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Publication numberUS20010022521 A1
Publication typeApplication
Application numberUS 09/860,587
Publication dateSep 20, 2001
Filing dateMay 21, 2001
Priority dateApr 25, 1995
Also published asUS5923189, US6049232, US6259276, US6388474, WO1996034351A1
Publication number09860587, 860587, US 2001/0022521 A1, US 2001/022521 A1, US 20010022521 A1, US 20010022521A1, US 2001022521 A1, US 2001022521A1, US-A1-20010022521, US-A1-2001022521, US2001/0022521A1, US2001/022521A1, US20010022521 A1, US20010022521A1, US2001022521 A1, US2001022521A1
InventorsYasuhiko Sasaki, Kazuo Yano, Shunzo Yamashita, Koichi Seki
Original AssigneeHitachi, Ltd.
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Semiconductor integrated circuit
US 20010022521 A1
Abstract
For the relation between the first and second pass-transistor circuits (PT1, PT2), the output signal of the preceding-stage is supplied to the gate of the succeeding-stage, and for the relation between the second and third pass-transistor circuits (PT2, PT3), the output signal of the preceding-stage is supplied to the source-drain path of the succeeding-stage. The first pass-transistor circuit (PT1) receives on its first input node (In1) and second input node (In2) the first input signal and the second input signal that are logically independent from each other. This logic circuit requires a smaller number of transistors and is capable of reducing the power consumption and delay and accomplishing an intricate logic function.
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Claims(6)
What is claimed is:
1. A semiconductor integrated circuit, comprising:
a logic circuit which includes first to third pass-transistor circuits,
wherein each of said first to third pass-transistor circuits has,
a first input node,
a second input node,
an output node,
a first field effect transistor having its source-drain path coupled to the first input node and the output node, and
a second field effect transistor having its source-drain path coupled to the second input node and the output node,
wherein the first field effect transistor of said second pass-transistor circuit has its gate responding to a signal provided on the output node of said first pass-transistor circuit,
wherein at least one of the first field effect transistor and second field effect transistor of said third pass-transistor circuit has its source-drain path coupled to one of the first input node and the output node of said second pass-transistor circuit, and
wherein the first input node and the second input node of said first pass-transistor circuit are respectively supplied with an input signal and another input signal, that are logically independent from each other.
2. A semiconductor integrated circuit according to
claim 1
,
wherein at least one of the first field effect transistor and the second field effect transistor of said third pass-transistor circuit has its source-drain path coupled to the first input node of said second pass-transistor circuit,
wherein the first and second field effect transistors of said first pass-transistor circuit have their gates responding to first complementary input signals and become conductive in a complementary fashion,
wherein the first and second field effect transistors of said second pass-transistor circuit have their gates responding to second complementary input signals and become conductive in a complementary fashion,
wherein the first and second field effect transistors of said third pass-transistor circuit have their gates responding to third complementary input signals and become conductive in a complementary fashion,
wherein said first pass-transistor circuit produces on its output node a logical-product signal of the first complementary input signals and the input signal supplied to the first input node of said first pass-transistor circuit,
wherein said third pass-transistor circuit produces on its output node a logical-product signal of the third complementary input signals and the input signal supplied to the first input node of said third pass-transistor circuit,
wherein said second pass-transistor circuit is supplied with the second complementary input signals that responds to the logical-product signal produced on the output node of said first pass-transistor circuit and produces on its output node a synthesis logical-product signal from the logical-product signal on the output node of said first pass-transistor circuit and the logical-product signal on the output node of said third pass-transistor circuit.
