US20050035465A1 - Semiconductor device and method of manufacturing the same, circuit board and electronic instrument - Google Patents
Semiconductor device and method of manufacturing the same, circuit board and electronic instrument Download PDFInfo
- Publication number
- US20050035465A1 US20050035465A1 US10/953,518 US95351804A US2005035465A1 US 20050035465 A1 US20050035465 A1 US 20050035465A1 US 95351804 A US95351804 A US 95351804A US 2005035465 A1 US2005035465 A1 US 2005035465A1
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- semiconductor chip
- semiconductor device
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- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
Definitions
- the resin may be an anisotropic conductive film.
- FIG. 1 (A) through FIG. 2 are views illustrating the semiconductor device of this embodiment and a method of manufacturing it.
- FIG. 1 (A) is a view illustrating a method of manufacturing the semiconductor device of this embodiment
- FIG. 1 (B) is a view showing the semiconductor device manufactured according to the method.
- FIG. 2 is a plan view of the semiconductor device of FIG. 1 (B).
- the semiconductor device of this embodiment includes a semiconductor chip 10 , a substrate 20 , and a resin. The structure of the semiconductor device of this embodiment is described below.
- the anisotropic conductive material 30 is placed to form a space that opens into the through-hole 24 .
- the anisotropic conductive material 30 is disposed to cover the periphery of the region in which the semiconductor chip 10 is mounted, thereby forming a frame structure wherein the outer periphery is nearly analogous to the periphery of the semiconductor chip 10 , as in FIG. 2 which shows the plan view of the substrate 20 .
- a hole 32 surrounded by the anisotropic conductive material 30 is formed between the semiconductor chip 10 and the substrate 20 , and the hole 32 opens into the through-hole 24 .
- the size of the space that opens into the through-hole 24 can be of nearly any size. For example, in case where the hole 32 is larger than the through-hole 24 , moisture (for example, the moisture in the anisotropic conductive material 30 ) can be more surely removed from the semiconductor device when the semiconductor device is treated at high temperatures.
- the method of manufacturing the semiconductor device of this modification includes forming a recess 52 in the anisotropic conductive material 50 having the same structure as discussed above.
- the recess 52 opens into the through-hole 24 .
- the anisotropic conductive material 50 is formed to cover the entire surface of the semiconductor chip 10 , but it does not cover the through-hole 24 and areas of the substrate 20 around the through-hole 24 .
- the anisotropic conductive material 50 is so disposed that it is recessed at and around the through-hole 24 . In this strucure, the anisotropic conductive material 50 can more easily extend inside the region in which the semiconductor chip 10 is mounted on the substrate 20 .
Abstract
A method of manufacturing a semiconductor device, including a first step of placing a resin between one surface of a semiconductor chip, having a plurality of electrodes formed thereon, and a substrate having a wiring pattern formed thereon and defining at least one through-hole in a region in which the semiconductor chip is to be mounted on the substrate, to form a space therebetween that opens into the through-hole, and a second step of pressing either one of the semiconductor chip and the substrate against the other to thereby bond the semiconductor chip to the substrate.
Description
- This is a Divisional of application Ser. No. 09/794,666 filed Feb. 28, 2001. The entire disclosure of the prior application is hereby incorporated by reference herein in its entirety.
- 1. Field of Invention
- The present invention relates to a semiconductor device and a method of manufacturing it, and to a circuit board and electronic instrument incorporating the semiconductor device.
- 2. Description of Related Art
- One known type of CSP (chip scale/size package) semiconductor device, is a face-down bonding (flip chip bonding) structure with semiconductor chips on a substrate. For example, it is known to fabricate a semiconductor device by providing an anisotropic conductive material on the entire surface of a substrate on which semiconductor chips are to be mounted, followed by mounting semiconductor chips thereon.
- However, the anisotropic conductive material provided on the entire surface of the substrate, on which semiconductor chips are to be mounted, extends around the semiconductor chips mounted on the substrate due to the stress applied thereto when the semiconductor chips are mounted on the substrate, and will often form bubbles around the edges of the mounted semiconductor chips. In addition, since the contact area between the two is large, bubbles may also be formed somewhere therein. These bubbles often reduce the reliability of the semiconductor device.
- The invention solves the above problems, and its object is to provide a highly reliable semiconductor device and a method of manufacturing it, and also a circuit board and electronic instrument incorporating the semiconductor device.
- A method of manufacturing a semiconductor device in accordance with the invention includes:
-
- a first step of placing a resin between one surface of a semiconductor chip, having a plurality of electrodes formed thereon, and a substrate having a wiring pattern formed thereon and having at least one through-hole in a region in which the semiconductor chip is to be mounted on the substrate, to form a space therebetween that opens into the through-hole, and
- a second step of pressing at least one of the semiconductor chip and the substrate against the other to thereby bond the semiconductor chip to the substrate.
