US 20010015851 A1 Abstract A multilevel diffractive optical element comprising a base and a plurality of phase zones having phase levels of a substantially identical height h, each phase zone being defined by a local modulation depth d and a local number of phase levels ξ=d/h, the local number of phase levels ξ per phase zone being a real number, an integer of which defines the number of complete levels in the phase zone, which complete levels have identical widths, and a fraction of which, in at least one phase zone, defines an incomplete level which is narrower than the complete levels, said local number of phase levels ξ=ξ(x, y) varying among different phase zones so as to provide corresponding variation of said local modulation depth d=d(x, y) whereby local diffraction efficiencies and consequently an overall diffraction efficiency of the optical element is arbitrarily controlled.
Claims(13) 1. A multilevel diffractive optical element comprising a base and a plurality of phase zones, the phase zones being defined by a modulation depth and a number of phase levels, the number of phase levels per phase zone varying at different locations of the element, characterised in that the variation of said number of phase levels is such that the modulation depth, at said different locations, varies in a predetermined manner. 2. A multilevel diffractive optical element according to claim 1 3. A multilevel diffractive optical element according to claim 2 4. A multilevel diffractive optical element according to claim 1 5. A multilevel diffractive optical element according to claim 4 6. A multilevel diffractive optical element according to claim 2 7. A multilevel diffractive optical element according to claim 6 _{opt}/N_{min }has a minimal value, where d_{opt }is an optimal local modulation depth of the phase zone and (i)(1)N_{min }is a minimal local number of levels which the phase zone needs to have in order to achieve a predetermined local diffraction efficiency. 8. A multilevel diffractive optical element according to claim 1 ^{M}. 9. A method for producing a multilevel diffractive optical element having a phase function φ=φ(x,y) and phase zones of different local modulation depth d=d(x,y) defined by different numbers of phase levels per phase zone, the phase levels being of substantially identical height h, said method comprising:
generating a plurality of M binary amplitude masks including the multilevel information, the masks being configured to provide, in each phase zone, its local number of phase levels, the number of masks being defined by an integer N
_{0 }which is at least not less than a maximal number of phase zone levels per phase zone over the optical element, and utilizing the masks' information serially for serial etching of said phase levels into said phase zones of the optical element,
a binary amplitude transmittance of the masks being defined as:
where P is a parameter which is defined by a serial number of a mask and which determines a number of boundaries of phase levels provided in each phase zone by this mask, and d
_{() }is a maximal achievable modulation depth:d _{0} =N _{0} ·h 10. A method for producing a multilevel diffractive optical element according to claim 9 11. A method for producing a multilevel diffractive optical element according to claim 9 ^{M−1 }and the etching depth produced by a mask is twice the etching depth produced by the preceding mask. 12. A method for producing a multilevel diffractive optical element according to claim 9 13. A method for producing a multilevel diffractive optical element according to any one of claims 9 12 calculating, for each phase zone, an optimal local modulation depth, which the phase zone would have, in order to ensure 100% local diffraction efficiency in the m-th diffraction order, if the phase zone profile were continuous rather than multilevel;
assuming that all the phase zones have their optimal local modulation depths and the height of the phase levels in the phase zones is a free parameter, calculating local minimal numbers of phase levels which are required to provide for the desired distribution of the diffraction efficiency;
calculating local heights of the phase levels as an attitude of the optimal local modulation depth of each phase zone to the local minimal number of levels thereof, the local height of a minimal magnitude being chosen as the optimized height of the phase levels.