3. A semiconductor integrated circuit according to
claim 1
,
wherein at least one of the first field effect transistor and second field effect transistor of said third pass-transistor circuit has its source-drain path coupled to the output node of said second pass-transistor circuit,
wherein the first and second field effect transistors of said first pass-transistor circuit have their gates responding to first complementary input signals and become conductive in a complementary fashion,
wherein the first and second field effect transistors of said second pass-transistor circuit have their gates responding to second complementary input signals and become conductive in a complementary fashion,
wherein the first and second field effect transistors of said third pass-transistor circuit have their gates responding to third complementary input signals and become conductive in a complementary fashion,
wherein said first pass-transistor circuit produces on its output node a logical-product signal of the first complementary input signals and the first input signal supplied to its first input node,
wherein said second pass-transistor circuit is supplied with the second complementary input signals that responds to the logical-product signal produced on the output node of said first pass-transistor circuit and produces on its output node a logical-product signal of the logical-product signal on the output node of said first pass-transistor circuit and said input signal received on the first input node of said second pass-transistor circuit, and
wherein said third pass-transistor circuit is supplied on its first input node with an input signal that responds to the logical-product signal produced on the output node of said second pass-transistor circuit and produces on its output node a synthesis signal of a logical-product signal of the logical-product signal produced on the output node of said second pass-transistor circuit and the third complementary input signal.
4. A semiconductor integrated circuit according to
claim 2
,
wherein said first and second field effect transistors of each of said first, second and third pass-transistor circuits of said logic circuit are n-channel MOSFETs,
wherein said logical-product signal produced on the output node of said first pass-transistor circuit is delivered to an input of a CMOS inverter circuit, said inverter circuit producing the second complementary input signals to be delivered to said second pass-transistor circuit.
5. A semiconductor integrated circuit comprising:
at least two logic circuits each having a circuit structure and a logic signal supplying scheme similar to those of the semiconductor integrated circuit set forth in
claim 1
; and
a synthesis logic circuit for logically processing the output signals of said two logic circuits.
6. A semiconductor integrated circuit comprising:
at least two logic circuits each having a circuit structure and a logic signal supplying scheme similar to those of the semiconductor integrated circuit set forth in
claim 4
; and
a synthesis logic circuit for logically processing the output signals of said two logic circuits.
Description
    BACKGROUND OF THE INVENTION
  • [0001]
    The present invention relates to a semiconductor integrated circuit, and particularly to a semiconductor integrated circuit which can be used in general-purpose processors, signal processors, video processors and the like including logic circuits.
  • [0002]
    Among circuitries using pass-transistors, there have been introduced differential pass-transistor logics as described in IEEE Journal of Solid-state Circuits, Vol.SC-22, No.2, April 1987, pp.216-222 (will be called the first prior art) and complementary pass-transistor logics as described in IEEE Journal of Solid-state Circuits, Vol.SC-25, No. 2, April 1990, pp.388-395 (will be called the second prior art). These circuitries are complementary logic circuits using both inverting and non-inverting logics.
  • [0003]
    Pass-transistor circuits using single-channel MOSFETs, instead of complementary MOSFETs, and a design scheme of pass-transistor circuits of the standard cell scheme are described in Custom Integrated Circuits Conference 1994 Digest, pp.603-606 (will be called the third prior art).
  • [0004]
    A configuration scheme of pass-transistor circuits based on a logic expression called a binary decision diagram is described in the Proceeding of 1994 Autumn Convention of The Institute of Electronics, Information and Communication Engineers of Japan, edition of fundamentals and interfaces, p.64 (will be called the fourth prior art).
  • [0005]
    A logical operation scheme based on the binary decision diagram is described in IEEE, Transaction on Computers, Vol.C-35, No.8. August 1986, pp.677-691 (will be called the fifth prior art).
  • [0006]
    Logic circuits for accomplishing logics of exclusive-OR circuits, full adders and the like based on a scheme of supplying an output signal of a preceding-stage complementary pass-transistor circuit to the gates of complementary MOSFETs of a succeeding-stage complementary transistor circuit are described in Japanese Laid-Open Patent Application No. 1-216622 (will be called the sixth prior art).