- A semiconductor device in accordance with the invention includes:
-
- a semiconductor chip having a plurality of electrodes,
- a substrate having a wiring pattern formed thereon, with the semiconductor chip being face-down bonded thereto, and having at least one through-hole in a region in which the semiconductor chip is mounted on the substrate, and
- a resin placed at least between the semiconductor chip and the substrate, the resin being placed therebetween to form a space that opens into the through-hole.
-
FIG. 1 (A) andFIG. 1 (B) are views illustrating a first embodiment of the semiconductor device, and a method of manufacturing it. -
FIG. 2 is a plan view of the semiconductor device of the first embodiment. -
FIG. 3 (A) andFIG. 3 (B) are views illustrating a modification of the first embodiment of the semiconductor device, and a method of manufacturing it. -
FIG. 4 (A) andFIG. 4 (B) are views illustrating a second embodiment of the semiconductor device, and a method of manufacturing it. -
FIG. 5 is a plan view of a third embodiment of the semiconductor device. -
FIG. 6 is a view showing a circuit board on which is mounted a semiconductor device fabricated according to the invention. -
FIG. 7 is a view showing an electronic instrument having a semiconductor device fabricated according to the invention. -
FIG. 8 is a view showing an electronic instrument having a semiconductor device fabricated according to the invention. - A method of manufacturing a semiconductor device in accordance with a first characteristic of the invention includes;
-
- a first step of placing a resin between one surface of a semiconductor chip, having a plurality of electrodes formed thereon, and a substrate having a wiring pattern formed thereon and having at least one through-hole in a region in which the semiconductor chip is to be mounted on the substrate, to form a space therebetween that opens into the through-hole, and
- a second step of pressing at least one of the semiconductor chip and the substrate against the other to thereby bond the semiconductor chip to the substrate.
- According to this structure, the resin is made to extend inside the region in which the semiconductor chip is to be mounted on the substrate, and the amount of the resin that may extend outside the region can be reduced. Accordingly, this structure obviates bubbles that may be formed by the resin extending outside the region to engulf the edge of the semiconductor chip. In addition, since the contact area between the semiconductor chip and the resin is small, few bubbles are formed between the two. Even when some bubbles are formed, they may be removed through the through-hole of the substrate. Accordingly, highly reliable semiconductor devices can be manufactured.
- Embodiments of the invention are mentioned below.
- (1) In the method of manufacturing a semiconductor device in accordance with the first characteristic of the above invention, the resin is placed on the substrate in the first step to form a recessed or holed space thereon that opens into the through-hole.
- According to this structure, the resin forms a recess or a hole that opens into the through-hole, and it is made to extend inside the region in which the semiconductor chip is to be mounted on the substrate. The resin flow toward the recess or the hole can be promoted by removing air through the through-hole that opens into the recess or the hole.
- (2) In the method of manufacturing a semiconductor device in accordance with the first characteristic of the above invention, as the electrodes are formed along the two opposite sides of the semiconductor chip, and
-
- in the first step, the resin is placed along the two sides.
- In this structure, the resin is placed along the two opposite sides of the semiconductor chip along which the electrodes are formed. Accordingly, it is easy to place a smaller amount of the resin in the intended region.
- (3) In the method of manufacturing a semiconductor device in accordance with the first characteristic of the above invention, the electrodes are formed in the peripheral area of the semiconductor chip, and
-
- in the first step, the resin is placed in the site corresponding to the region that is inside the region of the semiconductor chip in which the electrodes are formed.
- In this structure, the range of the resin to extend outside can be reduced. Accordingly, for example, the resin can be kept within the range of the region in which the semiconductor chip is to be mounted on the substrate. Therefore, since the resin does not engulf the edge of the semiconductor chip, this structure is more effective for preventing the formation of bubbles around the edge of the semiconductor chip.
- (4) In the method of manufacturing a semiconductor device in accordance with the first characteristic of the above invention, the resin is placed within a range so as not to overstep the region in which the semiconductor chip is to be mounted on the substrate in the second step.
- In this structure, the resin is placed within a range not overstepping the region in which the semiconductor chip is to be mounted on the substrate. Specifically, since the resin does not engulf the edge of the semiconductor chip, this structure is more effective for preventing the formation of bubbles around the edge of the semiconductor chip.
- (5) In the method of manufacturing a semiconductor device in accordance with the first characteristic constitution of the above invention, the resin contains conductive particles, and
-
- in the second step, the conductive particles are made to be between the electrodes and the wiring pattern. In this case, the resin may be an anisotropic conductive film.
- According to this structure, the electrodes can be electrically connected with the wiring pattern.
- (6) The invention is also intended to cover a semiconductor device manufactured according to any of the above-mentioned semiconductor device-manufacturing methods.
