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Publication numberUS20010011857 A1
Publication typeApplication
Application numberUS 09/231,836
Publication dateAug 9, 2001
Filing dateJan 15, 1999
Priority dateOct 5, 1998
Also published asUS6310421
Publication number09231836, 231836, US 2001/0011857 A1, US 2001/011857 A1, US 20010011857 A1, US 20010011857A1, US 2001011857 A1, US 2001011857A1, US-A1-20010011857, US-A1-2001011857, US2001/0011857A1, US2001/011857A1, US20010011857 A1, US20010011857A1, US2001011857 A1, US2001011857A1
InventorsKoji Morishima
Original AssigneeKoji Morishima
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Surface acoustic wave device and method for fabricating the same
US 20010011857 A1
Abstract
A surface acoustic wave device that is small, lightweight and highly reliable, and protects its functional portion. The surface acoustic wave device has surface acoustic wave elements mounted on a circuit substrate. Each surface acoustic wave element includes a frame-like first insulating film furnished to surround functional portions on a chip, and a lid-like second insulating film deposited on the first insulating film so as to cover driving electrodes and surface wave propagation paths of the functional portions, while securing a hollow portion over the functional portions.
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Claims(8)
What is claimed is:
1. A surface acoustic wave device having surface acoustic wave elements mounted on a circuit substrate, each of said surface acoustic wave elements comprising:
a piezoelectric substrate;
a functional portion which is formed on one principal plane of said piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of said piezoelectric substrate;
a frame-like first insulating film furnished on the one principal plane of said piezoelectric substrate so as to surround said functional portion; and
a lid-like second insulating film for covering the driving electrodes and surface wave propagation paths of said functional portion while securing a predetermined space over said functional portion.
2. The surface acoustic wave device according to
claim 1
, wherein surfaces of said surface acoustic wave elements are covered with an insulating resin.
3. A surface acoustic wave device according to
claim 1
, further comprising bump electrodes which are formed on either the one principal plane or other principal plane of said piezoelectric substrate and which constitute external connectors of said surface acoustic wave elements, wherein said surface acoustic wave elements are connected via said bump elements to said circuit substrate in flip-chip bonding fashion.
4. A surface acoustic wave device having surface acoustic wave elements mounted on a circuit substrate, each of said surface acoustic wave elements comprising:
a piezoelectric substrate;
a functional portion which is formed on one principal plane of said piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of said piezoelectric substrate;
bump electrodes which are formed on the one principal plane of said piezoelectric substrate and which constitute external connectors of said functional portion; and
an first insulating film deposited on the one principal plane of said piezoelectric substrate except where there exist at least said functional portion and said bump electrodes;
wherein said bump electrodes of said surface acoustic wave elements are connected to said circuit substrate in flip-chip bonding fashion, with an anisotropic conductor interposed between said bump electrodes and said circuit substrate.
5. The surface acoustic wave device according to
claim 4
, further comprising a second insulating film deposited on said first insulating film so as to secure a predetermined space over said functional portion while covering the driving electrodes and surface wave propagation paths of said functional portion except where there exist at least said bump electrodes.
6. The surface acoustic wave device according to
claim 1
, wherein said first and said second insulating film are composed of photosensitive films and are formed by photolithography.
7. A method for fabricating a surface acoustic wave device, said method comprising the steps of:
forming functional portions of a plurality of surface acoustic wave elements on one principal plane of a piezoelectric substrate, said function portions including driving electrodes for driving surface waves in a predetermined direction over a surface of said piezoelectric substrate;
depositing a first insulating film on the one principal plane of said piezoelectric substrate except where there exist at least said functional portions and electrode pads for use by bump electrodes;
depositing a second insulating film in lid fashion over said functional portions except where there exist at least said electrode pads on said first insulating film so as to secure a predetermined space while covering said driving electrodes and surface wave propagation paths of said functional portions;
furnishing each of said functional portions with said bump electrodes constituting external connectors of said functional portions on the one principal plane of said piezoelectric substrate;
providing a single anisotropic conductor so as to cover the plurality of said functional portions and each of said bump electrodes;
connecting said bump electrodes to said circuit substrate in flip-chip bonding fashion; and
separating said surface acoustic wave elements into individual elements.
8. The method for fabricating a surface acoustic wave device according to
claim 7
, wherein said first and said second insulating film are composed of photosensitive films and are formed by photolithography.
Description
BACKGROUND OF THE INVENTION

