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Publication numberUS20020076937 A1
Publication typeApplication
Application numberUS 09/924,092
Publication dateJun 20, 2002
Filing dateAug 8, 2001
Priority dateDec 19, 2000
Also published asUS6429143
Publication number09924092, 924092, US 2002/0076937 A1, US 2002/076937 A1, US 20020076937 A1, US 20020076937A1, US 2002076937 A1, US 2002076937A1, US-A1-20020076937, US-A1-2002076937, US2002/0076937A1, US2002/076937A1, US20020076937 A1, US20020076937A1, US2002076937 A1, US2002076937A1
InventorsMasayuki Endo, Masaru Sasago
Original AssigneeMasayuki Endo, Masaru Sasago
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Pattern formation method
US 20020076937 A1
Abstract
An anti-reflection film of an organic compound is formed on a substrate. The anti-reflection film is weakened by carrying out plasma processing on the anti-reflection film, and then, a resist film is formed on the weakened anti-reflection film. The resist film is subjected to pattern exposure and development so as to form a resist pattern from the resist film. The anti-reflection film is dry etched by using the resist pattern as a mask, so as to pattern the anti-reflection film.
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Claims(2)
What is claimed is:
1. A pattern formation method comprising the steps of:
forming an anti-reflection film of an organic compound on a substrate;
weakening said anti-reflection film by subjecting said anti-reflection film to plasma processing;
forming a resist film on said weakened anti-reflection film;
forming a resist pattern from said resist film by subjecting said resist film to pattern exposure and development; and
patterning said anti-reflection film by dry etching said anti-reflection film with said resist pattern used as a mask.
2. The pattern formation method of claim 1,
wherein said plasma processing is carried out by using plasma seed including oxygen or fluorine.
Description
BACKGROUND OF THE INVENTION

[0001] The present invention relates to a pattern formation method for patterning an anti-reflection film of an organic compound by etching the anti-reflection film with a resist pattern used as a mask.

[0002] In accordance with recent development in refinement of semiconductor devices, it has become significant in the fabrication process for semiconductor devices and the like to reduce exposing light reflecting from a substrate for improving accuracy of a resist pattern. Therefore, an anti-reflection film is formed between an etch target film and a resist pattern.

[0003] An anti-reflection film may be formed from an organic compound or an inorganic compound, but an anti-reflection film of an organic compound is frequently used because it can be formed by spin coating by using the same apparatus as that used for forming a resist film.

[0004] A conventional pattern formation method described in, for example, Japanese Laid-Open Patent Publication Nos. 8-153704 and 2000-77386 will now be described with reference to FIGS. 3A through 3C and 4A through 4C.

[0005] First, an anti-reflection film 2 of an organic compound is formed on a semiconductor substrate 1 as shown in FIG. 3A, and a resist film 3 with a thickness of 0.4 μm is formed on the anti-reflection film 2 as shown in FIG. 3B.

[0006] Next, the resist film 3 is irradiated with ArF excimer laser 5 through a photomask 4 for pattern exposure as shown in FIG. 3C, and the resultant semiconductor substrate 1 is subjected to post-exposure bake (PEB) carried out at, for example, 105 for 90 seconds as shown in FIG. 4A.

[0007] Then, the resist film 3 is developed with an alkaline developer after the PEB, thereby forming a line and space resist pattern 3A of 0.15 μm as shown in FIG. 4B.

[0008] Subsequently, the anti-reflection film 2 is dry etched by using the resist pattern 3A as a mask, thereby forming an anti-reflection film pattern 2A from the anti-reflection film 2 as shown in FIG. 4C.

[0009] Since exposing light recently has a shorter wavelength, there arises necessity for increasing the anti-reflection function of the anti-reflection film 2, and therefore, it is recently necessary to form the anti-reflection film 2 in a large thickness of approximately 0.1 μm.

[0010] Accordingly, during the procedure for forming the anti-reflection film pattern 2A through the dry etching of the anti-reflection film 2 with the resist pattern 3A used as the mask, the resist pattern 3A is largely damaged. Therefore, after patterning the anti-reflection film 2 by the dry etching, the shape of the resist pattern 3A is frequently degraded as shown in FIG. 4C.

[0011] When the etch target film formed on the semiconductor substrate 1 is etched by using the resist pattern 3A in such a degraded shape as a mask, the shape of the pattern formed from the etch target film is also disadvantageously degraded.

SUMMARY OF THE INVENTION

[0012] In consideration of the aforementioned conventional problem, an object of the invention is suppressing degradation in the shape of a resist pattern caused in conducting dry etching on an anti-reflection film of an organic compound with a large thickness by using the resist pattern as a mask.

[0013] The pattern formation method of this invention comprises the steps of forming an anti-reflection film of an organic compound on a substrate; weakening the anti-reflection film by subjecting the anti-reflection film to plasma processing; forming a resist film on the weakened anti-reflection film; forming a resist pattern from the resist film by subjecting the resist film to pattern exposure and development; and patterning the anti-reflection film by dry etching the anti-reflection film with the resist pattern used as a mask.

