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Publication numberUS20040133758 A1
Publication typeApplication
Application numberUS 10/739,005
Publication dateJul 8, 2004
Filing dateDec 19, 2003
Priority dateJun 16, 2000
Also published asCN1172247C, CN1337718A, US6795906, US20010054135
Publication number10739005, 739005, US 2004/0133758 A1, US 2004/133758 A1, US 20040133758 A1, US 20040133758A1, US 2004133758 A1, US 2004133758A1, US-A1-20040133758, US-A1-2004133758, US2004/0133758A1, US2004/133758A1, US20040133758 A1, US20040133758A1, US2004133758 A1, US2004133758A1
InventorsYoichi Matsuda
Original AssigneeNec Corporation
Export CitationBiBTeX, EndNote, RefMan
External Links: USPTO, USPTO Assignment, Espacenet
Memory controller, interface device and method using a mode selection signal to support different types of memories
US 20040133758 A1
Abstract
A memory controller, interface (I/F) device and method for controlling data communication with a memory device are disclosed. The memory controller allows different types of memory devices to be supported. The memory controller has a first buffer for capturing data at a rising edge of a timing control signal and a second buffer for capturing data at a falling edge of the timing control signal. A mode controller controls or adjusts the timing control signal depending on which one of single data rate (SDR) synchronous dynamic random access memory (SDRAM) mode and double date rate (DDR) mode is selected in response to a mode selection or switch signal. In SDR SDRAM mode, a clock signal is supplied to only the first buffer. In DDR mode, a data strobe signal is supplied to both the first and second buffers. The memory controller may also include a level adjuster for adjusting voltage levels of signals transferred between the memory device and buffers.
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Claims(4)
1. A memory controller for controlling data communication of a plurality of memory device types, comprising:
a timing adjuster for adjusting buffer timing of data transfer between a memory device and a data bus by controlling a timing control signal,
said timing adjuster including
a mode controller for controlling the timing control signal to meet timing requirements of each of a plurality of memory device types of a different data rate type depending on a mode selection signal inputted from outside, wherein,
the mode selection signal is based on the data rate type of the memory device type connected to the memory controller.
2. The memory controller according to claim 1, further comprising:
a level adjuster for adjusting a voltage level of data to be transferred between the memory device and the data bus depending on the type of the memory device.
3. An interface device connecting a processor and a memory device, comprising:
a memory controller for controlling data communication with the memory device,
wherein the memory controller comprises
a timing adjuster for adjusting timing of data transfer between the memory device and a data bus by controlling a buffer timing control signal,
said timing adjuster including a mode controller for controlling the timing control signal to meet timing requirements of a selected one of a plurality memory device types of different data rate type, depending on a mode selection signal inputted from outside.
4. The interface device according to claim 3, wherein the interface device and the processor are formed on a single semiconductor chip as an integrated circuit.
Description
CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is a division of co-pending application Ser. No. 09/880,938, filed on Jun. 15, 2001, the entire contents of which are hereby incorporated by reference.

BACKGROUND OF THE INVENTION

[0002] 1. Field of the Invention

[0003] The present invention relates to a memory controller, and in particular to a memory control technique supporting a plurality of different specifications of random access memory (RAM).

[0004] 2. Description of the Related Art

[0005] With the increasing speed of central processing units (CPUs), the demand for high-speed dynamic RAM (DRAM) is growing and thereby various types of DRAM have been developed and put in use. A well-known type of DRAM is a synchronous DRAM (SDRAM), which transfers data synchronously with an external clock signal. In SDRAM, the data transfer timing for read and write operations is synchronized with the rising edge of the external clock signal. Current information processing systems such as personal computer (PC) systems are typically designed to use SDRAM.

[0006] As next generation DRAM, there are considered a RAMBUS® DRAM for personal computers and a double data rate (DDR) SDRAM for servers. In DDR SDRAM, the data transfer timing for read and write operations is synchronized with the rising and falling edges of the clock signal or data strobe signal. Since SDRAM employs a rising edge of the clock signal, a memory controller designed for SDRAM is not applied to DDR SDRAM. Accordingly, it is desirable to provide compatibility for both SDRAM and DDR SDRAM within the same system.