[0001] 1. Field of the Invention

[0002] The present invention relates to a surface acoustic wave device used as a high-frequency oscillator in telecommunication equipment as well as to a method for fabricating the device.

[0003] 2. Description of Related Art

[0004]FIG. 10 is a cross-sectional view of a conventional surface acoustic wave device. In FIG. 10, reference numeral 1 denotes a piezoelectric substrate (called the chip hereunder) constituting a surface acoustic wave element. On a principal plane of the chip 1 (upper surface in FIG. 10) are a surface acoustic wave functional portion 1 a and electrode pads (the latter not shown). The functional portion 1 a comprises driving electrodes made of known finger-shaped inter-digital transducers (called IDTs hereunder), and propagation paths for surface waves driven in a predetermined direction on the chip surface. The electrode pads extend from the driving electrodes and serve as external connection terminals of the functional portion 1 a. Reference numeral 12 denotes a package that holds the chip 1, and 12 a and 12 b denote package side walls that surround the chip thereby constituting a chip holder. Part of the side wall 12 a includes a terminal portion 12 c serving as external connectors. Reference numeral 4 denotes wires for electrically connecting the electrode pads of the functional portion 1 a to the terminal portion 12 c.

[0005] Reference numeral 11 denotes a metal cover connected to a sealing portion 12 d placed on the top surface of the package side wall 12 b, whereby the functional portion 1 a of the chip 1 is sealed in an airtight and protected manner. In order to release acoustically both the surface waves driven by the known IDTs and the propagation paths for the waves, the surface acoustic wave device requires that a hollow portion be secured over the surface of the functional portion 1 a and that protective measures be taken to prevent breakdown of the functional portion 1 a.

[0006]FIG. 11 is a cross-sectional view of another conventional surface acoustic wave device disclosed in Japanese Patent Application Laid-open No. (Hei)4-301910. In FIG. 11, those parts with their counterparts already shown in FIG. 10 are given the same reference numerals, and descriptions of such parts are omitted where they are repetitive.

[0007] The device in FIG. 11 has the functional portion 1 a furnished at the bottom of the chip 1, with a hollow portion formed between the functional portion 1 a and the package 12. Bump electrodes 6 connect the functional portion 1 a with the terminal portion 12 c. That is, electrical connections between the portions 1 a and 12 c are secured by connecting the bump electrodes 6, formed on electrode pads not shown, to the terminal portion 12 c. The package side wall 12 a creates a stagger for a portion opposite to the functional portion 1 a and also contributes to providing the hollow portion 9. The setup protects the functional portion 1 a and secures a clearance over its surface. As in the case of the device in FIG. 10, the metal cover 11 on top of the chip 1 seals the opening of the package 12 airtight with the sealing portion 12 d interposed therebetween.

[0008] Conventional surface acoustic wave devices are typically constituted as outlined above. In such devices, the cover 11 made of metal has been used for airtight sealing. When an alternative insulating resin, although less expensive, is used to surround the chip 1 periphery, the resin adheres on the chip 1 and makes it impossible to secure a hollow portion over the surface of the functional portion 1 a. Meanwhile, the use of the metal cover pushed up manufacturing costs of the surface acoustic wave device, a disadvantage that has plagued the prior art.

[0009] It is therefore an object of the present invention to overcome the above and other deficiencies of the prior art and to provide a surface acoustic wave device that is small, lightweight, highly reliable, and is protected against breakdown of its functional portion with a hollow segment secured over the surface of that functional portion.