- (7) A semiconductor device in accordance with the invention includes:
-
- a semiconductor chip having a plurality of electrodes,
- a substrate having a wiring pattern formed thereon, with the semiconductor chip being face-down bonded thereto, and having at least one through-hole in a region in which the semiconductor chip is mounted on the substrate, and
- a resin placed at least between the semiconductor chip and the substrate, the resin being placed therebetween to form a space that opens into the through-hole.
- In this structure, the resin is made to extend in the space that opens into the through-hole of the substrate, and the amount of the resin that may extend outside the region in which the semiconductor chip is mounted on the substrate can be reduced. Accordingly, this structure obviates bubbles that may be formed by the resin extending outside the region to engulf the edge of the semiconductor chip. In addition, since the contact area between the semiconductor chip and the resin is small, few bubbles are formed between the two. Even when some bubbles are formed, they may be removed through the through-hole of the substrate. Moreover, in the subsequent packaging step, moisture may be removed from the semiconductor device through the space surrounded by the resin to open into the through-hole of the substrate. Accordingly, highly reliable semiconductor devices can be provided.
- (8) In the above semiconductor device (7), the space is larger than the through-hole.
- An advantage of this structure is that, in the subsequent packaging step, moisture can be removed more readily from the semiconductor device. Specifically, since the space surrounded by the resin is larger than the through-hole of the substrate, moisture can be removed more surely, for example, from the resin.
- (9) In the above semiconductor device (7), the resin is placed so as not to overstep the range of the region in which the semiconductor chip is mounted on the substrate.
- In this structure, the resin is placed so as not to overstep the range of the region in which the semiconductor chip is mounted on the substrate. Specifically, since the resin does not engulf the edge of the semiconductor chip, this structure is more effective for preventing the formation of bubbles around the edge of the semiconductor chip.
- (10) In the above semiconductor device (7), the resin contains conductive particles, and
-
- the conductive particles are placed between the electrodes and the wiring pattern.
- In this case, the resin may be an anisotropic conductive film.
- In this structure, the electrodes can be electrically connected with the wiring pattern.
- (11) The invention is also intended to cover a circuit board having thereon, any of the above semiconductor devices (7) to (10).
- (12) The invention is also intended to cover an electronic instrument having therein any of the above semiconductor devices (7) to (10).
- Some preferred embodiments of the invention are described hereinunder with reference to the drawings attached hereto, which, however, are not intended to restrict the scope of the invention.
- (First Embodiment)
-
FIG. 1 (A) throughFIG. 2 are views illustrating the semiconductor device of this embodiment and a method of manufacturing it. Precisely,FIG. 1 (A) is a view illustrating a method of manufacturing the semiconductor device of this embodiment; andFIG. 1 (B) is a view showing the semiconductor device manufactured according to the method.FIG. 2 is a plan view of the semiconductor device ofFIG. 1 (B). The semiconductor device of this embodiment includes asemiconductor chip 10, asubstrate 20, and a resin. The structure of the semiconductor device of this embodiment is described below. - As shown in
FIG. 1 (B), thesemiconductor chip 10 has a plurality of electrodes (or pads) 12 made of, for example, aluminum. The plurality ofelectrodes 12 may be aligned in a peripheral area of thesemiconductor chip 10, or in a center area of thesemiconductor chip 10. When thesemiconductor chip 10 has a rectangular face, theelectrodes 12 may be aligned along parallel two sides of therectangular semiconductor chip 10, or may be aligned along the four sides thereof. An insulating film (now shown) is formed on thesemiconductor chip 10 so as not to cover at least a part of the surface of eachelectrode 12. The insulating film may be made of, for example, SiO2, SiN, polyimide resin. Optionally, bumps (not shown) of solder balls, gold wire balls, gold plates or the like may be formed on theelectrodes 12. In this case, a bump metal diffusion preventive layer of nickel, chromium, titanium or the like may be disposed between theelectrode 12 and the bump. - As shown in
FIG. 1 (B), thesubstrate 20 may be made of any material of organic or inorganic substances, or may have an organic/inorganic composite structure. One example of thesubstrate 20 made of an organic material is a flexible substrate of polyimide resin. Ceramic substrates and glass substrates are examples of thesubstrate 20 made of an inorganic material. Glass-epoxy substrates are examples of thesubstrate 20 having an organic/inorganic composite structure. For thesubstrate 20, also employable are multi-layered substrates and built-up substrates. - The
wiring pattern 22 is formed on one or both surfaces of thesubstrate 20. In many cases, thewiring pattern 22 has a multi-layered structure. For example, any of copper (Cu), chromium (Cr), titanium (Ti), nickel (Ni) and titanium-tungsten (Ti—W) may be layered to form thewiring pattern 22. Thewiring pattern 22 may be formed through photolithography, sputtering or plating. A part of the wiring pattern may form a land (not shown) of which the area is larger than the wiring area. The land ensures electric connection in the device, and is often formed to act as an electric contact with theelectrodes 12 of thesemiconductor chip 10 or withexternal terminals 40. - As shown in
