Publication number | US20030139833 A1 |

Publication type | Application |

Application number | US 10/357,894 |

Publication date | Jul 24, 2003 |

Filing date | Feb 3, 2003 |

Priority date | Feb 5, 1998 |

Also published as | US6178360, US6519501, US20010029403 |

Publication number | 10357894, 357894, US 2003/0139833 A1, US 2003/139833 A1, US 20030139833 A1, US 20030139833A1, US 2003139833 A1, US 2003139833A1, US-A1-20030139833, US-A1-2003139833, US2003/0139833A1, US2003/139833A1, US20030139833 A1, US20030139833A1, US2003139833 A1, US2003139833A1 |

Inventors | Christophe Pierrat, James Burdorf |

Original Assignee | Micron Technology, Inc. |

Export Citation | BiBTeX, EndNote, RefMan |

Patent Citations (19), Referenced by (15), Classifications (19) | |

External Links: USPTO, USPTO Assignment, Espacenet | |

US 20030139833 A1

Abstract

A system and method for enhancing process latitude (tolerances) in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.

Claims(51)

selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension;

calculating modeled behavior values and their rates of change over a range of corresponding values of a first process parameter;

selecting an optimum threshold value having the largest rate of change around said measuring point; and

determining the first process parameter value corresponding to the optimum threshold value.

selecting a point on one side of the measuring point;

calculating a value of the modeled behavior at each of the points; and

calculating a slope through each of the points, wherein the slope is a function of the values of the modeled behavior at each point.

decrementing the value of the first process parameter;

calculating the value of the modeled behavior at the measuring point;

determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value;

determining the value of the modeled behavior at a location offset from the initial position in a second direction, opposite to the first direction, by the second value; and

calculating the rate of change of the modeled behavior corresponding to the first process parameter value.

calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and

dividing the difference of the modeled behavior values by twice the second value.

selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension;

calculating modeled behavior values and their rates of change over a range of corresponding values of a first process parameter;

selecting an optimum threshold value having the largest rate of change around said measuring point;

determining the first process parameter value corresponding to the optimum threshold value; and

providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects.

selecting a measuring point on a computer representation of a wafer corresponding to the feature of the critical dimension;

calculating model values and their rates of change over a range of corresponding mask material edge positions; and

selecting an optimum threshold value having the largest rate of change around said measuring point.

selecting a point on one side of the measuring point;

calculating a value of the modeled behavior at each of the points; and

calculating a slope through each of the points, wherein the slope is a function of the values of the modeled behavior at each point.

shifting the mask material edge position by a first value;

calculating the value of the modeled behavior at the measuring point;

determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value;

determining the value of the modeled behavior at a location offset from the measuring point in a second direction, opposite the first direction, by the second value; and

calculating the rate of change of the threshold corresponding to the mask material edge position.

calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and

dividing the difference of the modeled behavior values by twice the second value.

providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects.

calculating modeled behavior values and their rates of change over a range of corresponding mask material edge positions, comprising the steps of:

shifting the mask material edge position by a first value;

calculating the value of the modeled behavior at the measuring point;

determining the value of the modeled behavior at a location offset from the measuring point in a first direction by a second value;

determining the value of the modeled behavior at a location offset from the measuring point in a second direction, opposite the first direction, by the second value; and

calculating the rate of change of the threshold, comprising the steps of:

calculating a difference of the modeled behavior values ascertained during the steps of determining the values; and

dividing the difference of the modeled behavior values by twice the second value;

selecting an optimum threshold value having the largest rate of change; and

providing the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects.

selecting a plurality of measuring points, wherein each measuring point corresponds to the feature of the critical dimension;

calculating values and rates of change of modeled behavior over a range of values of a first process parameter for each measuring point;

selecting an optimum threshold value having the largest rate of change for each measuring point;

selecting a threshold value from the plurality of optimal threshold values; and

providing the selected threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects.

a first calculating process enabling the processor to calculate a modeled behavior value associated with the device feature and a rate of change of the modeled behavior value over a range of corresponding values of a first process parameter;

a second calculating process enabling the processor to select an optimum threshold value; and

a determining process enabling the processor to determine the value of the first process parameter corresponding to the optimum threshold value.

