US20040259010A1 - Solid-state imaging device - Google Patents
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- US20040259010A1 US20040259010A1 US10/838,626 US83862604A US2004259010A1 US 20040259010 A1 US20040259010 A1 US 20040259010A1 US 83862604 A US83862604 A US 83862604A US 2004259010 A1 US2004259010 A1 US 2004259010A1
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- 238000003384 imaging method Methods 0.000 title claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 238000006243 chemical reaction Methods 0.000 claims description 34
- 239000003990 capacitor Substances 0.000 claims description 5
- 238000003475 lamination Methods 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 222
- 238000009792 diffusion process Methods 0.000 description 7
- 238000002834 transmittance Methods 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 230000031700 light absorption Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14645—Colour imagers
- H01L27/14647—Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
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- A—HUMAN NECESSITIES
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- A63H—TOYS, e.g. TOPS, DOLLS, HOOPS OR BUILDING BLOCKS
- A63H33/00—Other toys
- A63H33/04—Building blocks, strips, or similar building parts
- A63H33/10—Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements
- A63H33/108—Building blocks, strips, or similar building parts to be assembled by means of additional non-adhesive elements with holes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
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Abstract
Description
- 1. Field of the Invention
- The present invention relates to single-plate color CCD and CMOS solid-state imaging devices and, more specifically, to a solid-state imaging device of a photoconductive-layer-stacked type, including a stack of photoconductive layers serving as an optical-electrical conversion section on a substrate.
- 2. Description of the Related Art
- In a single-plate color solid-state imaging device of a general type, color filters such as R (Red), G (Green), and B (Blue) are assigned to a pixel formed with a light receiving section. With the solid-state imaging device structured as such, the pixels each assigned with various color filters are put in groups to derive a color signal. This results in limited improvement of the spatial resolution. For betterment, recently proposed is a solid-state imaging device including a stack of photoconductive layers (optical-electrical conversion layers) serving as an optical-electrical conversion section with a one-to-one relationship between layers and colors. With such a solid-state imaging device, a color signal can be derived without grouping pixels but with a single pixel.
- In the solid-state imaging device of such a photoconductive-layer-stacked type wherein the photoconductive layer to be the optical-electrical conversion section is formed on the substrate, FIG. 1 shows the structure of a light receiving section. Referring to FIG. 1, the light-receiving section is located on a
semiconductor substrate 101, and structured byphotoconductive layers 103R for red, 103G for green, and 103B for blue. On thesephotoconductive layers transparent electrode 105 is each provided. To be more specific, thephotoconductive layer 103B is located at the top with a thickness enough to absorb light Hb in a wavelength region specifically for blue. Thephotoconductive layer 103G is located at the middle with a thickness enough to absorb light Hg in a wavelength region specifically for green. Located at the bottom is thephotoconductive layer 103R with a thickness enough to absorb light Hr in a wavelength region specifically for red. - Through voltage application to the
semiconductor substrate 101, and thetransparent electrode layers 105 placed above and below of thesephotoconductive layers photoconductive layers - [Non-Patent Document 1]
- Dietmar Knipp, et al. “Stacked Amorphous Silicon Color Sensor”, IEEE TRANSACTION ON ELECTRON DEVICES, VOL. 49, NO. 1, JANUARY 2002, P. 170 to 176.
- The issue here is that, in the above solid-state imaging device of a photoconductive-layer-stacked type, it is difficult for the photoconductive layers to completely absorb the light in the respective wavelength regions. As a result, as shown in FIG. 1, if the
photoconductive layer 103B at the top fails to completely absorb the light Hb in the blue wavelength region, the remaining light leaks into thephotoconductive layers photoconductive layer 103G in the middle fails to completely absorb the light Hg in the green wavelength region, light leakage into the lowerphotoconductive layer 103R cannot be completely prevented. Such light leakage resultantly reduces both the color resolution and any target signal strength, i.e., sensitivity, in the wavelength regions of thephotoconductive layers - Therefore, an object of the present invention is to provide a single-plate color solid-state imaging device of a photoconductive-layer-stacked type achieving the higher color resolution and the better sensitivity.
- In order to achieve the above object, the present invention is directed to a solid-state imaging device in which a substrate corresponding to a pixel is carrying thereon a light receiving section that is a stack of multilayer films, each including a photoconductive layer and a transparent electrode layer thereon. In the imaging device, the transparent electrode layers placed between the photoconductive layers are sandwiching a translucent reflective layer with which light in a predetermined wavelength region is reflected but light of a wavelength longer than that is passed through.
