US 20030139833 A1 Abstract A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.
Claims(51) 1. A method, in a computer, for determining the optimum process point for fabricating a device feature of a critical dimension, comprising the steps of:
selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension; calculating modeled behavior values and their rates of change over a range of corresponding values of a first process parameter; selecting an optimum threshold value having the largest rate of change around said measuring point; and determining the first process parameter value corresponding to the optimum threshold value. 2. The method of 3. The method of 4. The method of 5. The method of selecting a point on one side of the measuring point; calculating a value of the modeled behavior at each of the points; and calculating a slope through each of the points, wherein the slope is a function of the values of the modeled behavior at each point. 6. The method of 7. The method of decrementing the value of the first process parameter; calculating the value of the modeled behavior at the measuring point; determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value; determining the value of the modeled behavior at a location offset from the initial position in a second direction, opposite to the first direction, by the second value; and calculating the rate of change of the modeled behavior corresponding to the first process parameter value. 8. The method of calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and dividing the difference of the modeled behavior values by twice the second value. 9. A method, in a computer, for determining the optimum process point for fabricating a device feature of a critical dimension, comprising the steps of:
selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension; calculating modeled behavior values and their rates of change over a range of corresponding values of a first process parameter; selecting an optimum threshold value having the largest rate of change around said measuring point; determining the first process parameter value corresponding to the optimum threshold value; and providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 10. The method of 11. The method of 12. The method of 13. The method of 14. A method, in a computer, for determining the optimum process point for fabricating a device feature of a critical dimension, comprising the steps of:
selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension; calculating model values and their rates of change over a range of corresponding mask material edge positions; and selecting an optimum threshold value having the largest rate of change around said measuring point. 15. The method of 16. The method of selecting a point on one side of the measuring point; calculating a value of the modeled behavior at each of the points; and calculating a slope through each of the points, wherein the slope is a function of the values of the modeled behavior at each point. 17. The method of shifting the mask material edge position by a first value; calculating the value of the modeled behavior at the measuring point; determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value; determining the value of the modeled behavior at a location offset from the measuring point in a second direction, opposite the first direction, by the second value; and calculating the rate of change of the threshold corresponding to the mask material edge position. 18. The method of calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and dividing the difference of the modeled behavior values by twice the second value. 19. The method of providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 20. A method, in a computer, for determining the optimum process point for fabricating a device feature of a critical dimension, comprising the steps of:
calculating modeled behavior values and their rates of change over a range of corresponding mask material edge positions, comprising the steps of:
shifting the mask material edge position by a first value;
calculating the value of the modeled behavior at the measuring point;
determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value;
determining the value of the modeled behavior at a location offset from the measuring point in a second direction, opposite the first direction, by the second value; and
calculating the rate of change of the threshold, comprising the steps of:
calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and
dividing the difference of the modeled behavior values by twice the second value;
selecting an optimum threshold value having the largest rate of change; and providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 21. A method, in a computer, for determining the optimum process point for fabricating a device feature of critical dimension, comprising the steps of:
selecting a plurality of measuring points, wherein each measuring point corresponds to the feature of the critical dimension; calculating values and rates of change of modeled behavior over a range of values of a first process parameter for each measuring point; selecting an optimum threshold value having the largest rate of change for each measuring point; selecting a threshold value from the plurality of optimal threshold values; and providing the selected threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 22. The method according to 23. The method according to 24. A computer program product comprising a memory having computer program logic recorded thereon for enabling a processor in a computer system to determine the optimum process point for fabricating a device feature of a critical dimension, the computer program logic comprising:
a first calculating process enabling the processor to calculate a modeled behavior value associated with the device feature and a rate of change of the modeled behavior value over a range of corresponding values of a first process parameter; a second calculating process enabling the processor to select an optimum threshold value; and a determining process enabling the processor to determine the value of the first process parameter corresponding to the optimum threshold value. 25. The computer program product of a providing process enabling the processor to provide the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects. 26. The computer program according to 27. A computer system, comprising:
a processor; a memory operatively coupled to the processor; a first calculating process enabling the processor to calculate a modeled behavior value associated with the device feature and a rate of change of the modeled behavior value over a range of corresponding values of a first process parameter; a second calculating process enabling the processor to select the optimum threshold value; and a determining process enabling the processor to determine the value of the first process parameter corresponding to the optimum threshold value. 28. The computer system of 29. The computer system of 30. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of mask material edge positions; and calculating rates of change of model values over a range of the mask material edge positions. 31. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of process parameters representative of focus; and calculating rates of change of model values over a range of the process parameters representative of focus. 32. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of process parameters representative of numerical aperture; and calculating rates of change of model values over a range of the process parameters representative of numerical aperture. 33. A simulation method, comprising:
