US20040041255A1 - Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices - Google Patents
Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices Download PDFInfo
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- US20040041255A1 US20040041255A1 US10/228,906 US22890602A US2004041255A1 US 20040041255 A1 US20040041255 A1 US 20040041255A1 US 22890602 A US22890602 A US 22890602A US 2004041255 A1 US2004041255 A1 US 2004041255A1
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- heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
- H01L2924/10158—Shape being other than a cuboid at the passive surface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
Definitions
- the present invention is directed toward microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices.
- microelectronic device fabrication is to manufacture smaller and faster microelectronic devices for computers, cell phones, pagers, personal digital assistants, and many other products. All microelectronic devices generate heat, and rejection of this heat is necessary for optimum and reliable operation. As the speed and capacity of microelectronic devices has increased, the integrated circuitry of the devices has become smaller and more closely spaced, thereby generating more heat. Moreover, the cooling space within the microelectronic devices has become smaller. Accordingly, heat dissipation has become a critical design factor.
- FIGS. 1 A- 1 C schematically illustrate an existing method for dissipating heat from devices formed on a wafer 110 .
- FIG. 1A is a schematic side view of the wafer 110
- FIG. 1B is a schematic side view of the wafer 110 thinned, for example, in accordance with the procedures disclosed in U.S. Pat. No. 6,180,527, assigned to the assignee of the present invention and incorporated herein by reference.
- Thinning the wafer 110 increases the surface area per unit volume of the wafer 110 , and therefore the ability of the wafer 110 to reject heat.
- FIG. 1A is a schematic side view of the wafer 110
- FIG. 1B is a schematic side view of the wafer 110 thinned, for example, in accordance with the procedures disclosed in U.S. Pat. No. 6,180,527, assigned to the assignee of the present invention and incorporated herein by reference.
- Thinning the wafer 110 increases the surface area per unit volume of the wafer 110 , and
- FIG. 1C illustrates a microelectronic device 100 including a portion of the diced wafer 110 , such as a microelectronic die 140 , and a heat sink 130 attached to the die 140 .
- the heat sink 130 absorbs heat from the die 140 and dissipates the heat into the ambient air.
- a cooling fan can be added to force air past the heat sink 130 .
- a heat pipe typically includes a closed, evacuated vessel with a working fluid inside.
- One end of the heat pipe is positioned to absorb heat from the die 140 .
- the heat causes the fluid in the heat pipe to vaporize and create a pressure gradient in the pipe. This pressure gradient forces the vapor to flow along the heat pipe to a cooler section where it condenses, giving up its latent heat of vaporization.
- the cooler section of the heat pipe then dissipates the heat into the ambient air.
- the working fluid then returns to the end of the heat pipe proximate to the die 140 .
- attaching a heat sink, heat pipe, and/or cooling fan to the microelectronic device may substantially increase the weight and/or size of the device.
- the limited contact area between the die and the heat sink or heat pipe may limit the heat transfer between the devices.
- a microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface.
- the second surface has a plurality of heat transfer surface features.
- the second surface has a projected area and a surface area, including the heat transfer surface features, that is greater than the projected area.
- the heat transfer surface features are not configured to provide electrical communication between the microelectronic substrate and components external to the microelectronic substrate. In a further aspect of the invention, the heat transfer surface features are integrally formed in the second surface.
- the second surface of the microelectronic substrate defines at least in part a thermal conductor volume.
- the microelectronic device further includes an enclosure member sealably coupled to the microelectronic substrate, and a thermal conductor disposed within the thermal conductor volume to transfer heat from the active devices.
- the second surface has a plurality of recesses.
- the microelectronic device further includes a sealed heat transport system coupled to the second surface of the microelectronic substrate. The heat transport system has a cavity with a thermal conductor configured to transfer heat from the microelectronic substrate to a region external to the microelectronic substrate, and the thermal conductor is sealably excluded from the recesses.
- a method for making the microelectronic device includes forming active devices at least proximate to the first surface of the microelectronic substrate, and removing material from the second surface of the microelectronic substrate to form heat transfer surface features.
- the method includes forming at least one recess in the second surface of the microelectronic substrate, and disposing the thermal conductor in the at least one recess.
- the thermal conductor is not configured to provide electrical communication between the microelectronic substrate and external components.
- the method further includes sealably enclosing the at least one recess with the thermal conductor positioned to transfer heat from the active devices to a region external to the microelectronic substrate.
- a method for cooling the microelectronic device includes providing a microelectronic substrate having a first surface, a second surface with at least one recess, and a plurality of active devices at least proximate to the first surface. The method further includes vaporizing at least some of a liquid positioned in the at least one recess as the liquid absorbs heat from the microelectronic substrate, and condensing at least some of the vaporized liquid by transferring heat away from the microelectronic substrate.
- FIG. 1A is a schematic side view of a wafer in accordance with the prior art.
- FIG. 1B is a schematic side view of the wafer shown in FIG. 1A after thinning in accordance with the prior art.
- FIG. 1C is a schematic side view of a microelectronic device including a portion of the wafer and a heat sink in accordance with the prior art.