- Further, the present invention is also directed to a solid-state imaging device including: a first optical-electrical conversion layer; a second optical-electrical conversion layer formed above the first optical-electrical conversion layer; and a third optical-electrical conversion layer formed above the second optical-electrical conversion layer. In the imaging device, a first translucent layer is formed between the first optical-electrical conversion layer and the second optical-electrical conversion layer, and a second translucent layer is formed between the second optical-electrical conversion layer and the third optical-electrical conversion layer.
- FIG. 1 is a cross-sectional view of a light receiving section in a conventional single-plate color solid-state imaging device of a photoconductive-layer-stacked type;
- FIG. 2 is a diagram showing the structure of a solid-state imaging device of an embodiment;
- FIGS. 3A to3C are all a graph showing the light transmission properties of a translucent reflective layer and a light absorbing layer; and
- FIGS. 4A and 4B are both a graph of the wavelength-photocurrent relationship showing the spectral properties of the solid-state imaging device.
- Description of the Preferred Embodiment
- In the below, a solid-state imaging device of an embodiment of the present invention is described in detail by referring to the accompanying drawings.
- FIG. 2 is a diagram showing the main structure of an exemplary solid-state imaging device having applied with the present invention. In the drawing, the solid-state imaging device includes a substrate1 exemplarily made of single-crystal silicon, and on the surface thereof, a plurality of pixels are arranged in matrix (in the drawing, only one pixel is shown). On each of the pixels, a light receiving section 3 is provided.
- The light receiving section3 includes a
photoconductive layer 5 r for red, aphotoconductive layer 5 g for green, and aphotoconductive layer 5 b for blue, those of which are stacked in this order on the substrate 1. Atransparent electrode layer 7 is provided above and below of each of thesephotoconductive layers photoconductive layer 5 r is sandwiched between thetransparent electrode layers 7, and so are thephotoconductive layers transparent electrode layer 7 above thephotoconductive layer 5 r and thetransparent electrode layer 7 below thephotoconductive layer 5 g are sandwiching a translucentreflective layer 9 g for reflecting light in any specific wavelength region. For the same purpose, a translucentreflective layer 9 b is sandwiched between thetransparent electrode layer 7 above thephotoconductive layer 5 g and thetransparent electrode layer 7 below thephotoconductive layer 5 b. As such, the structure is a two-layer structure in which theelectrode layers 7 placed between thephotoconductive layers reflective layers transparent electrode layer 7 at the bottom (i.e., lowermost transparent electrode layer), alight absorbing layer 11 is placed. - Described in detail next are the respective layers structuring the above light receiving section3.
- Although not shown, the
photoconductive layers photoconductive layers - As to light H entering from the
transparent electrode layer 7 at the top, thephotoconductive layer 5 b placed therebelow has a thickness tb of absorbing light Hb in a wavelength region for blue and the light Hb of a wavelength shorter than that, but passing though light of a wavelength region longer than the blue wavelength region. As to the light H reaching thephotoconductive layer 5 g in the middle from thetransparent electrode layer 7 at the top, thephotoconductive layer 5 g has a thickness tg of absorbing light Hg in a wavelength region for green, but passing though light of a wavelength region longer than the green wavelength region. Further, thephotoconductive layer 5 r at the bottom has a thickness tr of absorbing light reaching from thetransparent electrode layer 7 at the top, i.e., light Hr in a wavelength region for red that is a longer wavelength region than the green wavelength region. - Herein, such layer thicknesses tb, tg, and tr all denote an optical film thickness showing a change depending on the material of the corresponding
photoconductive layers - The
transparent electrode layers 7 sandwiching thesephotoconductive layers - The translucent
reflective layer 9 g sandwiched between thetransparent electrode layer 7 above thephotoconductive layer 5 r and thetransparent electrode layer 7 below thephotoconductive layer 5 g, and the translucentreflective layer 9 b sandwiched between thetransparent electrode layer 7 above thephotoconductive layer 5 g and thetransparent electrode layer 7 below thephotoconductive layer 5 b are exemplified by a so-called Dichroic mirror or Dichroic filter with properties of translucency and half-reflection. Specifically, the translucentreflective layers reflective layers - Specifically, the upper translucent