  • [0007]
    Logic circuits for accomplishing logics of exclusive-OR circuits, full adders and the like based on a scheme of supplying an output signal of a preceding-stage complementary pass-transistor circuit to the sources of complementary MOSFETs of a succeeding-stage complementary transistor circuit are described in Japanese Laid-Open Patent Application No. 1-256219 (will be called the seventh prior art).
  • [0008]
    A parity detection and generation circuit using exclusive-OR circuits based on a scheme of supplying an output signal of a preceding-stage complementary pass-transistor circuit to the gates of complementary MOSFETs of a succeeding-stage complementary transistor circuit and a scheme of supplying a output signal of a preceding-stage complementary pass-transistor circuit to the sources of complementary MOSFETs of the succeeding-stage complementary transistor circuit are described in U.S. Pat. No. 4,477,904 (will be called the eighth prior art).
  • SUMMARY OF THE INVENTION
  • [0009]
    A pass-transistor circuit requires a smaller number of transistors as compared with a conventional CMOS logic circuit in accomplishing a same logic function, and accordingly the circuit is more suitable for reduced power consumption and delay. However, it is more difficult to synthesize logic circuits comprised of pass-transistor circuits, and therefore they have not been used for random logic circuits which require all logic functions.
  • [0010]
    The above-mentioned sixth prior art, which adopts a scheme of supplying an output signal of a preceding-stage complementary pass-transistor circuit to the gates of complementary MOSFETs of a succeeding-stage complementary transistor circuit, and the seventh prior art, which adopts a scheme of supplying the output signal of the preceding-stage complementary pass-transistor circuit to the sources of complementary MOSFETs of the succeeding-stage complementary transistor circuit, are both used for logic circuits for accomplishing logics of exclusive-OR circuits, full adders and the like. The sixth and seventh prior arts, however, do not disclose a method for using pass-transistor circuits for accomplishing all logic functions.
  • [0011]
    The above-mentioned eighth prior art, which adopts both a scheme of supplying an output signal of the preceding-stage complementary pass-transistor circuit to the gates of complementary MOSFETs of the succeeding-stage complementary transistor circuit and a scheme of supplying the output signal of the preceding-stage complementary pass-transistor circuit to the sources of complementary MOSFETs of the succeeding-stage complementary transistor circuit, is applied to parity detection and generation circuits using exclusive-OR circuits. The eighth prior art, however, does not disclose a method for using pass-transistor circuits for accomplishing all logic functions.
  • [0012]
    It is necessary accomplish intricate logic functions with a smaller number of transistors, if it is intended to provide pass-transistor circuits that can be used for a random logic circuit which requires all logic functions.
  • [0013]
    The study of the inventors of the present invention revealed that it is difficult for the eighth prior art to accomplish intricate logic functions with a smaller number of transistors, because two MOSFETs of a same conductivity type in the preceding-stage complementary pass-transistor circuit, which drives the gates or sources of complementary MOSFETs of the succeeding-stage pass-transistor circuit, are supplied on their sources with complementary logic signals (high and low).
  • [0014]
    Accordingly, an object of the present invention is to provide a semiconductor integrated circuit including pass-transistor circuits which require a smaller number of transistors, are suitable for reduction of the power consumption and delay and accomplish intricate logic functions.
  • [0015]
    In order to achieve the above objective, the semiconductor integrated circuit according to one mode for carrying out the present invention comprises a logic circuit which includes first, second and third pass-transistor circuits (PT1, PT2, PT3). Each pass-transistor circuit has a first input node (In1), a second input node (In2), an output node (Out), a first field effect transistor (will be termed “FET” hereinafter) (Q1) having its source-drain path coupled to the first input node (In1) and the output node (Out), and a second FET (Q2) having its source-drain path coupled to the second input node (In2) and the output node (Out). The first FET (Q1) of the second pass-transistor circuit (PT2) has its gate responding to a signal on the output node (Out) of the first pass-transistor circuit (PT1). At least one of the first FET (Q1) and second FET (Q2) of the third pass-transistor circuit (PT3) has its source-drain path coupled to one of the first input node (In1) and output node (Out) of the second pass-transistor circuit (PT2). The first input node (In1) and the second input node (In2) of the first pass-transistor circuit (PT1) are respectively supplied with an input signal and another input signal (B, GND) that are logically independent from each other. See FIGS. 1 and 2.