FIG. 1 (B) andFIG. 2 , thesubstrate 20 is worked to have at least one through-hole (that is, one or more through-holes) 24 in the region in which thesemiconductor chip 10 is mounted thereon. The through-hole 24 opens at both surfaces of thesubstrate 20. The through-hole 24 may be formed substantially at the center of the region in which thesemiconductor chip 10 is mounted on thesubstrate 20. The shape and the size of the through-hole 24 are not specifically defined, and may be such that air can be removed through it. The through-hole 24 can be formed, for example, by punching or etching the substrate. - The
substrate 20 may be worked to have via-holes 26 for external connection, in addition to the through-hole 24. Through the via-holes 26, both surfaces of thesubstrate 20 can be electrically connected with each other. In the case where thesubstrate 20 has the via-holes 26 formed therethrough, a part of thewiring pattern 22 extends over the via-holes 26. The part of thewiring pattern 22 that extends thereover may be a land (not shown). Irrespective of the profile of thewiring pattern 22 formed on thesubstrate 20, the via-holes 26, if any, ensure electric connection with thewiring pattern 22 on both sides of thesubstrate 20. - As shown in
FIG. 1 (B), thesemiconductor chip 10 is face-down bonded to thesubstrate 20. In this case, the mode of electric connection between theelectrodes 12 and thewiring pattern 22 includes bonding of the two with conductive resin paste, or metallic bonding with Au—Au, Au—Sn, solder or the like, or bonding through contraction of insulating resin, any of which is employable herein. For example, as shown inFIG. 1 (B), thesemiconductor chip 10 may be face-down bonded to thesubstrate 20 with an anisotropicconductive material 30 containing conductive particles. As the case may be, the two may be face-down bonded to each other with bumps (not shown) disposed on theelectrodes 12 of thesemiconductor chip 10. The bumps may be formed according to a ball-bumping method in which a bonding wire is used, or an electroplating method, an electroless plating method, a paste printing method, a ball-mounting method, or a combination of such methods. The semiconductor device of this embodiment may have a stacked structure such that a plurality ofsemiconductor chips 10 are layered on thesubstrate 20. - As shown in
FIG. 1 (B), a resin is placed between thesemiconductor chip 10 and thesubstrate 20. The resin may contain conductive particles, like the anisotropicconductive material 30. Precisely, the anisotropicconductive material 30 contains conductive particles (conductive filler) dispersed in an adhesive (binder). The conductive particles in the anisotropicconductive material 30 are placed between theelectrodes 12 and thewiring pattern 22. Accordingly, the two are electrically connected with each other. Apart from this, the resin may be an under-filler. The under-filler may have the function of relaxing the stress in the semiconductor device. This may protect the electric connection between theelectrodes 12 and thewiring pattern 22. - As shown in
FIG. 1 (B) andFIG. 2 , the anisotropicconductive material 30 is placed to form a space that opens into the through-hole 24. In this embodiment, the anisotropicconductive material 30 is disposed to cover the periphery of the region in which thesemiconductor chip 10 is mounted, thereby forming a frame structure wherein the outer periphery is nearly analogous to the periphery of thesemiconductor chip 10, as inFIG. 2 which shows the plan view of thesubstrate 20. In other words, ahole 32 surrounded by the anisotropicconductive material 30 is formed between thesemiconductor chip 10 and thesubstrate 20, and thehole 32 opens into the through-hole 24. The size of the space that opens into the through-hole 24 can be of nearly any size. For example, in case where thehole 32 is larger than the through-hole 24, moisture (for example, the moisture in the anisotropic conductive material 30) can be more surely removed from the semiconductor device when the semiconductor device is treated at high temperatures. - A plurality of
external terminals 40 may be disposed to be in contact with thewiring pattern 22. For example,external terminals 40 may be disposed to be in contact with thewiring pattern 22 through the via-holes 26 formed through thesubstrate 20, as shown inFIG. 1 (B). Precisely, theexternal terminals 40 are connected with a part of the wiring pattern 22 (for example, with the land thereof) exposed outside through the via-holes 26, and theseexternal terminals 40 protrude from the surface of thesubstrate 20 opposite to the surface thereof that faces thesemiconductor chip 10. Theexternal terminals 40 may be made of solder. For example, solder, which becomes solder balls, is filled into each via-hole 26 to form a solder ball-integrated conductive member fitted in each via-hole 26. Theexternal terminals 40 do not have to be formed using solder, and instead theexternal terminals 40 may be made of any other metal or conductive resin. Theexternal terminals 40 can be formed by any of FAN-IN, FAN-OUT or FAN-IN/OUT modes, for example, as shown inFIG. 1 (B). - The
external terminals 40 do not have to be intentionally formed in the manner described above, and solder cream can be applied to the mother board, for mounting the device thereon, to form external terminals. In this case, the solder cream can finally form external terminals due to the surface tension of its melt. The semiconductor device of this type is a land-grid-array device having a land that forms external terminals. If desired, a land may be formed on the surface of thesubstrate 20 opposite to the surface thereof having thewiring pattern 22 thereon and facing thesemiconductor chip 10, and the land may be electrically connected with thewiring pattern 22 via the via-holes 26. Also if desired, the through-hole 26 may be filled with a conductive material, and its surface may serve as a land. - The
substrate 20 may be partly extended for external connection at the extended part thereof. A part of thesubstrate 20 may be a lead for a connector, or a connector may be mounted on thesubstrate 20, or thewiring pattern 22 formed on thesubstrate 20 may be directly connected with other electronic instruments. - The method of manufacturing the semiconductor device of this embodiment is described below.