reflective layer 9 b reflects, out of the light H entering thephotoconductive layer 5 b from thetransparent electrode layer 7 at the top, only the light Hb in the blue wavelength region that is supposed to be absorbed by thephotoconductive layer 5 b therebelow, and passes through the light H in a longer wavelength region. That is, as shown in FIG. 3A, the translucentreflective layer 9 b has a lower transmittance T(%) for the light Hb in the blue wavelength region (about 490 nm to 550 nm), and through reflection of the light Hb in the wavelength region, has a higher transmittance T(%) for the light of a wavelength region longer than that. - The lower translucent
reflective layer 9 g reflects, out of the light H reaching thephotoconductive layer 5 g from thetransparent electrode layer 7 at the top, only the light Hg in the green wavelength region that is supposed to be absorbed by thephotoconductive layer 5 g thereabove, and passes through the remaining light. That is, as shown in FIG. 3B, the translucentreflective layer 9 g has a lower transmittance T (%) for the light Hg in the green wavelength region (about 490 nm to 580 nm), and through reflection of the light Hg in the wavelength region, has a higher transmittance T(%) for light of any other wavelength regions. - The
light absorbing layer 11 locating directly above the substrate 1, i.e., at the bottom of the light receiving section 3, is made of a material capable of absorbing the light entered from thetransparent electrode layer 7 at the top. Herein, the light Hr reaching thelight absorbing layer 11 is the one having passed through thephotoconductive layers photoconductive layer 5 b, and the light Hg in the green wavelength region is absorbed by thephotoconductive layer 5 g. Accordingly, thelight absorbing layer 11 may serve well as long as absorbing the light Hr in the red wavelength region that is supposed to be absorbed by thephotoconductive layer 5 r. Thus, as shown in FIG. 3C, thelight absorbing layer 11 may be a translucent reflective layer with a lower transmittance T(%) for the red light Hr in a longer wavelength region (about 600 nm or more), and through reflection of the light Hr of this wavelength region, has a higher transmittance T(%) for light of a wavelength region shorter than that. - As shown in FIG. 2, to the light receiving section3 structured as such,
capacitors 13 respectively corresponding to thephotoconductive layers capacitor 13 is an N+ diffusion layer 15 patterned on the surface of a p-well diffusion layer 14 formed on the surface side of the substrate 1. To each of such N+ diffusion layers 15, connected is anextraction electrode 17 pulled out from one of the two translucent electrode layers 7 (the lowertransparent electrode layer 7 in the drawing) sandwiching thephotoconductive layers - The remaining translucent electrode layers7 (the upper
translucent electrode layer 7 in the drawing) not connected to theextraction electrodes 17 are connected to a shared power supply Vp. With such a structure, photocurrent flowing between thetranslucent electrode layers 7 sandwiching thephotoconductive layers capacitor 13 for storage. - On the surface of the substrate1, between the N+ diffusion layer 15 and the surface of the substrate 1, placed is another diffusion layer serving as an electric charge transfer region (not shown) with an interval d serving as a channel region. The upper part of the channel region of the substrate 1 is provided with a reading
gate 19 correspondingly to the respective N+ diffusion layers 15. Above the electric charge transfer region, atransfer electrode 21 is placed so that a solid-state imaging device is structured. Herein, thetransfer electrode 21 is connected to thereading gate 19 via an insulation layer that is not shown. The resulting solid-state imaging device is a single-plate color CCD solid-state imaging device of a photoconductive-layer-stacked type. - With such a solid-state imaging device, when the light H enters from the uppermost
transparent electrode layer 7 to the light receiving section 3 derived by stacking thephotoconductive layers 5 r. 5 g, and 5 b, light absorption is observed through thephotoconductive layers photoconductive layer 5 b has the thickness tb of absorbing the light Hb in the blue wavelength region. Thus, out of the light H entered from thetransparent electrode layer 7 at the top, the light Hb in the blue wavelength region is absorbed by thephotoconductive layer 5 b at the top. What is more, thanks to the translucentreflective layer 9 b provided beneath thephotoconductive layer 5 b for reflecting only the light Hb in the blue wavelength region; the light Hb not completely absorbed by thephotoconductive layer 5 b is reflected by the translucentreflective layer 9 b, and then enters again into thephotoconductive layer 5 b for absorption thereby. - Compared with the case where no such translucent