  • [0016]
    The semiconductor integrated circuit according to this mode for carrying out the present invention bases the logical decision of the logic circuit output signal, which is obtained on one of the output node of the second pass-transistor circuit and the output node of the third pass-transistor circuit, on (1) a scheme adopted between the first and second pass-transistor circuits, of supplying an output signal of a preceding-stage pass-transistor to a gate of a succeeding-stage pass-transistor, (2) a scheme adopted between the second and third pass-transistor circuits, of supplying an output signal of a preceding-stage pass-transistor to the source-drain path of a succeeding-stage pass-transistor, and (3) a scheme of supplying the input signals that are logically independent from each other to the first and second input nodes of the first pass-transistor circuit.
  • [0017]
    Thus, the output signal of the logic circuit which includes the first, second and third pass-transistor circuits on these three schemes of applying signals, and therefore, this semiconductor integrated circuit needs a smaller number of transistors and reduced the power consumption and delay and can accomplish intricate logic functions.
  • [0018]
    Furthermore, a semiconductor integrated circuit which is capable of accomplishing more intricate logic functions can be obtained by changing inter-connection among the first, second and third pass-transistor circuits or by adopting complicated schemes of supplying logical input signals to the first and second input nodes of these pass-transistor circuits.
  • [0019]
    In the semiconductor integrated circuit according to a specific mode for carrying out the present invention, at least one of the first FET (Q1) and second FET (Q2) of the third pass-transistor circuit (PT3) has its source-drain path coupled to the first input node (In1) of the second pass-transistor circuit (PT2). The first and second FETs (Q1, Q2) of the first pass-transistor circuit (PT1) have their gates responding to first complementary input signals (A, /A) and become conductive in a complementary fashion. The first and second FETs (Q1, Q2) of the second pass-transistor circuit (PT2) have their gates responding to second complementary input signals and become conductive in a complementary fashion. The first and second FETs (Q1, Q2) of the third pass-transistor circuit (PT3) have their gates responding to third complementary input signals (C, /C) and become conductive in a complementary fashion. The first pass-transistor circuit (PT1) produces on its output node (Out) a logical product signal (AB) of the first complementary input signals (A, /A) and an input signal (B) received on its first input node (In1). The third pass-transistor circuit (PT3) produces on its output node (Out) a logical product signal (CD) of the third complementary input signals (C, /C) and an input signal (D) received on its first input node (In1). The second pass-transistor circuit (PT2) is supplied with the second complementary input signals derived from the logical product signal (AB) produced on the output node (Out) of the first pass-transistor circuit (PT1) and produces on its output node (Out) a synthesis signal (ABCD) of a logical product of the logical product signal (AB) on the output node (Out) of the first pass-transistor circuit (PT1) and the logical-product signal (CD) on the output node (Out) of the third pass-transistor circuit (PT3). See in FIG. 1.