[0007] To provide such compatibility, a semiconductor memory device selectively operating in a single data rate (SDR) mode and a DDR mode has been disclosed in Japanese Patent Application Unexamined Publication Kokai No. 10-302465. More specifically, the semiconductor memory device is provided with an operation controller which selects one of the SDR mode and the DDR mode depending on an external adjustment signal. When the SDR mode is selected, pulses are generated at timing corresponding to one edge of a system clock signal. In the case of the DDR mode selected, pulses are generated at timing corresponding to both edges of the system clock signal.

[0008] However, the conventional mode selection mechanism is incorporated within the semiconductor memory device. Accordingly, memory manufacturing steps become complicated, resulting in increased cost of manufacturing. Taking into consideration progression of technical innovation in the field of memory, it is necessary to enhance general versatility and extensibility in a memory controller to handle different types of memory which may be developed in the future.

SUMMARY OF THE INVENTION

[0009] An object of the present invention is to provide a memory controller and control method having general versatility and enhanced extensibility, allowing different types of memory devices to be supported.

[0010] According to the present invention, a memory controller separate from a memory device to be controlled is provided with a function of supporting different types of memory devices.

[0011] According to an aspect of the present invention, a memory controller for controlling data communication with a memory device, includes: a timing adjuster for adjusting timing of data transfer between the memory device and a data bus depending on a timing control signal; and a mode controller for controlling the timing control signal to meet timing requirement of the memory device depending on a mode selection signal inputted from outside.

[0012] The memory controller may further include a level adjuster for adjusting a voltage level of data to be transferred between the memory device and the data bus depending on a type of the memory device.

[0013] According to an aspect of the present invention, a memory controller for controlling data communication with a memory device, includes: a timing adjuster for adjusting timing of data transfer between the memory device and a data bus depending on a timing control signal; and a mode controller for controlling the timing control signal to meet timing requirements of the memory device depending on a mode selection signal inputted from outside.

[0014] The mode controller may select one of a clock signal and a data strobe signal as the timing control signal depending on the mode selection signal. In the case where the memory device is a synchronous RAM (random access memory), the mode controller selects the clock signal to supply it as the timing control signal to the first buffer. In the case where the memory device is a double data rate (DDR) synchronous RAM, the mode controller selects the data strobe signal to supply it as the timing control signal to the first and second buffers.

[0015] The memory controller may further include a level adjuster for adjusting a voltage level of data to be transferred between the memory device and the data bus depending on a type of the memory device.

[0016] According to another aspect of the present invention, a memory controller includes: a first buffer for capturing data at a rising edge of a timing control signal; a second buffer for capturing data at a falling edge of the timing control signal; and a mode controller for controlling the timing control signal to meet timing requirements of the memory device depending on a mode selection signal inputted from outside.

[0017] According to another aspect of the present invention, a control method for controlling data communication with a memory device, includes the steps of: a) capturing data in a first buffer at a rising edge of a timing control signal; b) capturing the data in a second buffer at a falling edge of the timing control signal; and c) controlling the timing control signal to meet timing requirements of the memory device depending on a mode selection signal inputted from outside.

BRIEF DESCRIPTION OF THE DRAWINGS

[0018]FIG. 1 is a schematic diagram showing a mode selection operation according to the present invention;

[0019]FIG. 2 is a block diagram showing an example of an information processing system employing a memory controller according to an embodiment of the present invention;

[0020]FIG. 3 is a block diagram showing internal circuits of the memory controller according to the embodiment shown in FIG. 2;

[0021]FIG. 4 is a block diagram showing internal circuits of a data buffer in the memory controller of FIG. 3;

[0022] FIGS. 5A-5D are time charts showing a DDR-mode read operation in accordance with an embodiment of the invention;

[0023] FIGS. 6A-6C are time charts showing an SDR SDRAM-mode read operation in accordance with an embodiment of the invention;

