Search Images Maps Play YouTube News Gmail Drive More »
Sign in
Screen reader users: click this link for accessible mode. Accessible mode has the same essential features but works better with your reader.

Patents

  1. Advanced Patent Search
Publication numberUS20010050729 A1
Publication typeApplication
Application numberUS 09/097,372
Publication dateDec 13, 2001
Filing dateJun 15, 1998
Priority dateJun 14, 1997
Also published asUS6459463
Publication number09097372, 097372, US 2001/0050729 A1, US 2001/050729 A1, US 20010050729 A1, US 20010050729A1, US 2001050729 A1, US 2001050729A1, US-A1-20010050729, US-A1-2001050729, US2001/0050729A1, US2001/050729A1, US20010050729 A1, US20010050729A1, US2001050729 A1, US2001050729A1
InventorsYong Beom Kim, Jeong Min Moon, Sung Jun Bae, Jae Hong Jun
Original AssigneeYong Beom Kim, Jeong Min Moon, Sung Jun Bae, Jae Hong Jun
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Reflective-type liquid crystal display device and method of manufacturing thereof
US 20010050729 A1
Abstract
A reflective-type liquid crystal display device includes first and second substrates, a liquid crystal layer between the first and second substrates, thin film transistors on each cross of gate and data bus lines, a photoresist layer on the gate and data bus lines, and thin film transistors, reflection electrodes on the photoresist layer and electrically coupled to the thin film transistors, and light shield layers on the gate and data bus lines.
Images(3)
Previous page
Next page
Claims(15)
What is claimed is:
1. A reflective-type liquid crystal display device comprising :
first and second substrates;
a liquid crystal layer between the first and second substrates;
a plurality of gate and data bus lines defining pixel regions on said first substrate;
a plurality of thin film transistors on each cross of said gate and data bus lines;
a photoresist layer on gate and data bus lines, and thin film transistors, wherein a surface of said photoresist layer being bent;
a plurality of reflection electrodes on said photoresist layer and electrically coupled to said thin film transistors; and
a plurality of light shield layers on said gate and data bus lines.
2. The device of
claim 1
, wherein said reflection electrodes is not formed on said thin film transistor.
3. The device of
claim 1
to 2, wherein said light shield layers is formed said gate and data bus lines, and thin film transistor.
4. The device of
claim 1
, wherein some parts of said gate and data bus lines is covered by said neighboring reflection electrodes.
5. The device of
claim 1
, wherein said reflection electrodes drive liquid crystal molecules in said liquid crystal layer with a counter electrode on said second substrate.
6. The device of
claim 1
, wherein said light shield layers include a black resin.
7. The device of
claim 1
, further comprising:
a first alignment layer over the first substrate; and
a second alignment layer over the second substrate.
8. The device of
claim 7
, wherein said first alignment layer includes a material selected from the group consisting of polyvinylcinnamate, polysiloxanecinnamate, celluosecinnamate, polyimide, polyamide, polyvinylalcohol, polyamic acid, and SiO2.
9. The device of
claim 7
, wherein said second alignment layer includes a material selected from the group consisting of polyvinylcinnamate, polysiloxanecinnamate, celluosecinnamate, polyimide, polyamide, polyvinylalcohol, polyamic acid, and SiO2.
10. A method for manufacturing a reflective-type liquid crystal display device, the method comprising the steps of:
providing first and second substrates;
forming a plurality of thin film transistors on said first substrate;
forming a photoresist layer on said first substrate and thin film transistors;
forming a light shield layer on said photoresist layer;
forming a plurality of reflection electrodes on said photoresist layer and light shield layer; and
providing a liquid crystal layer between the first and second substrates.
11. The method of
claim 10
, wherein said step of forming a plurality of thin film transistors includes the step of forming a plurality of gate and data bus lines.
12. The method of
claim 10
to 11, wherein some parts of said gate and data bus lines is covered by said neighboring reflection electrodes.
13. The method of
claim 10
, wherein said step of forming a photoresist layer includes the step of:
depositing a photopolymer resin on said first substrate;
exposing a surface of said photopolymer resin to light; and
partially developing said exposed surface of said photopolymer resin.
14. The method of
claim 13
, wherein said step of exposing a surface of said photopolymer resin is executed with a mask having micro patterns.
15. The method of
claim 14
, wherein two regions to be developed and undeveloped of photopolymer resin are determined by the micro patterns of the mask.
Description
BACKGROUND OP THE INVENTION

[0001] A. Field of the Invention

[0002] This invention relates to a liquid crystal display device and, more particularly, a reflective-type liquid crystal display device and a method of manufacturing thereof.

[0003] B. Description of the Related Art

[0004] The liquid crystal display device (hereinafter “LCD”) can be classified into a transmissive-type LCD using a back light and a reflective-type LCD using a surrounding light in accordance with the driving type. The transmissive-type LCD, however, requires a high consumption power. Further, it is difficult to minimize the apparatus due to the back light.