  • [0020]
    In a semiconductor integrated circuit according to another specific mode for carrying out the present invention, at least one of the first FET (Q1) and second FET (Q2) of the third pass-transistor circuit (PT3) has its source-drain path coupled to the output node (Out) of the second pass-transistor circuit (PT2). The first and second FETs (Q1, Q2) of the first pass-transistor circuit (PT1) have their gates responding to first complementary input signals (A, /A) and become conductive in a complementary fashion. The first and second FETs (Q1, Q2) of the second pass-transistor circuit (PT2) have their gates responding to second complementary input signals and become conductive in a complementary fashion. The first and second FETs (Q1, Q2) of the third pass-transistor circuit (PT3) have their gates responding to third complementary input signals (D, /D) and become conductive in a complementary fashion. The first pass-transistor circuit (PT1) produces on its output node (Out) a logical-product signal (AB) of the first complementary input signals (A, /A) and a first input signal (B) received on its first input node (In1). The second pass-transistor circuit (PT2) is supplied with the second complementary input signals derived from the logical-product signal (AB) produced on the output node (Out) of the first pass-transistor circuit (PT1) and produces on its output node (Out) a logical product signal (ABC) of the logical-product signal (AB) and an input signal C received on its first input node (In1). The third pass-transistor circuit (PT3) is supplied on its first input node (In1) with the logical product signal (ABC) from the output node (Out) of the second pass-transistor circuit (PT2) and produces on its output node (Out) a synthesis signal (ABC/D) of a logical product of the logical-product signal (ABC) provided from the output node (Out) of the second pass-transistor circuit (PT2) and the third complementary input signals (D, /D). See FIG. 2.
  • [0021]
    In a semiconductor integrated circuit according to a more specific mode for carrying out the present invention, the first and second FETs (Q1, Q2) of each of the first, second and third pass-transistor circuits (PT1, PT2, PT3) are n-channel MOSFETs. The logical-product signal (AB) produced on the output node (Out) of the first pass-transistor circuit (PT1) is supplied to the inputs of CMOS inverters (4000, 4002, 4003, 4004) supplied. The second complementary input signals to be supplied to the second pass-transistor circuit (PT2) are produced from the outputs of the CMOS inverters (4000, 4002, 4003, 4004). See FIG. 4.
  • [0022]
    A semiconductor integrated circuit according to a most specific mode for carrying out the present invention comprises at least two logic circuits (LC1, LC2) having a circuit structure and a logic signal supplying scheme, both similar to those of the logic circuit mentioned above, and a synthesis logic circuit (LC12) which logically processes output signals of the logic circuits (LC1, LC2). See FIGS. 3 and 4.
  • [0023]
    Other objects and novel features of the present invention will be apparent from the following description of embodiments.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • [0024]
    [0024]FIG. 1 is a schematic diagram of a logic circuit according to an embodiment of the present invention;
  • [0025]
    [0025]FIG. 2 is a schematic diagram of the logic circuit according to another embodiment of the present invention;
  • [0026]
    [0026]FIG. 3 is a schematic diagram of the 16-input AND circuit according to still another embodiment of the present invention;
  • [0027]
    [0027]FIG. 4 is a schematic diagram of a 16-input AND circuit according to a variant embodiment of the present invention; and
  • [0028]
    [0028]FIG. 5 is a schematic diagram of a 16-input AND circuit established by the inventors of the present invention.
  • DESCRIPTION OF THE PREFERRED AND OTHER EMBODIMENTS
  • [0029]
    Embodiments of the present invention will be explained with reference to the drawings.
  • [0030]
    [0030]FIG. 1 and FIG. 2 show the schematic diagrams of semiconductor integrated circuits including logic circuits according to different embodiments of the present invention. Circuit elements are formed in a single monocrystalline silicon semiconductor substrate based on the known fabrication techniques of semiconductor integrated circuits.
  • [0031]
    The logic circuits of this semiconductor integrated circuit of these embodiments have first to third pass-transistor circuit (PT1, PT2, PT3).
  • [0032]
    Each pass-transistor circuit (PT1, PT2 or PT3) has a first input node (In1), a second input node (In2), an output node (Out), a first FET (Q1) having its source-drain path coupled to the first input node (In1) and the output node (Out), and a second FET (Q2) having its source-drain path coupled to the second input node (In2) and the output node (Out).