Description [0001] The present invention relates to a multilevel diffractive optical element (DOE), in particular to a computer generated phase DOE, comprising a substrate with a substantially periodic transmissive or reflective relief pattern of phase retardation zones. [0002] Computer generated DOEs of the above kind are capable of performing complicated phase transformations of a radiation wave incident thereon such as a conversion of incident radiation wavefront having one shape into a wavefront of any other shape. DOEs of the specified kind are usually designed to have a high diffraction efficiency at a predetermined, most often, first diffraction order. [0003] In order lo obtain 100% diffraction efficiencies, DOEs suggested by Jordan et al and known as kinoforms have a periodic blazed surface relief with phase zones having a continuous profile (“Kinoform lenses”, Appl. Opt., Aug. 9/8, 1970, pp. 1883-1887). The depth of the phase zones in kinoforms is generally proportional to phase residues after modulo 2π so that, in each phase zone, phase variations range is from 0 to 2π. However, it is practically very difficult to produce high quality kinoforms with properly shaped continuous blazed profile. [0004] It has, therefore, been suggested to quantize the ideal continuous phase profile of the DOEs into discrete phase levels as an approximation to the continuous profile. Manufacturing, of such a multilevel DOE is based on a generation of a plurality of binary amplitude masks and their serial use for serial etching of a plurality of levels over the entire optical element. Thus, for example, a multilevel DOE disclosed in U.S. Pat. No. 4,895,790, is produced by means of M masks in M serial manufacturing cycles so that, at each manufacturing cycle, each previously produced level is divided into two levels of a smaller height. Thereby, in each phase zone of the DOE, there are produced N=2 [0005] To provide for an independent control of an amplitude of diffracted wavefront, in a binary DOE, Brown, B. R. and Lohmann, A. W. have suggested a DOE in which the amplitude of the diffracted wavefront is controlled by an appropriate choice of the ratio between the widths of the levels (Brown, B. R. and Lohmann, A. W., “Complex spatial filtering of binary masks”, Applied Optics, 5, 1996, p.967). However, with the number of phase levels being limited to two, the diffraction efficiency of the DOE cannot exceed 40.5%. [0006] It is the object of the present invention to provide a new computer generated multilevel phase diffractive optical element, in which local diffraction efficiencies and consequently an overall diffraction efficiency can be arbitrarily controlled in the range from 0 to nearly 100% over the entire element. [0007] In the following description and claims the term “profile” used with respect to a multilevel phase zone of a diffractive optical element means a line passing through extremities of phase levels of the phase zone. The term “modulation depth” of a multilevel phase zone means a distance from the uppermost level of the phase zone to a base of the diffractive optical element. The term “optimal modulation depth” with respect to a multilevel phase zone means a modulation depth proportional to phase residues after modulo 2π, which the phase zone would have, in order to ensure 100% diffraction efficiency in an m-th diffraction order, if the phase zone were continuous rather than multilevel. When a multilevel phase zone has such an optimal modulation depth, an angle of inclination of its profile with respect to the base of the diffractive optical element is optimal and a diffraction efficiency provided thereby is nearly 100%. The term “local” with respect to any feature of a diffractive optical element is used to designate a magnitude or value which this feature has at one specific location of the diffractive element. Tius, for example, a local modulation depth of a phase zone is a modulation depth seen in a cross-sectional view of the phase zone taken at one location along the extension thereof. [0008] In accordance with the present invention there is provided a multilevel diffractive optical element comprising a base and a plurality of phase zones defined by a modulation depth and a number of phase levels, the number of the phase levels per phase zone varying at different locations of the element, characterised in that the variation of said number of phase levels is such that the modulation depth, at said different locations, varies in a predetermined manner of the element. [0009] Thus, by the appropriate choice of local modulation depth, according to the present invention, it is ensured that at each location of the diffractive optical element, the phase zone profile is inclined with respect to the base of the element in such a manner that a local amplitude of the diffracted wavefront and, consequently, a local diffraction efficiency obtained