- FIG. 2A is a schematic side view of a substrate positioned for processing in accordance with an embodiment of the invention.
- FIG. 2B is a schematic side view of a microelectronic device formed from the substrate shown in FIG. 2A having heat transfer surface features in accordance with an embodiment of the invention.
- FIG. 3 is a schematic side view of a microelectronic device having heat transfer surface features in accordance with another embodiment of the invention.
- FIG. 4 is a schematic side view of a microelectronic device having heat transfer surface features in accordance with yet another embodiment of the invention.
- FIG. 5 is a schematic side view of a microelectronic device including a heat dissipation system in accordance with another embodiment of the invention.
- FIG. 6 is a schematic side view of a microelectronic device including a sealed heat transport system in accordance with another embodiment of the invention.
- microelectronic devices with increased heat dissipation methods for manufacturing microelectronic devices, and methods for cooling microelectronic devices.
- Many specific details of several embodiments of the invention are set forth in the following description and in FIGS. 2 A- 6 to provide a thorough understanding of such embodiments. Those of ordinary skill in the art, however, will understand that the invention can have additional embodiments, and that the invention may be practiced without several of the details described below.
- FIG. 2A is a schematic side view of a microelectronic substrate 240 , such as a wafer, prior to processing in accordance with an embodiment of the invention.
- the microelectronic substrate 240 can include a first surface 213 and a second surface 216 facing opposite from the first surface 213 .
- the term “microelectronic substrate” includes substrates (such as wafers and/or dies diced from wafers) upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or vias or conductive lines are or can be fabricated.
- the microelectronic substrate 240 can include active devices 220 , such as capacitors, transistors, and/or memory cells, proximate to the first surface 213 .
- active devices 220 such as capacitors, transistors, and/or memory cells, proximate to the first surface 213 .
- the active devices 220 generate heat that must be dissipated to obtain the desired operational characteristics from the devices 220 .
- FIG. 2B is a schematic side view of a microelectronic device 200 , that includes the microelectronic substrate 240 and a plurality of heat transfer surface features 250 in accordance with one embodiment of the invention.
- the microelectronic substrate 240 can be modified (for example, by thinning the microelectronic substrate 240 in accordance with procedures described in U.S. Pat. No. 6,180,527) before the formation of the heat transfer surface features 250 .
- the microelectronic substrate 240 is not thinned.
- the heat transfer surface features 250 increase the surface area of the second surface 216 of the microelectronic substrate 240 .
- the second surface 216 has a projected area PA generally parallel to the first surface 213 .
- the surface area of the second surface 216 including the heat transfer surface features 250 is greater than the projected area PA and this increased surface area can enhance the ability of the microelectronic substrate 240 to dissipate heat.
- the heat transfer surface features 250 include grooves 261 that permit a heat transfer medium, such as air, to have increased thermal contact with the microelectronic substrate 240 , thereby increasing the amount of heat transferred from the microelectronic substrate 240 .
- each heat transfer surface feature 250 includes a first heat transfer wall 252 , a second heat transfer wall 254 , and a portion of the second surface 216 .
- the first and second heat transfer walls 252 and 254 can be generally parallel, and each wall can extend from the second surface 216 to a recessed surface 256 .
- the heat transfer walls can be non-parallel.
- each heat transfer surface feature 250 has a generally similar shape and size.
- the heat transfer surface features 250 can be disposed in a portion of the microelectronic substrate 240 having a thickness T, and each surface feature 250 can have a depth D and a width W 1 , and can be spaced apart from the adjacent surface feature 250 by a distance W 2 .
- D is approximately 400 microns and T is approximately 750 microns.
- D is from about one-fifth to about three-fourths the value of T.
- D is from about one-third to about one-half the value of T.
- D, T, W 1 , and W 2 can have other values depending on the heat transfer requirements and available volume of the microelectronic substrate 240 .
- the heat transfer surface features 250 are not configured to provide electrical communication between the microelectronic substrate 240 and components external to the microelectronic substrate 240 . This function can instead be provided by electrical couplers 208 , such as solder balls, which are electrically coupled to the active devices 220 .
- the heat transfer surface features 250 can be integrally formed in the microelectronic substrate 240 .
- the heat transfer surface features 250 can be formed by removing material from the second surface 216 (such as by etching) to create the grooves 261 .
- the heat transfer surface features 250 can be formed by depositing material on the second surface 216 .
- the active devices 220 generate heat that flows through the microelectronic substrate 240 , primarily by conduction, and is transferred away from the substrate 240 by convection, conduction and/or radiation.
- a heat transfer medium such as air
- the heat transfer surface features 250 increase the rate at which heat is transferred away from the microelectronic substrate 240 by increasing the surface area of the substrate 240 .
- heat sinks can further increase the rate at which heat is transferred from the microelectronic substrate.
- FIG. 3 is a schematic side view of a microelectronic device 300 having heat transfer surface features 350 in accordance with another embodiment of the invention.
- the microelectronic device 300 includes a microelectronic substrate 340 having a first surface 313 , a second surface 316 , and a plurality of heat transfer surface features 350 formed in the second surface 316 to increase the surface area and enhance the ability of the substrate 340 to dissipate heat. Grooves 361 separate the heat transfer surface features 350 from each other.