a providing process enabling the processor to provide the optimum threshold value to a proximity effect correction process which modifies the mask pattern to compensate for proximity effects.

a processor;

a memory operatively coupled to the processor;

a first calculating process enabling the processor to calculate a modeled behavior value associated with the device feature and a rate of change of the modeled behavior value over a range of corresponding values of a first process parameter;

a second calculating process enabling the processor to select the optimum threshold value; and

a determining process enabling the processor to determine the value of the first process parameter corresponding to the optimum threshold value.

calculating model values over a range of mask material edge positions; and

calculating rates of change of model values over a range of the mask material edge positions.

calculating model values over a range of process parameters representative of focus; and

calculating rates of change of model values over a range of the process parameters representative of focus.

calculating model values over a range of process parameters representative of numerical aperture; and

calculating rates of change of model values over a range of the process parameters representative of numerical aperture.

simulating a processing step for a wafer;

calculating model values and their rates of change over a range of values of a processing parameter;

determining an optimum value having a largest calculated rate of change; and

determining the process parameter corresponding to the optimum value.

calculating model values over a range of attenuated phase shift mask material edge positions; and

calculating rates of change of model values over the range of the attenuated phase shift mask material edge positions.

calculating model values over a range of alternating aperture phase shift mask material edge positions; and

calculating rates of change of model values over the range of the alternating aperture phase shift mask material edge positions.

calculating model values over a range of chromeless phase shift mask material edge positions; and

calculating rates of change of model values over the range of the chromeless phase shift mask material edge positions.

simulating a lithography processing step for a substrate;

calculating model values and their rates of change over a range of values of a processing parameter;

determining an optimum value having a largest calculated rate of change; and

determining the process parameter corresponding to the optimum value.