[0010] It is another object of the present invention to provide a method for fabricating a surface acoustic wave device in ways that are simpler, more efficient, more accurate and less expensive than before.

SUMMARY OF THE INVENTION

[0011] According to a first aspect of the present invention, there is provided a surface acoustic wave device having surface acoustic wave elements mounted on a circuit substrate, each of the surface acoustic wave elements comprises a piezoelectric substrate, a functional portion which is formed on one principal plane of the piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, a frame-like first insulating film furnished on the one principal plane of the piezoelectric substrate so as to surround the functional portion and a lid-like second insulating film for covering the driving electrodes and surface wave propagation paths of the functional portion while securing a predetermined space over the functional portion.

[0012] Here, the surface acoustic wave device may further comprise bump electrodes which are formed on either the one principal plane or other principal plane of the piezoelectric substrate and which constitute external connectors of the surface acoustic wave elements, wherein the surface acoustic wave elements are connected via the bump elements to the circuit substrate in flip-chip bonding fashion.

[0013] According to a second aspect of the present invention, there is provided a surface acoustic wave device having surface acoustic wave elements mounted on a circuit substrate, each of the surface acoustic wave elements comprises a piezoelectric substrate, a functional portion which is formed on one principal plane of the piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, bump electrodes which are formed on the one principal plane of the piezoelectric substrate and which constitute external connectors of the functional portion and an first insulating film deposited on the one principal plane of the piezoelectric substrate except where there exist at least the functional portion and the bump electrodes, wherein the bump electrodes of the surface acoustic wave elements are connected to the circuit substrate in flip-chip bonding fashion, with an anisotropic conductor interposed between the bump electrodes and the circuit substrate.

[0014] Here, the surface acoustic wave device may further comprise a second insulating film deposited on the first insulating film so as to secure a predetermined space over the functional portion while covering the driving electrodes and surface wave propagation paths of the functional portion except where there exist at least the bump electrodes.

[0015] According to a third aspect of the present invention, there is provided a method for fabricating a surface acoustic wave device, the method comprises the steps of forming functional portions of a plurality of surface acoustic wave elements on one principal plane of a piezoelectric substrate, the function portions including driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, depositing a first insulating film on the one principal plane of the piezoelectric substrate except where there exist at least the functional portions and electrode pads for use by bump electrodes, depositing a second insulating film in lid fashion over the functional portions except where there exist at least the electrode pads on the first insulating film so as to secure a predetermined space while covering the driving electrodes and surface wave propagation paths of the functional portions, furnishing each of the functional portions with the bump electrodes constituting external connectors of the functional portions on the one principal plane of the piezoelectric substrate, providing a single anisotropic conductor so as to cover the plurality of the functional portions and each of the bump electrodes, connecting the bump electrodes to the circuit substrate in flip-chip bonding fashion and separating the surface acoustic wave elements into individual elements.

[0016] The above and other objects, effects, features and advantages of the present invention will become more apparent from the following description of the embodiments thereof taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017]FIG. 1 is a cross-sectional view of a surface acoustic wave device according to embodiment 1 of the present invention.

[0018]FIG. 2 is a cross-sectional view of a surface acoustic wave device according to embodiment 2 of the present invention.

[0019]FIGS. 3A to 3F are schematic views showing steps to fabricate a chip for use by a surface acoustic wave device according to embodiment 3 of the present invention.

[0020]FIGS. 4A and 4B are perspective views illustrating respectively typical states of the chips in FIGS. 3D and 3F as they are being fabricated.

[0021]FIG. 5 is a cross-sectional view of a surface acoustic wave device according to embodiment 4 of the present invention.

[0022]FIG. 6 is a cross-sectional view of a surface acoustic wave device according to embodiment 5 of the present invention.