- Each heat transfer surface feature 350 can include a first heat transfer wall 352 , a second heat transfer wall 354 , and a portion of the second surface 316 .
- first and second heat transfer walls 352 and 354 are generally parallel, and each wall 352 and 354 extends from the second surface 316 to a recessed surface 356 .
- the recessed surface 356 has an arcuate shape, curving between the first heat transfer wall 352 of one heat transfer surface feature 350 and the second heat transfer wall 354 of an adjacent heat transfer surface feature 350 .
- FIG. 4 is a schematic side view of a microelectronic device 400 having heat transfer surface features 450 in accordance with another embodiment of the invention.
- the microelectronic device 400 includes a microelectronic substrate 440 having a first surface 413 , a second surface 416 , and a plurality of heat transfer surface features 450 formed in the second surface 416 . Grooves 461 separate the heat transfer surface features 450 from each other.
- Each heat transfer surface feature 450 can include a first heat transfer wall 452 , a second heat transfer wall 454 , and a portion of the second surface 416 .
- first heat transfer wall 452 of one heat transfer surface feature 450 and the second heat transfer wall 454 of an adjacent heat transfer surface feature 450 are nonparallel to each other.
- the distance between the first heat transfer wall 452 and the second heat transfer wall 454 decreases as the walls 452 and 454 extend from the second surface 416 toward the first surface 413 .
- heat transfer surface features with other shapes and/or sizes can be used to increase the surface area of the microelectronic substrate.
- FIG. 5 is a schematic side view of a microelectronic device 500 including a microelectronic substrate 540 having active devices 220 and a heat dissipation system 502 .
- the microelectronic substrate 540 is similar to the microelectronic substrate 240 discussed above with reference to FIG. 2B.
- the microelectronic substrate 540 can include heat transfer surface features 550 , separated by grooves 561 , and having first heat transfer walls 552 , second heat transfer walls 554 , and recessed surfaces 556 recessed from a second surface 516 .
- the microelectronic substrate 540 can have other configurations, such as those discussed above with reference to FIGS. 3 and 4.
- the heat dissipation system 502 can transfer heat from the microelectronic substrate 540 to an external heat sink 589 .
- the heat dissipation system 502 of the illustrated embodiment can include a thermal conductor 572 disposed within a thermal conductor volume 570 and arranged to transfer heat to the external heat sink 589 .
- the thermal conductor volume 570 can be defined by a first side wall 580 , a second side wall 581 , an enclosure member 584 , and portions of the microelectronic substrate 540 , such as the first and second heat transfer walls 552 and 554 and the recessed surfaces 556 of the heat transfer features 550 .
- the thermal conductor 572 is positioned within the thermal conductor volume 570 to absorb heat from the microelectronic substrate 540 .
- the thermal conductor 572 has multiple phases within the thermal conductor volume 570 .
- the thermal conductor 572 can include a liquid phase portion 578 disposed primarily within the grooves 561 , and a gas phase portion 574 disposed primarily between the first side wall 580 and the second side wall 581 .
- the thermal conductor 572 can include water, ammonia, and/or alcohol.
- the thermal conductor 572 can include other substances and/or can have other single or multi-phase compositions.
- the thermal conductor 572 can include only a solid phase material, or only a gas-phase material, or a portion of the thermal conductor 572 can include a solid phase and another portion can include a liquid or a gas phase.
- the thermal conductor volume 570 can have a negative gauge pressure so that the thermal conductor 572 can more easily vaporize. In other embodiments, the thermal conductor volume 570 can have other pressures. In any of those embodiments, the thermal conductor 572 can transfer heat from the heat transfer surface features 550 to the enclosure member 584 .
- the enclosure member 584 absorbs heat from the thermal conductor 572 and transfers the heat to the external heat sink 589 .
- the enclosure member 584 is sealably coupled to the first and second side walls 580 and 581 , which are integral portions of the microelectronic substrate 540 .
- the first and second side walls 580 and 581 can be integral portions of the enclosure member 584 , or the walls 580 and 581 can initially be separate from the enclosure member 584 and the microelectronic substrate 540 .
- the external heat sink 589 can include a plurality of fins 586 to transfer heat to an external medium, such as the surrounding air.
- the external medium can move through channels 588 between the heat fins 586 .
- the heat dissipation system 502 may not include heat fins 586 .
- the active devices 220 generate heat that flows through the microelectronic substrate 540 to the heat transfer surface features 550 . Accordingly, the first and second heat transfer walls 552 and 554 , the recessed surfaces 556 , and the second surface 516 transfer heat to the thermal conductor 572 .
- the liquid phase portion 578 of the thermal conductor 572 in the grooves 561 absorbs heat from the first and second heat transfer walls 552 and 554 and the recessed surfaces 556 . As the liquid phase portion 578 absorbs heat, it vaporizes and transforms into the gas phase portion 574 .
- the gas phase portion 574 may form proximate to the recessed surface 556 because the surface 556 is close to the hot active devices 220 .
- the gas phase portion 574 rises out of the liquid phase portion 578 toward the enclosure member 584 .
