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Publication numberUS20030030051 A1
Publication typeApplication
Application numberUS 09/927,027
Publication dateFeb 13, 2003
Filing dateAug 9, 2001
Priority dateAug 9, 2001
Also published asUS6768170, US20030151045, WO2003088312A2, WO2003088312A3
Publication number09927027, 927027, US 2003/0030051 A1, US 2003/030051 A1, US 20030030051 A1, US 20030030051A1, US 2003030051 A1, US 2003030051A1, US-A1-20030030051, US-A1-2003030051, US2003/0030051A1, US2003/030051A1, US20030030051 A1, US20030030051A1, US2003030051 A1, US2003030051A1
InventorsMing Zhou
Original AssigneeInternational Rectifier Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Superjunction device with improved avalanche capability and breakdown voltage
US 20030030051 A1
A superjunction device has a plurality of equally spaced P columns in an N epitaxial layer. The concentration of the P type columns is made greater than that needed for maintaining charge balance in the N epi region and the P columns thereby to increase avalanche energy. An implant dose of 1.1E13 or greater is used to form the P columns.
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What is claimed is:
1. A super unction device comprising a flat thin monocrystalline silicon die having an N+ body and a junction-receiving epitaxially grown N layer on top of said N+ body; a plurality of equally spaced P type columns of similar cross-section extending into said epitaxial layer for a substantial portion of the thickness of said epitaxial layer and perpendicularly to the top and bottom surfaces of said die; said P type columns having a P type concentration which is intentionally greater than that needed for change balance between said P columns and the surrounding N epitaxial silicon.
2. The device of claim 1, which further includes a MOSgate structure formed on the top surface of said N epitaxial layer of silicon.
3. The device of claim 2, wherein said MOSgate structure includes a source region in the top of each of said P columns and defining invertible channel regions in said P columns and a gate structure spanning across said invertible channel regions and said N epitaxial silicon.
4. The device of claim 1, wherein said P column is formed from boron implants having a dose of greater than about 1.1E13.
5. The device of claim 2, wherein said P column is formed from boron implants having a dose of greater than about 1.1E13.
6. The device of claim 3, wherein said P column is formed from boron implants having a dose of greater than about 1.1E13.
  • [0001]
    This invention relates to semiconductor devices and more specifically relates to a superjunction type power MOSFET with increased avalanche energy.
  • [0002]
    Superjunction power MOSFETs are well known. The static and dynamic characteristics of such devices are also described in “Analysis of the Effect of Charge Imbalance on the Static and dynamic Characteristics of the Superjunction MOSFET by Proveen M. Shenoy, Anup Bhalla and Gray M. Dolay, Proceeding of the ISPSD '99, pp. 99-102, June 1999.
  • [0003]
    In such devices, the avalanche capability, sometimes called “ruggedness” is determined mainly by the means of preventing the turn on of the inherent parasitic bipolar transistor in a DMOS type MOSgated device. However, in the superjunction device, the concentration of the P type columns is chosen to maintain charge balance in the active area of the epitaxial silicon body material. This requirement lowers the avalanche capability of the device because the high field locates in the N type region of the epitaxial silicon layer, resulting in a higher base resistance Rb 1 in the avalanche current path through the N type region and to the N+ source. Thus, in some designs, avalanche energy, that is, the amount of energy which is produced in avalanche without failure, has been as low as 50 millijoules. Attempts to increase this energy results in a reduction of the device breakdown voltage.
  • [0004]
    It would be desirable to increase the avalanche energy of a superjunction device without degrading the breakdown voltage.
  • [0005]
    In accordance with the invention, the P column dose in a superjunction device is increased to a value intentionally higher than that required for charge balance in apparent disregard of the accepted theory and design rules for superjunction devices. By doing so, the high field location moves from the N region to the P column, and, therefore, a lower Rb 1 or lateral base resistance is experienced by the avalanche current through the P column to the source. Thus, the avalanche capability of the device is significantly improved (by a factor greater than 10) without degrading breakdown voltage.