- (First Step)
- As shown in
FIG. 1 (A), an anisotropicconductive material 30 is placed between thesemiconductor chip 10 and thesubstrate 20. The anisotropicconductive material 30 may be placed on at least thesemiconductor chip 10 or thesubstrate 20. The anisotropicconductive material 30 is disposed on any of the two in such a manner that it forms a space that opens into the through-hole 24 when thesemiconductor chip 10 is combined with thesubstrate 20. The anisotropicconductive material 30 may be either an anisotropic conductive film previously formed to be a sheet, or a liquid-type, anisotropic conductive paste. - In this embodiment, the anisotropic
conductive material 30 is disposed to cover the periphery of the region in which thesemiconductor chip 10 is to be mounted, thereby forming a frame structure of which the outer periphery is nearly analogous to the periphery of thesemiconductor chip 10, as in the plan view of thesubstrate 20. In this case, the anisotropicconductive material 30 may to a certain degree overstep the region of thesubstrate 20 in which thesemiconductor chip 10 is to be mounted on thesubstrate 20. Accordingly, the anisotropicconductive material 30 can be easily and surely disposed in the intended area. - The anisotropic
conductive material 30 forms a space that opens into the through-hole 24. Precisely, space defines ahole 32 surrounded by the anisotropicconductive material 30. The opening of thehole 32 can be of any size, and it may be determined depending on the profile of thehole 32 to be formed by the anisotropicconductive material 30 that extends toward thehole 32 in the subsequent step. - For example, after the anisotropic conductive material 30 (for example, anisotropic conductive paste) has been spread entirely in the region of the
substrate 20 in which thesemiconductor chip 10 is to be mounted on thesubstrate 20, a part of the anisotropicconductive material 30, existing in and around the center of where the through-hole 24 is to be formed, may be removed to form thehole 32. In that manner, for example, when thesubstrate 20 has a plurality of regions for a plurality ofsemiconductor chips 10 to be mounted thereon in the form of a matrix (not shown), the anisotropicconductive material 30 can be easily formed on thesubstrate 20 of that type, and can readily define thehole 32 in every region for eachsemiconductor chip 10. - (Second Step)
- Either one of the
semiconductor chip 10 or thesubstrate 20 can be pressed against the other, whereby theelectrodes 12 are electrically connected with thewiring pattern 22 via the conductive particles in the anisotropicconductive material 30. In this step, thesemiconductor chip 10 may be heated. In case where the anisotropicconductive material 30 includes a thermosetting resin, the anisotropicconductive material 30 is once melted when heated, and then cured. In the case where the anisotropicconductive material 30 is an anisotropic conductive film, it is once fluidized when heated. In the case where resins which are different from the anisotropicconductive material 30 are used, energy may be imparted to the resins in accordance with the curing mechanism of the resins used. - After being fluidized, the anisotropic
conductive material 30 is compressed between thesemiconductor chip 10 and thesubstrate 20, and extends between them. Specifically, the thus-fluidized anisotropicconductive material 30 runs in all directions inside and outside of the region in which thesemiconductor chip 10 is mounted on thesubstrate 20, as in the plan view of thesubstrate 20. In this embodiment, thehole 32 that opens into the through-hole 24 is defined inside the region in which thesemiconductor chip 10 is mounted on the substrate. Therefore, in this step, the anisotropicconductive material 30 can extend not only inside the chip-mounted region but also outside of the chip-mounted region. Specifically, the amount of the anisotropicconductive material 30 extending outside of the chip-mounted region can be reduced, and the anisotropicconductive material 30 extending outside of thesemiconductor chip 10 does not engulf the edge of thechip 10. Accordingly, few bubbles are formed around the edge of thesemiconductor chip 10. In addition, since the contact area between thesemiconductor chip 10 and the anisotropicconductive material 30 is small, few bubbles are formed therein. Even if some bubbles are formed, they can be removed through the through-hole 24 of thesubstrate 20. Accordingly, highly reliable semiconductor devices can be manufactured. - After being further heated, the fluidized anisotropic
conductive material 30 is cured, and thehole 32 surrounded by the thus-curedmaterial 30 is smaller than the original space surrounded by thenon-cured material 30, as shown inFIG. 1 (B). The cross-section of thehole 32 can be of any size. - Though not illustrated herein, the amount of the original anisotropic