- the gas phase portion 574 transfers heat to the enclosure member 584 and condenses.
- Drops of condensate 576 fall downward toward the grooves 561 and form part of the liquid phase portion 578 in the grooves 561 .
- heat is transferred from the microelectronic substrate 540 to the enclosure member 584 and from the enclosure member 584 to the environment external to the microelectronic substrate 540 .
- An advantage of this arrangement is the rate at which heat is transferred from the microelectronic substrate 540 can be increased due to the large surface area added by the heat sink 589 and the heat transfer surface features 550 .
- the heat dissipation system 502 of the illustrated embodiment can include wicks 582 to ensure that the liquid phase portion 578 of the thermal conductor 572 returns proximate to the microelectronic substrate 540 independent of the orientation of the system 502 with respect to gravitational forces, or other forces, such as centrifugal forces.
- the wicks 582 are positioned proximate to the first and second side walls 580 and 581 . If the microelectronic device 500 is oriented such that gravity does not pull the drops of condensate 576 toward the grooves 561 , the wicks 582 will return the liquid phase portion 578 to the microelectronic substrate 540 via capillary action.
- Other embodiments, such as those in which the grooves 561 are consistently oriented beneath the enclosure member 584 may not include wicks 582 .
- FIG. 6 is a schematic side view of a microelectronic device 600 in which the microelectronic substrate 540 attached to a sealed heat transport system 602 .
- the sealed heat transport system 602 transfers heat from the microelectronic substrate 540 to the external heat sink 589 .
- Suitable sealed heat transport systems 602 include Therma-Base Heat Sinks manufactured by Thermacore International, Inc. of Lancaster, Pa.
- the sealed heat transport system 602 absorbs heat from the microelectronic substrate 540 via a first thermal conductor 572 and dissipates the heat via the external heat sink 589 .
- the external heat sink 589 can include fins 586 and in other embodiments, the fins 586 are eliminated.
- the sealed heat transport system 602 can include an internal, single or multi-phase second thermal conductor 672 that transfers heat from the first thermal conductor 572 and the microelectronic substrate 540 to the external heat sink 589 .
- the second thermal conductor can include a liquid phase portion 678 , a gas phase portion 674 and a precipitate portion 676 .
- the sealed heat transport system 602 can be attached to the microelectronic substrate 540 proximate to the grooves 561 .
- the sealed heat transport system 602 is attached to the second surface 516 of the microelectronic substrate 540 with an adhesive, such as a nitride adhesive that prevents the first thermal conductor 572 from leaking out of the grooves 561 .
- the first thermal conductor 572 can include the liquid phase portion 578 and the gas phase portion 574 , as described above with reference to FIG. 5.
- the first thermal conductor 572 can have other single or multi-phase compositions, also as described above with reference to FIG. 5.
- the first thermal conductor 572 is physically isolated with a membrane from the second thermal conductor 672 , but can transfer heat to the second thermal conductor 672 .
- the active devices 220 generate heat which flows through the microelectronic substrate 540 to the heat transfer surface features 550 .
- a first surface 614 of the sealed heat transport system 602 absorbs some of the heat directly from the microelectronic substrate 540 .
- the first thermal conductor 572 in the grooves 561 also absorbs heat through the first heat transfer walls 552 , the second heat transfer walls 554 , and the recessed surfaces 556 .
- the liquid phase portion 578 absorbs heat and vaporizes, forming the gas phase portion 574 .
- the heated first thermal conductor 572 transfers the heat to the first surface 614 of the sealed heat transport system 602 .
- heat is transferred from the microelectronic substrate 540 to the sealed heat transport system 602 , and from the sealed heat transport system 602 to the external heat sink 589 .
Abstract
Description
- The present invention is directed toward microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices.
- The current trend in microelectronic device fabrication is to manufacture smaller and faster microelectronic devices for computers, cell phones, pagers, personal digital assistants, and many other products. All microelectronic devices generate heat, and rejection of this heat is necessary for optimum and reliable operation. As the speed and capacity of microelectronic devices has increased, the integrated circuitry of the devices has become smaller and more closely spaced, thereby generating more heat. Moreover, the cooling space within the microelectronic devices has become smaller. Accordingly, heat dissipation has become a critical design factor.
- FIGS.1A-1C schematically illustrate an existing method for dissipating heat from devices formed on a
wafer 110. FIG. 1A is a schematic side view of thewafer 110, and FIG. 1B is a schematic side view of thewafer 110 thinned, for example, in accordance with the procedures disclosed in U.S. Pat. No. 6,180,527, assigned to the assignee of the present invention and incorporated herein by reference. Thinning thewafer 110 increases the surface area per unit volume of thewafer 110, and therefore the ability of thewafer 110 to reject heat. FIG. 1C illustrates amicroelectronic device 100 including a portion of thediced wafer 110, such as amicroelectronic die 140, and aheat sink 130 attached to the die 140. In operation, theheat sink 130 absorbs heat from thedie 140 and dissipates the heat into the ambient air. In one embodiment, a cooling fan can be added to force air past theheat sink 130. - Another method for dissipating heat from the die140 includes attaching a heat pipe (not shown) to the surface of the die 140. A heat pipe typically includes a closed, evacuated vessel with a working fluid inside. One end of the heat pipe is positioned to absorb heat from the die 140. The heat causes the fluid in the heat pipe to vaporize and create a pressure gradient in the pipe. This pressure gradient forces the vapor to flow along the heat pipe to a cooler section where it condenses, giving up its latent heat of vaporization. The cooler section of the heat pipe then dissipates the heat into the ambient air. The working fluid then returns to the end of the heat pipe proximate to the
die 140. - The foregoing heat dissipation methods have several drawbacks. For example, attaching a heat sink, heat pipe, and/or cooling fan to the microelectronic device may substantially increase the weight and/or size of the device. Furthermore, the limited contact area between the die and the heat sink or heat pipe may limit the heat transfer between the devices.