simulating a processing step for a wafer; calculating model values and their rates of change over a range of values of a processing parameter; determining an optimum value having a largest calculated rate of change; and determining the process parameter corresponding to the optimum value. 34. The method of 35. The method of 36. The method of 37. The method of 38. The method of 39. The method of 40. The method of 41. The method of 42. The method of 43. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of attenuated phase shift mask material edge positions; and calculating rates of change of model values over the range of the attenuated phase shift mask material edge positions. 44. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of alternating aperture phase shift mask material edge positions; and calculating rates of change of model values over the range of the alternating aperture phase shift mask material edge positions. 45. A simulation method for determining an optimum process point for fabricating a device feature of a critical dimension, comprising:
calculating model values over a range of chromeless phase shift mask material edge positions; and calculating rates of change of model values over the range of the chromeless phase shift mask material edge positions. 46. A simulation method, comprising:
simulating a lithography processing step for a substrate; calculating model values and their rates of change over a range of values of a processing parameter; determining an optimum value having a largest calculated rate of change; and determining the process parameter corresponding to the optimum value. 47. The method of 48. The method of 49. The method of 50. The method of 51. The method of Description [0001] This application is a Divisional of U.S. application Ser. No. 09/768,109, filed Jan. 23, 2001, which is a Continuation of U.S. application Ser. No. 09/019,208, filed Feb. 5, 1998 and issued as U.S. Pat. No. 6,178,360, both of which are incorporated herein. [0002] The present invention relates generally to a low cost method and system for enhancing the tolerances of process steps used to fabricate integrated circuits and discrete devices, and more specifically to a low cost method for determining the optimum latitude of the process steps using computer modeling. [0003] Devices and integrated circuits are fabricated with multiple processing steps. Integrated circuits are often fabricated with one or more devices, which may include diodes, capacitors, and different varieties of transistors. These devices often have microscopic features that can only be manufactured with critical processing steps that require careful alignment of equipment used to build the devices. [0004] Critical processing steps are used to fabricate device features having small dimensions, known as critical dimensions. Critical dimensions of a device often define the performance of the device and its surrounding circuitry. For example, gate length is a critical dimension of a field effect transistor and establishes, in part, the maximum operating frequency of the transistor. [0005] If a critical processing step is not reproducible, the critical dimension cannot be repeatably obtained. Then, the performance of many devices and integrated circuits may not be acceptable. As a result, processing yields decrease and production costs increase. It is therefore desirable to enhance the latitude of processing steps, particularly critical processing steps. [0006] A critical dimension can be measured at different stages of device and integrated circuit fabrication. Fabrication may include many successive steps. First, energy, such as light, is exposed through a mask onto a masking layer, such as resist. As shown in FIG. 1( [0007] Conventionally, enhanced processing latitude for critical dimensions are obtained by modifying the exposure (step [0008] The mask [0009] Conventionally, enhanced processing latitude for critical dimensions [0010] Subsequently, one test pattern is chosen that demonstrates the least sensitivity to variations in process parameters. The chosen test pattern must form a feature with an accurate critical dimension [0011] Typically, the mask features are formed with distortion on a device or an integrated circuit as a result of nonlinear process effects. Nonlinear process effects occur during many processing steps, including exposure (step [0012] Models may consist of one or more kernels, typically three-dimensional functions. When a model is convolved with a pattern, the behavior of that pattern at a specific point may be predicted. If many points are taken, a three-dimensional behavior can be predicted. A model threshold is a value that, when subtracted from the value of the model, can convert the modeled behavior to a binary behavior. For example, when a threshold of 0.3 is chosen, the model is convolved with the pattern and a value of 0.35 is returned. Subtracting 0.30 from 0.35 suggests that the pattern has a positive behavior at this point. Additionally, a shifted behavior can be used by retaining the calculated differential magnitude, e.g., 0.05. This information can be interpreted in any number of ways, depending on the specific application. [0013] Conventionally, after process latitudes have been coarsely enhanced by experimentally choosing a test pattern and process parameters, the definition of features on the mask may be modified by proximity effect correction (PEC). Generally, PEC can be accomplished either manually using experimental data or using simulation software for feedback, or automatically with software using a rules-based method, or a model-based method. Examples of such software are Optimask from Vector Technology (Brookline, Mass.), Proteus from Precim Company (Portland, Oreg.), and OPRX from Trans Vector Technology (Camarillo, Calif.). Using a model-based method, the kernels are convolved with the original mask layout, compared to a threshold to determine the distortion, and a new mask pattern is created whose features will have diminished distortion when formed in an integrated circuit or device. The use of model-based PEC is well known to persons skilled in the art. The use of models to diminish distortions in fabricated features is further described in “Fast Sparse Aerial Image Calculation for OPC,” 15th Annual Symposium on Photomask Technology and Management, 1995, by N. Cobb et al., and “Spatial Filter Models to Describe IC Lithographic Behavior,” the Optical Microlithography SPIE 1997 Proceedings, Vol. 3051, pp. 469-478, by J. P. Stirniman et al., which are hereby incorporated by reference. [0014] The specific process parameters determined by experiment, described previously, can be supplied to proximity effect correction software. To reduce cost and enhance accuracy, it is desirable to automatically transfer the process parameters to the proximity effect correction software. [0015] The present invention is a system and method for enhancing process latitude, or tolerance, in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters. [0016] The method may be implemented in a