Description

- [0001]This application is a Divisional of U.S. application Ser. No. 09/768,109, filed Jan. 23, 2001, which is a Continuation of U.S. application Ser. No. 09/019,208, filed Feb. 5, 1998 and issued as U.S. Pat. No. 6,178,360, both of which are incorporated herein.
- [0002]The present invention relates generally to a low cost method and system for enhancing the tolerances of process steps used to fabricate integrated circuits and discrete devices, and more specifically to a low cost method for determining the optimum latitude of the process steps using computer modeling.
- [0003]Devices and integrated circuits are fabricated with multiple processing steps. Integrated circuits are often fabricated with one or more devices, which may include diodes, capacitors, and different varieties of transistors. These devices often have microscopic features that can only be manufactured with critical processing steps that require careful alignment of equipment used to build the devices.
- [0004]Critical processing steps are used to fabricate device features having small dimensions, known as critical dimensions. Critical dimensions of a device often define the performance of the device and its surrounding circuitry. For example, gate length is a critical dimension of a field effect transistor and establishes, in part, the maximum operating frequency of the transistor.
- [0005]If a critical processing step is not reproducible, the critical dimension cannot be repeatably obtained. Then, the performance of many devices and integrated circuits may not be acceptable. As a result, processing yields decrease and production costs increase. It is therefore desirable to enhance the latitude of processing steps, particularly critical processing steps.
- [0006]A critical dimension can be measured at different stages of device and integrated circuit fabrication. Fabrication may include many successive steps. First, energy, such as light, is exposed through a mask onto a masking layer, such as resist. As shown in FIG. 1(
*a*), during exposure (step**110**), the critical dimension**101**can be measured as the length of the footprint of energy**103**incident on the masking layer**102**. Any resist**102**having a minimum dose of energy**103**incident upon it is exposed. Then, the exposed masking layer is developed so that, for example, only unexposed masking layer**104**remains. During development (step**120**), the critical dimension**101**can be measured as the distance between unexposed masking layers**104**, as shown in FIG. 1(*b*). Then, material**105**not covered by the unexposed masking layer**104**is removed. The removal step (step**130**) may be accomplished with etching. The material**105**may be a base layer, such as a semiconductor substrate or wafer. During removal (step**130**), the critical dimension**101**can be measured as the distance between remaining material**105**, as shown in FIG. 1(*c*). As an alternative to removal (step**140**), a conductor**106**may be deposited between the unexposed resist**104**which is then removed, as shown in FIG. 1(*d*). The conductor**106**may form the gate of a transistor. The conductor**106**may be metal, doped polysilicon, or a combination thereof. During deposition (step**140**), the critical dimension**101**can be measured as the length of the conductor**106**. - [0007]Conventionally, enhanced processing latitude for critical dimensions are obtained by modifying the exposure (step
**110**). The exposure (step**110**) is a critical processing step also known as lithography. Optical or photolithography involves patterning the masking layer**102**with energy from light. A photolithographic system**200**is illustrated in FIG. 2. Photolithography entails exposing light**203**through a mask**208**onto the masking layer**102**. The masking layer**102**is formed on material**105**, such as a base layer, described above. - [0008]The mask
**208**is a tool used to construct a device or integrated circuit. The design of the mask is created by a human, a computer or both thereof. The mask**208**has a pattern**209**formed by a mask material**206**, such as chrome, adjacent to a translucent material**205**, such as quartz. Light**203**passes through the mask**208**where no mask material**206**is present. Typically, a lens**207**is placed between the mask**208**and the masking layer**102**to focus the light**203**onto the masking layer**102**. The light**203**exposes the mask's pattern**209**onto the masking layer**102**. The mask material**206**also defines a critical dimension**201**of the mask**208**. The critical dimension**201**of the mask**208**corresponds to the critical dimensions**101**, described above, on a wafer. However, the critical dimension**201**of the mask**208**may not be equivalent to the critical dimension**101**on the wafer. Often, the amount of mask material**206**defining the critical dimension**201**will be modified to enhance the latitude of the process steps used to fabricate wafer features having a critical dimension**101**. Other parameters, such as mask material**206**width, exposure dose, and focus, can also be adjusted singly or in combination to achieve the critical dimension**101**on the wafer. - [0009]Conventionally, enhanced processing latitude for critical dimensions
**101**are experimentally obtained by modifying process parameters. A series of test patterns is created. The test patterns are derived from the original pattern used to create structures having critical dimensions**101**, but may have mask material edge positions varying about the original pattern defining the critical dimension**101**. The test and original patterns are used to fabricate features using a matrix of processing parameters. The processing parameters may include photolithographic, resist development, and etch effect parameters. For example, the photolithographic parameters may include light exposure time and depth of focus of light. These processing parameters are known to persons skilled in the art. - [0010]Subsequently, one test pattern is chosen that demonstrates the least sensitivity to variations