- The present invention is directed toward microelectronic devices with improved heat dissipation, methods of making microelectronic devices, and methods of cooling microelectronic devices. In one aspect of the invention, a microelectronic device includes a microelectronic substrate having a first surface, a second surface facing opposite from the first surface, and a plurality of active devices at least proximate to the first surface. The second surface has a plurality of heat transfer surface features. In a further aspect of the invention, the second surface has a projected area and a surface area, including the heat transfer surface features, that is greater than the projected area. In yet a further aspect of the invention, the heat transfer surface features are not configured to provide electrical communication between the microelectronic substrate and components external to the microelectronic substrate. In a further aspect of the invention, the heat transfer surface features are integrally formed in the second surface.
- In another aspect of the invention, the second surface of the microelectronic substrate defines at least in part a thermal conductor volume. The microelectronic device further includes an enclosure member sealably coupled to the microelectronic substrate, and a thermal conductor disposed within the thermal conductor volume to transfer heat from the active devices. In a further aspect of the invention, the second surface has a plurality of recesses. The microelectronic device further includes a sealed heat transport system coupled to the second surface of the microelectronic substrate. The heat transport system has a cavity with a thermal conductor configured to transfer heat from the microelectronic substrate to a region external to the microelectronic substrate, and the thermal conductor is sealably excluded from the recesses.
- In another aspect of the invention, a method for making the microelectronic device includes forming active devices at least proximate to the first surface of the microelectronic substrate, and removing material from the second surface of the microelectronic substrate to form heat transfer surface features. In a further aspect of the invention, the method includes forming at least one recess in the second surface of the microelectronic substrate, and disposing the thermal conductor in the at least one recess. The thermal conductor is not configured to provide electrical communication between the microelectronic substrate and external components. The method further includes sealably enclosing the at least one recess with the thermal conductor positioned to transfer heat from the active devices to a region external to the microelectronic substrate.
- In yet another aspect of the invention, a method for cooling the microelectronic device includes providing a microelectronic substrate having a first surface, a second surface with at least one recess, and a plurality of active devices at least proximate to the first surface. The method further includes vaporizing at least some of a liquid positioned in the at least one recess as the liquid absorbs heat from the microelectronic substrate, and condensing at least some of the vaporized liquid by transferring heat away from the microelectronic substrate.
- FIG. 1A is a schematic side view of a wafer in accordance with the prior art.
- FIG. 1B is a schematic side view of the wafer shown in FIG. 1A after thinning in accordance with the prior art.
- FIG. 1C is a schematic side view of a microelectronic device including a portion of the wafer and a heat sink in accordance with the prior art.
- FIG. 2A is a schematic side view of a substrate positioned for processing in accordance with an embodiment of the invention.
- FIG. 2B is a schematic side view of a microelectronic device formed from the substrate shown in FIG. 2A having heat transfer surface features in accordance with an embodiment of the invention.
- FIG. 3 is a schematic side view of a microelectronic device having heat transfer surface features in accordance with another embodiment of the invention.
- FIG. 4 is a schematic side view of a microelectronic device having heat transfer surface features in accordance with yet another embodiment of the invention.
- FIG. 5 is a schematic side view of a microelectronic device including a heat dissipation system in accordance with another embodiment of the invention.
- FIG. 6 is a schematic side view of a microelectronic device including a sealed heat transport system in accordance with another embodiment of the invention.
- The present disclosure describes microelectronic devices with increased heat dissipation, methods for manufacturing microelectronic devices, and methods for cooling microelectronic devices. Many specific details of several embodiments of the invention are set forth in the following description and in FIGS.2A-6 to provide a thorough understanding of such embodiments. Those of ordinary skill in the art, however, will understand that the invention can have additional embodiments, and that the invention may be practiced without several of the details described below.