computer including a processor and a memory. A first calculating process enables the processor to calculate modeled behavior values and their rates of change over a range of corresponding values of the first process parameter. A second calculating process enables the processor to select the optimum threshold. Proximity correction is performed using the optimum threshold. Proximity correction can be performed manually using simulation software for feedback, or automatically with software. Because the method is implemented in a computer, the model parameters can be determined efficiently over finer incremental values of the first process parameter. Therefore, the parameters can be more precisely and inexpensively determined. [0017] In one embodiment, the first process parameter may be mask material edge position in a computer representation of a mask. In one such embodiment, for instance, the optimum threshold is provided to a proximity effect correction process in which the computer representation of the mask is modified to compensate for proximity effects. As a result, the masks can be automatically or semi-automatically sequentially optimized for process latitude and proximity effect correction with a single computer program. [0018] In a second embodiment, the first process parameter may be an optical parameter of a stepper, for example, numerical aperture. In this embodiment, the numerical aperture of the model is varied to determine the value that corresponds to the maximum rate of change of the modeled behavior. The maximum rate of change of the modeled behavior and its corresponding optimum threshold are provided to a proximity effect correction process in which the computer representation of the mask is modified to compensate for proximity effects. [0019] Further features and advantages of the present invention, as well as the structure and operation of the various embodiments of the present invention, are described in detail below with reference to the accompanying drawings. [0020] The present invention is described with reference to the accompanying drawings. In the drawings, like reference numbers indicate identical or functionally similar elements. Additionally, the leftmost digit(s) of a reference number identifies the drawing in which the reference number first appears. [0021]FIG. 1( [0022]FIG. 1( [0023]FIG. 1( [0024]FIG. 1( [0025]FIG. 2 is a cross-sectional view of a prior art photolithography system; [0026]FIG. 3( [0027]FIG. 3( [0028]FIG. 4( [0029]FIG. 4( [0030]FIG. 4( [0031]FIG. 5( [0032]FIG. 5( [0033]FIG. 6 is a block diagram of one embodiment of a computer system. [0034] In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration of specific preferred embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable persons skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present inventions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present inventions is defined only by the appended claims. [0035] There are a large number of combinations of modeled behavior values and mask material edge position, or other process variables, that can provide a desired wafer edge position in a certain situation. Not all of these combinations have desirable process parameters or behaviors. The present invention is a system and method of selecting the best modeled behavior value, or threshold, based upon the contrast or slope of the model behavior. Given this threshold, a proximity effect correction program will yield the previously determined mask material edge position. When a mask [0036] In a general sense, what is described below is a computer-implemented method for determining an optimal process parameter for the fabrication of devices and integrated circuits comprising selecting an initial position corresponding to a feature of critical dimension. Then, modeled behavior values and their rates of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold corresponding to the largest rate of change of the modeled behavior is selected. Finally, proximity correction is performed using the optimal threshold and, possibly, additional information. The present invention may arrive at an optimal threshold and, optionally, corresponding process parameters by simulating one or more processing steps described above. For example, the present invention may simulate only the exposure step (step [0037] The present invention will now be described in detail. In one embodiment, the first process parameter is the position of a mask material edge in a mask. In such an embodiment, the optimal threshold is determined as follows. First, an initial position of a mask material edge [0038] Then, the value and rate of change of a modeled behavior at the measuring point [0039] In a photolithographic process, for example, the first process parameter may be the edge position [0040] Next, the optimum threshold is selected (step [0041] Then, the optimum threshold and, optionally, the corresponding first process parameter, are provided to a proximity effect correction (PEC) process (step [0042] The value and rate of change of the modeled behavior with respect to the measuring point [0043] Next, it is determined whether the value and rate of change of the modeled behavior has been calculated for a first process parameter value equal to the first value (step [0044] It should be noted that the change in the first process parameters does not have to be symmetric around the initial value of the first process parameter. In addition, the step by which the first process parameter is changed in determining the optimum threshold does not have to be constant. [0045] Operation of this exemplary embodiment of the present invention will now be described, as shown in FIG. 4( [0046] Modifying the mask material edge position on the mask [0047] Exemplary results of performing the method described above will now be discussed. In this example, an optical model process is used. FIG. 5B illustrates a plot of threshold [0048] The optimum threshold value [0049] In addition, multiple models can be considered in the same way. Multiple models may include, for example, models for out-of-focus conditions, or different illumination conditions. [0050] The aforementioned methods may be implemented in a computer system. FIG. 6 illustrates an exemplary computer system [0051] The present invention is an apparatus and method of determining the optimum process point in device and integrated circuit fabrication. The present invention uses a computer to increase the accuracy and reduce the cost of determining the best process point. Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement which is calculated to achieve the same purpose may be substituted for the specific embodiments shown. This patent is intended to cover any adaptations or variations of the present invention. For example, the first process parameter may represent the focus, numerical aperture, exposure time, or on or off axis settings of a stepper. Also, the present invention can be implemented with a variety of masks, including, but not limited to, attenuated phase shift masks, alternating aperture phase shift masks, and chromeless phase shift masks. Also, other lithography techniques may be used, including, but not limited to, X-ray, ion, and electron beam lithography. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof. Referenced by
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