from the diffractive optical element, at each said location thereof, have predetermined values. [0010] The required orientation of the phase zone profile may be achieved by pivoting of a profile which forms with the base of the DOE an optimal angle, around its central point or one of its edge points or any other, arbitrarily chosen point. [0011] Thus, by virtue of variation of the modulation depth over the entire element, e.g. from phase zone to phase zone and/or within one phase zone along the direction of the extension thereof, any required distribution of diffraction efficiency of the element can be achieved. Particularly, it can be provided that, at any location of the DOE, a local diffraction efficiency in the desired order is nearly 100%. This will happen in case when, at said location of the element, the local modulation depth is of its optimal magnitude. [0012] The local modulation depth at each location of the element is defined by the local number of phase levels at this location and by the height thereof. Due to the fact that, in practice, it is extremely complicated to form DOEs having variable height of levels, in the DOE according to the present invention the height of phase levels is preferably invariant over the entire element. [0013] In order to determine a specific magnitude of the height of phase levels it should be kept in mind that the less the phase levels height, the greater the number of phase levels which is required for the provision of a desired modulation depth and that, in order to render the manufacturing of the DOE less complicated and to reduce fabrication errors and scatter noise, it is clearly desirable to minimize the number of phase levels and, consequently to choose a maximal possible height thereof. On the other hand, to obtain required diffraction efficiencies, the number of phase levels should not be unduly minimized and therefore, the height of levels must be sufficiently small, being however not less than that dictated by manufacturing constrains. [0014] In view of the above, it is suggested, according to the present invention, that the height of phase levels has an optimized magnitude determined as a height of phase levels of a phase zone in which d [0015] In a preferred embodiment of the present invention, the DOE is adapted for production %—ie the use of M masks in M serial manufacturing cycles, a maximal number of phase levels obtained thereby being 2 [0016] It is the advantage of the present invention that, with the DOE being produced in the above manner, any distribution of the modulation depth and, consequently, any desired distribution of overall diffraction efficiency of the DOE can be achieved. [0017] In accordance with the present invention, there is further provided a method for producing a multilevel diffractive optical element having a phase function φ=φ(x,y) and phase zones of different local modulation depth d=d(x,y) defined by different local number of phase levels, the phase levels being of substantially identical height h, said method comprising: [0018] generating a plurality of M binary amplitude masks including the multilevel information, the masks being configured to provide, in each phase zone, its local number of phase levels, the number of masks being defined by an integer N [0019] utilizing the masks' information serially for serial etching of said phase levels into said phase zones of the optical element, [0020] a binary amplitude transmittance of the masks being defined as:
[0021] where P is a parameter which is defined by a serial number of a mask, i.e. P=P(M). and which determines a number of boundaries of phase levels provided in each phase zone by this mask, and d
[0022] Preferably, the etching deaths for the masks are related by a fixed ratio. Thus, with the DOE being produced in a manner similar to that described in U.S. Pat. No. 4,895,790. P=2 [0023] Preferably, the height h of the phase levels is determined by: [0024] calculating, for each phase zone, an optimal local modulation depth, which the phase zone would have, in order to ensure 100% local diffraction efficiency in the m-th diffraction order, if the phase zone profile were continuous rather than multilevel; [0025] assuming that all the phase zones have their optimal local modulation depths and the height of the phase levels in the phase zones is a free parameter, calculating local minimal numbers of phase levels which are required to provide for the desired distribution of the diffraction efficiency; [0026] calculating local heights of the phase levels as a result of a division of the optimal local modulation depth of each phase zone by the minimal local number of levels thereof, the local height of a minimal magnitude being chosen as the optimized height of the phase levels for the entire optical element. [0027] For a better understanding of the present invention and to show how the same may be carried