in process parameters. The chosen test pattern must form a feature with an accurate critical dimension
**101**with specific process parameters. This procedure is laborious and expensive because it requires fabricating and analyzing multiple patterns formed with many different process parameters. Hence, only a finite amount of test patterns can practically be fabricated with different parameters. As a result of this constraint, process latitude can be enhanced to only a coarse extent. It is therefore desirable to more accurately and inexpensively enhance the latitude of the process parameters. This latitude is sometimes known as the contrast of the process. A high contrast indicates a high tolerance to process variation. A high contrast is desirable because a relatively large change in the process will induce a relatively small change of an edge position, possibly affecting a critical dimension**101**, on a wafer. - [0011]Typically, the mask features are formed with distortion on a device or an integrated circuit as a result of nonlinear process effects. Nonlinear process effects occur during many processing steps, including exposure (step
**110**) and development (step**120**). For example, distortion may occur during exposure (step**110**) as a result of optical diffraction. Also, distortion may occur during development (step**120**) as a result of resist swelling. Nonlinear processing effects are described in*Silicon Processing for the VLSI Era*by Wolf et al., which is herein incorporated by reference. The nonlinear processing effects can be analytically described with theoretical or empirical models. These models are known by persons skilled in the art. For example, optical nonlinear effects are described in*Principles of Optics*by Born et al., which is herein incorporated by reference. Such models may be used to simulate fabrication of a device or an integrated circuit in software, such as the FAIM program by Vector Technology (Brookline, Mass.), or programs from Precim Company (Portland, Oreg.). - [0012]Models may consist of one or more kernels, typically three-dimensional functions. When a model is convolved with a pattern, the behavior of that pattern at a specific point may be predicted. If many points are taken, a three-dimensional behavior can be predicted. A model threshold is a value that, when subtracted from the value of the model, can convert the modeled behavior to a binary behavior. For example, when a threshold of 0.3 is chosen, the model is convolved with the pattern and a value of 0.35 is returned. Subtracting 0.30 from 0.35 suggests that the pattern has a positive behavior at this point. Additionally, a shifted behavior can be used by retaining the calculated differential magnitude, e.g., 0.05. This information can be interpreted in any number of ways, depending on the specific application.
- [0013]Conventionally, after process latitudes have been coarsely enhanced by experimentally choosing a test pattern and process parameters, the definition of features on the mask may be modified by proximity effect correction (PEC). Generally, PEC can be accomplished either manually using experimental data or using simulation software for feedback, or automatically with software using a rules-based method, or a model-based method. Examples of such software are Optimask from Vector Technology (Brookline, Mass.), Proteus from Precim Company (Portland, Oreg.), and OPRX from Trans Vector Technology (Camarillo, Calif.). Using a model-based method, the kernels are convolved with the original mask layout, compared to a threshold to determine the distortion, and a new mask pattern is created whose features will have diminished distortion when formed in an integrated circuit or device. The use of model-based PEC is well known to persons skilled in the art. The use of models to diminish distortions in fabricated features is further described in “Fast Sparse Aerial Image Calculation for OPC,” 15th Annual Symposium on Photomask Technology and Management, 1995, by N. Cobb et al., and “Spatial Filter Models to Describe IC Lithographic Behavior,” the Optical Microlithography SPIE 1997 Proceedings, Vol. 3051, pp. 469-478, by J. P. Stirniman et al., which are hereby incorporated by reference.
- [0014]The specific process parameters determined by experiment, described previously, can be supplied to proximity effect correction software. To reduce cost and enhance accuracy, it is desirable to automatically transfer the process parameters to the proximity effect correction software.
- [0015]The present invention is a system and method for enhancing process latitude, or tolerance, in the fabrication of devices and integrated circuits. A measuring point is selected corresponding to a feature of critical dimension. Then the pattern is convolved with the model, and its value and rate of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold having the largest rate of change, or contrast, is selected. Finally, proximity correction is performed using relevant parameters.
- [0016]The method may be implemented in a computer including a processor and a memory. A first calculating process enables the processor to calculate modeled behavior values and their rates of change over a range of corresponding values of the first process parameter. A second calculating process enables the processor to select the optimum threshold. Proximity correction is performed using the optimum threshold. Proximity correction can be performed manually using simulation software for feedback, or automatically with software. Because the method is implemented in a computer, the model parameters can be determined efficiently over finer incremental values of the first process parameter. Therefore, the parameters can be more precisely and inexpensively determined.
- [0017]In one embodiment, the first process parameter may be mask material edge position in a computer representation of a mask. In one such embodiment, for instance, the optimum threshold is provided to a proximity effect correction process in which the computer representation of the mask is modified to compensate for proximity effects. As a result, the masks can be automatically or semi-automatically sequentially optimized for process latitude and proximity effect correction with a single computer program.