[0023]FIG. 7 is a plan view of a chip 1 used by the embodiment 5 of the present invention.

[0024]FIG. 8 is a cross-sectional view of a surface acoustic wave device according to embodiment 6 of the present invention.

[0025]FIGS. 9A to 9F are schematic views showing steps to fabricate a chip for use by a surface acoustic wave device, the steps constituting a method according to embodiment 7 of the present invention.

[0026]FIG. 10 is a cross-sectional view of a conventional surface acoustic wave device.

[0027]FIG. 11 is a cross-sectional view of another conventional surface acoustic wave device disclosed in Japanese Patent Application Laid-open No. (Hei) 4-301910.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0028] Embodiments of the present invention will be described below with reference to the accompanying drawings. It is noted that the same reference symbols in the drawings denote the same or corresponding components.

[0029] Embodiment 1

[0030] An embodiment 1 of this invention will now be described with reference to FIG. 1. FIG. 1 is a cross-sectional view of a surface acoustic wave device according to embodiment 1.

[0031] In FIG. 1, reference numeral 1 denotes a piezoelectric substrate chip constituting a surface acoustic wave element. On a principal plane of the chip 1 (upper surface in FIG. 1) are a surface acoustic wave functional portion 1 a and electrode pads. The functional portion 1 a comprises driving electrodes made of known IDTs, and propagation paths for surface waves driven in a predetermined direction on the chip surface. The electrode pads, not shown, extend from the driving electrodes and serve as external connection terminals of the functional portion 1 a.

[0032] Reference numeral 3 denotes a circuit substrate on which to mount the chip; 3 c for a terminal portion formed on a part of the circuit substrate 3; 4 for wires that connect the electrode pads of the functional portion 1 a electrically to the terminal portion 3 c; 2 a for a frame-like first insulating film deposited on the upper surface of the chip 1 surrounding the functional portion 1 a on the chip 1; and 2 b for a lid-like second insulating film attached to the first insulating film 2 a in covering relation therewith. The second insulating film 2 b ensures a suitable hollow portion 9 over the functional portion 1 a and protectively envelopes the driving electrodes and surface acoustic wave propagation paths of the functional portion 1 a.

[0033] In the surface acoustic wave device of the above constitution, the crucially important functional portion 1 a is protected by the first and the second insulating film 2 a and 2 b with the hollow portion 9 interposed therebetween. The makeup allows the chip 1 to be fabricated in a secure manner with little risk of getting the functional portion 1 a inadvertently damaged during the process.

[0034] Because the first and the second insulating film 2 a and 2 b seal the functional portion 1 a in a simplified fashion, it is not mandatory, as with conventional surface acoustic wave devices, to provide costly airtight sealing on the functional portion. The result is an inexpensively manufactured surface acoustic wave device.

[0035] Embodiment 2

[0036] An embodiment 2 of the invention will now be described with reference to FIG. 2. FIG. 2 is a cross-sectional view of a surface acoustic wave device according to embodiment 2. In FIG. 2, those parts with their counterparts already shown in FIG. 1 are given the same reference numerals, and descriptions of such parts are omitted where they are repetitive.

[0037] In FIG. 2, reference numeral 5 represents an insulating resin. The chip 1, with its functional portion 1 a capped by the first and the second insulating film 2 a and 2 b, is mounted on the circuit substrate 3. Metal wires 4 are used to connect the functional portion 1 a electrically to the terminal portion 3 c. The insulating resin 5 is deposited so as to cover the chip 1 and metal wires 4. This makeup ensures the same effects as the embodiment 1 and provides a surface acoustic wave device still more reliable than the embodiment 1.

[0038] Embodiment 3

[0039] An embodiment 3 of this invention will now be described with reference to FIGS. 3A to 3F, and FIGS. 4A and 4B. FIGS. 3A to 3F are schematic views showing steps to fabricate a chip for use by a surface acoustic wave device according to the embodiment 3. FIGS. 4A and 4B are perspective views illustrating respectively typical states of the chips in FIGS. 3D and 3F as they are being fabricated.