  • [0033]
    The first FET (Q1) of the second pass-transistor circuit (PT2) has its gate responding to the signal on the output node (Out) of the first pass-transistor circuit (PT1). At least one of the first FET (Q1) and second FET (Q2) of the third pass-transistor circuit (PT3) has its source-drain path coupled to one of the first input node (In1) and output node (Out) of the second pass-transistor circuit (PT2). The first input node (In1) and second input node (In2) of the first pass-transistor circuit (PT1) are supplied with first and second input signals (B, GND), respectively, that are logically independent from each other.
  • [0034]
    The first and second FETs (Q1, Q2) of each pass-transistor circuit (PT1, PT2 or PT3) are n-channel MOSFETS.
  • [0035]
    CMOS inverter circuits (INV1, INV2, INV3) are coupled to the gates of the first and second FETs (Q1, Q2) of the first to third pass-transistor circuits (PT1, PT2, PT3), respectively.
  • [0036]
    In a modified embodiment, the second FETs (Q2) of the first and third pass-transistor circuits (PT1, PT2, PT3) may be replaced with p-channel MOSFETs. In this case, the CMOS inverter circuits (INV1, INV2, INV3) are eliminated, and the gates of the first and second FETs (Q1, Q2) of each pass-transistor circuit can be connected directly.
  • [0037]
    Next, the circuit structure and an operation of the logic circuit shown in FIG. 1 will be explained in more detail.
  • [0038]
    In the first pass-transistor circuit (PT1), the first n-channel FET (Q1) is supplied on its gate with a logical input signal A that has either a high or low level, and the second n-channel FET (Q2) is supplied on its gate with an inverted signal /A of the logical input signal A by way of the CMOS inverter circuit (INV1). The first input node (In1) is supplied with a logical input signal B that has either a high or low level, and the second input node (In2) is supplied with a fixed ground voltage (GND). Consequently, the first pass-transistor circuit (PT1) produces on its output node (Out) an output signal AB that is the logical product of a logical input signals A and B.
  • [0039]
    The logical output signal AB of the first pass-transistor circuit (PT1) is delivered to the gate of the first FET (Q1) of the second pass-transistor circuit (PT2), which has the second FET (Q2) supplied on its gate with an inverted signal of AB by way of the CMOS inverter circuit INV2.
  • [0040]
    In the third pass-transistor circuit (PT3), the first n-channel FET (Q1) is supplied on its gate with a logical input signal C that has either a high or low level, and the second n-channel FET (Q2) is supplied on its gate with an inverted signal /C of the logical input signal C by way of the CMOS inverter circuit (INV3). The first input node (In1) is supplied with a logical input signal D that has either a high or low level, and the second input node (In2) is supplied with a fixed ground voltage (GND). Consequently, the third pass-transistor circuit (PT3) produces on its output node (Out) an output signal CD that is a logical product of the logical input signals C and D.
  • [0041]
    The logical output signal CD of the third pass-transistor circuit (PT3) is delivered to the first input node (In1) of the second pass-transistor circuit (PT2), which has the first FET (Q1) supplied on its gate with the logical output signal AB of the first pass-transistor circuit (PT1). Consequently, the second pass-transistor circuit (PT2) produces on its output node (Out) an output signal ABCD that is a logical product of the logical input signals A, B, C and D.
  • [0042]
    Accordingly, the logic circuit which includes the first to third pass-transistor circuits (PT1, PT2, PT3) of the embodiment shown in FIG. 1 functions as a 4-input AND circuit. A multi-input AND circuit obviously has a role of basic logic functions for random logic circuits which require all logic functions, and therefore the logic circuit of this embodiment has very high practical advantage.
  • [0043]
    The logic circuit of this embodiment can readily be modified to accomplish more intricate logic functions. For example, the first pass-transistor circuit (PT1) is supplied on its second input node (In2) with a logical input signal X that has either a high or low level in place of the fixed ground voltage (GND). In this case, the first pass-transistor circuit (PT1) produces on its output node (Out) a signal AB+/AX that is a logical sum of a logical-product signal /AX (a logical product of the inverted logical input signal /A and logical input signal X) and a logical-product signal AB (a logical product of the logical input signals A and B). Finally, the second pass-transistor circuit (PT2) will produce obviously on its output node (Out) a very intricate logical output signal.