reflective layer 9 b is provided, thephotoconductive layer 5 b shows the better absorption efficiency for the light Hb in the blue wavelength region. Moreover, even if not completely absorbed by thephotoconductive layer 5 b, the remaining light Hb in the blue wavelength region does not leak into thephotoconductive layers - The
photoconductive layer 5 g located below thephotoconductive layer 5 b receives only the light except for the light Hb in the blue wavelength region. Thisphotoconductive layer 5 g has the thickness tg of absorbing the light Hg in the green wavelength region. Thus, out of the light H entering thereinto, the light Hg in the green wavelength region is absorbed by thephotoconductive layer 5 g. What is more, thanks to the translucentreflective layer 9 g provided beneath thephotoconductive layer 5 g for reflecting only the light Hg in the green wavelength region, even if not completely absorbed by thephotoconductive layer 5 g, the remaining light Hg in the green wavelength region is reflected by the translucentreflective layer 9 g, and then enters again into thephotoconductive layer 5 g for absorption thereby. - Compared with the case where no such translucent
reflective layer 9 g is provided, thephotoconductive layer 5 g shows the better absorption efficiency for the light Hg in the green wavelength region. Moreover, even if not completely absorbed by thephotoconductive layer 5 g, the remaining light Hg in the green wavelength region does not leak into thephotoconductive layer 5 r located therebelow. Accordingly, the light Hg in the green wavelength region can be separated by color, with reliability, from the light including no light Hb in the blue wavelength region. - With such a structure, the lowermost
photoconductive layer 5 r receives only the light not including the lights Hb and Hg in the blue and green wavelength regions as a reliable result of color separation, i.e., the light Hr in the red wavelength region and the light in a longer wavelength region. The lowermostphotoconductive layer 5 r has the thickness of absorbing the light Hr in the red wavelength region, and thelight absorbing layer 11 is provided therebelow for absorbing the light Hr in the red wavelength region. Accordingly, even if not completely absorbed by thephotoconductive layer 5 g, the light Hr in the red wavelength region does not leak into the upperphotoconductive layers - As such, compared with the case where no such
light absorbing layer 11 is provided, the light Hr in the red wavelength region after color separation is successfully prevented from leaking again into the upperphotoconductive layers - Thanks to such successful prevention of light leakage among the
photoconductive layers - On the other hand, in the conventional solid-state imaging device with the light receiving section of FIG. 1 not including the translucent
reflective layers layer 11, the light in the wavelength region that is supposed to be absorbed by the upper photoconductive layer leaks into the lower photoconductive layer. As a result, as in FIG. 4B of the graph showing the spectral properties, the photocurrents extracted from the photoconductive layers (blue, green, and red) all show a gentle slope to reach their wavelength peaks. This is the reason why the color separation properties have been poor in the photoconductive layers. - Further, with the solid-state imaging device of the present embodiment, as described in the foregoing, any light reflected by the translucent
reflective layers photoconductive layers reflective layer 9 g nor 9 b, the sensitivity can be favorably improved. With the better sensitivity as such, even if thephotoconductive layers - Still further, with such a structure that the
photoconductive layers photoconductive layers capacitor 13 at the same time. - In the below, described now is how to achieve the better color separation properties and sensitivity in the solid-state imaging device of FIG. 2 using a simple model.
- Assuming here is that the
photoconductive layers photoconductive layers transparent electrode layers 7 are approximated that no light absorption nor reflection is observed. The strength of the light H entered the light receiving section 3 is presumed as to be Io. With such assumptions, the generation rate of electric charge e of the light H at the position with a distance (depth) x from the surface of the light receiving section 3 is expressed as follows: - g(X)=Ioλ/hc×α×exp (−αx) (where h denotes the Planck's constant, and c denotes the speed of light).
- In the conventional structure, the current J flowing through the blue
photoconductive layer 5 b located away from the surface (distance 0) by tb is expressed as follows: - J1=−q·INT[g(X)]=−qIoλ/hc·(1−exp(−αx)) (1).
- Herein, INT denotes an integral of an interval from 0 to tb.