[0024] FIGS. 7A-7D are time charts showing a DDR-mode write operation in accordance with an embodiment of the invention; and

[0025] FIGS. 8A-8C are time charts showing an SDR SDRAM-mode write operation in accordance with an embodiment of the invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0026] Referring to FIG. 1, a memory controller according to the present invention is designed to support a plurality of memories A, B, . . . , which have different specifications, for example, single data rate (SDR) synchronous RAM such as SDR SDRAM, double data rate RAM such as DDR SDRAM, static RAM (SRAM), DDR SRAM, and so on. The memory controller can be set to a selected one of a plurality of internal states each corresponding to the different-type memories depending on a mode selection signal received from outside. The details of the memory controller will be described hereafter, taking as an example the case where both SDR SDRAM and DDR SDRAM are supported.

[0027] System Configuration

[0028] Referring to FIG. 2, an information processing system includes an interface section 1, a CPU 2, a memory 3, and a flash memory 4. The interface section 1 is composed of a memory controller 11 according to the present invention, device interfaces (I/F) to the CPU 2, the flash RAM 4, and PCI bus, and registers for function setting, memory form factor indication and the like. The CPU 2 performs data read and write of the memory 3 and flash RAM 4 through the interface section 1. In this example, the memory 3 is one of SDR SDRAM and DDR SDRAM, which may be used as a work memory in the system. The flash RAM 4 may previously store necessary data such as programs and various control data.

[0029] The interface section 1 and the CPU 2 may be formed as an integrated circuit on a single semiconductor substrate. The interface section 1 and the CPU 2 may be formed individually as an integrated circuit. As described before, the memory controller 11 is supplied with the mode selection signal. For example, when the mode selection signal is high, the internal state of the memory controller 11 is changed to SDR SDRAM mode and, when low, it is changed to DDR mode.

[0030] Accordingly, even if the memory 3 is changed from SDR SDRAM to DDR SDRAM, the memory controller 11 allows data communication with the memory 3 without changing specifications of the CPU and DDR SDRAM.

[0031] Memory Controller

[0032] Referring to FIG. 3, a delay-locked loop circuit 12 supplies the memory controller 11 with a necessary internal clock signal. Further, a power supply circuit (not shown) supplies the memory controller 11 with a power supply voltage.

[0033] The memory controller 11 is provided with a control signal generator 31, which supplies respective control signals to address/data switch 35, address signal generator 34, and data buffer 36 in response to control data received from selector 32 and refresh circuit 33. The selector 32 determines an access mode from data and address data on an address/data bus to output access mode control data to the control signal generator 31. The refresh circuit 33 generates refresh timing control data from data and address data on the address/data bus and outputs it to the control signal generator 31.

[0034] The CPU 2 supplies data and address data to the selector 32, the refresh circuit 33 and the address/data switch 35 through the address/data bus. The address/data switch 35 divides data and address data on the address/data bus respectively to the data buffer 36 and the address signal generator 34 depending on the control signal from the control signal generator 31. The address signal generator 34 inputs the address data from the address/data switch 35 to generate an address signal based on the control signal received from the control signal generator 31. The address signal is output to the memory 3.

[0035] The data buffer 36 receives the mode switch signal from outside and further a clock signal and a data strobe signal from the control signal generator 31. The data buffer 36 has a bidirectional data port and a bidirectional data strobe port, which are connected to the memory 3 through the level adjuster 37. The data buffer 36 performs data input/output timing adjustment depending on which one of SDR SDRAM mode and DDR mode is selected, which will be described later. Therefore, the data buffer 36 may be referred to as a timing adjuster. Here, when the mode switch signal is high, the data buffer 36 is set to SDR SDRAM mode, allowing data read and write of SDR SDRAM. When the mode switch signal is low, the data buffer 36 is set to DDR mode, allowing data read and write of DDR SDRAM.