[0040]FIG. 3A shows a wafer 30. On the wafer 30, a plurality of functional portions 1 a are formed through conductor patterning at suitable intervals as indicated in FIG. 3B.

[0041] A photosensitive film 40 is then deposited on all functional portions 1 a on the wafer 30 as illustrated in FIG. 3C. With the film 40 in place, a frame-like first insulating film 2 a is formed by photolithography so as to surround each functional portion as shown in FIGS. 3D and 4A. FIG. 4A depicts a case in which two functional portions 1 a are surrounded by the first insulating film 2 a.

[0042] Thereafter, a single photosensitive film 50 is deposited on the first insulating film 2 a over the wafer as illustrated in FIG. 3E. The process creates a suitable hollow portion 9 between each functional part 1 a and the photosensitive film 50. With the hollow portions thus provided, a lid-like second insulating film 2 b is formed also by photolithography (as in FIGS. 3D and 4A) to cover each of the first insulating films 2 a as depicted in FIG. 3F and 4B.

[0043] After that, the wafer is diced up along separation lines 60 separating chips as shown in FIGS. 4A and 4B, whereby the individual chips are formed.

[0044] As described, the embodiment 3 of the invention has its first and second insulating films fabricated finely, precisely and efficiently, the films offering the same effects as those of the first and the embodiment 2.

[0045] Embodiment 4

[0046] An embodiment 4 of this invention will now be described with reference to FIG. 5. FIG. 5 is a cross-sectional view of a surface acoustic wave device according to embodiment 4. In FIG. 5, those parts with their counterparts already shown in FIG. 1 are given the same reference numerals, and descriptions of such parts are omitted where they are repetitive.

[0047] In FIG. 5, reference numeral 6 denotes bump electrodes constituting external connectors of the functional portion 1 a. The chip 1, with its functional portion 1 a capped by the first and the second insulating film 2 a and 2 b, is connected by the bump electrodes 6 to suitable connectors 3 c on the circuit substrate 3 in flip-chip bonding fashion.

[0048] The makeup above allows the embodiment 4 to be a smaller surface acoustic wave device than the embodiment 1 while offering the same effects as those of the latter.

[0049] If part or all of the chip is covered with an appropriate insulating resin as is the case with the embodiment 2, the embodiment 4 may be fabricated as a surface acoustic wave device with significantly enhanced reliability.

[0050] Embodiment 5

[0051] An embodiment 5 of this invention will now be described with reference to FIGS. 6 and 7. FIG. 6 is a cross-sectional view of a surface acoustic wave device according to the embodiment 5. FIG. 7 is a plan view of a chip 1 used by the embodiment 5.

[0052] In FIGS. 6 and 7, those parts with their counterparts already shown in FIG. 1 are given the same reference numerals, and descriptions of such parts are omitted where they are repetitive.

[0053] As shown in FIGS. 6 and 7, an insulating film 7 is formed over the chip 1 except where there are at least the functional portion 1 a and the electrode pads 10 constituting external connectors of the functional portion 1 a. The thickness of the insulating film 7 should preferably be made equal to or slightly less than that of the bump electrodes 6 as depicted in FIG. 6.

[0054] The chip 1 is mounted on the bump electrodes 6 so that a hollow portion 9 is secured over its functional portion 1 a as shown in FIG. 6. The chip 1 is then connected to suitable connectors 3 c on the circuit substrate 3 in flip-chip bonding fashion, with an anisotropic conductor 8 interposed between the bump electrodes 6 and the connectors 3 c.

[0055] In the embodiment 5 of the above constitution, the chip 1 is bonded to the circuit substrate 3 not only via the bump electrodes 6 but also through the insulating film 7. This setup prevents junction stress from getting concentrated locally, thereby implementing a surface acoustic wave device with its bump electrodes 6 offering high connection reliability.