- [0018]In a second embodiment, the first process parameter may be an optical parameter of a stepper, for example, numerical aperture. In this embodiment, the numerical aperture of the model is varied to determine the value that corresponds to the maximum rate of change of the modeled behavior. The maximum rate of change of the modeled behavior and its corresponding optimum threshold are provided to a proximity effect correction process in which the computer representation of the mask is modified to compensate for proximity effects.
- [0019]Further features and advantages of the present invention, as well as the structure and operation of the various embodiments of the present invention, are described in detail below with reference to the accompanying drawings.
- [0020]The present invention is described with reference to the accompanying drawings. In the drawings, like reference numbers indicate identical or functionally similar elements. Additionally, the leftmost digit(s) of a reference number identifies the drawing in which the reference number first appears.
- [0021][0021]FIG. 1(
*a*) is a cross-sectional view of prior art resist exposure; - [0022][0022]FIG. 1(
*b*) is a cross-sectional view of prior art resist development; - [0023][0023]FIG. 1(
*c*) is a cross-sectional view of prior art material removal; - [0024][0024]FIG. 1(
*d*) is a cross-sectional view of prior art conductor deposition; - [0025][0025]FIG. 2 is a cross-sectional view of a prior art photolithography system;
- [0026][0026]FIG. 3(
*a*) is an aerial view of a computer representation of a mask; - [0027][0027]FIG. 3(
*b*) is an aerial view of a computer representation of a wafer; - [0028][0028]FIG. 4(
*a*) is a flow chart of a method for modeling a semiconductor process; - [0029][0029]FIG. 4(
*b*) is a flow chart of method for determining values and rates of change of a threshold; - [0030][0030]FIG. 4(
*c*) is a flow chart of a method for modeling a photolithographic process; - [0031][0031]FIG. 5(
*a*) is an illustration of a computer representation of a mask; - [0032][0032]FIG. 5(
*b*) is a diagram relating the values and slope of threshold with mask material edge position; and - [0033][0033]FIG. 6 is a block diagram of one embodiment of a computer system.
- [0034]In the following detailed description of the preferred embodiments, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration of specific preferred embodiments in which the inventions may be practiced. These embodiments are described in sufficient detail to enable persons skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized and that logical, mechanical and electrical changes may be made without departing from the spirit and scope of the present inventions. The following detailed description is, therefore, not to be taken in a limiting sense, and the scope of the present inventions is defined only by the appended claims.
- [0035]There are a large number of combinations of modeled behavior values and mask material edge position, or other process variables, that can provide a desired wafer edge position in a certain situation. Not all of these combinations have desirable process parameters or behaviors. The present invention is a system and method of selecting the best modeled behavior value, or threshold, based upon the contrast or slope of the model behavior. Given this threshold, a proximity effect correction program will yield the previously determined mask material edge position. When a mask
**208**is created from the corrected data, and a wafer processed, the process latitude, or contrast of the evaluated point(s) should be maximized. This technique can be extended, and instead of moving the mask material edge, the modeled behavior value itself can be varied while keeping the mask material edge constant to find the best model conditions, such as stepper numerical aperture, focus, or on or off axis settings. Thus, for example, the best stepper condition and threshold can be presented to the proximity effect correction software to adjust the mask material edge everywhere on the mask**208**accordingly. In one embodiment, this last step is not necessary, as the best stepper conditions provide the desired result. - [0036]In a general sense, what is described below is a computer-implemented method for determining an optimal process parameter for the fabrication of devices and integrated circuits comprising selecting an initial position corresponding to a feature of critical dimension. Then, modeled behavior values and their rates of change are calculated over a range of corresponding values of a first process parameter. Next, an optimum threshold corresponding to the largest rate of change of the modeled behavior is selected. Finally, proximity correction is performed using the optimal threshold and, possibly, additional information. The present invention may arrive at an optimal threshold and, optionally, corresponding process parameters by simulating one or more processing steps described above. For example, the present invention may simulate only the exposure step (step
**110**). Alternatively, the present invention may simulate the exposure, development and etch steps (steps**110**,**120**,**130**). - [0037]The present invention will now be described in detail. In one embodiment, the first process parameter is the position of a mask material edge in a mask. In such an embodiment, the optimal threshold is determined as follows. First, an initial position of a mask material edge
**302**on a computer representation of a mask**304**is selected (step**410**), as illustrated in FIGS.