  • [0006]
    For example, in a prior design using an N epi layer concentration of 1.26E15 and a P column dose of about 1E13, the P column dose was increased to 1.1E13 and avalanche energy was increased from 50 millijoules to 2500 millijoules. The P column dose to be used is dependent on die size and it was found that a higher dose can be used on smaller area die. Thus, a P column dose of 1.2E13 was used for a die of size 110140 mils; while a dose of 1.1E13 was used on larger die of 257330 mils and 315450 mils. In all cases, a dose of 1.1E13 to 1.3E13 can be used to improve avalanche capability without adversely affecting breakdown voltage.
  • [0007]
    [0007]FIG. 1 is a cross-section of a small area of a superjunction die and is a cross-section of a portion of FIG. 2 taken across section line 2-2 in FIG. 1.
  • [0008]
    [0008]FIG. 2 is a view of the top of the silicon in FIG. 1, take across section line 1-1 in FIG. 2 to show the topology of the P type pedestals or channels.
  • [0009]
    Referring to FIGS. 1 and 2, there is shown a silicon die having an N+ body 10 which has an epitaxially deposited N top layer 11 formed thereon. Note that the term epitaxial layer means a layer of silicon which was grown by an epitaxial process. Layer 10 is about 500 microns thick and layer 11 is about 17 microns thick for a 500 volt device. The N concentration is typically about 1.26 atoms/cm3 (or about 3.5 ohm cm).
  • [0010]
    A plurality of spaced P columns 12 are formed in layer 11 as shown. P columns may have a depth of about 6.4 microns and a center-to-center spacing of about 15 microns. The P columns are shown as hexagonal in section, but they can have any other shape and; if desired, may be rectangular, square, or even have a parallel elongated stripe form. When hexagonal as shown, the hexagonal columns may be 6.4 microns wide when measured perpendicular to parallel sides, and may be spaced by about 8.6 microns from all adjacent columns.
  • [0011]
    The P columns may be fabricated by sequentially growing N epitaxial layers about 6.4 microns thick and diffusing the hexagonal P layers which are aligned with one another to build the full P column. As well be later emphasized, the P columns 10 are formed by implants of boron at 80 KeV and at a dose of 1.1E13 or greater, but in accordance with the invention, will have a value which is greater than that need for charge balance between the N epitaxial silicon 11 and the P columns 12.
  • [0012]
    After forming the P columns 12, a gate oxide and a conductive polysilicon lattice 13 (atop the gate oxide) is formed in the lattice space between columns 12. A shallow N+ source 14 is then formed into the top of each column 12 as by implantation and diffusion, to define channel regions under the gate 13. A thin P+ contact layer 15 is formed beneath each source layer 14. The top of polysilicon gates 13 are capped by an interlayer oxide 16 and a shallow trench is formed through sources 14 and into P+ regions 15. An aluminum source electrode 17 is then formed atop the upper surface of the die, making contact with source regions 14 and P+ regions 15. The top of source 17 is covered by a suitable passivation layer 18. A drain electrode 20 is formed on the bottom of die 10.
  • [0013]
    In accordance with the invention the concentration in the P column is greater that needed for charge balance to the surrounding N epitaxial silicon. In particular and with an N region resistivity of 3.5 ohm cm and the dimensions given, a P concentration defined by an implant dose of 1.01013 atoms/cm2 would be used in the prior art. In accordance with the invention however, and for a die of 315450 mils, the dose of 1.1E13 for columns 12 increased avalanche energy over 10 fold. For a smaller die of 110140 mils, a dose of 1.21013 atoms/cm2 can be used with the same benefit.
  • [0014]
    Although the present invention has been described in relation to particular embodiments thereof, many other variations and modifications and other uses will become apparent to those skilled in the art. It is preferred, therefore, that the present invention be limited not by the specific disclosure herein.
Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7829417 *Nov 9, 2010Nec Electronics CorporationSemiconductor apparatus and method of manufacturing semiconductor apparatus
US20080299726 *May 29, 2008Dec 4, 2008Nec Electronics CorporationSemiconductor apparatus and method of manufacturing semiconductor apparatus
U.S. Classification257/15, 257/E29.259, 257/E29.066
International ClassificationH01L29/78, H01L29/06, H01L29/10
Cooperative ClassificationH01L29/0634, H01L29/1095, H01L29/41766, H01L29/7802
European ClassificationH01L29/78B2, H01L29/06B2B3R2
Legal Events
Aug 9, 2001ASAssignment
Effective date: 20010801