  • [0044]
    Now, the circuit structure and an operation of the logic circuit shown in FIG. 2 will be explained.
  • [0045]
    In the first pass-transistor circuit (PT1), the first n-channel FET (Q1) is supplied on its gate with a logical input signal A that has either a high or low level, and the second n-channel FET (Q2) is supplied on its gate with an inverted signal /A of the logical input signal A by way of the CMOS inverter circuit (INVI). The first input node (In1) is supplied with a logical input signal B that has either a high or low level, and the second input node (In2) is supplied with a fixed ground voltage (GND). Consequently, the first pass-transistor circuit (PT1) produces on its output node (Out) an output signal AB that is a logical product of the logical input signals A and B.
  • [0046]
    The logical output signal AB of the first pass-transistor circuit (PT1) is delivered to the gate of the first FET (Q1) of the second pass-transistor circuit (PT2), which has the second FET (Q2) supplied on its gate with an inverted signal of AB by way of the CMOS inverter circuit (INV2). The second input node (In2) is supplied with a fixed ground voltage (GND). Consequently, the second pass-transistor circuit (PT2) produces on its output node (Out) an output signal ABC that is a logical product of the logical input signals A, B and C.
  • [0047]
    In the third pass-transistor circuit (PT3), the first input node (In1) is supplied with the logical output signal ABC from the output node (Out) of the second pass-transistor circuit (PT2), the first FET (Q1) is supplied on its gate with an inverted signal /D of a logical input signal D by way of the CMOS inverter circuit (INV3), the second FET (Q2) is supplied on its gate with the logical input signal D, and the second input node (In2) is supplied with a fixed ground voltage (GND). Consequently, the third pass-transistor circuit (PT3) produces on its output node (Out) an output signal ABC/D that is a logical product of the logical input signals A, B and C and inverted logical input signal /D.
  • [0048]
    The logic circuit of this embodiment can readily be modified to accomplish more intricate logic functions. For example, the first to third pass-transistor circuits (PT1, PT2, PT3) are respectively supplied on their second input nodes (In2) with logical input signals X, Y and Z that have either a high or low level, in place of the fixed ground voltage (GND). In this case, the third pass-transistor circuit (PT3) will produce obviously on its output node (Out) a very intricate logical output signal.
  • [0049]
    According to the foregoing embodiments of the present invention, it becomes possible to accomplishing more intricate logic functions by changing mutual coupling form of the first to third pass-transistor circuits (PT1, PT2, PT3) and by complicating signal supplying schemes for supplying logical input signals to the first and second input nodes (In1, In2) of these pass-transistor circuits, while at the same time it is possible to reduce the number of transistors, power consumption and delay.
  • [0050]
    For determining the mutual coupling form of the first to third pass-transistor circuits and signal supplying schemes of logical input signals for these pass-transistor circuits, the binary decision diagram similar to that of the above-mentioned fourth prior art can be used.
  • [0051]
    [0051]FIG. 5 shows a 16-input AND circuit established by the inventors of the present invention based on serial connection of 15 pass-transistor circuits. Since the critical path from a logical input signal Q to the output OUT of this circuit arrangement is serial connection of 15 pass-transistor circuits, the AND circuit suffers a very large signal propagation delay.
  • [0052]
    [0052]FIG. 3 shows in contrast a 16-input AND circuit according to further another embodiment of the present invention, which reduces the signal propagation delay by application of the binary decision diagram. Each of logic circuit blocks (LC1, LC2, LC3 and LC4) has the same circuit structure as the logic circuit shown in FIG. 1. Accordingly, the logic circuit blocks (LC1, LC2, LC3 and LC4) produce a logical-product signal ABCD, EFGH, IJKL and MNPQ, respectively.