- FIG. 2A is a schematic side view of a
microelectronic substrate 240, such as a wafer, prior to processing in accordance with an embodiment of the invention. Themicroelectronic substrate 240 can include afirst surface 213 and asecond surface 216 facing opposite from thefirst surface 213. As used herein, the term “microelectronic substrate” includes substrates (such as wafers and/or dies diced from wafers) upon which and/or in which microelectronic circuits or components, data storage elements or layers, and/or vias or conductive lines are or can be fabricated. Themicroelectronic substrate 240 can includeactive devices 220, such as capacitors, transistors, and/or memory cells, proximate to thefirst surface 213. In operation, theactive devices 220 generate heat that must be dissipated to obtain the desired operational characteristics from thedevices 220. - FIG. 2B is a schematic side view of a
microelectronic device 200, that includes themicroelectronic substrate 240 and a plurality of heat transfer surface features 250 in accordance with one embodiment of the invention. In one aspect of this embodiment, themicroelectronic substrate 240 can be modified (for example, by thinning themicroelectronic substrate 240 in accordance with procedures described in U.S. Pat. No. 6,180,527) before the formation of the heat transfer surface features 250. In other embodiments, themicroelectronic substrate 240 is not thinned. In either embodiment, the heat transfer surface features 250 increase the surface area of thesecond surface 216 of themicroelectronic substrate 240. For example, thesecond surface 216 has a projected area PA generally parallel to thefirst surface 213. The surface area of thesecond surface 216 including the heat transfer surface features 250 is greater than the projected area PA and this increased surface area can enhance the ability of themicroelectronic substrate 240 to dissipate heat. - In one embodiment, the heat transfer surface features250 include
grooves 261 that permit a heat transfer medium, such as air, to have increased thermal contact with themicroelectronic substrate 240, thereby increasing the amount of heat transferred from themicroelectronic substrate 240. In one aspect of this embodiment, each heattransfer surface feature 250 includes a firstheat transfer wall 252, a secondheat transfer wall 254, and a portion of thesecond surface 216. In a further aspect of this embodiment, the first and secondheat transfer walls second surface 216 to a recessedsurface 256. In other embodiments, (such as an embodiment described below with reference to FIG. 4), the heat transfer walls can be non-parallel. - In a further aspect of an embodiment illustrated in FIG. 2B, each heat
transfer surface feature 250 has a generally similar shape and size. For example, the heat transfer surface features 250 can be disposed in a portion of themicroelectronic substrate 240 having a thickness T, and eachsurface feature 250 can have a depth D and a width W1, and can be spaced apart from theadjacent surface feature 250 by a distance W2. In one embodiment, D is approximately 400 microns and T is approximately 750 microns. In another embodiment, D is from about one-fifth to about three-fourths the value of T. In still a further embodiment, D is from about one-third to about one-half the value of T. In additional embodiments, D, T, W1, and W2 can have other values depending on the heat transfer requirements and available volume of themicroelectronic substrate 240. - In one embodiment, the heat transfer surface features250 are not configured to provide electrical communication between the
microelectronic substrate 240 and components external to themicroelectronic substrate 240. This function can instead be provided byelectrical couplers 208, such as solder balls, which are electrically coupled to theactive devices 220. In another embodiment, the heat transfer surface features 250 can be integrally formed in themicroelectronic substrate 240. For example, the heat transfer surface features 250 can be formed by removing material from the second surface 216 (such as by etching) to create thegrooves 261. In other embodiments, the heat transfer surface features 250 can be formed by depositing material on thesecond surface 216. - In operation, the
active devices 220 generate heat that flows through themicroelectronic substrate 240, primarily by conduction, and is transferred away from thesubstrate 240 by convection, conduction and/or radiation. For example, a heat transfer medium, such as air, can move proximate to the heat transfer surface features 250 to absorb heat from themicroelectronic substrate 240. The heat transfer surface features 250 increase the rate at which heat is transferred away from themicroelectronic substrate 240 by increasing the surface area of thesubstrate 240. One advantage of this arrangement is that themicroelectronic substrate 240 can be cooled without the addition of a heat sink. In other embodiments (such as those described below with reference to FIGS. 5 and 6), heat sinks can further increase the rate at which heat is transferred from the microelectronic substrate. - FIG. 3 is a schematic side view of a
microelectronic device 300 having heat transfer surface features 350 in accordance with another embodiment of the invention. In one aspect of this embodiment, themicroelectronic device 300 includes amicroelectronic substrate 340 having afirst surface 313, asecond surface 316, and a plurality of heat transfer surface features 350 formed in thesecond surface 316 to increase the surface area and enhance the ability of thesubstrate 340 to dissipate heat.Grooves 361 separate the heat transfer surface features 350 from each other. Each heattransfer surface feature 350 can include a firstheat transfer wall 352, a secondheat transfer wall 354, and a portion of thesecond surface 316. In the illustrated embodiment, the first and secondheat transfer walls wall second surface 316 to a recessedsurface 356. The recessedsurface 356 has an arcuate shape, curving between the firstheat transfer wall 352 of one heattransfer surface feature 350 and the secondheat transfer wall 354 of an adjacent heattransfer surface feature 350. - FIG. 4 is a schematic side view of a