[0036] The level adjuster 37 includes two pairs of input and output amplifiers, the respective two pairs corresponding to the bidirectional data port and the bidirectional data strobe port of the data buffer 36. Each pair of the input and output amplifiers is supplied with an input/output (I/O) power supply voltage depending on which one of SDR SDRAM and DDR SDRAM is connected as the memory 3. In the case where the memory 3 is SDR SDRAM, the voltage relationship related to I/O signals is set to a level of LVTTL (Low Voltage Transistor Transistor Logic). On the other hand, in the case where the memory 3 is DDR SDRAM, the voltage relationship related to I/O signals is set to a level of SSTL-2 (Series Stub Termination Logic-2). Such a level interface circuit supporting both LVTTL and SSTL has been disclosed in Japanese Patent Application Unexamined Publication Kokai No. 11-88146.

[0037] In SDR SDRAM-mode write operation, the data is output from the address/data switch 35 to the data buffer 36, in which the output timing of the data is adjusted so as to meet the SDR SDRAM-mode requirement. The voltage level of data outputted from the data buffer 36 is adjusted to the LVTTL level by the level adjuster 37 and then the data is written onto the memory 3 (here, SDR SDRAM).

[0038] In DDR-mode write operation, the data is output from the address/data switch 35 to the data buffer 36, in which the output timing of the data is adjusted so as to meet the DDR-mode requirement. The voltage level of the data and data strobe outputted from the data buffer 36 is adjusted to the SSTL-2 level by the level adjuster 37. Thereafter, the data and the data strobe signals are output to the memory 3 (here, DDR SDRAM). In this manner, the data is written into the memory 3.

[0039] In SDRS DRAM-mode read operation, data read out from the memory 3 (here, SDR SDRAM) is adjusted in voltage to a CPU-side voltage level at the level adjuster 37 and then is adjusted in timing at the data buffer 36. The timing-adjusted data is output from the data buffer 36 to the CPU 2 through the address/data switch 35 and the address/data bus.

[0040] Data Buffer

[0041] Referring to FIG. 4, the data buffer 36 includes a mode controller 41, a rising-edge buffer 42, and a falling-edge buffer 43. The mode controller 41 inputs the clock signal and data strobe signal from the control signal generator 31 and further inputs the mode switch signal from outside.

[0042] When the mode switch signal is high, that is, in SDRS DRAM mode, the mode controller 41 supplies the clock signal to only the rising-edge buffer 42. Accordingly, data received from the CPU 2 is captured and stored in the rising-edge buffer 42 at the rising edge of the clock signal, allowing transfer timing of the data to be adjusted so as to meet the SDR SDRAM requirement.

[0043] When the mode switch signal is low, that is, in DDR mode, the mode controller 41 supplies an input data strobe signal to both the rising-edge buffer 42 and the falling-edge buffer 43 and further outputs it as an output data strobe to the memory 3 through the level adjuster 37. Accordingly, data received from the CPU 2 is captured and stored in the rising-edge buffer 42 at the rising edge of the data strobe signal and is captured and stored in the falling-edge buffer 43 at the falling edge of the data strobe signal, allowing transfer timing of the data to be adjusted so as to meet the DDR SDRAM requirement.

[0044] The mode switch operation as described above may be implemented by a mode switch program running on a program-controlled processor.

OPERATION

[0045] Hereafter, read and write operations and mode switch operation will be described with reference to FIGS. 5-8, taking as an example the case where CAS (column address strobe) latency CL is 2 and burst length BL is 4. The CAS latency CL is defined as the number of clocks needed until data is issued at a point of time when a read command has issued. The burst length BL is defined as the number of consecutive data.

[0046] DDR-Mode Read Operation

[0047] Referring to FIGS. 5A-5D, when a read (R) command is issued at clock timing to, a data strobe signal from the DDR memory 3 goes low during an initial or “preamble” portion of time at clock timing t2, which is two clocks after the read command is issued, because of CL=2. After a lapse of one clock, the data strobe signal goes high for clock timing t3. At the rising edge of the data strobe signal, first data D0 from the DDR memory 3 is captured and stored in the rising-edge buffer 42 of the data buffer 36. Subsequently, when the data strobe signal goes low between t3 and t4, second data D1 from the DDR memory 3 is captured and stored in the falling-edge buffer 43 of the data buffer 36.