conductive material 30, and the original form of thehole 32 surrounded by thematerial 30, can be controlled so that the semiconductor device finally produced does not define thehole 32. In the embodiment not illustrated, thehole 32, that was formed in the first step of the manufacture process as shown inFIG. 1 (A), is filled up with the anisotropicconductive material 30 that extends inside the chip-mounted region in the subsequent step. Even in this case, few bubbles are formed around the edge of thesemiconductor chip 10 for the same reasons as above, and some bubbles, even if formed, can be removed through the through-hole 24. - (Subsequent Steps)
- After the
semiconductor chip 10 has been face-down bonded to the substrate via the anisotropicconductive material 30 or the like,external terminals 40 may be connected with thewiring pattern 22. In order to accomplish this, theexternal terminals 40 are formed under heat (this is a reflow step). Also in this step, the semiconductor device of this embodiment is effective. For example, in the semiconductor device ofFIG. 1 (B), moisture may be removed by heating it in the reflow step. Precisely, moisture in the anisotropicconductive material 30 that forms thehole 32 in the region in which thesemiconductor chip 10 is mounted can be removed through the through-hole 24. In the case where the space of thehole 32 is larger than the size of the through-hole 24, moisture can be more effectively removed from the device through the through-hole 24. - In this embodiment, the resin extends inside the region in which the
semiconductor chip 10 is mounted, and the amount of the resin that may extend outside of the region is reduced. Accordingly, the resin extending outside the chip-mounted region does not engulf the edge of thesemiconductor chip 10 to form bubbles around the edge thereof. Therefore, highly reliable semiconductor devices can be manufactured. -
FIG. 3 (A) andFIG. 3 (B) illustrate a modification of the semiconductor device of this embodiment. In the semiconductor device of this modification, the behavior of the resin (anisotropic conductive material 50) differs from that in the above-mentioned embodiment. The structure of the semiconductor device of this modification and the method of manufacturing it may be substantially the same as those of the above-mentioned embodiment, except for the matters specifically described hereinunder. - As shown in
FIG. 3 (A), the method of manufacturing the semiconductor device of this modification includes forming arecess 52 in the anisotropicconductive material 50 having the same structure as discussed above. In this structure, therecess 52 opens into the through-hole 24. Concretely, the anisotropicconductive material 50 is formed to cover the entire surface of thesemiconductor chip 10, but it does not cover the through-hole 24 and areas of thesubstrate 20 around the through-hole 24. Specifically, the anisotropicconductive material 50 is so disposed that it is recessed at and around the through-hole 24. In this strucure, the anisotropicconductive material 50 can more easily extend inside the region in which thesemiconductor chip 10 is mounted on thesubstrate 20. - The anisotropic
conductive material 50, that extends inside the region in which thesemiconductor chip 10 is mounted, is cured by heating it in the subsequent step, whereby a space smaller than theoriginal recess 52 may be formed, as shown inFIG. 3 (B). Like in the above-mentioned embodiment, therecess 52 shown inFIG. 3 (B) may be filled up, and the anisotropicconductive material 50 does not need to have therecess 52. The semiconductor device of this modification may be manufactured according to the method mentioned above. - (Second Embodiment)
-
FIG. 4 (A) andFIG. 4 (B) illustrate a semiconductor device of this embodiment and a method of manufacturing it. Precisely,FIG. 4 (A) is a view illustrating the method for manufacturing the semiconductor device of this embodiment; andFIG. 4 (B) is a view showing the semiconductor device manufactured according to the method. In the semiconductor device of this embodiment, the behavior of theresin 60 differs from that in the above-mentioned embodiments. Theresin 60 may be an under-filler. The under-filler may have the function of relaxing the stress in the semiconductor device. This function may protect the electric connection between theelectrodes 12 and thewiring pattern 22. The semiconductor device of this embodiment and the method of manufacturing it may be substantially the same as those of the above-mentioned embodiments, except for the matters specifically described hereinunder. - The method of manufacturing the semiconductor device of this embodiment is first described below.