**3**(*a*) and**4**(*a*). The initial position, in part, defines a feature of critical dimension on the wafer (e.g., the width of a line). FIG. 3(*a*) illustrates an exemplary initial position**306**on a computer representation of a mask**304**. A measuring point**308**on the computer representation of the wafer**312**is then selected and a threshold selected to create an edge**310**at that measuring point**308**, as shown in FIG. 3(*b*). The measuring point**308**on the computer representation of the wafer**312**is located on an edge**310**that defines a feature of critical dimension of a device of the wafer. - [0038]Then, the value and rate of change of a modeled behavior at the measuring point
**308**on the computer representation of a wafer**312**over a range of a first process parameters is determined by computer simulation (step**420**). Each model value is a potential threshold. In this embodiment, the modeled behavior value and its rate of change are dependent variables. The measuring point**308**and the first process parameter are independent variables. Thus, for a given measuring point**308**, the first process parameter is incremented or decremented by a desired amount over a desired range of values. The value and the rate of change of the modeled behavior are then calculated at the measuring point**308**on the computer representation of the wafer for each incremental value of the first process parameter. The incremental values of the first process parameter, and the corresponding values of the model and its rate of change may be stored in a table. - [0039]In a photolithographic process, for example, the first process parameter may be the edge position
**302**of the mask material**206**in the computer representation of the mask**208**. This example will be described below in more detail. - [0040]Next, the optimum threshold is selected (step
**430**). The optimum threshold is equal to the model value having the greatest rate of change over the evaluated range of first process parameter values. The optimum threshold is the point at which processing latitudes are optimized. Thus, both the threshold and the first process parameter can be more precisely and inexpensively determined to maximize process latitude. - [0041]Then, the optimum threshold and, optionally, the corresponding first process parameter, are provided to a proximity effect correction (PEC) process (step
**440**). The PEC process modifies the mask material edge positions**302**over the mask**208**or base layer to compensate for proximity effects (step**450**), described above. Thus, the mask or base layer can be automatically or semi-automatically sequentially optimized for process latitude and proximity effect correction with a single computer program. - [0042]The value and rate of change of the modeled behavior with respect to the measuring point
**308**on the computer representation of the wafer**312**is determined (step**420**) in a manner known to persons skilled in the art. Points on either side of measuring point**308**are selected and the rate of change of the modeled behavior across the three points is calculated. In an exemplary embodiment, the value and rate of change of the modeled behavior may be determined in the manner illustrated in FIG. 4(*b*). However, other embodiments of methods for determining the value and rate of change, different from the one described below, may also be used. First, the value of the first process parameter is decremented from an initial value by a first value (step**460**). Then, the value of the modeled behavior at the measuring point on the computer representation of the wafer**312**with respect to the first process parameter is determined or calculated (step**465**) with the models described above. Next, the value of the modeled behavior is determined on the computer representation of the wafer**312**at a location that is offset by a second value from the measuring point**308**in one direction of change of the first process parameter (step**470**). Then, the modeled behavior value is determined on the computer representation of the wafer**312**at a location that is offset by the second value from the measuring point**308**in the other direction of change of the first process parameter (step**475**). Finally, the rate of change of the modeled behavior, at the measuring point**308**and corresponding to the value of the first process parameter, is determined or calculated (step**480**). The rate of change is solved (step**480**) by first calculating the difference of the modeled behavior values ascertained in steps**470**and**475**. Then, the rate of change is determined by dividing the difference of the modeled behavior values by twice the second value. The values and rates of change of the modeled behavior and the corresponding values of the first parameter are entered into the table. - [0043]Next, it is determined whether the value and rate of change of the modeled behavior has been calculated for a first process parameter value equal to the first value (step
**485**). If these calculations have been performed, then the process is stopped (step**490**). If these calculations have not been performed, then the first process parameter value is incremented by a third value (step**487**). The third value may be chosen so that the first value can be divided by the third value without a remainder. In one such embodiment, the third value is 2^{−N }times the first value, where N is an integer greater than one. After performing step**487**, steps**465**,**470**,**475**,**480**, and**485**are repeated. - [0044]It should be noted that the change in the first process parameters does not have to be symmetric around the initial value of the first process parameter. In addition, the step by which the first process parameter is changed in determining the optimum threshold does not have to be constant.
- [0045]Operation of this exemplary embodiment of the present invention will now be described, as shown in FIG. 4(