[0048] Similarly, at the next rising edge of the data strobe signal for clock timing t4, third data D2 from the DDR memory 3 is captured and stored in the rising-edge buffer 42 of the data buffer 36. Subsequently, at the next falling edge of the data strobe signal between t4 and t5, fourth data D3 from the DDR memory 3 is captured and stored in the falling-edge buffer 43 of the data buffer 36.

[0049] SDR SDRAM-Mode Read Operation

[0050] Referring to FIGS. 6A-6C, in SDR SDRAM mode, the data strobe signal is not used. Only a rising edge of the clock signal is used to read data from the SDRAM memory 3. Accordingly, the falling-edge buffer 43 is not used in the SDR SDRAM mode.

[0051] More specifically, when a read (R) command is issued at clock timing t0, first data D0 is output from the DDR memory 3 at clock timing t2, which is two clocks after the read command is issued, because of CL=2. The first data D0 is captured and stored in the rising-edge buffer 42 at clock timing t3. Similarly, second data D1 is captured and stored in the rising-edge buffer 42 at clock timing t4, and subsequently third data D2 and fourth data D3 are captured and stored in the rising-edge buffer 42 at clock timing t5 and t6, respectively.

[0052] SDR SDRAM-Mode Write Operation

[0053] Referring to FIGS. 7A-7D, when a write (W) command is issued at clock timing to, an input data strobe signal goes low during an initial or “preamble” portion of time at clock timing t1. After a lapse of one clock, the data strobe signal goes high synchronously with clock timing t2 and first data D0 is output from the rising-edge buffer 42 of the data buffer 36 to the DDR memory 3. Subsequently, when the data strobe signal goes low between t2 and t3, second data D1 is output from the falling-edge buffer 43 of the data buffer 36 to the DDR memory 3. In this manner, a predetermined number of data D0-D3 (here, BL=4) are written into the DDR memory 3 while synchronizing the data strobe signal with the clock signal.

[0054] SDRAM-Mode Write Operation

[0055] Referring to FIGS. 8A-8C, in SDRS DRAM mode, the data strobe signal is not used. Accordingly, when a write (W) command is issued at clock timing t0, first data D0 is output from the rising-edge buffer 42 of the data buffer 36 to the DDR memory 3. Similarly, second to fourth data D1-D3 are sequentially written into the DDR memory 3 synchronously with clock timing t1 to t3 of the clock signal.

[0056] As described above, in SDR SDRAM mode, no data strobe signal is used and therefore the mode controller 41 does not supply the data strobe signal to the rising-edge and falling edge buffers 42 and 43. Accordingly, there is no need of masking control of the data strobe signal.

[0057] In the above embodiment, the case of DRAM was described. However, the present invention can be also applied to the case of SRAM because DDR-SRAM is available. Further, the present invention can be also applied to the case of three or more types of memories.

Referenced by
Citing PatentFiling datePublication dateApplicantTitle
US7516293 *Sep 8, 2006Apr 7, 2009International Business Machines CorporationIncreased performance using mixed memory types
US7953950Nov 7, 2006May 31, 2011Kabushiki Kaisha ToshibaStorage device including flash memory and capable of predicting storage device performance
US8327104 *Nov 13, 2007Dec 4, 2012Google Inc.Adjusting the timing of signals associated with a memory system
US8539140Apr 28, 2011Sep 17, 2013Kabushiki Kaisha ToshibaStorage device including flash memory and capable of predicting storage device performance based on performance parameters
CN101140793BSep 7, 2007Jun 23, 2010国际商业机器公司Computing system, memory unit and method for providing memory to computing basic facility
EP1769331A1 *Jul 8, 2005Apr 4, 2007Kabushiki Kaisha ToshibaStorage device and host apparatus
Classifications
U.S. Classification711/167, 711/105, 711/170
International ClassificationG06F12/00, G11C11/407, G11C11/401, G06F13/16
Cooperative ClassificationG06F13/1694
European ClassificationG06F13/16D9