- In this embodiment, the
resin 60 is so disposed that it does not protrude outside of thesemiconductor chip 10 in the plan view when thesemiconductor chip 10 is combined with thesubstrate 20. - For example, the first embodiment will be applied to this embodiment. In this embodiment, the
resin 60 may be placed at a location that is inside the region of thesemiconductor chip 10 in which theelectrodes 12 are formed, in the plan view of thesubstrate 20, thereby forming a frame structure of which the outer periphery is nearly analogous to the periphery of thesemiconductor chip 10. This structure may define ahole 62 that opens into the through-hole 24. - Similarly, on the other hand, the modification of the first embodiment will be applied to this embodiment. In this embodiment, the
resin 60 may be placed at a location that is inside the region of thesemiconductor chip 10 in which theelectrodes 12 are formed, thereby forming a recess (not shown) that opens into the through-hole 24. The method for forming thehole 62 or the recess (not shown) and the effect of thehole 62 or the recess (not shown) are the same as those in the above-mentioned embodiments. - The
resin 60 thus formed extends in all directions inside and outside the region in which thesemiconductor chip 10 is mounted on the substrate, after thesemiconductor chip 10 has been pressed against thesubstrate 20 and the two are heated. In this embodiment, theresin 60 is disposed at a location that is inside the region of thesemiconductor chip 10 in which theelectrodes 12 are formed. In this embodiment, therefore, the range of theresin 60 that may extend outside can be reduced. Accordingly, for example, thefluidized resin 60 is prevented from protruding outside thesemiconductor chip 10 in the plan view of thesubstrate 20, as shown inFIG. 4 (B). Specifically, the range of theresin 60 that extends outside is limited to the range of the region in which thesemiconductor chip 10 is mounted. Accordingly, in this embodiment, theresin 60 is more surely prevented from reaching the edge of thesemiconductor chip 10. Therefore, this structure is more effective for preventing the formation of bubbles around the edge of thesemiconductor chip 10. - The semiconductor device of this embodiment is manufactured according to the method mentioned above. As shown in
FIG. 4 (B), theresin 60 may be provided so as not to protrude outside thesemiconductor chip 10 in its plan view. The mode of electric connection between theelectrodes 12 and thewiring pattern 22 in this embodiment may be metallic bonding or the like, as in the above-mentioned embodiments. - (Third Embodiment)
-
FIG. 5 is a view illustrating a semiconductor device of this embodiment. In the semiconductor device of this embodiment, the structure of the resin (anisotropic conductive material 70) differs from that in the above-mentioned embodiments. The semiconductor device of this embodiment and the method of manufacturing it may be substantially the same as those of the above-mentioned embodiments, except for the matters specifically described hereinunder. - As shown in
FIG. 5 , the semiconductor of this embodiment is effective for the case in which theelectrodes 12 are aligned along the two parallel sides of thesemiconductor chip 10 mounted on the substrate. Specifically, in this embodiment, the anisotropicconductive material 70 acts to ensure the electric connection between theelectrodes 12 and thewiring pattern 22, and it is disposed along the two sides of thesemiconductor chip 10 along which theelectrodes 12 are aligned. - As shown in
FIG. 5 , the anisotropicconductive material 70 in the semiconductor device of this embodiment may be so disposed that it protrudes in some degree outside the region in which thesemiconductor chip 10 is mounted on the substrate, like in the first embodiment. Though not shown, for example, the anisotropicconductive material 70 may be disposed so as not to overstep the region in which thesemiconductor chip 10 is mounted on thesubstrate 20, in the plan view of thesubstrate 20, like in the second embodiment. The method of manufacturing the semiconductor device of this embodiment may be substantially the same as that described hereinabove. - In addition to the advantages of the other embodiments mentioned above, the semiconductor device of this embodiment has another advantage in that a smaller amount of resin may be disposed more easily therein.
-
FIG. 6 shows acircuit board 100 on which thesemiconductor device 1 of any of the above-mentioned embodiments is mounted. Thecircuit board 100, for example, can be an organic substrate, such as a glass-epoxy substrate or the like. A wiring pattern of copper or the like, which provides a desired circuit, is formed on thecircuit board 100. The wiring pattern is mechanically connected with the external terminals of the semiconductor device to ensure electric connection therebetween. - One example of electronic instruments equipped with the semiconductor device of the invention is a notebook-sized
personal computer 200, as shown inFIG. 7 ; and another example thereof is aportable telephone 300, as shown inFIG. 8 .
Claims (6)
1. A semiconductor device, comprising:
a semiconductor chip having a plurality of electrodes;
a substrate having a wiring pattern formed thereon, the substrate having a region on which the semiconductor chip is face-down bonded, the substrate defining at least one through-hole in the region on which the semiconductor chip is face-down bonded; and
a resin disposed at least between the semiconductor chip and the substrate, the resin divided by a space that is in communication with the through-hole into at least two parts.