[0056] If part or all of the chip is covered with an appropriate insulating resin as is the case with the embodiment 2, the embodiment 5 may also be fabricated as a surface acoustic wave device with significantly enhanced reliability.

[0057] Furthermore, if the insulating film 7 is formed by photolithography using a photosensitive material as with the embodiment 3, the embodiment 5 will have its insulating film 7 fabricated finely, precisely and efficiently.

[0058] Embodiment 6

[0059] An embodiment 6 of this invention will now be described with reference to FIG. 8. FIG. 8 is a cross-sectional view of a surface acoustic wave device according to embodiment 6. In FIG. 8, those parts with their counterparts already shown in FIG. 1 are given the same reference numerals, and descriptions of such parts are omitted where they are repetitive.

[0060] As shown in FIG. 8, a first insulating film 7 a is formed over the chip 1 except where there are at least the functional portion 1 a and bump electrode pads 10. A second insulating film 7 b is deposited on the first insulating film 7 a. The functional portion 1 a of the chip 1 is covered with the first and the second insulating film 7 a and 7 b in such a manner that a hollow portion 9 is secured over the surface of the functional part 1 a. Those parts of the films 7 a and 7 b which correspond to the electrode pads 10 are removed so that the bump electrodes 6 are exposed. The combined thickness of the first and the second insulating film 7 a and 7 b should preferably be made identical to or slightly less than the height of the bump electrodes 6.

[0061] The chip 1 is connected by the bump electrodes 6 to suitable connectors 3 c on the circuit substrate 3 in flip-chip bonding fashion, with the anisotropic conductor 8 interposed between the bump electrodes 6 and the connectors 3 c.

[0062] The embodiment 6 of the above constitution provides the same effects as the embodiment 5. Because the crucially important functional portion 1 a is protected by the first and the second insulating film 7 a and 7 b with the hollow portion interposed therebetween, the above makeup allows the chip 1 to be fabricated in a secure manner with little risk of getting the functional portion 1 a inadvertently damaged during the process.

[0063] Because the first and the second insulating film 7 a and 7 b seal the functional portion 1 a in a simplified fashion, it is not mandatory, as with conventional surface acoustic wave devices, to provide costly airtight sealing on the functional portion. This makes it possible to manufacture an inexpensive yet viable surface acoustic wave device.

[0064] If part or all of the chip is covered with an appropriate insulating resin as is the case with the embodiment 2, the embodiment 6 may also be fabricated as a surface acoustic wave device with significantly enhanced reliability.

[0065] Furthermore, if the first and the second insulating film 7 a and 7 b are formed by photolithography using a photosensitive material as with the embodiment 3, the embodiment 6 will have its first and second insulating films 7 a and 7 b fabricated finely, precisely and efficiently.

[0066] Embodiment 7

[0067] An embodiment 7 of this invention will now be described with reference to FIGS. 9A to 9F. FIGS. 9A to 9F are schematic views showing steps to fabricate a chip for use by a surface acoustic wave device, the steps constituting a method according to embodiment 7.

[0068]FIG. 9A shows a wafer 30. On the wafer 30, a plurality of functional portions 1 a are formed through conductor patterning at suitable intervals as depicted in FIG. 9B.

[0069] A first insulating film 7 a made illustratively of a photosensitive material is then deposited on the wafer surface comprising the functional portions 1 a. The first insulating film 7 a is shaped as shown in FIG. 9C by photolithography, with the functional portions 1 a and electrode pads for bump electrodes excluded.

[0070] In the state above, a second insulating film 7 b composed of a photosensitive material is further deposited on the first insulating film 7 a. A lid covering the functional portions 1 a is formed by similar photolithography. With the electrode pads for bump electrodes excluded, the second insulating film 7 b is then formed as shown in FIG. 9C.