microelectronic device 400 having heat transfer surface features 450 in accordance with another embodiment of the invention. In one aspect of this embodiment, themicroelectronic device 400 includes amicroelectronic substrate 440 having afirst surface 413, asecond surface 416, and a plurality of heat transfer surface features 450 formed in thesecond surface 416.Grooves 461 separate the heat transfer surface features 450 from each other. Each heattransfer surface feature 450 can include a firstheat transfer wall 452, a secondheat transfer wall 454, and a portion of thesecond surface 416. In the illustrated embodiment, the firstheat transfer wall 452 of one heattransfer surface feature 450 and the secondheat transfer wall 454 of an adjacent heattransfer surface feature 450 are nonparallel to each other. The distance between the firstheat transfer wall 452 and the secondheat transfer wall 454 decreases as thewalls second surface 416 toward thefirst surface 413. In other embodiments, heat transfer surface features with other shapes and/or sizes can be used to increase the surface area of the microelectronic substrate. - FIG. 5 is a schematic side view of a
microelectronic device 500 including amicroelectronic substrate 540 havingactive devices 220 and aheat dissipation system 502. In the illustrated embodiment, themicroelectronic substrate 540 is similar to themicroelectronic substrate 240 discussed above with reference to FIG. 2B. For example, themicroelectronic substrate 540 can include heat transfer surface features 550, separated bygrooves 561, and having firstheat transfer walls 552, secondheat transfer walls 554, and recessedsurfaces 556 recessed from asecond surface 516. In other embodiments, themicroelectronic substrate 540 can have other configurations, such as those discussed above with reference to FIGS. 3 and 4. In any of these embodiments, theheat dissipation system 502 can transfer heat from themicroelectronic substrate 540 to anexternal heat sink 589. For example, theheat dissipation system 502 of the illustrated embodiment can include athermal conductor 572 disposed within athermal conductor volume 570 and arranged to transfer heat to theexternal heat sink 589. Thethermal conductor volume 570 can be defined by afirst side wall 580, asecond side wall 581, anenclosure member 584, and portions of themicroelectronic substrate 540, such as the first and secondheat transfer walls surfaces 556 of the heat transfer features 550. - The
thermal conductor 572 is positioned within thethermal conductor volume 570 to absorb heat from themicroelectronic substrate 540. In the illustrated embodiment, thethermal conductor 572 has multiple phases within thethermal conductor volume 570. For example, thethermal conductor 572 can include aliquid phase portion 578 disposed primarily within thegrooves 561, and agas phase portion 574 disposed primarily between thefirst side wall 580 and thesecond side wall 581. In one embodiment, thethermal conductor 572 can include water, ammonia, and/or alcohol. In other embodiments, thethermal conductor 572 can include other substances and/or can have other single or multi-phase compositions. For example, thethermal conductor 572 can include only a solid phase material, or only a gas-phase material, or a portion of thethermal conductor 572 can include a solid phase and another portion can include a liquid or a gas phase. In one embodiment, thethermal conductor volume 570 can have a negative gauge pressure so that thethermal conductor 572 can more easily vaporize. In other embodiments, thethermal conductor volume 570 can have other pressures. In any of those embodiments, thethermal conductor 572 can transfer heat from the heat transfer surface features 550 to theenclosure member 584. - The
enclosure member 584 absorbs heat from thethermal conductor 572 and transfers the heat to theexternal heat sink 589. In the illustrated embodiment, theenclosure member 584 is sealably coupled to the first andsecond side walls microelectronic substrate 540. In other embodiments, the first andsecond side walls enclosure member 584, or thewalls enclosure member 584 and themicroelectronic substrate 540. In any of these embodiments, theexternal heat sink 589 can include a plurality offins 586 to transfer heat to an external medium, such as the surrounding air. In the illustrated embodiment, the external medium can move throughchannels 588 between theheat fins 586. In other embodiments, theheat dissipation system 502 may not includeheat fins 586. - In operation, the
active devices 220 generate heat that flows through themicroelectronic substrate 540 to the heat transfer surface features 550. Accordingly, the first and secondheat transfer walls surfaces 556, and thesecond surface 516 transfer heat to thethermal conductor 572. In the illustrated embodiment, theliquid phase portion 578 of thethermal conductor 572 in thegrooves 561 absorbs heat from the first and secondheat transfer walls liquid phase portion 578 absorbs heat, it vaporizes and transforms into thegas phase portion 574. Thegas phase portion 574 may form proximate to the recessedsurface 556 because thesurface 556 is close to the hotactive devices 220. After formation, thegas phase portion 574 rises out of theliquid phase portion 578 toward theenclosure member 584. As thegas phase portion 574 approaches and/or contacts theenclosure member 584, thegas phase portion 574 transfers heat to theenclosure member 584 and condenses. Drops ofcondensate 576 fall downward toward thegrooves 561 and form part of theliquid phase portion 578 in thegrooves 561. As the process repeats, heat is transferred from themicroelectronic substrate 540 to theenclosure member 584 and from theenclosure member 584 to the environment external to themicroelectronic substrate 540. An advantage of this arrangement is the rate at which heat is transferred from themicroelectronic substrate 540 can be increased due to the large surface area added by theheat sink 589 and the heat transfer surface features 550. - The