out in practice reference will now be made to the accompanying drawings, in which [0028]FIG. 1 is a schematic illustration of an example of a diffractive optical element according to the present invention; [0029]FIGS. 2 [0030]FIG. 3 is an illustration of a continuous surface relief corresponding to a multilevel surface relief of the kind shown in FIGS. 2 [0031]FIG. 4 shows results of a profilometer scanning of a diffractive optical element experimentally designed and recorded according to the present invention; [0032]FIG. 5 is an illustration of central sections of masks used to fabricate the multilevel diffractive optical element experimentally designed and recorded according to the present invention; [0033]FIG. 6 shows results of thermal imaging of the intensity distribution at the focus of the diffractive optical element experimentally designed and recorded according to the present invention; [0034]FIG. 7 shows intensity distribution measured alone the line at the focus plane of the diffractive optical element experimentally designed and recorded according to the present invention; [0035]FIG. 8 illustrates predicted power in the diffracted orders as a function of the x-coordinate of a cylindrical diffractive optical element according to the present invention; [0036]FIG. 9 illustrates experimental measurements of power in the diffracted orders as a function of the x-coordinate of the cylindrical DOE experimentally designed and recorded according to the present invention. [0037]FIG. 1 schematically illustrates an example of transparent multilevel phase diffractive optical element (DOE), according to the present invention. The DOE shown in FIG. 1 is of a cylindrical type designed so that its phase function depends on only one spatial coordinate. i.e. φ=φ(y). Thus, the DOE is formed with a succession of phase zones [0038] It will be described in more detail below, that the surface relief of the DOE and, particularly, along each phase zone thereof is designed so as to ensure that, at any location of the DOE and particularly at any location of any phase zone along the extension thereof, a local amplitude of the diffracted waterfront in an m-th diffraction order has a predetermined value Tm(x), whereby a desired distribution of diffraction efficiency η [0039] It should be mentioned that the DOE according to the present invention may be of any general configuration, in which case the functions φ=φ(y) and η [0040] As seen in FIG. 1 and specifically shown in FIGS. 2 [0041] As seen in FIGS. 2 [0042] It should be understood that, in general, the local profile [0043] [0044] where n [0045] The diffraction relation of the DOE is
[0046] where λ is a wavelength of the incident radiation, θ [0047] When the diffraction angle θ [0048] Thus, when the angle ε at which the phase zone profile [0049] It should be noted that, if the required inclination of a phase zone profile with respect to the optimal one is achieved by its pivoting around an edge point of the profile, not only the amplitude but also the phase of the diffracted wavefront changes, while if the profile pivots around the center thereof, no phase chance of the diffracted wavefront will occur. Notwithstanding this, the former configuration is more preferable for implementation than the latter one, because it requires less number of etching operations for each phase zone and a width of the phase levels is larger which results in less complication during the realization procedure. The phase change caused by such a configuration can be easily compensated. [0050] Reverting now to the multilevel structure of the phase zones of the DOE, it should be understood that, due to the fact that, at at least some of locations of the DOE, phase zone profiles are oriented not in their optimal manner, boundaries of phase levels which, at different locations of the DOE, are equidistant from the base [0051] As known, a local amplitude of the diffracted wavefront and consequently a local diffraction efficiency of the DOE depends not only on the specific orientation of the local profile [0052] where h is a height of the phase levels, ξ is the local number of levels:
[0053] and N is a local number of complete levels in even phase zone: N=Integer{ξ} (6) [0054] Thus, the local number of levels in each phase zone is a real number, an integer of which defines the local number of complete levels in each phase zone, which complete levels have identical widths. An incomplete level, if any, is narrower than the complete levels, being defined by a fraction of said real number. The incomplete level may be the uppermost, the lowermost or any arbitrarily disposed level of a phase zone. In the described example, an incomplete level [0055] The exact solution of Equation 4 yields the diffraction efficiency, assuming a unit amplitude incident beam, as
[0056] where
[0057] is a relative modulation depth. For a small level height, i.e.