*c*). However, other embodiments may be performed differently. First, an initial position**306**on an edge of mask material**206**of the computer representation of the mask**304**which forms a feature of critical dimension is selected (step**492**). Next, the value and rate of change of the modeled behavior are determined about a measuring point**308**on a computer representation of the wafer**312**over a range of modeled mask material edge positions (step**494**). The rate of change (step**494**) can be calculated by any standard method or can be calculated using the method (steps**470**,**475**,**480**) described above. In one embodiment of such an approach, the second value ranges between one and ten nanometers. For instance, the modeled behavior value at the measuring point and at pointsą10 nm from the measuring point may be used to calculate the rate of change in the modeled behavior value needed to place an edge**310**at the measuring point**308**. The third value may be, for example, ten nanometers. Using the iterative technique (step**420**) described above, the optimum threshold is then determined (step**496**). Subsequently, the optimum threshold is provided to the PEC process described above (step**497**). The PEC process can then correct proximity effects while maintaining maximum processing latitude. The PEC process modifies the mask material edge positions**302**to compensate for proximity effects (step**498**). Finally, the mask**208**can be fabricated, incorporating the modified modeled mask material edge positions**302**, using techniques known by persons skilled in the art (step**499**). - [0046]Modifying the mask material edge position on the mask
**208**to yield the maximum slope of the modeled behavior value at the measuring point**308**on the wafer will result in maximized process latitude. Both the modeled behavior value and the rate of change of the modeled behavior value can be determined more efficiently over finer variations of mask material with this method then by experimentation. - [0047]Exemplary results of performing the method described above will now be discussed. In this example, an optical model process is used. FIG. 5B illustrates a plot of threshold
**502**and the rate of change, or slope, of the modeled behavior value**504**with respect to change in the modeled mask material edge position**510**. The data for this plot was calculated for a measuring point**308**on a computer representation of a mask**304**, having mask material**206**defining a feature of critical dimension, and corresponds to steps**492**and**494**. In one example, the mask material**206**width**503**and length**502**may be respectively 400 nm and 3000 nm, as illustrated in FIG. 5A. The data is extracted from the previously described table. Modifying the mask material edge position of a mask**208**by the amount**510**to yield a maximum slope**508**of the threshold**502**will result in the latitude of the exposure (step**110**) being maximized. Practically, this means that the exposure (step**110**) will have enhanced contrast. Therefore, variations of photolithographic parameters affecting light intensity, such as exposure time and depth of focus, will have a diminished effect on the fabricated feature dimension of critical dimension. The optimum threshold value**506**, or modeled behavior value having the maximum slope, is then determined (step**496**). Then optimum threshold value**506**is provided to the PEC process (step**497**) to modify the mask**208**to compensate for nonlinear effects during the exposure (step**110**) that distort the features formed on the resist**102**. - [0048]The optimum threshold value
**506**can be determined for numerous measuring points**308**on the computer representation of the wafer**312**. If the optimum threshold values**506**vary at the different measuring points**308**, a statistical analysis can be performed on the optimum threshold values**506**. Various forms of statistical analysis are known to persons skilled in the art. Thus, a threshold value that is a function, such as the mean or median, of the optimum threshold values**506**can be determined and conveyed to the PEC process. - [0049]In addition, multiple models can be considered in the same way. Multiple models may include, for example, models for out-of-focus conditions, or different illumination conditions.
- [0050]The aforementioned methods may be implemented in a computer system. FIG. 6 illustrates an exemplary computer system
**605**that includes a central processing unit**610**and memory**620**. The memory**620**can be random access memory, disk storage, CD-ROM storage, or another type of memory. Within the memory**620**, the computer system**610**has access to its operating system**630**and user software**640**. To implement the method of the present invention, user software**640**can include the PROTEUS program along with user-modified scripts. Alternatively, the user software can be user-developed software, or software from another vendor. - [0051]The present invention is an apparatus and method of determining the optimum process point in device and integrated circuit fabrication. The present invention uses a computer to increase the accuracy and reduce the cost of determining the best process point. Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that any arrangement which is calculated to achieve the same purpose may be substituted for the specific embodiments shown. This patent is intended to cover any adaptations or variations of the present invention. For example, the first process parameter may represent the focus, numerical aperture, exposure time, or on or off axis settings of a stepper. Also, the present invention can be implemented with a variety of masks, including, but not limited to, attenuated phase shift masks, alternating aperture phase shift masks, and chromeless phase shift masks. Also, other lithography techniques may be used, including, but not limited to, X-ray, ion, and electron beam lithography. Therefore, it is manifestly intended that this invention be limited only by the claims and the equivalents thereof.

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Classifications

U.S. Classification | 700/97, 700/121, 257/E21.525, 716/53 |

International Classification | C09K8/80, C09K8/508, C09K8/42, H01L21/66, G03F7/20 |

Cooperative Classification | H01L22/20, C09K8/508, C09K8/80, G03F7/70558, C09K8/42 |

European Classification | G03F7/70L4B, H01L22/20, C09K8/42, C09K8/508, C09K8/80 |

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