heat dissipation system 502 of the illustrated embodiment can includewicks 582 to ensure that theliquid phase portion 578 of thethermal conductor 572 returns proximate to themicroelectronic substrate 540 independent of the orientation of thesystem 502 with respect to gravitational forces, or other forces, such as centrifugal forces. In one aspect of this embodiment, thewicks 582 are positioned proximate to the first andsecond side walls microelectronic device 500 is oriented such that gravity does not pull the drops ofcondensate 576 toward thegrooves 561, thewicks 582 will return theliquid phase portion 578 to themicroelectronic substrate 540 via capillary action. Other embodiments, such as those in which thegrooves 561 are consistently oriented beneath theenclosure member 584, may not includewicks 582. - FIG. 6 is a schematic side view of a
microelectronic device 600 in which themicroelectronic substrate 540 attached to a sealedheat transport system 602. The sealedheat transport system 602 transfers heat from themicroelectronic substrate 540 to theexternal heat sink 589. Suitable sealedheat transport systems 602 include Therma-Base Heat Sinks manufactured by Thermacore International, Inc. of Lancaster, Pa. In one embodiment, the sealedheat transport system 602 absorbs heat from themicroelectronic substrate 540 via a firstthermal conductor 572 and dissipates the heat via theexternal heat sink 589. In one embodiment, theexternal heat sink 589 can includefins 586 and in other embodiments, thefins 586 are eliminated. In any of these embodiments, the sealedheat transport system 602 can include an internal, single or multi-phase secondthermal conductor 672 that transfers heat from the firstthermal conductor 572 and themicroelectronic substrate 540 to theexternal heat sink 589. For example, the second thermal conductor can include aliquid phase portion 678, agas phase portion 674 and a precipitateportion 676. - The sealed
heat transport system 602 can be attached to themicroelectronic substrate 540 proximate to thegrooves 561. In one embodiment, the sealedheat transport system 602 is attached to thesecond surface 516 of themicroelectronic substrate 540 with an adhesive, such as a nitride adhesive that prevents the firstthermal conductor 572 from leaking out of thegrooves 561. In one aspect of this embodiment, the firstthermal conductor 572 can include theliquid phase portion 578 and thegas phase portion 574, as described above with reference to FIG. 5. In other embodiments, the firstthermal conductor 572 can have other single or multi-phase compositions, also as described above with reference to FIG. 5. In any of these embodiments, the firstthermal conductor 572 is physically isolated with a membrane from the secondthermal conductor 672, but can transfer heat to the secondthermal conductor 672. - In operation, the
active devices 220 generate heat which flows through themicroelectronic substrate 540 to the heat transfer surface features 550. Afirst surface 614 of the sealedheat transport system 602 absorbs some of the heat directly from themicroelectronic substrate 540. The firstthermal conductor 572 in thegrooves 561 also absorbs heat through the firstheat transfer walls 552, the secondheat transfer walls 554, and the recessed surfaces 556. In the illustrated embodiment, theliquid phase portion 578 absorbs heat and vaporizes, forming thegas phase portion 574. The heated firstthermal conductor 572 transfers the heat to thefirst surface 614 of the sealedheat transport system 602. As the process repeats, heat is transferred from themicroelectronic substrate 540 to the sealedheat transport system 602, and from the sealedheat transport system 602 to theexternal heat sink 589. - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (74)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/228,906 US6710442B1 (en) | 2002-08-27 | 2002-08-27 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US10/767,232 US7183133B2 (en) | 2002-08-27 | 2004-01-28 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US11/608,648 US8291966B2 (en) | 2002-08-27 | 2006-12-08 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US13/612,337 US8592254B2 (en) | 2002-08-27 | 2012-09-12 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/228,906 US6710442B1 (en) | 2002-08-27 | 2002-08-27 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/767,232 Division US7183133B2 (en) | 2002-08-27 | 2004-01-28 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
Publications (2)
Publication Number | Publication Date |
---|---|
US20040041255A1 true US20040041255A1 (en) | 2004-03-04 |
US6710442B1 US6710442B1 (en) | 2004-03-23 |
Family
ID=31976134
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/228,906 Expired - Fee Related US6710442B1 (en) | 2002-08-27 | 2002-08-27 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US10/767,232 Expired - Lifetime US7183133B2 (en) | 2002-08-27 | 2004-01-28 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US11/608,648 Expired - Fee Related US8291966B2 (en) | 2002-08-27 | 2006-12-08 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US13/612,337 Expired - Lifetime US8592254B2 (en) | 2002-08-27 | 2012-09-12 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/767,232 Expired - Lifetime US7183133B2 (en) | 2002-08-27 | 2004-01-28 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US11/608,648 Expired - Fee Related US8291966B2 (en) | 2002-08-27 | 2006-12-08 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
US13/612,337 Expired - Lifetime US8592254B2 (en) | 2002-08-27 | 2012-09-12 | Microelectronic devices with improved heat dissipation and methods for cooling microelectronic devices |
Country Status (1)
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US (4) | US6710442B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
US20040195677A1 (en) | 2004-10-07 |
US6710442B1 (en) | 2004-03-23 |
US8291966B2 (en) | 2012-10-23 |
US8592254B2 (en) | 2013-11-26 |
US20130003303A1 (en) | 2013-01-03 |
US7183133B2 (en) | 2007-02-27 |
US20070075407A1 (en) | 2007-04-05 |
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