[0071] The bump electrodes 6 corresponding to each of the functional portions are furnished as illustrated in FIG. 9D. At this point, the combined thickness of the first and the second insulating film 7 a and 7 b should preferably be made identical to or slightly less than the height of the bump electrodes 6.

[0072] Thereafter, as shown in FIG. 9E, a single anisotropic conductor 8 is furnished so as to cover all functional portions and their bump electrodes 6, the conductor being in contact with the bump electrodes.

[0073] In this state, the wafer is diced up along separation lines 60 separating chips as shown in FIG. 9F, whereby the individual chips are formed.

[0074] By use of the above method according to embodiment 7, it is possible to fabricate efficiently a surface acoustic wave device offering the same effects as those of the fifth and the embodiment 6.

[0075] The surface acoustic wave device of the present invention has surface acoustic wave elements mounted on a circuit substrate, each of the surface acoustic wave elements comprises a piezoelectric substrate, a functional portion which is formed on a principal plane of the piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, a frame-like first insulating film furnished on the principal plane of the piezoelectric substrate so as to surround the functional portion and a lid-like second insulating film for covering the driving electrodes and surface wave propagation paths of the functional portion while securing a predetermined space over the functional portion. This structure provides a hollow portion over the surface of the functional portions so that the device is fabricated in secure, damage-free fashion.

[0076] In the surface acoustic wave device of the present invention, the surfaces of the surface acoustic wave elements may be covered with an insulating resin. This makes it possible to fabricate a more reliable surface acoustic wave device than before.

[0077] The surface acoustic wave device of the present invention may further comprise bump electrodes which are formed on either one principal plane or another principal plane of the piezoelectric substrate and which constitute external connectors of the surface acoustic wave elements, wherein the surface acoustic wave elements are connected via the bump elements to the circuit substrate in flip-chip bonding fashion. This preferred structure helps reduce the size of the surface acoustic wave device.

[0078] The surface acoustic wave device of the present invention has surface acoustic wave elements mounted on a circuit substrate, each of the surface acoustic wave elements comprises a piezoelectric substrate, a functional portion which is formed on a principal plane of the piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, bump electrodes which are formed on the principal plane of the piezoelectric substrate and which constitute external connectors of the functional portion and an insulating film deposited on the principal plane of the piezoelectric substrate except where there exist at least the functional portion and the bump electrodes, wherein the surface acoustic wave elements are connected via the bump electrodes to the circuit substrate in flip-chip bonding fashion, with an anisotropic conductor interposed between the bump electrodes and the circuit substrate. This structure prevents junction stress from getting concentrated locally on the chip, allowing the bump electrodes to offer high connection reliability.

[0079] The surface acoustic wave device of the present invention has surface acoustic wave elements mounted on a circuit substrate, each of the surface acoustic wave elements comprises a piezoelectric substrate, a functional portion which is formed on a principal plane of the piezoelectric substrate and which has driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, a first insulating film deposited on the principal plane of the piezoelectric substrate except where there exist at least the functional portion and bump electrodes and a second insulating film deposited on the first insulating film so as to secure a predetermined space over the functional portion while covering the driving electrodes and surface wave propagation paths of the functional portion except where there exist at least the bump electrodes, wherein the surface acoustic wave elements are connected via the bump electrodes to the circuit substrate in flip-chip bonding fashion, with an anisotropic conductor interposed between the bump electrodes and the circuit substrate. This structure reinforces protection of the functional portions and eliminates the need for providing their airtight sealing. The resulting device is inexpensive and, with junction stress dispersed over the chip, fabricated in a way that allows its bump electrodes to offer high connection reliability.

[0080] In the surface acoustic wave device of the present invention, the first and the second insulating film of the surface acoustic wave device may be composed of photosensitive films and formed by photolithography. This structure allows the insulating films to be fabricated finely, precisely and efficiently.