[0005] For the above reason, recently, the reflective-type LCD have been extensively studied.

[0006] Since a matter of concern of the reflective-type LCD is to use the surrounding light effectively, at present, a reflective-type LCD having a light compensation film which is provided inner side and/or outer side of the apparatus or a modified structure of reflector being proposed.

[0007] The U.S. Pat. No. 5,500,750 have proposed a reflector having convex portions. The above patent disclosed a structure comprising a pair of substrates having a liquid crystal layer therebetween, a plurality of bumps on the lower substrate, an insulating layer on the bumps, and a plurality of reflection electrodes on the insulating layer and thin film transistors (hereinafter “TFT”). In this structure, the reflection electrode which functions as a black matrix on the TFT is electrically insulated from other electrodes, and a plurality of black filters shield open regions between neighboring reflection electrodes.

[0008] The above LCD, however, have manufactured by complex processes, and have not proposed to use the surrounding light effectively. Namely, since the black filter is disposed in the direction which light is incident, an incidence area of light is limited and a light leakage may be generated on the opened regions between neighboring reflection electrodes.

SUMMARY OF THE INVENTION

[0009] In view of the foregoing, it is an object of the present invention to provide a reflective-type LCD having a superior efficiency and to provide a method of manufacturing thereof.

[0010] The object and advantages of the invention will be realized and attained by means of the elements and combinations particularly pointed out in the appended claims.

[0011] To achieve the object and in accordance with the purpose of the invention, as embodied and broadly described herein, the invention includes first and second substrates, a liquid crystal layer between the first and second substrates, a photoresist layer on the first substrate, a plurality of reflection electrodes on the photoresist layer, a plurality of black matrixes on open regions between neighboring reflection electrodes, a first alignment layer over the first substrate, a counter electrode on the second substrate, and a second alignment layer over the second substrate.

[0012] According to another aspect of the invention, the reflection electrodes are opened at TFT regions as well as between neighboring reflection electrodes.

[0013] A method according to the invention includes the steps of providing first and second substrates, forming a plurality of TFTs on the first substrate, forming a photoresist layer over the first substrate, forming a plurality of black matrixes on the photoresist layer, forming a plurality of reflection electrodes on the photoresist layer and the black matrixes, providing first and second alignment layers on the first and second substrates, and providing a liquid crystal layer between the first and second substrates.

[0014] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention, as claimed.

[0015] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate the embodiments of the invention and, together with the description, serve to explain the principles of the invention.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016]FIG. 1A is a plan view of an LCD in accordance with a first embodiment of the present invention, and FIG. 1B is a section view in accordance with A-A line of FIG. 1A.

[0017]FIG. 2A is a plan view of an LCD in accordance with a second embodiment of the present invention, and FIG. 2B is a section view in accordance with A-A line of FIG. 2A.

[0018]FIG. 3 is a section view in accordance with B-B line of FIG. 1A and FIG. 2A.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0019] Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Wherever possible, the same reference numbers will be used throughout the drawings to refer to the same or like parts.

[0020]FIG. 1A is a plan view of an LCD in accordance with a first embodiment of the present invention, and FIG. 1B is a section view in accordance with A-A line of FIG. 1A.

[0021] As shown in the drawings, an unit pixel in accordance with the present invention is represented by, a gate bus line 11, a data bus line 20, and a gate electrode 12 on a first substrate 10 a, a gate insulator 14 on the first substrate 10 a, a semiconductor layer 16, an ohmic contact layer 18, a source electrode 19 a, and a drain electrode 19 b on the gate insulator 14, a photoresist layer 22 over the first substrate 10 a, a black matrix 24 on the photoresist layer 22, a reflection electrode 26 on the photoresist layer 22, a first alignment layer 30 a on the reflection electrode 26, a counter electrode 29 on a second substrate 10 b, and a second alignment layer 30 b on the counter electrode 29.

[0022] A method for manufacturing the LCD having above-mentioned structure is described in detail hereinafter.

[0023] The gate electrode 12 is formed by depositing and patterning a metal such as Ta, Cr, or Al by the sputtering method on the first substrate 10 a, at this time the gate bus line 11 is formed. The gate insulator 14 is formed by depositing an inorganic material such as SiNx or SiOx by the PECVD(plasma enhanced chemical vapor deposition) method on the gate insulator 14 and the first substrate 10 a. The semiconductor layer 16 and the ohmic contact layer 18 are formed by depositing and patterning materials such as a-Si:H and n+a-Si:H by PECVD method. After, the source electrode 19 a, the drain electrode 19 b, and the data bus line 20 are formed by depositing a metal such as Ti, Cr/Al, Cr/Al-Ta, or Cr/Al/Al-Ta by sputtering method.