2. The semiconductor device as claimed in claim 1 , the resin being disposed within the region in which the semiconductor chip is mounted on the substrate.
3. The semiconductor device as claimed in claim 1 , the resin containing conductive particles, the conductive particles being disposed between the electrodes and the wiring pattern.
4. The semiconductor device as claimed in claim 3 , the resin being an anisotropic conductive film.
5. A circuit board incorporating the semiconductor device of claim 1 .
6. An electronic instrument incorporating the semiconductor device of claim 1.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US10/953,518 US20050035465A1 (en) | 2000-03-10 | 2004-09-30 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP2000-066035 | 2000-03-10 | ||
JP2000066035A JP3654116B2 (en) | 2000-03-10 | 2000-03-10 | Semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus |
US09/794,666 US6815830B2 (en) | 2000-03-10 | 2001-02-28 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
US10/953,518 US20050035465A1 (en) | 2000-03-10 | 2004-09-30 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
Related Parent Applications (1)
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US09/794,666 Division US6815830B2 (en) | 2000-03-10 | 2001-02-28 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
Publications (1)
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US20050035465A1 true US20050035465A1 (en) | 2005-02-17 |
Family
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US09/794,666 Expired - Fee Related US6815830B2 (en) | 2000-03-10 | 2001-02-28 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
US10/953,518 Abandoned US20050035465A1 (en) | 2000-03-10 | 2004-09-30 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
Family Applications Before (1)
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US09/794,666 Expired - Fee Related US6815830B2 (en) | 2000-03-10 | 2001-02-28 | Semiconductor device and method of manufacturing the same, circuit board and electronic instrument |
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US (2) | US6815830B2 (en) |
JP (1) | JP3654116B2 (en) |
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US20100230141A1 (en) * | 2009-03-13 | 2010-09-16 | Sumitomo Electric Industries, Ltd. | Structure of connecting printed wiring boards, method of connecting printed wiring boards, and adhesive having anisotropic conductivity |
US20100244234A1 (en) * | 2009-03-30 | 2010-09-30 | Elpida Memory, Inc. | Semiconductor device and method of manufacturing same |
US20100252923A1 (en) * | 2009-04-07 | 2010-10-07 | Elpida Memory, Inc. | Semiconductor device and method of manufacturing same |
US20110031603A1 (en) * | 2009-08-10 | 2011-02-10 | Globalfoundries Inc. | Semiconductor devices having stress relief layers and methods for fabricating the same |
CN103531548A (en) * | 2012-06-29 | 2014-01-22 | 飞思卡尔半导体公司 | Semiconductor package structure having an air gap and method for forming |
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JP3876953B2 (en) * | 1998-03-27 | 2007-02-07 | セイコーエプソン株式会社 | Semiconductor device and manufacturing method thereof, circuit board, and electronic apparatus |
JP2002198395A (en) * | 2000-12-26 | 2002-07-12 | Seiko Epson Corp | Semiconductor device, its manufacturing method, circuit board, and electronic appliance |
US7154206B2 (en) * | 2002-07-31 | 2006-12-26 | Kyocera Corporation | Surface acoustic wave device and method for manufacturing same |
US7265994B2 (en) * | 2003-01-31 | 2007-09-04 | Freescale Semiconductor, Inc. | Underfill film for printed wiring assemblies |
US6919625B2 (en) * | 2003-07-10 | 2005-07-19 | General Semiconductor, Inc. | Surface mount multichip devices |
US7019403B2 (en) * | 2003-08-29 | 2006-03-28 | Freescale Semiconductor, Inc. | Adhesive film and tacking pads for printed wiring assemblies |
US7348666B2 (en) * | 2004-06-30 | 2008-03-25 | Endwave Corporation | Chip-to-chip trench circuit structure |
WO2006114829A1 (en) * | 2005-04-06 | 2006-11-02 | Murata Manufacturing Co., Ltd. | Surface wave sensor device |
JP2008192984A (en) * | 2007-02-07 | 2008-08-21 | Elpida Memory Inc | Semiconductor device and method of manufacturing the same |
JP4468436B2 (en) * | 2007-12-25 | 2010-05-26 | 富士通メディアデバイス株式会社 | Elastic wave device and manufacturing method thereof |
JP5117270B2 (en) * | 2008-04-25 | 2013-01-16 | シャープ株式会社 | WIRING BOARD, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
CN113594117B (en) * | 2021-07-28 | 2024-04-09 | 联合微电子中心有限责任公司 | Semiconductor device and method for manufacturing the same |
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Also Published As
Publication number | Publication date |
---|---|
JP2001257232A (en) | 2001-09-21 |
US6815830B2 (en) | 2004-11-09 |
JP3654116B2 (en) | 2005-06-02 |
US20010031515A1 (en) | 2001-10-18 |
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