[0014] In the pattern formation method of this invention, the anti-reflection film is weakened through the plasma processing before forming the resist film, and then, the anti-reflection film is dry etched by using the resist pattern as a mask. Therefore, the anti-reflection film has been weakened before being patterned. Accordingly, the anti-reflection film can be easily dry etched, which suppresses degradation of the shape of the resist pattern. As a result, the etch target film can be etched by using the resist pattern in a good shape as a mask, and hence, a pattern having a good shape can be formed from the etch target film.

[0015] In the pattern formation method, the plasma processing is preferably carried out by using plasma seed including oxygen or fluorine.

[0016] Thus, the anti-reflection film can be definitely weakened.

BRIEF DESCRIPTION OF THE DRAWINGS

[0017]FIGS. 1A, 1B, 1C and 1D are cross-sectional views for showing procedures in a pattern formation method according to an embodiment of the invention;

[0018]FIGS. 2A, 2B and 2C are cross-sectional views for showing other procedures in the pattern formation method according to the embodiment of the invention;

[0019]FIGS. 3A, 3B and 3C are cross-sectional views for showing procedures in a conventional pattern formation method; and

[0020]FIGS. 4A, 4B and 4C are cross-sectional views for showing other procedures in the conventional pattern formation method.

DETAILED DESCRIPTION OF THE INVENTION

[0021] A pattern formation method according to a preferred embodiment of the invention will now be described with reference to FIGS. 1A through 1D and 2A through 2C.

[0022] First, as shown in FIG. 1A, an anti-reflection film 11 (such as AR19 manufactured by Shipley Far East Co., Ltd.) of an organic compound having a thickness of, for example, 100 nm (0.1 μm) is formed on a semiconductor substrate 10.

[0023] Next, as shown in FIG. 1B, the anti-reflection film 11 is irradiated with plasma 12 of a gas including oxygen or fluorine. Thus, the anti-reflection film 11 is weakened because its density is lowered.

[0024] The plasma processing may be carried out under any of the following two conditions:

[0025] In the first condition, the anti-reflection film 11 is irradiated with the plasma 12 including plasma seed of oxygen for approximately 5 seconds in a vacuum chamber kept at a degree of vacuum of 1.33 Pa with an oxygen gas introduced into the vacuum chamber at a volume flow rate per minute of 15 ml in a normal condition under application of high frequency power of 10 W. Thus, the anti-reflection film 11 is reduced in its thickness by approximately 8.5 nm and can be definitely weakened.

[0026] In the second condition, the anti-reflection film 11 is irradiated with the plasma 12 including plasma seed of fluorine for approximately 15 seconds in a vacuum chamber kept at a degree of vacuum of 1.33 Pa with a CHF3 gas introduced into the vacuum chamber at a volume flow rate per minute of 20 ml in a normal condition under application of high frequency power of 50 W. Thus, the anti-reflection film 11 is reduced in its thickness by approximately 6.5 nm and can be definitely weakened.

[0027] Next, as shown in FIG. 1C, a resist film 13 (such as PAR-101 manufactured by Sumitomo Chemical Co., Ltd.) with a thickness of 0.4 μm is formed on the anti-reflection film 11 having been weakened by the plasma processing.

[0028] Then, as shown in FIG. 1D, the resist film 13 is irradiated with ArF excimer laser 15 at numerical aperture (NA) of 0.60 through a photomask 14 for pattern exposure. Thereafter, as shown in FIG. 2A, the resultant semiconductor substrate 10 is subjected to post-exposure bake (PEB) carried out at, for example, 105 for 90 seconds.

[0029] Subsequently, as shown in FIG. 2B, the resist film 13 is developed with an alkaline developer after the PEB, thereby forming a line and space resist pattern 13A of 0.15 μm.

[0030] Next, as shown in FIG. 2C, the weakened anti-reflection film 11 is dry etched by using the resist pattern 13A as a mask, thereby forming an anti-reflection film pattern 11A from the anti-reflection film 11.

[0031] Since the anti-reflection film 11 having been weakened by the plasma processing is thus dry etched by using the resist pattern 13A as a mask, the anti-reflection film 11 can be easily dry etched into the pattern although it is made from an organic compound similarly to the resist pattern 13A and has a large thickness. Therefore, the etch target film formed on the semiconductor substrate 10 can be etched by using the resist pattern 13A in a good shape as a mask, resulting in forming the pattern in a good pattern shape from the etch target film.

Classifications
U.S. Classification438/725, 438/952, 257/E21.029, 257/E21.256, 438/928
International ClassificationH01L21/027, H01L21/3065, H01L21/461, G03F7/38, H01L21/302, H01L21/311, G03F7/09
Cooperative ClassificationG03F7/091, H01L21/31138, H01L21/0276
European ClassificationH01L21/027B6B4, H01L21/311C2B, G03F7/09A
Legal Events
DateCodeEventDescription
Mar 14, 2014REMIMaintenance fee reminder mailed
Jan 6, 2010FPAYFee payment
Year of fee payment: 8
Jan 13, 2006FPAYFee payment
Year of fee payment: 4
Aug 8, 2001ASAssignment
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., JAPAN
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ENDO, MASAYUKI;SASAGO, MASARU;REEL/FRAME:012065/0457
Effective date: 20010730
Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 1006, OAZ
Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:ENDO, MASAYUKI /AR;REEL/FRAME:012065/0457