[0058] we can replace N by ξ, so Equation 7 can be simplified to
[0059] Equation 8 is an exact solution when the modulation depth d is the complete sum of a number of level heights. [0060] The height h of the phase levels is, preferably, invariant over the entire area of the DOE, it consequently being clear from Equation 4 that the amplitude of the diffracted wavefront is essentially the function of the number of phase levels ξ=ξ(x,y) so that, by the variation thereof, it is provided that the modulation depth d of the phase zones varies in the corresponding manner, i.e. d=d(x,y). Clearly, the number of phase levels required for the provision of the predetermined values of amplitude of the diffracted wavefront depends on a magnitude of the height of the phase levels so that the less the height h, the more phase levels are required. In order to minimize the number of levels, the height h of the phase levels, according to the present invention, is of an optimized magnitude h [0061] calculating, for each location of the DOE, an optimal local modulation depth d [0062] assuming that all the phase zones have their optimal local modulation depths d [0063] calculating local heights of the phase levels
[0064] the local height which has a minimal magnitude over the entire DOE being chosen as the optimized height h [0065] It is clearly possible to choose a lower magnitude of the phase levels height and to still obtain the desired diffraction efficiency, but this will cause an increase of the number of phase levels and complicate manufacturing of the DOE. On the other hand, the height of the phase levels may be of a magnitude greater than h [0066] It will now be explained how the DOE in which, in order to provide for the desired distribution of the diffraction efficiency, the number of phase levels continuously vary from phase zone to phase zone and/or within one phase zone, can be manufactured by means of known multilevel technology, which is based on generating a plurality of M binary amplitude masks including the multilevel information and utilizing the masks' information serially for serial etching of the phase levels into the phase zones. [0067] Parameters of the masks which need to be determined for such a production of the DOE with the phase zones which, according to the present invention, have different number of phase levels, are: [0068] a maximal number of masks M [0069] a maximal modulation depth d [0070] and [0071] a binary amplitude transmittance of the masks: [0072] It can be shown that, for the DOE according to the present invention, the transmittance of the M-th mask is determined as
[0073] where P is a parameter which is defined by a serial number of a mask, i.e. P=P(M), and which determines a number of boundaries of phase levels provided in each phase zone by the mask, φ is the phase function φ=φ(x,y) of the DOE and d is the modulation depth d=d(x,y). With the local diffraction efficiencies of the DOE being predetermined, local magnitudes of the modulation depth d=d(x,y) can be determined by substituting the desired diffraction efficiency in the Equation 8 or by means of suitable computer programs based on rigorous equations of wave theory. Thus, by using Equation 11, it is possible to calculate the binary amplitude transmittance of the masks which they need to have in order to provide that, at any location of the DOE, the local diffraction efficiency will have its predetermined value. [0074] Preferably, etching depths for the masks are related by a fixed ratio. Thus, with the DOE being produced in a manner similar to that described in U.S. Pat. No. 4,895,790, P=2 [0075] With the mask transmittance being defined as above, it is possible to mathematically compensate fabrication errors which occur, when DOEs of the type to which the present invention relates are fabricated by means of conventional lithographic techniques. These errors are connected with the fact that, during etching, a width at the top of the etched layers increases, changing thereby their shape. It is known that, in order to correct such an error, the width of the etched level should be reduced by decreasing the open regions in the mask used for the etching. Mathematically, this can be represented by an increase of the duty cycle, as
[0076] where |∇φ|=|∂φ\∂x|, Δx is the width of the error introduced by the first mask (M=1), and q [0077] where
[0078] FIGS. [0079]FIG. 4 shows profilometer scans of one phase zone of the recorded DOE at three different locations [0080]FIG. 5 illustrates magnified sections of the central parts of the four masks used for the production of the DOE. As seen, the masks have fringes which are not continuous, contrary to conventionally designed masks. Moreover, the number of phase levels in each phase zone increases along the X-axis while the periodicity remains invariant. [0081] The experimental arrangement used for the evaluation of the performance of the DOE comprised a CO [0082] In an experiment of measuring a power in each of the detectable diffraction orders, namely −1, 0, +1, and +2 diffraction orders, the direct narrow beam from the CO [0083] The predicted and experimental results for the power in four diffraction orders are presented in FIGS. 8 and 9. The predicted results, shown in FIG. 8, were calculated in accordance to Equation 8. As seen, the powers are mainly in the zero and first diffraction orders. FIG. 9 shows the corresponding experimental measurements. As seen, these results conform to the calculated results. The maximal normalized power at the edge of the element was 0.89 which is only 0.08 less than the predicted one. This reduction is caused by lithographic errors such as misalignment of the masks and etch depth errors. The deviations from linearity are caused by local scattering and nonuniformities in the DOE, which were averaged and smoothened when the entire element was illuminated. Referenced by
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