 | Sovonics Solar Systems | Apparatus for microwave glow discharge deposition |
JPS61189629A (en) * | 1985-02-18 | 1986-08-23 | Canon Inc | Formation of deposited film |
JPH0782994B2 (en) * | 1985-02-18 | 1995-09-06 | キヤノン株式会社 | Deposited film formation method |
JPS61202438A (en) * | 1985-03-06 | 1986-09-08 | Ulvac Corp | Glow discharge stabilizing method |
JPH07101751B2 (en) * | 1985-03-28 | 1995-11-01 | キヤノン株式会社 | Photovoltaic device manufacturing method |
JPS61276977A (en) * | 1985-05-30 | 1986-12-06 | Canon Inc | Formation of deposited film |
JPS6277479A (en) * | 1985-09-30 | 1987-04-09 | Shimadzu Corp | Formation of thin film by plasma cvd method |
JPS62116775A (en) * | 1985-11-15 | 1987-05-28 | Canon Inc | Plasma cvd device |
JPH0821542B2 (en) * | 1985-12-24 | 1996-03-04 | キヤノン株式会社 | Manufacturing method of functionally deposited film |
US4673589A (en) * | 1986-02-18 | 1987-06-16 | Amoco Corporation | Photoconducting amorphous carbon |
US4837113A (en) * | 1987-07-16 | 1989-06-06 | Texas Instruments Incorporated | Method for depositing compound from group II-VI |
US4832778A (en) * | 1987-07-16 | 1989-05-23 | Texas Instruments Inc. | Processing apparatus for wafers |
-
1988
- 1988-02-01 JP JP63021800A patent/JPH01198481A/en active Pending
-
1989
- 1989-01-27 US US07/302,243 patent/US4908329A/en not_active Expired - Lifetime
- 1989-01-31 EP EP19890101657 patent/EP0327034A3/en not_active Withdrawn
- 1989-02-01 CN CN89100620A patent/CN1016449B/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3011686A1 (en) * | 1979-03-30 | 1980-10-02 | Tokyo Shibaura Electric Co | DEVICE FOR PLASMA SURFACE TREATMENT OF MATERIALS |
Non-Patent Citations (3)
Title |
---|
JOURNAL OF APPLIED PHYSICS, vol. 62, no. 3, 1st August 1987, pages 1022-1028, American Institute of Physics, New York, US; Y. NAKAYAMA et al.: "A study of initial transient phenomena in the chemical vapor deposition process using silane plasma" * |
PATENT ABSTRACTS OF JAPAN, vol. 11, no. 17 (E-471)[2464], 17th January 1987, page 147 E 471; & JP-A-61 189 649 (CANON INC.) 23-08-1986 * |
PATENT ABSTRACTS OF JAPAN, vol. 8, no. 217 (E-270)[1654], 4th October 1984; & JP-A-59 103 331 (HITACHI SEISAKUSHO K.K.) 14-06-1984 * |
Also Published As
Publication number | Publication date |
---|---|
US4908329A (en) | 1990-03-13 |
CN1038469A (en) | 1990-01-03 |
JPH01198481A (en) | 1989-08-10 |
CN1016449B (en) | 1992-04-29 |
EP0327034A2 (en) | 1989-08-09 |
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