[0024] To form the photoresist layer 22 on the TFT and the gate and data bus lines 11, 20 includes the steps of depositing a photopolymer resin such as acrylic resin over the first substrate 10 a, exposing the photopolymer resin to light such as ultraviolet light with a mask(not shown) having a plurality of micro patterns, partially developing the photopolymer resin exposed to light whereby a surface of the photopolymer resin being continually bent. In that processes, two regions to be developed or undeveloped are determined by the micro patterns of the mask. Further, a size of the region to be developed is 0.1-0.5d preferably wherein the d is thickness of the photoresist layer 22 and it's size is in 1-5 micrometer. A bent shape of the surface is determined by exposing time of light and/or developing time.

[0025] The reflection electrode 26 is formed by depositing a metal such as Al or Ag by evaporation or sputtering methods on the photoresist layer 22, at this time, the reflection electrode 26 is electrically coupled to the drain electrode 19 b through a contact hole 28. Further, the neighboring reflection electrodes on the gate and data bus lines 11, 20 are electrically insulated from each other.

[0026] A mark 24 in the drawing represents a black matrix, the black matrix 24 is formed by depositing a material such as a black resin at an open region on the gate and data bus lines 11, 20.

[0027] The first and second alignment layer 30 a, 30 b are formed by rubbing method using polyimide, polyamide, polyvinylalcohol, polyamic acid, or Sio2 and/or photo-alignment method using a photo-alignment material such as polysiloxanecinnamate, polyvinylcinnamate, or celluosecinnamate. Further in case the photo-alignment method, it is possible to expose UV light to at least one surface of the substrates using non-polarized light or partially polarized light.

[0028] The counter electrode 29 is formed by depositing a transparent metal such as ITO(indium tin oxide) by sputtering method.

[0029]FIG. 2A is a plan view of an LCD in accordance with a second embodiment of the present invention, and FIG. 2B is a section view in accordance with A-A line of FIG. 2A.

[0030] The second embodiment of the present invention proceeds in the same manner as for the first embodiment except that the reflection electrode 26 on the TFT is removed and the black matrix 24 is extended onto a removed region of the reflection electrode so as to prevent from an abnormal electric field which may be generated on the TFT.

[0031]FIG. 3 is a section view in accordance with B-B line of FIG. 1A and FIG. 2A, as shown in the drawing, some parts of the data bus line 20 on the gate insulator 14 covered by the neighboring reflection electrodes, the black matrix 24 is formed on the open region between the neighboring reflection electrodes. By this structure, light leakage on the open region is prevented.

[0032] According to the present invention, it is possible to achieve a reflective-type LCD having a superior efficiency because the black matrix is on the phoresist layer.

[0033] Further, it is possible to manufacture the reflective-type LCD with simple processes.

[0034] Other embodiments of the invention will be apparent to those skilled in the art from consideration of the specification and practice of the invention disclosed herein.

[0035] It is intended that the specification and examples be considered as exemplary only, with the true scope and spirit of the invention being indicated by the following claims and their equivalents.

Classifications
U.S. Classification349/44
International ClassificationG02F1/1335, G02F1/1362
Cooperative ClassificationG02F1/136209, G02F1/133553, G02F1/136286
European ClassificationG02F1/1335R, G02F1/1362B
Legal Events
DateCodeEventDescription
Mar 27, 2014FPAYFee payment
Year of fee payment: 12
Mar 18, 2010FPAYFee payment
Year of fee payment: 8
Oct 17, 2008ASAssignment
Owner name: LG DISPLAY CO., LTD., KOREA, REPUBLIC OF
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:021754/0230
Effective date: 20080304
Owner name: LG DISPLAY CO., LTD.,KOREA, REPUBLIC OF
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100203;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100209;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100211;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100223;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100225;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100302;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100309;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100316;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100323;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100330;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100406;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100413;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100420;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100427;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100504;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100511;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100518;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;US-ASSIGNMENT DATABASE UPDATED:20100525;REEL/FRAME:21754/230
Free format text: CHANGE OF NAME;ASSIGNOR:LG.PHILIPS LCD CO., LTD.;REEL/FRAME:21754/230
Jan 14, 2008ASAssignment
Owner name: LG.PHILIPS LCD CO., LTD., KOREA, REPUBLIC OF
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LG ELECTRONICS INC.;REEL/FRAME:020385/0124
Effective date: 19990921
Mar 13, 2006FPAYFee payment
Year of fee payment: 4
Sep 29, 1999ASAssignment
Owner name: LG. PHILIPS LCD CO., LTD., KOREA, DEMOCRATIC PEOPL
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LG ELECTRONICS, INC.;REEL/FRAME:010281/0291
Effective date: 19990921
Sep 8, 1998ASAssignment
Owner name: LG ELECTRONICS, INC., KOREA, REPUBLIC OF
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:KIM, YONG BEOM;JUN, JAE HONG;MOON, JEONG MIN;AND OTHERS;REEL/FRAME:009441/0732
Effective date: 19980826