- In the structure of the present invention, on the other hand, the current J is so approximated that the translucent
reflective layer 9 b placed between the blue and greenphotoconductive layers - As the photocurrent J1ref as a result of reflection of the light Hb in the blue wavelength region by the translucent
reflective layer 9 b, added is the photocurrent of J1ref=kb·J1·exp(−αtb) . . . (3) Note here that, in consideration of (2), K is Kb=1 (λ<λbg), and Kb=0 (λ>λbg) That is, compared with the conventional structure, through the expression of (3), the larger amount of photocurrent can be derived through absorption in the blue wavelength region. - Such an amount of component does not contribute (mix) to optical-electrical conversion in the lower
green photoconductive layer 5 g, leading to the better color resolution. That is, with the conventional structure, the optical-electrical conversion in thegreen photoconductive layer 5 g being a middle layer may result in leakage of the light Hb in the blue wavelength region from the upperphotoconductive layer 5 b. With the structure of the present invention, on the other hand, the light Hb in the blue wavelength region is favorably cut by the translucentreflective layer 9 b. - Similarly to the above, thanks to the reflection components of the light Hg in the green wavelength region in the lower translucent
reflective layer 9 g of thephotoconductive layer 5 g for green, with the structure of the present invention, the sensitivity can be favorably expected similarly to the above. As such, the blue light Hb and the green light Hg will be the reflection components, and these lights Hb and Hg do not mix into thephotoconductive layer 5 r at the bottom. As such, in thephotoconductive layer 5 r, the light Hr in the red wavelength region is mainly used for optical-electrical conversion. - Note that, in the above embodiment, the
light absorbing layer 11 is provided below thephotoconductive layer 5 r for red. When the light Hr in the red wavelength region is relatively weak, as an alternative to thelight absorbing layer 11, a reflection layer may be provided for reflecting the light Hr in the red wavelength region. If this is the case, the more light Hr in the red wavelength region can be subjected to optical-electrical conversion by thephotoconductive layer 5 r, increasing the strength of the light in the red wavelength region. In this case, also by thephotoconductive layer 5 r located at the bottom, the light reflected by the reflection layer provided therebelow can contribute to the optical-electrical conversion. Accordingly, compared with the conventional structure of FIG. 1, even if thephotoconductive layer 5 r is reduced in thickness, the sensitivity properties can be easily derived, leading to the expectation of the thinner light receiving section. - Further, the
photoconductive layer 5 r for red is not necessarily provided with either thelight absorbing layer 11 or the reflection layer. If leakage of the light Hr in the red wavelength region to the upper layer causes no harm, there is no need to include such a layer. If this is the case, no translucentreflective layer 7 is provided below thephotoconductive layer 5 r for red, and a diffusion layer formed on the substrate 1 may be used as an electrode for the lower layer. - In the above embodiment, described is the case of applying the present invention to the CCD solid-state imaging device. This is surely not restrictive, and the solid-state imaging device of the present invention is applicable to a solid-state imaging device of a MOS type (CMOS sensor). If this is the case, as alternatives to the
transfer electrode 21 and the charge transfer region therebelow of FIG. 2, wiring connected to thereading gate 19 and a driving circuit may be provided on the surface 1 and the surface layer thereof. - As described in the foregoing, according to the solid-state imaging device of the present invention, in a single-plate color solid-state imaging device of a photoconductive-layer-stacked type, a transparent electrode layer between photoconductive layers is provided with a translucent reflective layer for reflecting any light in a predetermined wavelength region so that any light of a longer wavelength is passed through. As a result, the translucent reflective layer is used to reflect only light in any specific wavelength region out of the light not absorbed by the upper photoconductive layer, and then have the light absorbed again by the upper photoconductive layer. In such a structure, the light in the specific wavelength region is prevented from leaking into the lower photoconductive layer, thereby improving the color resolution and the color productivity. What is more, in the upper photoconductive layer, the reflected light is contributed to optical-electrical conversion so as to improve the quantum efficiency, resultantly improving the sensitivity.
Claims (8)
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JP2003127673A JP4075678B2 (en) | 2003-05-06 | 2003-05-06 | Solid-state image sensor |
JP2003-127673 | 2003-05-06 |
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US20070125934A1 (en) * | 2005-12-01 | 2007-06-07 | Matthews James A | Pixel having photoconductive layers |
WO2008073639A2 (en) * | 2006-11-07 | 2008-06-19 | Cdm Optics, Inc. | Increased sensitivity of light detector using a resonant structure and associated methods |
US20090103165A1 (en) * | 2007-10-19 | 2009-04-23 | Qualcomm Mems Technologies, Inc. | Display with Integrated Photovoltaics |
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KR102338334B1 (en) | 2014-07-17 | 2021-12-09 | 삼성전자주식회사 | Organic photoelectronic device and image sensor and electronic device |
KR20160066657A (en) * | 2014-12-02 | 2016-06-13 | 삼성디스플레이 주식회사 | Organic light emitting transistor and display apparatus having the same |
KR102294724B1 (en) | 2014-12-02 | 2021-08-31 | 삼성디스플레이 주식회사 | Organic light emitting transistor and display apparatus having the same |
US11515350B2 (en) * | 2019-05-30 | 2022-11-29 | Korea Advanced Institute Of Science And Technology | Multicolor photodetector and method for fabricating the same by integrating with readout circuit |
Also Published As
Publication number | Publication date |
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KR101116448B1 (en) | 2012-03-07 |
JP4075678B2 (en) | 2008-04-16 |
KR20040095182A (en) | 2004-11-12 |
CN1551365A (en) | 2004-12-01 |
CN100367507C (en) | 2008-02-06 |
JP2004335626A (en) | 2004-11-25 |
US7932574B2 (en) | 2011-04-26 |
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