[0081] A method for fabricating a surface acoustic wave device of the present invention comprises the steps of forming functional portions of a plurality of surface acoustic wave elements on one principal plane of a piezoelectric substrate, the function portions including driving electrodes for driving surface waves in a predetermined direction over a surface of the piezoelectric substrate, depositing a first insulating film on the principal plane of the piezoelectric substrate except where there exist at least the functional portions and electrode pads for use by bump electrodes, depositing on the first insulating film a second insulating film in lid fashion covering each of the functional portions except each of the electrode pads so as to secure a predetermined space over the functional portions while covering the driving electrodes and surface wave propagation paths of the functional portions, furnishing each of the functional portions with the bump electrodes constituting external connectors of the functional portions on the principal plane of the piezoelectric substrate, providing a single anisotropic conductor so as to cover the plurality of functional portions and each of the bump electrodes, connecting the bump electrodes to the circuit substrate in flip-chip bonding fashion and separating the surface acoustic wave elements into individual elements. This method fabricates the inventive surface acoustic wave device efficiently.

[0082] Preferably, the inventive method may further comprise the steps of having the first and the second insulating film composed of photosensitive films and formed by photolithography. The additional steps make it possible to fabricate the insulating films finely, precisely and efficiently.

[0083] The present invention has been described in detail with respect to various embodiments, and it will now be apparent from the foregoing to those skilled in the art that changes and modifications may be made without departing from the invention in its broader aspects, and it is the invention, therefore, in the appended claims to cover all such changes and modifications as fall within the true spirit of the invention.

[0084] The entire disclosure of Japanese Patent Application No. 10-282814 filed on Oct. 5, 1998 including specification, claims, drawings and summary are incorporated herein by reference in its entirety.

Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US6815313 *Dec 27, 2001Nov 9, 2004Japan Radio Co., Ltd.Electronic component to be mounted on a circuit board having electronic circuit device sealed therein and method of manufacturing the same
US7011986Oct 12, 2004Mar 14, 2006Infineon Technologies AgMethod for manufacturing a housing for a chip with a micromechanical structure
US7261792Dec 5, 2003Aug 28, 2007Murata Manufacturing Co., Ltd.Method of producing piezoelectric component and piezoelectric component
US7288435Aug 18, 2004Oct 30, 2007Infineon Technologies AgMethod for producing a cover, method for producing a packaged device
US7651879Dec 7, 2005Jan 26, 2010Honeywell International Inc.Surface acoustic wave pressure sensors
EP1427032A2 *Dec 5, 2003Jun 9, 2004Murata Manufacturing Co., Ltd.Method of producing a piezoelectric part and piezoelectric part
EP1540736A2 *Jun 9, 2003Jun 15, 2005Silicon Light Machines CorporationWafer-level seal for non-silicon-based devices
WO2003070624A2 *Jan 23, 2003Aug 28, 2003Robert AignerMethod for the production of a cover, method for the production of a cased component
WO2003086956A2 *Mar 17, 2003Oct 23, 2003Infineon Technologies AgMethod for producing a housing for a chip having a micromechanical structure
WO2007067453A2 *Dec 1, 2006Jun 14, 2007Honeywell Int IncSurface acoustic wave pressure sensors
Classifications
U.S. Classification310/313.00R, 310/348, 310/340
International ClassificationH03H9/145, H03H9/05, H03H9/25, H03H3/08
Cooperative ClassificationH03H9/059, H03H9/1092
European ClassificationH03H9/10S4, H03H9/05C2
Legal Events
DateCodeEventDescription
Dec 22, 2009FPExpired due to failure to pay maintenance fee
Effective date: 20091030
Oct 30, 2009LAPSLapse for failure to pay maintenance fees
May 11, 2009REMIMaintenance fee reminder mailed
Apr 6, 2005FPAYFee payment
Year of fee payment: 4
Jan 15, 1999ASAssignment
Owner name: MITSUBISHI DENKI KABUSHIKI KAISHA, JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:MORISHIMA, KOJI;REEL/FRAME:009710/0066
Effective date: 19981226