  • [0053]
    Logic circuit blocks (LC12 and LC34) produce logical-product signals ABCDEFGH and IJKLMNPQ, respectively, and finally a logic circuit block (LC1234) produces a logical-product signal ABCDEFGHIJKLMNPQ. The critical path of the whole AND circuit is serial connection of four pass-transistor circuits, and the signal propagation delay can be reduced significantly.
  • [0054]
    [0054]FIG. 4 shows a modified embodiment derived from the 16-input AND circuit of FIG. 3, which recovers a loss in a signal level which occurs during a signal passes through the pass-transistor circuits, by modifying the circuit structure and connection of the embodiment shown in FIG. 3.
  • [0055]
    It is known that a signal that passes through a pass-transistor circuit formed solely of n-channel MOSFETs suffers a loss of a threshold voltage between the gate-source voltage of the n-channel MOSFETS. In FIG. 4, CMOS inverters (4000, 4001, 4002, 4003, 4004, 4005 and 4006), included in the logic circuit blocks (LC1, LC2, LC3 and LC4) as amplifiers, recovers the loss of the threshold voltage. Based on this circuit arrangement, each CMOS inverter produces a correct low-level signal even if its high-level input signal has a slightly lower voltage level. The signal supplying scheme of a signal to the gates of the output pass-transistor circuits of the logic circuit blocks (LC1, LC2, LC3, LC4) has been modified, because the CMOS inverters (4000-4006) inverts logical inputs. Also, the signal supplying scheme of a signal to the gates of the pass transistor circuits in the logic circuit diagram (LC12, LC34, LC1234) has been modified. It is clear that the logic circuit block LC1234 produces a logical-product signal ABCDEFGHIJKLMNPQ.
  • [0056]
    While there have been described various embodiments of the present invention, the present invention is not confined to these specific embodiments, but changes and modifications may be made obviously within the scope of its technical idea.
  • [0057]
    For example, the field effect transistors used in the pass-transistor circuits are not confined to MOSFETs, but MESFETs formed of compound semiconductor of GaAs can also be used. Logic circuits including the inventive pass-transistor circuits of the present invention can obviously be applied to, for example, a random logic circuit which controls an instruction execution unit by analyzing RISC-type instructions in an LSI such as a general-purpose processor, a signal processor or a video processor, thereby reducing the power consumption and delay of the whole LSI circuit.
  • [0058]
    The present invention offers a semiconductor integrated circuit including pass-transistor circuits which requires a smaller number of transistors and are capable of reducing the power consumption and delay and accomplishing an intricate logic function.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US6919647 *Dec 11, 2003Jul 19, 2005American Semiconductor, Inc.SRAM cell
US7015547Jul 3, 2003Mar 21, 2006American Semiconductor, Inc.Multi-configurable independently multi-gated MOSFET
US7019342Nov 21, 2003Mar 28, 2006American Semiconductor, Inc.Double-gated transistor circuit
US7550730 *Apr 8, 2008Jun 23, 2009International Business Machines CorporationMethod for detecting alpha particles in SOI technology
US7875854 *Apr 8, 2008Jan 25, 2011International Business Machines CorporationDesign structure for alpha particle sensor in SOI technology and structure thereof
US20050001218 *Nov 21, 2003Jan 6, 2005Hackler Douglas R.Double-gated transistor circuit
US20050001319 *Jul 3, 2003Jan 6, 2005Hackler Douglas R.Multi-configurable independently multi-gated MOSFET
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Classifications
U.S. Classification326/113
International ClassificationG06F17/50, H03K19/173
Cooperative ClassificationH03K19/1737, G06F17/505, H03K19/1736
European ClassificationH03K19/173C2, G06F17/50D2, H03K19/173C1A
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